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Part : STD2NB40-1 Supplier : STMicroelectronics Manufacturer : Bristol Electronics Stock : 1,950 Best Price : - Price Each : -
Part : STD2NB80T4 Supplier : STMicroelectronics Manufacturer : ComSIT Stock : 560 Best Price : - Price Each : -
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STD2NB60 Datasheet

Part Manufacturer Description PDF Type
STD2NB60 STMicroelectronics N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET Original
STD2NB60 STMicroelectronics N-CHANNEL MOSFET Original
STD2NB60 Toshiba Power MOSFETs Cross Reference Guide Original
STD2NB60-1 STMicroelectronics N-CHANNEL ENHANCEMENT MODE POWERMESH MOSFET Original
STD2NB60-1 STMicroelectronics N-Channel Enhancement Mode PowerMEST MOSFET Scan
STD2NB60T4 STMicroelectronics N-CHANNEL ENHANCEMENT MODE POWERMESH MOSFET Original
STD2NB60T4 STMicroelectronics N-Channel Enhancement Mode PowerMEST MOSFET Scan

STD2NB60

Catalog Datasheet MFG & Type PDF Document Tags

D2NB60

Abstract: d2nb6 Package Packaging STD2NB60T4 D2NB60 DPAK TAPE & REEL STD2NB60-1 D2NB60 IPAK TUBE REV. 2 April 2004 1/11 STD2NB60/STD2NB60-1 Table 3. Absolute Maximum Ratings Symbol , STD2NB60 STD2NB60-1 N-CHANNEL 600V - 3.3 - 2.6A DPAK/IPAK PowerMESHTM MOSFET Figure 1 , A STD2NB60-1 600 V < 3.6 2.6 A FEATURES SUMMARY TYPICAL RDS(on) = 3.3 , let o od Pr e bs O 2/11 uc STD2NB60/STD2NB60-1 ELECTRICAL CHARACTERISTICS (Tcase
STMicroelectronics
Original
d2nb6 V1522 0037C d2nb STD2NB60/STD2NB60-1

STD2NB60

Abstract: STD2NB60 N - CHANNEL ENHANCEMENT MODE PowerMESHTM MOSFET TYPE V DSS STD2NB60 s s s s , TJMAX 1/9 STD2NB60 THERMAL DATA R t hj-ca se Rthj -amb R thc- si nk Tl Thermal , STD2NB60 ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symb ol Typ . Max. Un it t d(on , Operating Area Thermal Impedance 3/9 STD2NB60 Output Characteristics Transfer Characteristics , Variations 4/9 STD2NB60 Normalized Gate Threshold Voltage vs Temperature Normalized On Resistance
STMicroelectronics
Original
0068772-B

SC06140

Abstract: STD2NB60 ) Id STD2NB60 600 V < 3.6 Q. 2.6 A . TYPICAL RDs(on) =3.3 £2 . EXTREMELY HIGH dv/dt CAPABILITY . , /9 STD2NB60 THERMAL DATA Rthj-case Thermal Resistance Junction-case Max 2.5 °C/W Rthj-amb , MHz VGs = 0 400 57 7 520 77 9 PF PF PF 2/9 STD2NB60 ELECTRICAL CHARACTERISTICS (continued , STD2NB60 Output Characteristics I »(A) 4.0 3.0 2.0 1.0 8V Vgs= 1OV^ /V , Vds(V) 4/9 57 STD2NB60 Normalized Gate Threshold Voltage vs Temperature Normalized On Resistance
-
OCR Scan
SC06140 SC059S0 0068771-E

D2NB60

Abstract: d2nb6 STD2NB60T4 STD2NB60-1 Marking D2NB60 D2NB60 Package DPAK IPAK Packaging TAPE & REEL TUBE REV. 2 April 2004 1/11 STD2NB60/STD2NB60-1 Table 3. Absolute Maximum Ratings Symbol VDS VDGR VGS ID ID IDM (1 , STD2NB60-1 VDSS 600 V 600 V RDS(on) < 3.6 < 3.6 ID 2.6 A 2.6 A STD2NB60 STD2NB60-1 Figure 1 , 2.6 80 Unit A mJ 2/11 STD2NB60/STD2NB60-1 ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless , /STD2NB60-1 Table 11. Source Drain Diode Symbol ISD ISDM (1) VSD (2) trr Qrr IRRAM Parameter Source-drain
STMicroelectronics
Original

2nb60

Abstract: ^7# s = 7 SGS-THOMSON Kl(«iLiM(s)iO(gS STD2NB60 N - CHANNEL ENHANCEMENT MODE PowerMESHTM , n T e m p e ra tu re T, (·) Pulse width limited by sate operating area March 1 998 STD2NB60 , PF 2/9 STD2NB60 ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Sym bol td ( o n tr , 1e r 2 1e r 1 t p (s) 3/9 STD2NB60 Output Characteristics GC75QB0 T ran ster , / / ! / 0 / ! 4 / / A 8 12 16 Qg( nC) 57 STD2NB60 Normalized Gate
-
OCR Scan
2nb60

STD2NB60

Abstract: STD2NB60 N - CHANNEL ENHANCEMENT MODE PowerMESHTM MOSFET TYPE V DSS R DS(on) ID STD2NB60 600 V < 3.6 2.6 A s s s s s TYPICAL RDS(on) = 3.3 EXTREMELY HIGH dv/dt , TJMAX 1/9 STD2NB60 THERMAL DATA R thj-case Rthj-amb R thc-sink Tl o 2.5 100 1.5 , Min. Typ. 1.2 2 400 57 7 Max. Unit S 520 77 9 pF pF pF STD2NB60 , Thermal Impedance 3/9 STD2NB60 Output Characteristics Transfer Characteristics
STMicroelectronics
Original
Abstract: SGS-THOMSON R e !< )[l[L , â'™[K RD $ fflDiE s [ieü i@D(S STD2NB60 N - CHANNEL ENHANCEMENT , < T jm a x 1/8 STD2NB60 THERMAL DATA Rthj-case Rthj-amb R t h c - s i nk Ti T h e rm , _ Q_ C iss Coss P aram eter F o rw a rd T ra n s c o n d u c ta n c e STD2NB60 ELECTRICAL , Thermal Impedance fZ T SGS-THOMSON * 7 # ifflO dm n eM K io 3/8 STD2NB60 Output , ieR uæ ies STD2NB60 Normalized Gate Threshold Voltage vs Temperature Normalized On -
OCR Scan
GC75150 GC75160

fqp60n06

Abstract: SSH6N80 STD12NF06 STD12NF06L STP3NB90FP STP3NB90FP /S AM SU N G STD2NB60 STD2NB60 STP55NF06FP STP5NC60FP STP5NC60FP STP5NC60FP STP60NE06-16 STD2NB60-1 STD2NB60-1 STD12NF06L-1 STP4NB80 STW50NB20 , / SAMSUNG /S AM SU N G STD16NE06L STD2NB60 STD4NB40 STD3NB50 STD4NB25 STY34NB50FD Supplier , ST Nearest Preferred STW8NB100 STP10NB20FP STD2NB60 STP5NC60FP STP6NB50FP STP6NB50FP , STB70NF03L STD1NA60 STD2NB60 STD12NF06L STD19NF06L STD30NF06L Supplier STD2NC60 STP6NC60
STMicroelectronics
Original
fqp60n06 SSH6N80 spb32N03l SMP60N03-10L SSP80N06A IRF540 application STP7NB40 STT3PF30L STD20NE03L STP60NE03L-12 STP60NE03L-10 STP40NF03L

std2n52

Abstract: stp2na60 -1 STD4NB25-1 STD2NA40-1 STD2NA40-1 STD5NB40-1 STD5NB40-1 STD2NA40-1 STD3NB50-1 STD3NB50-1 STD2NB60-1 , -16FP STP5NB60FP STP5NB60FP STP5NB60FP STD2NB60-1 STD2NB60-1 STD12NE06L-1 (*) = package option available upon , STD2NB60-1 STD3NB30 STD5NB20-1 STD9N10-1 STN3NE06 STN2N10 STN3NE06 STN3NE06 STN4NE03L STP11NB40 , STW5NA90 STW20NB50 STD2NB60 STW9NA80 STP5NB60FP STP6NB50FP STP6NB50FP STP9NB50FP STP9NB50FP , STD5NB40 STD4NB40 STD16NE06 STD3NB50 STD3NB50 STD2NA50 STD2NB60 IRF520FI IRF520FI IRF530FI
STMicroelectronics
Original
STU16NB50I YTA630 STP19NB20 std2n52 stp2na60 buz102 equivalent rfp60n06 BUZ91 equivalent replacement for IRL2203N 2SK1119 2SK1120 2SK1151 2SK1152 2SK1153 2SK1154

IRF540 complementary

Abstract: IRFZ44N complementary -1 STD5NB40-1 STD5NB40-1 STD2NA40-1 STD3NB50-1* STD3NB50-1* STD2NB60-1 STP16NE06 STP20NE06 STP20NE06FP , STD2NA50-1 STD2N50-1 STD1NB50S-1 STD1NB50-1 STD1NA60-1 STD2NB60 STD2NB60-1 STD2NA60 STU16NB50I , STP5NB60FP STP5NB60 STP3NB60FP STP3NB60FP STD2NB60 STW8NB80 STH8NA80FI STW6NB80 STW8NB90 STW8NB90 , STD4NB25 STD4NB25 STD2NA40 STD5NB40 STD4NB40 STD16NE06 STD3NB50 STD2NA50 STD2NB60 STD9N10 , -1 STD1NA60-1 STD2NB60 STD2NB60 STD2NB60 STU16NB50I STE250N06 STE250N06 STE250N06 STE180N10 STE180N10
STMicroelectronics
Original
STP3N60FI IRF540 complementary IRFZ44N complementary TOSHIBA IRFZ44A datasheet ste38na50 IRF630 complementary IRF3205 IR RFP6N50 RFD16N03LSM RFP15N05L RFP50N05 RFP15N05 RFP50N05L

fqp60n06

Abstract: spb32N03l STD12NF06 STD12NF06L STP3NB90FP STP3NB90FP /S AM SU N G STD2NB60 STD2NB60 STP55NF06FP STP5NC60FP STP5NC60FP STP5NC60FP STP60NE06-16 STD2NB60-1 STD2NB60-1 STD12NF06L-1 STP4NB80 STW50NB20 , / SAMSUNG /S AM SU N G STD16NE06L STD2NB60 STD4NB40 STD3NB50 STD4NB25 STY34NB50FD Supplier , ST Nearest Preferred STW8NB100 STP10NB20FP STD2NB60 STP5NC60FP STP6NB50FP STP6NB50FP , STB70NF03L STD1NA60 STD2NB60 STD12NF06L STD19NF06L STD30NF06L Supplier STD2NC60 STP6NC60
STMicroelectronics
Original
FQP50N10 STP55NF06 AND ITS EQUIVALENT FSD6680 HGTG*N60A4D SFP70N03 irf630 irf640 STP80NE03L-06 STS4DPF30L STB55NF03L STW18NB40 STS8NFS30L STS12NF30L

SSH6N80

Abstract: rfp60n06 STD20NE06 STD25NE03L STD2N50-1 STD2NB40-1 STD2NB50-1 STD2NB52-1 STD2NB60 STD2NB60-1 STD30NE06 , STP45NE06LFP STP5NB80FP STP5NB90FP STP55NE06FP STP5NB60FP STP5NB60FP STP5NB60FP STP60NE06-16 STD2NB60-1 STD2NB60-1 STD12NE06L-1 STP4NB80 BUZ11 BUZ71 BUZ71A BUZ72A Si4410DY STS6DNF30L STP80NF55 , -1 STD3NB50-1 STD2NB60-1 STP16NE06 STP20NE06 STP20NE06FP STP20NE06 STP20NE06 STP30NE06 STP30NE06 , -16 STP6NB50 STP5NB60 STP5NB80 STP5NB90 STP7NB60 STP7NB60 STP7NB80 STP80NE06-10 STD2NB60 STD2NB60
STMicroelectronics
Original
2SK2717 BUK417-500AE BUZ91A STMicroelectronics BUZ22 IXFH13N50 BUZ10 BUZ11A BUZ80A IRF520 IRF530 IRF540

ste30na50

Abstract: STP3N60FI STD1NB52-1 1.4 3.60 8.00 STD2NB60 STD1NA60-1 2.0 1.6 800 6.50 20.0 STD2NB80
STMicroelectronics
Original
STN3NE06L STP15N25 STP4NB90 ste30na50 STE45N50 STHV82 ste24n90 stk2n50 STB55N06 STN4NE03 STN2NE10L STN1N20 STN1NB80 STN3N06

AND8078

Abstract: NCP1052b C6 22 mF Q1 R4 C5 220 pF 1 kV STD2NB60 ­ 1W Figure 1. Non­Isolated Universal , example utilizes a ST­Micro STD2NB60E, which has a VDS rating of 600 V, ID = 2.2 A with an rDSon of 3.6 , STD2NB60 N­Channel MOSFET, 600 V/3.6 W STMicroelectronics I­PAK Q2 2N3904A General
ON Semiconductor
Original
AND8078 NCP1052b q2n3904 NCP1200P60 Transistor Q2N3904 D1N5242 AND8078/D 1N5924B

STP3N60FI

Abstract: IRF540 complementary -1© STD2NB60 STD1NB60-1© STD2NB80-1 STD1NB80-1 60 100 200 250 300 400 500 520 600 800
STMicroelectronics
Original
STP3020L STP4NB90FP STP6NA80FP IRF640 complementary STD1NB60 IRF730 complementary STP53N06 STP80NF03L-04 STP3015L STP40NE03L-20 STP30NE03L STP22NE03L

irf840 power supply

Abstract: STP3020L /1 STD3NB50 STD2NB50-1 STD1NB50-1 STD1NB50S-1 STD5NM60 STD3NC60 STD2NC60 STD2NB60
STMicroelectronics
Original
STP50NF03L STP80NF55-08 STP38NF06L STP22NE10L STP7NB80FP STP6NB90FP irf840 power supply IRF740 STP3NC90Z STP12PF06 STP90NF03L STP70NF3LL STP70NF03L STP60NF03L

std2n52

Abstract: stp3n60 STP4NA60 STP4NA60FI MTP3N60 STP2N60 STD2NB60 STP3NB60 STP3NB60FP STD2NA60 STP3NA60 STP3NA60FI
STMicroelectronics
Original
STB80NE03L-06 stp3n60 STD12NE06 FTP5021-0 TO220 TO-220 std3na50-1 220TM MAX220TM 218TM MAX247TM STB60NE03L-10

MTP6N60E equivalent

Abstract: buz91a equivalent STB7NB60 STB9NB60-1 STD1NA60-1 STD2NB60 STE40NA60 600 V 600 V 600 V 600 V 600 V 600 V 600 V
Infineon Technologies
Original
MTW7N80E MTP6N60E equivalent buz91a equivalent buz90 equivalent IRFBE30 equivalent IRFB11N50A equivalent irfp460a equivalent IRF820 IRF820A IRF820AS IRF820S IRF830A IRF830AS

BTA12 600V

Abstract: scr 600v 12a TO-220 STP5NB60/FP IRFBC30 STP4NC60/FP STD3NC60/-1 STD2NB60/-1 STD2NC60/-1 STP3NB60/FP STP3NC60/FP
STMicroelectronics
Original
BTA12 600V scr 600v 12a TO-220 triac 600v. 1a. to 92 diac 30v triac 1200V triac 10A STBV68 STBV45 STBV42 STBV32 STX13003 ST13003
Abstract: : STD1NB60, STD2NB60, STD3NB60. - Etcâ'¦ Notes: - Due to the rapid evolution of MOSFET technologies ASIC Advantage
Original
IPS102 IPS201 1290-B AADS00002/AA605M
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