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SSS4N80A Datasheet

Part Manufacturer Description PDF Type
SSS4N80A Fairchild Semiconductor Advanced Power MOSFET Original
SSS4N80A Toshiba Power MOSFETs Cross Reference Guide Original
SSS4N80A Fairchild Semiconductor Advanced Power MOSFET Scan
SSS4N80AS Fairchild Semiconductor Advanced Power Mosfet Original
SSS4N80AS Toshiba Power MOSFETs Cross Reference Guide Original
SSS4N80AS Fairchild Semiconductor Advanced Power MOSFET Scan

SSS4N80A

Catalog Datasheet MFG & Type PDF Document Tags

rc261

Abstract: ax.) @ VD S= 800V SSS4N80A BVdss " 800 V ^ D S (o n ) = 4.0 Q. lD = 2.5 A M Low Rqs(on , /W 259 ELECTRONICS SSS4N80A Symbol Characteristic Min. Typ. Max. Units 800 2.0 - - _ - , Ctwractertetics SSS4N80A Fig 2. Transfer Characteristics & V_ , Gfete-Souixe V b lta g e [V , Voltage Q. , îb ta l Gfete Charge [r C \ 261 ELECTRONICS SSS4N80A Fig 7. Breakdown Voltaga , D u ra tio n io" [s e c ] 262 ELECTRONICS SSS4N80A Fig 12. Gate Chary* Tesi Circuit &
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OCR Scan
rc261 250MA VQ8-30V

SSS4N80A

Abstract: Advanced Power MOSFET SSS4N80A FEATURES â  Avalanche Rugged Technology â  Rugged Gate , -220F I.Gate 2. Drain 3. Source This Material Copyrighted By Its Respective Manufacturer SSS4N80A N-CHANNEL , Manufacturer N-CHANNEL POWER MOSFET SSS4N80A Fig 5. Capacitance vs. Drain-Source Voltage ç = c ss gs , Copyrighted By Its Respective Manufacturer SSS4N80A N-CHANNEL POWER MOSFET Fig 7. Breakdown Voltage vs , Manufacturer SSS4N80A N-CHANNEL POWER MOSFET Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
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OCR Scan
Abstract: (Max.) @ VD S = 800V Low R0S(0n> : 3.400 ft (Typ.) SSS4N80A BVdss = 800 V ^DS(on) = 4 .0 Î2 , Max. 3.13 62.5 Units °c/w ELECTRONICS SSS4N80A Electrical Characteristics Symbol B^oss ABV , Independent of Operating Temperature N-CHANNEL POWER MOSFET SSS4N80A Fig 2. Transfer Characteristics , [rC] SSS4N80A N-CHANNEL POWER MOSFET Fig 8. On-Resistance vs. Temperature Tj , N-CHANNEL POWER MOSFET SSS4N80A Fig 12. Gate Charge Test Circuit & Waveform Charge Resistor -
OCR Scan

SSS4N80A

Abstract: SSS4N80A Advanced Power MOSFET FEATURES BVDSS = 800 V Avalanche Rugged Technology RDS , N-CHANNEL POWER MOSFET SSS4N80A Electrical Characteristics (TC=25 C unless otherwise specified , O N-CHANNEL POWER MOSFET SSS4N80A Fig 1. Output Characteristics [A] V GS 1 10 , ) Drain-Source Breakdown Voltage SSS4N80A @ Notes : 1. V = 0 V GS 3.0 2.5 2.0 1.5 1.0 @ , ] 101 125 150 N-CHANNEL POWER MOSFET SSS4N80A Fig 12. Gate Charge Test Circuit & Waveform
Fairchild Semiconductor
Original

D0405

Abstract: SSS4N80A Advanced Power MOSFET SSS4N80A FEATURES â  Avalanche Rugged Technology â  Rugged Gate , Junction-to-Ambient 62.5 ELECTRONICS 7^4142 D040545 4bT SSS4N80A N-CHANNEL POWER MOSFET Electrical , G04054b 3TS N-CHANNEL POWER MOSFET SSS4N80A Fig 1. Output Characteristics icP io1 vÅ" , Drain-ScurÅ , SSS4N80A Fig 12. Gate Charge Test Circuit & Waveform * Current Regulator * Current Sampling (1G , GQ4 SSS4N80A N-CHANNEL POWER MOSFET Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
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OCR Scan
D0405 0D405S0

irfm014

Abstract: SSP80N06 SSS2N60A SSS4N60AS SSS7N60A SSS10N60A SSS6N70A SSS2N80A SSS3N80A SSS4N80A SSS4N80AS SSS5N80A SSS6N80A
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OCR Scan
IRFU210A irfm014 SSP80N06 SSD2104 IRFI530A IRFU*230A SSR3055A IRFR014A IRFR024A IRFR034A IRFR110A IRFR120A

irf1740

Abstract: IRL244 SSS1N60A SSS2N60A SSS4N60AS SSS7N60A SSS10N60A SSS6N70A SSS2N80A SSS3N80A SSS4N80A SSS4N80AS SSSSN80A
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OCR Scan
IRFU230A irf1740 IRL244 IRF1740A ks 0550 IRL244A IRFZ34A IRFR130A IRFR210A IRFR220A IRFR230A IRFR214A IRFR224A

SSP6N60A

Abstract: IRF650 SSS4N80AS Advanced Power MOSFET FEATURES BVDSS = 800 V Avalanche Rugged Technology RDS , . - 3.13 - 62.5 Units C/W N-CHANNEL POWER MOSFET SSS4N80AS Electrical , Integral reverse pn-diode in the MOSFET 4 O N-CHANNEL POWER MOSFET SSS4N80AS Fig 1 , Gate Charge [nC] 40 50 N-CHANNEL POWER MOSFET SSS4N80AS Fig 12. Gate Charge Test Circuit , N-CHANNEL POWER MOSFET SSS4N80AS Fig 12. Gate Charge Test Circuit & Waveform * Current Regulator
Fairchild Semiconductor
Original
SSP6N60A IRF650 IRF540 mosfet with maximum VDS 12v SSP2N60B SSP4N60A ssr2955 SC70-6 FDG6323L FDG6324L FDG6331L FDC6323L FDC6324L

SSP35n03

Abstract: bc417 Advanced Power MOSFET SSS4N80AS FEATURES â  Avalanche Rugged Technology â  Rugged Gate , 9ja Junction-to-Ambient fiOfi ELECTRONICS 71L.414B 0040551 7b2 SSS4N80AS N-CHANNEL POWER , Operating Temperature 7^4142 0040552 fH N-CHANNEL POWER MOSFET SSS4N80AS Fig 1. Output Characteristics , SSS4N80AS Fig 12. Gate Charge Test Circuit & Waveform Current Sampling (IG) Current Sampling (ID) Resistor , / -VDS(t) Time â  7%4142 DD4G554 471 â  N-CHANNEL POWER MOSFET SSS4N80AS Fig 12. Gate Charge Test
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Original
SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent 5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA

ss8050 d 331

Abstract: tip122 tip127 mosfet audio amp Advanced Power MOSFET SSS4N80AS FEATURES â  Avalanche Rugged Technology â  Rugged Gate Oxide Technology â  Lower Input Capacitance â  Improved Gate Charge â  Extended Safe Operating , Manufacturer SSS4N80AS N-CHANNEL POWER MOSFET Electrical Characteristics (Tc=25°c unless otherwise , Copyrighted By Its Respective Manufacturer N-CHANNEL POWER MOSFET SSS4N80AS Figi. Output Characteristics , Copyrighted By Its Respective Manufacturer SSS4N80AS N-CHANNEL POWER MOSFET Fig 15. Peak Diode Recovery dv
Fairchild Semiconductor
Original
ss8050 d 331 tip122 tip127 mosfet audio amp KSD180 KA1M0880 application note SS8550 D 331 dual cc BAW62 S-112 F-91742

YTA630

Abstract: MTW14P20 SSS4N80AS A d v a n c e d Power MOSFET FEATURES BVDSS Avalanche Rugged Technology Rugged , o rp o ra tio n Units °c/W SSS4N80AS N-CHANNEL POWER M O SFET Electrical , Test Condition © N-CHANNB. POWER MOSFET SSS4N80AS O k ) C )4 1 i O U / i k ) Fig 1 , FAIRCHILD SEM ICONDUCTOR SSS4N80AS N-CHANNEL POWER MOSFET Fig 12. Gate Charge Test Circuit & , EaS - FAIRCHILD SEM ICONDUCTOR 2 ^L^AS2 SSS4N80AS N-CHANNEL POWER MOSFET Fig 12
Toshiba
Original
YTA630 MTW14P20 BSS125 MTAJ30N06HD SMP60N06 replacement SMU10P05 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401

SSS4N80AS

Abstract: BVDSS ax.) @ VO S= 800V Low Ros(on) : 2.450 Q. (Typ.) SSS4N80AS BVdss = 800 V ^DS(on) = 3 -0 Û l0 , /W 265 ELECTRONICS SSS4N80AS Symbol Characteristic Min. Typ. Max. Units 800 - - , ELECTRONICS N-CHANNEL POWER MOSFET Fig 1. Output Characteristics SSS4N80AS VOE , Cfete-Scuroe , ELECTRONICS SSS4N80AS Fig 7. BcMfcdowm Voltog* w . Temperature N-CHANNEL POWER MOSFET Fig I , SSS4N80AS C urrant Sam pling ( I a) R u iito r C urrent Sam pling ( I D) R s is to r Charge Fig
Samsung Electronics
Original
BVDSS

SSS4N80AS

Abstract: SSS4N80AS Advanced Power MOSFET FEATURES BVDSS = 800 V Avalanche Rugged Technology RDS , N-CHANNEL POWER MOSFET SSS4N80AS Electrical Characteristics (TC=25 C unless otherwise specified , N-CHANNEL POWER MOSFET SSS4N80AS Fig 1. Output Characteristics [A] V GS 1 10 Top : 15V , MOSFET SSS4N80AS Fig 12. Gate Charge Test Circuit & Waveform * Current Regulator * 50K¥Ø 12V , ) VDD VDS (t) VDD 10V tp tp Time N-CHANNEL POWER MOSFET SSS4N80AS Fig 12. Gate
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OCR Scan
00405S

SSS4N80AS

Abstract: (M ax.) @ VDS = 800V SSS4N80AS BV0SS = 800 V RoS(on) = 3.0 £2 iD = 2.8 A T0 -2 2 0 F M , Units R 8jc < © cc ELECTRONICS . "C/W SSS4N80AS Electrical Characteristics (T c =25 c , SSS4N80AS V OE , Dcain-Scuroe Voltage (V] VOE , fete-Scurce Maltage [V] Fig 3. On-Resistance , Circuit & Waveform SSS4N80AS R esistor Resistor Fig 13. Resistive Switching Test Circuit & , SSS4N80AS ' DS Current Sam pling (I G) R esistor Current Sam pling (I D) Resistor C harge Fig
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OCR Scan