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SSM6N09FU Datasheet

Part Manufacturer Description PDF Type Ordering
SSM6N09FU Toshiba
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4 pages,
196.83 Kb

Original Buy
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SSM6N09FU Toshiba Small-Signal MOS FETs (Dual); Surface Mount Type: Y; Package: US6; XJE016 JEITA: SC-88; Number of Pins: 6; Internal connection: Independent; V_DS(Q1), max (V): (max 30); V_GSS(Q1), max (V): (max +/-20); I_D Q1, max (mA): (max 400)
ri

5 pages,
143.75 Kb

Original Buy
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SSM6N09FU Toshiba Field Effect Transistor Silicon N Channel MOS Type
ri

4 pages,
199.91 Kb

Original Buy
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SSM6N09FU

Catalog Datasheet Results Type PDF Document Tags
Abstract: SSM6N09FU NMOS SSM6N09FU : mm · · : Ron = 0.7 (max) (@VGS = 10 V , 3 1 2 3 1 2007-11-01 SSM6N09FU (Ta = 25°C) (Q1, Q2 , (on) Vth GS (off) Vth V V (VGS (off) < Vth < VGS (on) ) 2 2007-11-01 SSM6N09FU (Q1 , (°C) 30 50 100 3 300 ID 500 1000 (mA) 2007-11-01 SSM6N09FU (Q1 , SSM6N09FU · · · · "" · · · · ... Original
datasheet

5 pages,
238.98 Kb

SSM6N09FU SSM6N09FU abstract
datasheet frame
Abstract: SSM6N09FU NMOS SSM6N09FU : mm · · : Ron = 0.7 (max) (@VGS = 10 V , 3 1 2 3 1 2007-11-01 SSM6N09FU (Ta = 25°C) (Q1, Q2 , (on) Vth GS (off) Vth V V (VGS (off) < Vth < VGS (on) ) 2 2007-11-01 SSM6N09FU (Q1 , (°C) 30 50 100 3 300 ID 500 1000 (mA) 2007-11-01 SSM6N09FU (Q1 , SSM6N09FU · · · · "" · · · · ... Original
datasheet

5 pages,
238.95 Kb

SSM6N09FU SSM6N09FU abstract
datasheet frame
Abstract: SSM6N09FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N09FU High Speed , direct contact with devices should be made of anti-static materials. 1 2003-02-19 SSM6N09FU , 2003-02-19 SSM6N09FU (Q1, Q2 common) ID ­ VDS RDS (ON) ­ ID 1000 2 Common Source Drain , SSM6N09FU (Q1, Q2 common) Vth ­ Ta IDR ­ VDS 2 1000 (mA) 800 D IDR VDS = 5 V , ) *: Total rating 4 2003-02-19 SSM6N09FU RESTRICTIONS ON PRODUCT USE 000707EAA 000707EAA · TOSHIBA ... Original
datasheet

5 pages,
143.75 Kb

SSM6N09FU SSM6N09FU abstract
datasheet frame
Abstract: SSM6N09FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N09FU High Speed , devices should be made of anti-static materials. 1 2003-02-19 SSM6N09FU Marking Equivalent , 4 V or higher to turn on this product. 2 2003-02-19 SSM6N09FU (Q1, Q2 common) ID ­ VDS , ID (mA) 3 2003-02-19 SSM6N09FU (Q1, Q2 common) Vth ­ Ta 2 1000 Common Source 1.8 IDR , 160 Ambient temperature Ta (°C) *: Total rating 4 2003-02-19 SSM6N09FU RESTRICTIONS ... Original
datasheet

5 pages,
196.53 Kb

SSM6N09FU SSM6N09FU abstract
datasheet frame
Abstract: SSM6N09FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N09FU High Speed , anti-static materials. 1 2007-11-01 SSM6N09FU Marking Equivalent Circuit (top view) 6 Figure 1 , take this into consideration for using the device. 2 2007-11-01 SSM6N09FU (Q1, Q2 common , ID (mA) 3 2007-11-01 SSM6N09FU (Q1, Q2 common) Vth ­ Ta 2 1000 Common Source 1.8 IDR , 160 Ambient temperature Ta (°C) *: Total rating 4 2007-11-01 SSM6N09FU RESTRICTIONS ... Original
datasheet

5 pages,
157.99 Kb

SSM6N09FU SSM6N09FU abstract
datasheet frame
Abstract: SSM6N09FU Preliminary TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N09FU , devices should be made of anti-static materials. 1 2002-01-17 SSM6N09FU Marking Equivalent , this product. 2 2002-01-17 SSM6N09FU (Q1, Q2 common) ID ­ VDS 1000 Common Source 800 10 4 , (mA) 3 2002-01-17 SSM6N09FU (Q1, Q2 common) Vth ­ Ta 2 1000 Common Source 1.8 IDR ­ , 140 160 Ambient temperature Ta (°C) *: Total rating 4 2002-01-17 SSM6N09FU ... Original
datasheet

5 pages,
227.1 Kb

SSM6N09FU SSM6N09FU abstract
datasheet frame
Abstract: SSM6N09FU Preliminary TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N09FU High Speed Switching Applications · Small package · Low Drain-Source ON resistance. : Ron , information contained herein is subject to change without notice. 2001-02-19 1/4 SSM6N09FU Marking , SSM6N09FU (Q1, Q2 common) ID ­ VDS RDS (ON) ­ ID 2 1000 Common Source 10 4 Drain-Source , Drain current 300 ID 500 1000 (mA) 2001-02-19 3/4 SSM6N09FU (Q1, Q2 common ... Original
datasheet

4 pages,
199.91 Kb

SSM6N09FU SSM6N09FU abstract
datasheet frame
Abstract: SSM6N09FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N09FU High Speed , should be made of anti-static materials. 1 2007-11-01 SSM6N09FU Marking Figure 1: 25.4 mm - , 2007-11-01 SSM6N09FU (Q1, Q2 common) ID ­ VDS RDS (ON) ­ ID 1000 2 Common Source Drain , SSM6N09FU (Q1, Q2 common) Vth ­ Ta IDR ­ VDS 1000 2 Drain Reveres current IDR (mA) Vth (V , SSM6N09FU RESTRICTIONS ON PRODUCT USE · Toshiba Corporation, and its subsidiaries and affiliates ... Original
datasheet

5 pages,
133.87 Kb

SSM6N09FU SSM6N09FU abstract
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Abstract: 150C60B SSM5N03FE SSM5N03FE 508 SSM6N05FU SSM6N05FU 700 2SK1829 2SK1829 146 SSM3K01T SSM3K01T 306 SSM5N05FU SSM5N05FU 512 SSM6N09FU , ±20 3000 SSM3K12T SSM3K12T 30 ±20 1500 SSM6K07FU SSM6K07FU 30 ±20 400 SSM6N09FU 30 , SSM6N09FU VDSS (V) Nch - 2 HN1K05FU HN1K05FU VDSS (V) ID (mA) US6 US6 UF6 UF6 ... Original
datasheet

78 pages,
1369.86 Kb

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Abstract: SSM3K03FE SSM3K03FE x2 v SSM6N09FU SSM3K09FU SSM3K09FU x2 v SSM6P09FU SSM6P09FU SSM3J09FU SSM3J09FU x2 v SSM6L09FU SSM6L09FU SSM3K09FU SSM3K09FU+ SSM3J09FU SSM3J09FU HN1K02FU HN1K02FU ... Original
datasheet

2 pages,
31.15 Kb

SSM6J08FU SCS-70 SC-59 SC-59 abstract
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