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6116SA90DB Integrated Device Technology Inc CDIP-24, Tube visit Integrated Device Technology Buy
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SRAM 6116

Catalog Datasheet MFG & Type PDF Document Tags

d401a

Abstract: SRAM 6116 * SRAM OR General Purpose Logic ASIC SRAM 6116 7164 71256 and many more April 2000 , Logic Via JTAG ISP Port SRAM I/O Ports (Microcontroller) Flash Decode Your MCU , section: April 2000 200004otppsd EasyFLASHTM 9 EPROM DECODE PLD SRAM 2nd Chip , 2.7 V O LTS I/O PORT SRAM PROGRAMMABLE SCRATCH PAD Configuration, PLD, & FLASH Memory , SRAM 16Kbits TRACK MODE SELECTS GENERAL PURPOSE PA0-PA7 MCU I/O ADDRESS OUT TRACK MODE
WaferScale Integration
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80C31 MICROCONTROLLER development board ATMEL

Abstract: Z280 MPU PLDs - GALs/PALs CPLDs FPGAs SRAM 6116 7164 71256 and many more EE PROM I/O PORTS , SRAM External Chip Selects PMU EasyFLASHTM 7 Pin Compatible adding CPLD If additional , Concurrent/Boot Flash ISP ISP via JTAG Scratch PAD Loader SRAM I/O Ports Flash , Port E) I/O PORT I/O PORT SCRATCH PAD SRAM Memory, PLD, & Configuration SIMPLE PLD , 6=Triple Flash Array SRAM Size 0=No RAM 1=16Kb 2=32Kb 3=64Kb 4=128Kb 5=256Kb 6=512Kb
WaferScale Integration
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89c8252

Abstract: NEC 78F9026 ­ Blank Device, No Interaction of MCU Required Flash Flash or EEPROM SRAM Via JTAG , Reprogram Flash or EEPROM or EEPROM (Microcontroller) Via JTAG ISP Port SRAM · · 2 , of IAP FLASH #1 ­ Current system solutions are: · Download and execute from SRAM (risky,power , 80C51 can write to is the "data space" · Typically a small SRAM, changed frequently · The Flash , algorithms from UART into SRAM. The small on chip SRAM then performs the programming sequence. Or contains
WaferScale Integration
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89c8252 NEC 78F9026 28C64 EPROM programmer 82C55 NEC 89C52 MICROCONTROLLER DATASHEET free download INTEL END OF LIFE 80C196 1-877-WSI-PSDS

6116 RAM

Abstract: ic 6116 2016/6116/9128 2K x 8 SRAM Page 1 of 5 2016/6116/9128 - 2048x8 bit Static RAM Description , 9/14/2003 2016/6116/9128 2K x 8 SRAM , ://www.lami.pucpr.br/~afonso/Datasheet/2016.html 9/14/2003 2016/6116/9128 2K x 8 SRAM Page 3 of 5 Used In , SRAM ? Sharp LH5116 ? Page 4 of 5 Synertek SY2128 Can substitute: 2016 and 6116 parts , 2016/6116/9128 2K x 8 SRAM Page 5 of 5 United Microelectronics Corporation Memory IC's Data Book
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TMM2016 6116 RAM ic 6116 6116 SRAM 6116 ram 6116 5M5517 M58725 MK4802 MCM4016 MCM65116 TMS4016

6167

Abstract: ss 9509 Detailed Lot Performance Section VII: SRAM Detailed Lot Performance Section I INTRODUCTION , offers more than 5,000 devices from four product families, including SRAM (Static Random Access Memory , 5.5V, Ea = 0.5 eV, ß=0.82, C.L. = 60% Product Line: SRAM CEMOS 5 14 4 1,623 76,924,965 , Product Line: RISC 0 Product Line: SMP 18 Product Line: SRAM 54 4 This test does not , Product Line: SRAM 57 4 This test does not normally apply to RISC product. II-2 IDT
Integrated Device Technology
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SOJ-24 11V256 71V256 6167 ss 9509 71B74 A110 71215 71024 61B98 SOJ-28 SOJ-32 TQFP-80 PDIP-20

power supply ic 9435

Abstract: 9435, ic Detailed Lot Performance Section VII: SRAM Detailed Lot Performance Section I INTRODUCTION , offers more than 5,000 devices from four product families, including SRAM (Static Random Access Memory , 5.5V, Ea = 0.5 eV, ß=0.82, C.L. = 60% Product Line: SRAM CEMOS 5 14 4 1,623 76,924,965 , Product Line: RISC 0 Product Line: SMP 18 Product Line: SRAM 54 4 This test does not , Product Line: SRAM 57 4 This test does not normally apply to RISC product. II-2 IDT
Integrated Device Technology
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power supply ic 9435 9435, ic ic 9435 9435 49C460 report on PLCC PDIP-24 PDIP-28 SOIC-28 TSOP-28 VII-14

hm6116l -70

Abstract: 6116 RAM M^E D â  58bö45b DG0131à 037 â MUHS MATRA MHS September 1990 DATA SHEET HM 6116 2 kx 8 GENERAL PURPOSE CMOS SRAM ACCESSS TIME MILITARY : 120 ns (max) INDUSTRIAL : 120 ns (max) COMMERCIAL : 120 ns (max , DESCRIPTION The HM 6116 is a low power CMOS static RAM or-ganized as 2048 x 8 bits. It is manufactured using , available with a maximum power consumption of only 385 mW. The HM 6116 features fully static opération , HM 6116 are TTL compatible and operate from single 5 V supply thus simplifying system design. The HM
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hm6116l -70 chip diagram of ram chip 6116 6116 CMOS RAM memory 6116 HM 6116 RAM 6116 RAM expansion circuit
Abstract: March 1994 HM 6116 DATA SHEET 2 Kx 8 GENERAL PURPOSE CMOS SRAM FEATURES . . , °C INTRODUCTION The HM 6116 is a very low power CMOS static RAM organized as 2048 x 8 bits. It is manufactured , . The HM 6116 are TTL compatible and operate from single 5 V supply thus simplifying system design. The HM 6116 is 100 % processed following the test methods of MIL STD 883C and/or ESA/SCC 9000 , and reliability. The HM 6116 features fully static operation requiring no external clocks or -
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6116/R

6116 RAM

Abstract: SRAM 6116 him MMS DATA SHEET March 1994 HM 6116 2 K x 8 GENERAL PURPOSE CMOS SRAM FEATURES ACCESS , HM 6116 is a very low power CMOS static RAM organized as 2048 x 8 bits. It is manufactured using the , with a maximum power consumption of only 385 mW. The HM 6116 features fully static operation requiring , HM 6116 are TTL compatible and operate from single 5 V supply thus simplifying system design. The HM 6116 Is 100 % processed following the test methods of MIL STD 883C and/or ESA/SCC 9000, making it
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6116 memory 6116 memory chip 6116 SRAM HM6116 A6J4 6ll6

ES 61162

Abstract: h im HM 6116 DATA SHEET 2 Kx 8 GENERAL PURPOSE CMOS SRAM FEATURES 600 MILS WIDTH , HM 6116 is a very low power CMOS static RAM organized as 2048 x 8 bits. It is manufactured using the , commercial temperature range is available with a maximum power consumption of only 385 mW. The HM 6116 are TTL compatible and operate from single 5 V supply thus simplifying system design. The HM 6116 is , . The HM 6116 features fully static operation requiring no external clocks or timing strobes. Thanks to
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ES 61162 HM6116/R

6116 RAM

Abstract: 6116 Mill IraKI March 1994 DATASHEET_HM 6116 2 K X 8 GENERAL PURPOSE CMOS SRAM FEATURES . ACCESS , INTRODUCTION The HM 6116 is a very low power CMOS static RAM organized as 2048 x 8 bits. It is manufactured , available with a maximum power consumption of only 385 mW. The HM 6116 features fully static operation , drivers. The HM 6116 are TTL compatible and operate from single 5 V supply thus simplifying system design. The HM 6116 is 100 % processed following the test methods of MIL STD 883C and/or ESA/SCC 9000, making
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6116 static ram decoder 6116 DESCRIPTION 6116 hm6116 battery HM6116L-5 HM61

6116 block diagram

Abstract: Irillll I V i l l l September 1989 HM 6116 DATA SHEET_ 2kx8 GENERAL PURPOSE CMOS SRAM FEATURES TTL COMPATIBLE INPUTS AND OUTPUTS ASYNCHRONOUS SINGLE 5 VOLT SUPPLY EQUAL , three state drivers. The HM 6116 are TTL compatible and operate from single 5 V supply thus simplifying system design. The HM 6116 is processed following the test methods of MIL STD 883C. The HM 6116 is a low power CMOS static RAM or­ ganized as 2048 x 8 bits. It is manufactured using the MHS
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6116 block diagram F12-H F0F11

NEC D2732

Abstract: 41C1000 5118160 4218160 5118160 5116160 4M x 4 (16M) SRAM ORGANIZATION/ DENSITY FUJISTU GOLDSTAR , 6116 6116 5117 6516 8K x 8(64K) 8464 76C88 6264 6264 5165 6264/6265 , 628400 5408 N/A N/A SRAM continued below ORGANIZATION/ DENSITY NEC UPD OKI MSM , x 8(4MEG) 434000 N/A 684000 584000 554002 584001 CACHE SRAM ORGANIZATION/ ALLIANCE
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71C256 41C1000 27C32 27C32Q NEC D2732 81c4256 41256 6264 SRAM 44256 dram 53C256 81C1000 71C1000 4C1024 81C4256

6264 SRAM

Abstract: SRAM 6264 UALON MICROELECTRONICS 2ME D HM6116 2K X 8 SRAM m M S T a o m DQJOOSB a T~ â'˜â Rp ~3.3-l3~. H M 6264/L 8K 8 SRAM X M Features Features * High speed - 70/100/120 ns (MAX.) * Low Power dissipation: 250mW ( Ty p .) Operating. 5 /tW ( Ty p .) Standby. * Single 5V power supply. * Fully static operation. * All inputs.and outputs directly TTL compatible , Pin Assignment HM 6116 A7C A6C A5C A4C A3 C A2C A1C A0 C 1 2 3 4 5 6 7 8 l
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SRAM 6264 HM6264 HM6264/L

49LF002A

Abstract: 2732 eprom WICE-8MA EPROM/SRAM Emulaor WICE-8MA Capacity Quantity Device Low voltage Device 2K 8 2 2716 4K 8 2 2732 8K 8 2 2764 16K 8 2 27128 32K 8 2 27256 64K 8 2 27512 128K 8 2 , 1 271024 27LV1024 128K 16 1 272048 27LV2048 256K 16 1 274096 27LV4096 2K 8 2 6116 8K , in-circuit 10. Speed of Emulation SRAM access emulator for developing and debugging time +10ns 30ns ROM/SRAM applications. It offers realtime emulation up to 8M-bit .WICE-8MA Standard Accessories interface
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N82802AB 49LF002A 49LF004 49LF020 49LF008A 2732 eprom 49lf003a EPROM 271024 49lf004a 27LV010 27LV020 27LV040 1024K 27LV080 9X/2000/NT

CD6116

Abstract: SRAM 6116 expensive solution. A lower cost solution would be to use a PSD3XX and SRAM in "TRACK MODE". The PSD3XX also replaces the glue logic, EPROM, SRAM and I/O port requirements of the microcontroller based , 's 80C31s. In figure 2, a common SRAM CD6116 and a `373 Latch are the shared resources of the Master/Slave , , the master processor and the master PSD3XX are in control of the shared LATCH and SRAM, i.e., pins P1 , access the shared LATCH and SRAM, requests the control of the address/data bus from the master processor
WaferScale Integration
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80C31 80c31s AD10 AD11 AD12 intel 6116

61L16

Abstract: G round SRAM The M C M 6116 is a 16,384-bit S ta tic Random A ccess M em o ry organized as , degradation. T he M C M 6116 is in a 24-pin dua l-in-line package w ith the in dustry standard JEDEC , % te s te d . RECOMMENDED OPERATING CHARACTERISTICS P aram eter M C M 61L16 M CM 6116 S ym , < SRAM (F u ll o p e ra tin g v o lta g e a n d te m p e ra tu re ra n g e s u n le s s o th e rw is e , SRAM ns MCM6116 SRAM W R IT E C Y C L E T IM IN G 1 (N O T E 4) 4 . W r it e E n a b le
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philips HD15

Abstract: philips hd9 memory SRAM timing External memory DRAM timing Sub-CPU interface timing ATAPI host interface timing SANYO , Program Interface (ATAPI) command set · Operates with popular memories, (up to 128 kbyte SRAM; 1 to 16 , thus enabling the connection of SRAM up to 128 kbytes, or DRAM up to 16 Mbits. The on-chip memory is , < RESET - SVN - SRAM CACHE MEMORY MANAGER - RA16/CAS - RA15/RAS - RWE RDO to RD7 38 MICRO CONTROLLER , line 10 buffer RAM address bus output line 11 (SRAM) only buffer RAM address bus output line 12 (SRAM
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philips HD15 philips hd9 philips HD11 OTI-O12 elm cst SAA7388

16kx8 static ram ttl

Abstract: 1K x 8 static ram 1KX4 CORNER POWER Bi SRAM, ECL-10K I/O 16KX1 Bi SRAM, ECL-10K I/O 4KX4 Corner Power Bi SRAM, ECL-10K I/O 64KX1 Bi SRAM, ECL-10K I/O 16KX4 Bi SRAM, ECL-10K I/O 64KX4 Bi SRAM, ECL-10K I/O 1KX4 CENTER POWER Bi SRAM WITH ECL-10K I/O 4KX4 CENTER POWER Bi SRAM WITH ECL-10K I/O 4K X 4 ECL I/O SRAM Octal , 54/74FCT88915TT 6116 61298 6167 6168 6178 6198 7005 7006 7007 7008 70121 70125 7014 , 64Kx4 Static RAM 16Kx1 Static RAM 4Kx4 Static RAM 4Kx4 Cache Tag SRAM 16Kx4 Static RAM with OE 8K x
Integrated Device Technology
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29FCT520 29FCT520T 29FCT52T 16kx8 static ram ttl 1K x 8 static ram c 3198 transistor MQUAD 70V24 10A474 10A484 10B484 29FCT2052 29FCT52

6116 SRAM

Abstract: IZ48 EAD C YCLES ' khadsx- MCM72BF32.MCM72BF64 6-116 MOTOROLA FAST SRAM tK H K I ' -IKLXH , is a tra d e m a i k o f Intel Corp. 5 /9 5 MCM72BF32*MCM72BF64 6-108 MOTOROLA F :AST SRAM , ADV1 G1 Vççs ADSP1 vss MOTOROLA FAST SRAM MCM72BF32.MCM72BF64 6-109 64K x 72 BurstRAM , . MCM72BF32«MCM72BF64 6-110 MOTOROLA FAST SRAM 32K X 72 BurstRAM MEMORY MODULE BLOCK DIAGRAM A1B A 7-A 17 , DQO - DQ63 and DOPO - DQP7 have 20 £2 series termination resist« rs. MOTOROLA FAST SRAM
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IZ48 256KB 512KB 160-LEAD 72BF32 MCM72BF32SG66 MCM72BF64SG66
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