NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Part | Manufacturer | Description | Type | Ordering |
| STB30NE06L | STMicroelectronics | N-CHANNEL 60V - 0.35 ? - 30A D2PAK STRIPFET POW |
6 pages, |
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| STB30NE06L | STMicroelectronics | N-CHANNEL 60V - 0.35 ? - 30A D2PAK STRIPFET POWER MOSFET |
6 pages, |
Original | |
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| STB30NE06L | STMicroelectronics | N - CHANNEL 60V - 0.35 ? - 30A - D 2 PAK STripFET POWER MOSFET |
6 pages, |
Original | |
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| Catalog Datasheet Results | Type | Document Tags |
| Abstract: STB30NE06L N-CHANNEL 60V - 0.035 - 30A D 2PAK STripFETTM POWER MOSFET VDSS STB30NE06L , November 2000 1/6 STB30NE06L THERMAL DATA Rthj-case Thermal Resistance Junction-case , ) Typ. Max. Unit STB30NE06L ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol td , 3/6 STB30NE06L Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive , Switching And Diode Recovery Times let o bs O 4/6 ro P s) t( STB30NE06L D2PAK ... | Original |
6 pages, |
STB30NE06L STB30NE06L abstract |
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| Abstract: STB30NE06L ® N - CHANNEL 60V - 0.35 - 30A - D2PAK STripFETTM POWER MOSFET PRELIMINARY DATA TYPE V DSS STB30NE06L s s s s s R DS(on) ID 60 V < 0.05 30 A TYPICAL , STB30NE06L THERMAL DATA R thj -case Rt hj-amb R thc-sink Tl Thermal Resistance Junction-case Max , 195 58 pF pF pF STB30NE06L ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbo l , cycle 1.5 % (·) Pulse width limited by safe operating area 3/6 STB30NE06L Fig. 1: Unclamped ... | Original |
6 pages, |
STB30NE06L STB30NE06L abstract |
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| Abstract: STB30NE06L N-CHANNEL 60V - 0.35 - 30A D2PAK STripFETTM POWER MOSFET VDSS STB30NE06L s s , November 2000 1/6 STB30NE06L THERMAL DATA Max 1.875 °C/W Thermal Resistance , ) Parameter Max. Unit STB30NE06L ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol td , operating area. 3/6 STB30NE06L Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped , STB30NE06L D2PAK MECHANICAL DATA DIM. mm. MIN. TYP inch MAX. MIN. A 4.4 4.6 ... | Original |
6 pages, |
STB30NE06L STB30NE06L abstract |
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| Abstract: STB30NE06L N-CHANNEL 60V - 0.035 - 30A D 2PAK STripFETTM POWER MOSFET VDSS STB30NE06L s , STB30NE06L THERMAL DATA Rthj-case Thermal Resistance Junction-case Rthj-amb Rthc-sink Tj Max , Reverse Transfer Capacitances 58 pF gfs 2/6 (1) Parameter Max. Unit STB30NE06L , 1.5 %. (·)Pulse width limited by safe operating area. 3/6 STB30NE06L Fig. 1: Unclamped , Switching And Diode Recovery Times 4/6 STB30NE06L D2PAK MECHANICAL DATA DIM. mm. MIN. TYP ... | Original |
6 pages, |
STB30NE06L STB30NE06L abstract |
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| ST | N-CHANNEL 60V - 0.35 OHM - 30A - D2PAK STRIPFET POWER MOSFET < > N and Raw Text Format < > N - CHANNEL 60V - 0.35 W - 30A - D 2 PAK STripFET ] POWER limited by safe operating area TYPE V DSS R DS(on) I D < > 60 V < 0.05 W 30 A 1/6 THERMAL DATA R For Inductive Load Switching And Diode Recovery Times < > 4/6 DIM. mm inch MIN. TYP. MAX. MIN G E A C2 D C A1 DETAIL "A" DETAIL "A" A2 P011P6/E P011P6/E P011P6/E P011P6/E TO-263 (D 2 PAK) MECHANICAL DATA < > 5 www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/6525-v1.htm |
STMicroelectronics | 02/04/1999 | 7.08 Kb | HTM | 6525-v1.htm |
| < > N - CHANNEL 60V - 0.35 W - 30A - D 2 PAK STripFET ] POWER MOSFET PRELIMINARY operating area TYPE V DSS R DS(on) I D < > 60 V < 0.05 W 30 A 1/6 THERMAL DATA R thj Capacitance V DS = 25 V f = 1 MHz V GS = 0 1350 195 58 pF pF pF < > 2 .5 % ( w ) Pulse width limited by safe operating area < > 3/6 Fig. 1: Unclamped Inductive Load Recovery Times < > 4/6 DIM. mm inch MIN. TYP. MAX. MIN. TYP. MAX. A 4.4 4.6 0.173 0.181 A1 2 www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/6525.htm |
STMicroelectronics | 20/10/2000 | 9.5 Kb | HTM | 6525.htm |
| ST | N-CHANNEL 60V - 0.35 OHM - 30A - D2PAK STRIPFET POWER MOSFET < > N and Raw Text Format < > N - CHANNEL 60V - 0.35 W - 30A - D 2 PAK STripFET ] POWER limited by safe operating area TYPE V DSS R DS(on) I D < > 60 V < 0.05 W 30 A 1/6 THERMAL DATA R For Inductive Load Switching And Diode Recovery Times < > 4/6 DIM. mm inch MIN. TYP. MAX. MIN G E A C2 D C A1 DETAIL "A" DETAIL "A" A2 P011P6/E P011P6/E P011P6/E P011P6/E TO-263 (D 2 PAK) MECHANICAL DATA < > 5 www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/6525-v2.htm |
STMicroelectronics | 14/06/1999 | 7.05 Kb | HTM | 6525-v2.htm |
| Datasheet N-CHANNEL 60V - 0.35 OHM - 30A D2PAK STRIPFET POWER MOSFET < > 6525 27/11/2000 6 Raw Text Format 1/6 November 2000 < > T j Max. Operating Junction Temperature 175 5C INTERNAL SCHEMATIC DIAGRAM # > 2 - es 58 pF 3/6 < > SWITCHING ON SWITCHING OFF SOURCE DRAIN DIODE (*) Pulsed , Figure 3) 80 0.18 4.5 ns m C A ELECTRICAL CHARACTERISTICS (continued) # > 4 www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/6525-v3.htm |
STMicroelectronics | 30/11/2000 | 8.56 Kb | HTM | 6525-v3.htm |
| ST | N-CHANNEL 60V - 0.35 OHM - 30A - D2PAK STRIPFET POWER MOSFET Datasheet N-CHANNEL 60V - 0.35 OHM - 30A - D2PAK STRIPFET POWER MOSFET < > Document Format Size Document Number Date Update Pages Portable Document Format 6525 17/03/1999 6 Raw Text Format www.datasheetarchive.com/files/stmicroelectronics/books/all/6525.htm |
STMicroelectronics | 25/05/2000 | 2.89 Kb | HTM | 6525.htm |
| ST | N-CHANNEL 60V - 0.35 OHM - 30A - D2PAK STRIPFET POWER MOSFET < > N-CHANNEL 60V - 0.35 OHM - 30A - D2PAK STRIPFET POWER MOSFET Document Number: 6525 Date Update: 17/03/99 Pages: 6 The document is available in the following formats: Portable Document Format and Raw Text Format www.datasheetarchive.com/files/stmicroelectronics/stonline/books/all/6525.htm |
STMicroelectronics | 31/03/1999 | 0.92 Kb | HTM | 6525.htm |
| ST | N-CHANNEL 60V - 0.35 OHM - 30A D2PAK STRIPFET POWER MOSFET Datasheet N-CHANNEL 60V - 0.35 OHM - 30A D2PAK STRIPFET POWER MOSFET < > Document Format Size Document Number Date Update Pages Portable Document Format 6525 27/11/2000 6 Raw Text Format www.datasheetarchive.com/files/stmicroelectronics/stonline/books/all/6525-v1.htm |
STMicroelectronics | 30/11/2000 | 2.71 Kb | HTM | 6525-v1.htm |
| ST | N-CHANNEL 60V - 0.35 OHM - 30A - D2PAK STRIPFET POWER MOSFET < > N-CHANNEL 60V - 0.35 OHM - 30A - D2PAK STRIPFET POWER MOSFET Document Number: 6525 Date Update: 17/03/99 Pages: 6 The document is available in the following formats: Portable Document Format and Raw Text Format www.datasheetarchive.com/files/stmicroelectronics/stonline/books/all/6525-v2.htm |
STMicroelectronics | 14/06/1999 | 0.9 Kb | HTM | 6525-v2.htm |
| .019 OHM - 40A - D2PAK STRIPFET POWER MOSFET | Index | < > - N-CHANNEL 60V - 0.35 OHM - 30A www.datasheetarchive.com/files/stmicroelectronics/stonline/books/pdf/newmenu/07010200.htm |
STMicroelectronics | 07/04/1999 | 7.2 Kb | HTM | 07010200.htm |
| Datasheets < > N-CHANNEL 60V - 0.35 OHM - 30A - D2PAK STRIPFET POWER MOSFET 8 465 www.datasheetarchive.com/files/stmicroelectronics/stonline/pnsearch/static/217.htm |
STMicroelectronics | 31/03/1999 | 15.88 Kb | HTM | 217.htm |
| Fairchild Part | Orderable | Industry Part | Manufacturer | Type | Family | Description |
| FDB20AN06A0 | FDB20AN06A0 Buy | STB30NE06L Buy | STMicroelectronics | Close | Power MOSFET | N-Channel PowerTrench MOSFET 60V, 45A, 20 milliohm |
| FDB20AN06A0 | FDB20AN06A0 Buy | STB30NE06LT4 Buy | STMicroelectronics | Close | Power MOSFET | N-Channel PowerTrench MOSFET 60V, 45A, 20 milliohm |
| FDB3860 | FDB3860 Buy | STB30NE06L Buy | STMicroelectronics | Close | Power MOSFET | 100V N-Channel PowerTrench MOSFET |
| FDB3860 | FDB3860 Buy | STB30NE06LT4 Buy | STMicroelectronics | Close | Power MOSFET | 100V N-Channel PowerTrench MOSFET |
| FQB30N06L | FQB30N06L Buy | STB30NE06L Buy | STMicroelectronics | Close | Power MOSFET | 60V N-Channel Logic level QFET |
| FQB30N06L | FQB30N06L Buy | STB30NE06LT4 Buy | STMicroelectronics | Close | Power MOSFET | 60V N-Channel Logic level QFET |
| FQB33N10 | FQB33N10 Buy | STB30NE06L Buy | STMicroelectronics | Close | Power MOSFET | 100V N-Channel QFET |
| Leshan Radio Company Part | Industry Part |
| lmtb30n06vl Buy | STB30NE06L Buy |