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Part Manufacturer Description Last Check Distributor Ordering
SSM6N09FU(TE85L,F) Toshiba MOSFET 4,600 from $1.54 (Nov 2016) Chip1Stop Buy
SSM6N09FUT5LFT Toshiba Trans MOSFET N-CH 30V 0.4A 6-Pin SOT-363 Embossed T/R (Alt: SSM6N09FUT5LFT) (Oct 2016) Avnet Buy

SSM6N09FU Datasheet

Part Manufacturer Description PDF Type Ordering
SSM6N09FU Toshiba
ri

4 pages,
196.83 Kb

Original Buy
datasheet frame
SSM6N09FU Toshiba Small-Signal MOS FETs (Dual); Surface Mount Type: Y; Package: US6; XJE016 JEITA: SC-88; Number of Pins: 6; Internal connection: Independent; V_DS(Q1), max (V): (max 30); V_GSS(Q1), max (V): (max +/-20); I_D Q1, max (mA): (max 400)
ri

5 pages,
143.75 Kb

Original Buy
datasheet frame
SSM6N09FU Toshiba Field Effect Transistor Silicon N Channel MOS Type
ri

4 pages,
199.91 Kb

Original Buy
datasheet frame

SSM6N09FU

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: SSM6N09FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N09FU High Speed , anti-static materials. 1 2007-11-01 SSM6N09FU Marking Equivalent Circuit (top view) 6 Figure 1 , this into consideration for using the device. 2 2007-11-01 SSM6N09FU (Q1, Q2 common) ID ­ , ID (mA) 3 2007-11-01 SSM6N09FU (Q1, Q2 common) Vth ­ Ta 2 1000 Common Source 1.8 IDR , 160 Ambient temperature Ta (°C) *: Total rating 4 2007-11-01 SSM6N09FU RESTRICTIONS ... Toshiba
Original
datasheet

5 pages,
157.99 Kb

SSM6N09FU TEXT
datasheet frame
Abstract: SSM6N09FU NMOS SSM6N09FU : mm · · : Ron = 0.7 (max) (@VGS = 10 V , 3 1 2 3 1 2007-11-01 SSM6N09FU (Ta = 25°C) (Q1, Q2 , (on) Vth GS (off) Vth V V (VGS (off) < Vth < VGS (on) ) 2 2007-11-01 SSM6N09FU (Q1 , (°C) 30 50 100 3 300 ID 500 1000 (mA) 2007-11-01 SSM6N09FU (Q1 , SSM6N09FU · · · · "" · · · · ... Original
datasheet

5 pages,
238.95 Kb

SSM6N09FU TEXT
datasheet frame
Abstract: SSM6N09FU Preliminary TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N09FU , with devices should be made of anti-static materials. 1 2002-01-17 SSM6N09FU Marking , this product. 2 2002-01-17 SSM6N09FU (Q1, Q2 common) ID ­ VDS 1000 Common Source 800 10 4 , (mA) 3 2002-01-17 SSM6N09FU (Q1, Q2 common) Vth ­ Ta 2 1000 Common Source 1.8 IDR ­ , 140 160 Ambient temperature Ta (°C) *: Total rating 4 2002-01-17 SSM6N09FU ... Toshiba
Original
datasheet

5 pages,
227.1 Kb

SSM6N09FU TEXT
datasheet frame
Abstract: SSM6N09FU Preliminary TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N09FU High Speed Switching Applications · Small package · Low Drain-Source ON resistance. : Ron , information contained herein is subject to change without notice. 2001-02-19 1/4 SSM6N09FU Marking , . VGS recommended voltage of 4 V or higher to turn on this product. 2001-02-19 2/4 SSM6N09FU , Drain current 300 ID 500 1000 (mA) 2001-02-19 3/4 SSM6N09FU (Q1, Q2 common ... Toshiba
Original
datasheet

4 pages,
199.91 Kb

SSM6N09FU TEXT
datasheet frame
Abstract: SSM6N09FU Preliminary TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N09FU , 2002-01-17 SSM6N09FU Marking Figure 1: 25.4 mm ´ 25.4 mm ´ 1.6 t, Equivalent Circuit Cu Pad , recommended voltage of 4 V or higher to turn on this product. 2 2002-01-17 SSM6N09FU (Q1, Q2 common , ) 30 50 100 Drain current 3 300 ID 500 1000 (mA) 2002-01-17 SSM6N09FU , Ta (°C) *: Total rating 4 2002-01-17 SSM6N09FU RESTRICTIONS ON PRODUCT USE ... Toshiba
Original
datasheet

5 pages,
143.92 Kb

SSM6N09FU TEXT
datasheet frame
Abstract: SSM6N09FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N09FU High Speed , with devices should be made of anti-static materials. 1 2003-02-19 SSM6N09FU Marking , . VGS recommended voltage of 4 V or higher to turn on this product. 2 2003-02-19 SSM6N09FU , temperature Ta (°C) Drain current ID (mA) 3 2003-02-19 SSM6N09FU (Q1, Q2 common) Vth ­ Ta 2 , 140 160 Ambient temperature Ta (°C) *: Total rating 4 2003-02-19 SSM6N09FU ... Toshiba
Original
datasheet

5 pages,
196.53 Kb

SSM6N09FU TEXT
datasheet frame
Abstract: SSM6N09FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N09FU High Speed , . Start of commercial production 2001-02 1 2014-03-01 SSM6N09FU Marking Figure 1: 25.4 mm , 2014-03-01 SSM6N09FU (Q1, Q2 common) ID – VDS RDS (ON) – ID 1000 2 Common Source Drain , ID (mA) 3 2014-03-01 SSM6N09FU (Q1, Q2 common) Vth – Ta IDR – VDS 1000 2 , 140 160 Ambient temperature Ta (°C) *: Total rating 4 2014-03-01 SSM6N09FU ... Toshiba
Original
datasheet

5 pages,
162.99 Kb

SSM6N09FU TEXT
datasheet frame
Abstract: SSM6N09FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N09FU High Speed , direct contact with devices should be made of anti-static materials. 1 2003-02-19 SSM6N09FU , 2003-02-19 SSM6N09FU (Q1, Q2 common) ID ­ VDS RDS (ON) ­ ID 1000 2 Common Source Drain , ) 2003-02-19 SSM6N09FU (Q1, Q2 common) Vth ­ Ta IDR ­ VDS 2 1000 (mA) 800 D IDR , temperature Ta (°C) *: Total rating 4 2003-02-19 SSM6N09FU RESTRICTIONS ON PRODUCT USE ... Toshiba
Original
datasheet

5 pages,
143.75 Kb

SSM6N09FU TEXT
datasheet frame
Abstract: SSM6N09FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N09FU High Speed , should be made of anti-static materials. 1 2007-11-01 SSM6N09FU Marking Figure 1: 25.4 mm × , 2007-11-01 SSM6N09FU (Q1, Q2 common) ID ­ VDS RDS (ON) ­ ID 1000 2 Common Source Drain , 50 100 300 500 1000 Drain current ID (mA) 3 2007-11-01 SSM6N09FU (Q1, Q2 , 160 Ambient temperature Ta (°C) *: Total rating 4 2007-11-01 SSM6N09FU RESTRICTIONS ... Toshiba
Original
datasheet

5 pages,
133.87 Kb

SSM6N09FU TEXT
datasheet frame
Abstract: SSM6N09FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N09FU High Speed , 2007-11-01 SSM6N09FU Marking Figure 1: 25.4 mm × 25.4 mm × 1.6 t, Equivalent Circuit Cu Pad , for using the device. 2 2007-11-01 SSM6N09FU (Q1, Q2 common) ID – VDS RDS (ON) â , 300 500 1000 Drain current ID (mA) 3 2007-11-01 SSM6N09FU (Q1, Q2 common) Vth â , SSM6N09FU RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates ... Toshiba
Original
datasheet

5 pages,
603.19 Kb

SSM6N09FU TEXT
datasheet frame