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Part : SSM6N09FU(TE85L,F) Supplier : Toshiba Manufacturer : Chip1Stop Stock : 6,600 Best Price : $1.41 Price Each : $1.73
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SSM6N09FU Datasheet

Part Manufacturer Description PDF Type
SSM6N09FU Toshiba Original
SSM6N09FU Toshiba Small-Signal MOS FETs (Dual); Surface Mount Type: Y; Package: US6; XJE016 JEITA: SC-88; Number of Pins: 6; Internal connection: Independent; V_DS(Q1), max (V): (max 30); V_GSS(Q1), max (V): (max +/-20); I_D Q1, max (mA): (max 400) Original
SSM6N09FU Toshiba Field Effect Transistor Silicon N Channel MOS Type Original

SSM6N09FU

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: SSM6N09FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N09FU High Speed , anti-static materials. 1 2007-11-01 SSM6N09FU Marking Equivalent Circuit (top view) 6 Figure 1 , this into consideration for using the device. 2 2007-11-01 SSM6N09FU (Q1, Q2 common) ID ­ , ID (mA) 3 2007-11-01 SSM6N09FU (Q1, Q2 common) Vth ­ Ta 2 1000 Common Source 1.8 IDR , 160 Ambient temperature Ta (°C) *: Total rating 4 2007-11-01 SSM6N09FU RESTRICTIONS Toshiba
Original

SSM6N09FU

Abstract: SSM6N09FU NMOS SSM6N09FU : mm · · : Ron = 0.7 (max) (@VGS = 10 V , 3 1 2 3 1 2007-11-01 SSM6N09FU (Ta = 25°C) (Q1, Q2 , (on) Vth GS (off) Vth V V (VGS (off) < Vth < VGS (on) ) 2 2007-11-01 SSM6N09FU (Q1 , (°C) 30 50 100 3 300 ID 500 1000 (mA) 2007-11-01 SSM6N09FU (Q1 , SSM6N09FU · · · · "" · · · ·
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Original
Abstract: SSM6N09FU Preliminary TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N09FU , with devices should be made of anti-static materials. 1 2002-01-17 SSM6N09FU Marking , this product. 2 2002-01-17 SSM6N09FU (Q1, Q2 common) ID ­ VDS 1000 Common Source 800 10 4 , (mA) 3 2002-01-17 SSM6N09FU (Q1, Q2 common) Vth ­ Ta 2 1000 Common Source 1.8 IDR ­ , 140 160 Ambient temperature Ta (°C) *: Total rating 4 2002-01-17 SSM6N09FU Toshiba
Original

SSM6N09FU

Abstract: SSM6N09FU Preliminary TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N09FU High Speed Switching Applications · Small package · Low Drain-Source ON resistance. : Ron , information contained herein is subject to change without notice. 2001-02-19 1/4 SSM6N09FU Marking , . VGS recommended voltage of 4 V or higher to turn on this product. 2001-02-19 2/4 SSM6N09FU , Drain current 300 ID 500 1000 (mA) 2001-02-19 3/4 SSM6N09FU (Q1, Q2 common
Toshiba
Original
000707EAA1
Abstract: SSM6N09FU Preliminary TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N09FU , 2002-01-17 SSM6N09FU Marking Figure 1: 25.4 mm ´ 25.4 mm ´ 1.6 t, Equivalent Circuit Cu Pad , recommended voltage of 4 V or higher to turn on this product. 2 2002-01-17 SSM6N09FU (Q1, Q2 common , ) 30 50 100 Drain current 3 300 ID 500 1000 (mA) 2002-01-17 SSM6N09FU , Ta (°C) *: Total rating 4 2002-01-17 SSM6N09FU RESTRICTIONS ON PRODUCT USE Toshiba
Original
Abstract: SSM6N09FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N09FU High Speed , with devices should be made of anti-static materials. 1 2003-02-19 SSM6N09FU Marking , . VGS recommended voltage of 4 V or higher to turn on this product. 2 2003-02-19 SSM6N09FU , temperature Ta (°C) Drain current ID (mA) 3 2003-02-19 SSM6N09FU (Q1, Q2 common) Vth ­ Ta 2 , 140 160 Ambient temperature Ta (°C) *: Total rating 4 2003-02-19 SSM6N09FU Toshiba
Original
Abstract: SSM6N09FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N09FU High Speed , . Start of commercial production 2001-02 1 2014-03-01 SSM6N09FU Marking Figure 1: 25.4 mm , 2014-03-01 SSM6N09FU (Q1, Q2 common) ID â'" VDS RDS (ON) â'" ID 1000 2 Common Source Drain , ID (mA) 3 2014-03-01 SSM6N09FU (Q1, Q2 common) Vth â'" Ta IDR â'" VDS 1000 2 , 140 160 Ambient temperature Ta (°C) *: Total rating 4 2014-03-01 SSM6N09FU Toshiba
Original

SSM6N09FU

Abstract: SSM6N09FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N09FU High Speed , direct contact with devices should be made of anti-static materials. 1 2003-02-19 SSM6N09FU , 2003-02-19 SSM6N09FU (Q1, Q2 common) ID ­ VDS RDS (ON) ­ ID 1000 2 Common Source Drain , ) 2003-02-19 SSM6N09FU (Q1, Q2 common) Vth ­ Ta IDR ­ VDS 2 1000 (mA) 800 D IDR , temperature Ta (°C) *: Total rating 4 2003-02-19 SSM6N09FU RESTRICTIONS ON PRODUCT USE
Toshiba
Original

SSM6N09FU

Abstract: SSM6N09FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N09FU High Speed , should be made of anti-static materials. 1 2007-11-01 SSM6N09FU Marking Figure 1: 25.4 mm × , 2007-11-01 SSM6N09FU (Q1, Q2 common) ID ­ VDS RDS (ON) ­ ID 1000 2 Common Source Drain , 50 100 300 500 1000 Drain current ID (mA) 3 2007-11-01 SSM6N09FU (Q1, Q2 , 160 Ambient temperature Ta (°C) *: Total rating 4 2007-11-01 SSM6N09FU RESTRICTIONS
Toshiba
Original
Abstract: SSM6N09FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N09FU High Speed , 2007-11-01 SSM6N09FU Marking Figure 1: 25.4 mm × 25.4 mm × 1.6 t, Equivalent Circuit Cu Pad , for using the device. 2 2007-11-01 SSM6N09FU (Q1, Q2 common) ID â'" VDS RDS (ON) â , 300 500 1000 Drain current ID (mA) 3 2007-11-01 SSM6N09FU (Q1, Q2 common) Vth â , SSM6N09FU RESTRICTIONS ON PRODUCT USE â'¢ Toshiba Corporation, and its subsidiaries and affiliates Toshiba
Original

8aa1

Abstract: esm 310 SSM5N03FE 508 SSM6N05FU 700 2SK1829 146 SSM3K01T 306 SSM5N05FU 512 SSM6N09FU , ±20 3000 SSM3K12T 30 ±20 1500 SSM6K07FU 30 ±20 400 SSM6N09FU 30 , SSM6N09FU VDSS (V) Nch × 2 HN1K05FU VDSS (V) ID (mA) US6 US6 UF6 UF6
Toshiba
Original
2SJ148 SSM3J01T SSM3K16TE SSM6K08FU 12341D3AG 8aa1 esm 310 ES6 US6 TU6 fS6 2SK1828 KDA 1.2 2SK982 050106DAA1 SSM3K16FV 2SJ167 SSM3J02F

SCS-70

Abstract: SSM6J08FU SSM3K03FE x2 v SSM6N09FU SSM3K09FU x2 v SSM6P09FU SSM3J09FU x2 v SSM6L09FU SSM3K09FU+ SSM3J09FU HN1K02FU
Toshiba
Original
SCS-70 SSM6J08FU HN1K06FU SC-59 2SK1825 2SK1826 2SJ342 2SJ343

TOSHIBA MG150N2YS40

Abstract: mg75n2ys40 SSM6N05FU 1122 SSM3J02F 706 SSM3K12T 820 SSM5N16FE 984 SSM6N09FU 1126 SSM3J02T , 400 20 200 0.6 ~ 1.1 0.85 1.2 200 2.5 DF SSM6N09FU 400 30 200
Toshiba
Original
TOSHIBA MG150N2YS40 mg75n2ys40 MG15N6ES42 mg150n2ys40 2SK150A toshiba s2530a YTF230 S2543

SSM3K7002

Abstract: ESM 310 2.5 30 ±20 400 - - - SSM6N09FU SSM3K09FU × 2 1.1 1.8 0.8 1.2 4
Toshiba
Original
SSM3K7002 SSM3J16FU SSM3K03TE zener diode reference guide US6 KEC SSM5G01TU 3402C-0209

2SK4207

Abstract: to220sis ) SSM5N05FU(1.2) SSM6L09FU(1.2) 0.4 SSM6N09FU(1.2) SSM3K09FU(1.2) SSM4K27CT(0.205) SSM6L10TU
Toshiba
Original
2SK4207 to220sis TPC8119 2SK4112 TK40A08K3 tk80A08K3 BCJ0082B BCJ0082A

TPCA*8030

Abstract: lm2804 SSM6N15FU SSM6N44FU SSM6N09FU SSM6N17FU SSM6N7002FU SSM6N7002AFU SSM6N7002BFU SSM6P35FU SSM6P16FU
Toshiba
Original
TPCA*8030 lm2804 TPCA*8036 Sj 88a diode 2SK2033 TPCA8028 TC7SHU04FU SC-88A TC7SH08FU TC7SH14FU TC7SH32FU TC7SH86FU

2SK1603

Abstract: 2SK2056 * HN1K02FU HN1K03FU HN1K05FU HN1K06FU 5SSM6N04FU vSSM6N16FU SSM6N05FU vSSM6N15FU SSM6N09FU
Toshiba
Original
2SK1603 2SK2056 2SK1377 2SK1349 2SK1117 2sk2402 SC-70 2SK1830 2SK2825 2SK2824 2SK2035 2SK2034

SSM3J307T

Abstract: tpc8118 equivalent replacement ž' SSM6L09FU(1.2)âž' 0.4 SSM6N09FU(1.2)âž' SSM3K09FU(1.2)âž' SSM4K27CT(0.205)➠SSM6L10TU(0.145)â
Toshiba
Original
SSM3J307T tpc8118 equivalent replacement BCE0082A

TPCA8077

Abstract: TK12A10K3 (1.2) 0.4 SSM6N09FU(1.2) SSM3K09FU(1.2) SSM4K27CT(0.205) SSM6L10TU(0.145) SSM6L11TU(0.145
Toshiba
Original
TPCA8077 TK12A10K3 TK25E06K3 TJ11A10M3 TPC8217-H TPCA8057-H BCJ0082C

TPCA*8064

Abstract: TK12A10K3 ) 0.4 SSM3K05FU(1.2) SSM5N05FU(1.2) SSM6L09FU(1.2) 0.4 SSM6N09FU(1.2) SSM3K09FU(1.2
Toshiba
Original
TPCA*8064 SSM3J328 2SK3567 equivalent TPCA8077-H TK50E06K3A TPCA*8077 BCE0082B
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