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Part : SSM6N09FU(TE85L,F) Supplier : Toshiba Manufacturer : Chip1Stop Stock : 6,700 Best Price : $1.43 Price Each : $1.75
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SSM6N09FU Datasheet

Part Manufacturer Description PDF Type
SSM6N09FU Toshiba Original
SSM6N09FU Toshiba Small-Signal MOS FETs (Dual); Surface Mount Type: Y; Package: US6; XJE016 JEITA: SC-88; Number of Pins: 6; Internal connection: Independent; V_DS(Q1), max (V): (max 30); V_GSS(Q1), max (V): (max +/-20); I_D Q1, max (mA): (max 400) Original
SSM6N09FU Toshiba Field Effect Transistor Silicon N Channel MOS Type Original

SSM6N09FU

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: SSM6N09FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N09FU High Speed , anti-static materials. 1 2007-11-01 SSM6N09FU Marking Equivalent Circuit (top view) 6 Figure 1 , this into consideration for using the device. 2 2007-11-01 SSM6N09FU (Q1, Q2 common) ID ­ , ID (mA) 3 2007-11-01 SSM6N09FU (Q1, Q2 common) Vth ­ Ta 2 1000 Common Source 1.8 IDR , 160 Ambient temperature Ta (°C) *: Total rating 4 2007-11-01 SSM6N09FU RESTRICTIONS Toshiba
Original
Abstract: SSM6N09FU NMOS SSM6N09FU : mm · · : Ron = 0.7 (max) (@VGS = 10 V , 3 1 2 3 1 2007-11-01 SSM6N09FU (Ta = 25°C) (Q1, Q2 , (on) Vth GS (off) Vth V V (VGS (off) < Vth < VGS (on) ) 2 2007-11-01 SSM6N09FU (Q1 , (°C) 30 50 100 3 300 ID 500 1000 (mA) 2007-11-01 SSM6N09FU (Q1 , SSM6N09FU · · · · "" · · · · -
Original
Abstract: SSM6N09FU Preliminary TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N09FU , with devices should be made of anti-static materials. 1 2002-01-17 SSM6N09FU Marking , this product. 2 2002-01-17 SSM6N09FU (Q1, Q2 common) ID ­ VDS 1000 Common Source 800 10 4 , (mA) 3 2002-01-17 SSM6N09FU (Q1, Q2 common) Vth ­ Ta 2 1000 Common Source 1.8 IDR ­ , 140 160 Ambient temperature Ta (°C) *: Total rating 4 2002-01-17 SSM6N09FU Toshiba
Original
Abstract: SSM6N09FU Preliminary TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N09FU High Speed Switching Applications · Small package · Low Drain-Source ON resistance. : Ron , information contained herein is subject to change without notice. 2001-02-19 1/4 SSM6N09FU Marking , . VGS recommended voltage of 4 V or higher to turn on this product. 2001-02-19 2/4 SSM6N09FU , Drain current 300 ID 500 1000 (mA) 2001-02-19 3/4 SSM6N09FU (Q1, Q2 common Toshiba
Original
000707EAA1
Abstract: SSM6N09FU Preliminary TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N09FU , 2002-01-17 SSM6N09FU Marking Figure 1: 25.4 mm ´ 25.4 mm ´ 1.6 t, Equivalent Circuit Cu Pad , recommended voltage of 4 V or higher to turn on this product. 2 2002-01-17 SSM6N09FU (Q1, Q2 common , ) 30 50 100 Drain current 3 300 ID 500 1000 (mA) 2002-01-17 SSM6N09FU , Ta (°C) *: Total rating 4 2002-01-17 SSM6N09FU RESTRICTIONS ON PRODUCT USE Toshiba
Original
Abstract: SSM6N09FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N09FU High Speed , with devices should be made of anti-static materials. 1 2003-02-19 SSM6N09FU Marking , . VGS recommended voltage of 4 V or higher to turn on this product. 2 2003-02-19 SSM6N09FU , temperature Ta (°C) Drain current ID (mA) 3 2003-02-19 SSM6N09FU (Q1, Q2 common) Vth ­ Ta 2 , 140 160 Ambient temperature Ta (°C) *: Total rating 4 2003-02-19 SSM6N09FU Toshiba
Original
Abstract: SSM6N09FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N09FU High Speed , . Start of commercial production 2001-02 1 2014-03-01 SSM6N09FU Marking Figure 1: 25.4 mm , 2014-03-01 SSM6N09FU (Q1, Q2 common) ID â'" VDS RDS (ON) â'" ID 1000 2 Common Source Drain , ID (mA) 3 2014-03-01 SSM6N09FU (Q1, Q2 common) Vth â'" Ta IDR â'" VDS 1000 2 , 140 160 Ambient temperature Ta (°C) *: Total rating 4 2014-03-01 SSM6N09FU Toshiba
Original
Abstract: SSM6N09FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N09FU High Speed , direct contact with devices should be made of anti-static materials. 1 2003-02-19 SSM6N09FU , 2003-02-19 SSM6N09FU (Q1, Q2 common) ID ­ VDS RDS (ON) ­ ID 1000 2 Common Source Drain , ) 2003-02-19 SSM6N09FU (Q1, Q2 common) Vth ­ Ta IDR ­ VDS 2 1000 (mA) 800 D IDR , temperature Ta (°C) *: Total rating 4 2003-02-19 SSM6N09FU RESTRICTIONS ON PRODUCT USE Toshiba
Original
Abstract: SSM6N09FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N09FU High Speed , 2007-11-01 SSM6N09FU Marking Figure 1: 25.4 mm × 25.4 mm × 1.6 t, Equivalent Circuit Cu Pad , for using the device. 2 2007-11-01 SSM6N09FU (Q1, Q2 common) ID â'" VDS RDS (ON) â , 300 500 1000 Drain current ID (mA) 3 2007-11-01 SSM6N09FU (Q1, Q2 common) Vth â , SSM6N09FU RESTRICTIONS ON PRODUCT USE â'¢ Toshiba Corporation, and its subsidiaries and affiliates Toshiba
Original
Abstract: SSM6N09FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N09FU High Speed , should be made of anti-static materials. 1 2007-11-01 SSM6N09FU Marking Figure 1: 25.4 mm × , 2007-11-01 SSM6N09FU (Q1, Q2 common) ID ­ VDS RDS (ON) ­ ID 1000 2 Common Source Drain , 50 100 300 500 1000 Drain current ID (mA) 3 2007-11-01 SSM6N09FU (Q1, Q2 , 160 Ambient temperature Ta (°C) *: Total rating 4 2007-11-01 SSM6N09FU RESTRICTIONS Toshiba
Original
Abstract: SSM5N03FE 508 SSM6N05FU 700 2SK1829 146 SSM3K01T 306 SSM5N05FU 512 SSM6N09FU , ±20 3000 SSM3K12T 30 ±20 1500 SSM6K07FU 30 ±20 400 SSM6N09FU 30 , SSM6N09FU VDSS (V) Nch × 2 HN1K05FU VDSS (V) ID (mA) US6 US6 UF6 UF6 Toshiba
Original
050106DAA1 2SJ148 2SJ167 SSM3K16TE 8aa1 esm 310 2SJ344 2SJ345 2SJ346 SSM3J01T SSM3K16FV SSM3J02F
Abstract: SSM3K03FE x2 v SSM6N09FU SSM3K09FU x2 v SSM6P09FU SSM3J09FU x2 v SSM6L09FU SSM3K09FU+ SSM3J09FU HN1K02FU Toshiba
Original
SCS-70 SSM6J08FU HN1K06FU SC-59 2SK1825 2SK1826 2SJ342 2SJ343
Abstract: SSM6N05FU 1122 SSM3J02F 706 SSM3K12T 820 SSM5N16FE 984 SSM6N09FU 1126 SSM3J02T , 400 20 200 0.6 ~ 1.1 0.85 1.2 200 2.5 DF SSM6N09FU 400 30 200 Toshiba
Original
TOSHIBA MG150N2YS40 mg75n2ys40 MG15N6ES42 mg150n2ys40 2SK150A toshiba s2530a YTF230 S2543
Abstract: 2.5 30 ±20 400 - - - SSM6N09FU SSM3K09FU × 2 1.1 1.8 0.8 1.2 4 Toshiba
Original
SSM3K7002 SSM3J16FU zener diode reference guide SSM3K03TE US6 KEC SSM5G01TU 3402C-0209
Abstract: ) SSM5N05FU(1.2) SSM6L09FU(1.2) 0.4 SSM6N09FU(1.2) SSM3K09FU(1.2) SSM4K27CT(0.205) SSM6L10TU Toshiba
Original
2SK4207 to220sis TPCA*8023 2SK4112 TPC8119 tk80A08K3 BCJ0082B BCJ0082A
Abstract: SSM6N15FU SSM6N44FU SSM6N09FU SSM6N17FU SSM6N7002FU SSM6N7002AFU SSM6N7002BFU SSM6P35FU SSM6P16FU Toshiba
Original
TPCA*8030 lm2804 TPCA*8036 2SK2033 TPC8A03 TPC8037 TC7SHU04FU SC-88A TC7SH08FU TC7SH14FU TC7SH32FU TC7SH86FU
Abstract: * HN1K02FU HN1K03FU HN1K05FU HN1K06FU 5SSM6N04FU vSSM6N16FU SSM6N05FU vSSM6N15FU SSM6N09FU Toshiba
Original
2SK1603 2SK2056 2SK1377 2SK1349 2SK1117 2sk2402 SC-70 2SK1830 2SK2825 2SK2824 2SK2035 2SK2034
Abstract: ž' SSM6L09FU(1.2)âž' 0.4 SSM6N09FU(1.2)âž' SSM3K09FU(1.2)âž' SSM4K27CT(0.205)➠SSM6L10TU(0.145)â Toshiba
Original
tpc8118 equivalent replacement BCE0082A
Abstract: (1.2) 0.4 SSM6N09FU(1.2) SSM3K09FU(1.2) SSM4K27CT(0.205) SSM6L10TU(0.145) SSM6L11TU(0.145 Toshiba
Original
TPCA8077 TK12A10K3 TK25E06K3 TJ11A10M3 TPCA8057-H TPC8217-H BCJ0082C
Abstract: ) 0.4 SSM3K05FU(1.2) SSM5N05FU(1.2) SSM6L09FU(1.2) 0.4 SSM6N09FU(1.2) SSM3K09FU(1.2 Toshiba
Original
TPCA*8064 SSM3J328 2SK3567 equivalent TPCA8077-H TK50E06K3A TPCA*8077 BCE0082B
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