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Part : SPP11N60C3 Supplier : Infineon Technologies Manufacturer : Avnet Stock : 2,500 Best Price : $1.2321 Price Each : $1.3729
Part : SPP11N60C3 Supplier : Infineon Technologies Manufacturer : Avnet Stock : - Best Price : €1.1943 Price Each : €1.7782
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Part : SPP11N60C3HKSA1 Supplier : Infineon Technologies Manufacturer : Newark element14 Stock : - Best Price : - Price Each : -
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Part : SPP11N60C3 Supplier : Infineon Technologies Manufacturer : Rochester Electronics Stock : 38,909 Best Price : $1.41 Price Each : $1.74
Part : SPP11N60C3XKSA1 Supplier : Infineon Technologies Manufacturer : Rochester Electronics Stock : 2,757 Best Price : $1.41 Price Each : $1.74
Part : SPP11N60C3 Supplier : Intersil Manufacturer : Bristol Electronics Stock : 36 Best Price : $1.5938 Price Each : $2.55
Part : SPP11N60C3 Supplier : Infineon Technologies Manufacturer : Bristol Electronics Stock : 216 Best Price : - Price Each : -
Part : SPP11N60C3 Supplier : Infineon Technologies Manufacturer : RS Components Stock : 150 Best Price : £1.0520 Price Each : £1.0890
Part : SPP11N60C3 Supplier : Infineon Technologies Manufacturer : RS Components Stock : 435 Best Price : £1.5820 Price Each : £1.9780
Part : SPP11N60C3 Supplier : Infineon Technologies Manufacturer : Rutronik Stock : 900 Best Price : $1.48 Price Each : $1.58
Part : SPP11N60C3 Supplier : Infineon Technologies Manufacturer : Chip1Stop Stock : 500 Best Price : $1.03 Price Each : $2.05
Part : SPP11N60C3XKSA1 Supplier : Infineon Technologies Manufacturer : Chip1Stop Stock : 400 Best Price : $1.80 Price Each : $1.80
Part : SPP11N60C3XKSA1 Supplier : Infineon Technologies Manufacturer : element14 Asia-Pacific Stock : 224 Best Price : $1.32 Price Each : $2.6320
Part : SPP11N60C3HKSA1 Supplier : Infineon Technologies Manufacturer : Farnell element14 Stock : - Best Price : £1.39 Price Each : £2.08
Part : SPP11N60C3XKSA1 Supplier : Infineon Technologies Manufacturer : Farnell element14 Stock : 224 Best Price : £1.11 Price Each : £1.89
Part : SPP11N60C3 Supplier : Infineon Technologies Manufacturer : Wuhan P&S Stock : 100 Best Price : $1.43 Price Each : $1.76
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SPP11N60C3 Datasheet

Part Manufacturer Description PDF Type
SPP11N60C3 Infineon Technologies Cool MOS Power Transistor Original
SPP11N60C3 Infineon Technologies N-Channel MOSFETs (>500V - 900V); Package: PG-TO220-3; V<sub>DS</sub> (max): 600.0 V; Package: TO-220; R<sub>DS(ON)</sub> @ T<sub>J</sub>=25°C V<sub>GS</sub>=10: 380.0 mOhm; I<sub>D(max)</sub> @ T<sub>C</sub>=25°C: 11.0 A; I<sub>Dpuls</sub> (max): 33.0 A; Original
SPP11N60C3 Infineon Technologies CoolMOS Power MOSFET, 600V, TO-220, RDSon=0.38 ?, 11.0A Original
SPP11N60C3 Infineon Technologies Cool MOS Power Amp., 650V 11A 125W, MOS-FET N-Channel enhanced Original

SPP11N60C3

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: SPP11N60C3 SPI11N60C3, SPA11N60C3 Cool MOSTM Power Transistor Feature · New revolutionary high , ) Type SPP11N60C3 SPI11N60C3 SPA11N60C3 Package PG-TO220 PG-TO262-3 Ordering Code Q67040-S4395 , -55.+150 2005-09-21 SPP11N60C3 SPI11N60C3, SPA11N60C3 Maximum Ratings Parameter Drain Source , ) Gate input resistance RG f=1MHz, open drain Rev. 2.6 Page 2 2005-09-21 SPP11N60C3 , SPP11N60C3 SPI11N60C3, SPA11N60C3 Electrical Characteristics Parameter Inverse diode continuous forward Infineon Technologies
Original
SP000216312 11N6 P-TO220-3-31 PG-TO220-3-31 PG-TO-220-3-31 Q67042-S4403 11N60C3
Abstract: SPP11N60C3, SPB11N60C3 SPI11N60C3, SPA11N60C3 Final data Cool MOSTM Power Transistor VDS , ) Type Package Ordering Code Marking SPP11N60C3 P-TO220-3-1 Q67040-S4395 11N60C3 , SPP11N60C3, SPB11N60C3 SPI11N60C3, SPA11N60C3 Maximum Ratings Parameter Symbol Drain Source , - f=1MHz, open drain - 0.86 - Page 2 2003-07-01 Final data SPP11N60C3 , rising from 0 to 80% VDSS. Page 3 2003-07-01 SPP11N60C3, SPB11N60C3 SPI11N60C3, SPA11N60C3 Infineon Technologies
Original
transistor 11n60c3 11N60C 11N60 P-TO262-3-1 P-TO263-3-2 P-TO-220-3-31 Q67040-S4396 Q67040-S4408
Abstract: Preliminary data SPP11N60C3, SPB11N60C3 SPI11N60C3 Cool MOSTM=Power Transistor = C OLMOS , operating temperature Type Package Ordering Code Marking SPP11N60C3 P-TO220 , 2001-07-05 Preliminary data SPP11N60C3, SPB11N60C3 SPI11N60C3 Thermal Characteristics Parameter , 2001-07-05 Preliminary data SPP11N60C3, SPB11N60C3 SPI11N60C3 Electrical Characteristics , at Tj = , from 0 to 80% VDSS . Page 3 2001-07-05 Preliminary data SPP11N60C3, SPB11N60C3 SPI11N60C3 Infineon Technologies
Original
TRANSISTOR SMD MARKING CODE 7A
Abstract: SPP11N60C3 SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185 Cool MOSTM Power Transistor VDS @ Tjmax , Ordering Code Marking SPP11N60C3 PG-TO220 Q67040-S4395 11N60C3 SPI11N60C3 PG-TO262 , ) ID=11A, VDD=50V Rev. 3 . 1 Page 1 -55.+150 15 W °C V/ns 2007-08-30 SPP11N60C3 , f=1MHz, open drain - 0.86 - Page 2 2007-08-30 SPP11N60C3 SPI11N60C3, SPA11N60C3 , 2007-08-30 SPP11N60C3 SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185 Electrical Characteristics Symbol Infineon Technologies
Original
SPA11N60C3E8185 SPA11N60C3 equivalent SPD06S60 SPI11N60C3 SMD SPI11N60C3 equivalent PG-TO-220-3-1 PG-TO220FP
Abstract: Final data SPP11N60C3, SPB11N60C3 SPI11N60C3, SPA11N60C3 Cool MOSTM Power Transistor VDS , ) Type Package Ordering Code Marking SPP11N60C3 P-TO220-3-1 Q67040-S4395 11N60C3 , =100A/us, Tjmax =150°C Page 1 -55.+150 V W °C 2002-10-15 SPP11N60C3, SPB11N60C3 , Final data SPP11N60C3, SPB11N60C3 SPI11N60C3, SPA11N60C3 Electrical Characteristics Parameter , charging time as Coss while VDS is rising from 0 to 80% VDSS . Page 3 2002-10-15 SPP11N60C3 Infineon Technologies
Original
Abstract: SPP11N60C3 SPI11N60C3, SPA11N60C3 Cool MOSTM Power Transistor Feature · New revolutionary high , ; 1 minute) Type SPP11N60C3 SPI11N60C3 SPA11N60C3 Package Ordering Code Marking 11N60C3 , SPP11N60C3 SPI11N60C3, SPA11N60C3 Maximum Ratings Parameter Drain Source voltage slope VDS = 480 V, ID = 11 , resistance RG f=1MHz, open drain Rev.2.2 Page 2 2005-02-09 SPP11N60C3 SPI11N60C3 , while VDS is rising from 0 to 80% VDSS. Rev.2.2 Page 3 2005-02-09 SPP11N60C3 SPI11N60C3 Infineon Technologies
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PG-TO262-3-1 PG-TO220-3-1
Abstract: SPP11N60C3, SPB11N60C3 SPI11N60C3, SPA11N60C3 Cool MOSTM Power Transistor Feature · New , isolated package (2500 VAC; 1 minute) Type SPP11N60C3 SPB11N60C3 SPI11N60C3 SPA11N60C3 Maximum Ratings , °C Operating and storage temperature -55.+150 Rev.2.1 Page 1 2004-09-07 SPP11N60C3 , drain Rev.2.1 Page 2 2004-09-07 SPP11N60C3, SPB11N60C3 SPI11N60C3, SPA11N60C3 Electrical , from 0 to 80% VDSS. Rev.2.1 Page 3 2004-09-07 SPP11N60C3, SPB11N60C3 SPI11N60C3 Infineon Technologies
Original
Abstract: SPP11N60C3 SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185 Cool MOSTM Power Transistor Feature · New , VAC; 1 minute) Type SPP11N60C3 SPI11N60C3 SPA11N60C3 Package PG-TO220 PG-TO262 PG-TO220FP , temperature Reverse diode dv/dt 7) Rev. 2.9 -55.+150 2007-01-17 SPP11N60C3 SPI11N60C3, SPA11N60C3 , drain Rev. 2.9 Page 2 2007-01-17 SPP11N60C3 SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185 , switch. Rev. 2.9 Page 3 2007-01-17 SPP11N60C3 SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185 Infineon Technologies
Original
Abstract: SPP11N60C3 SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185 Cool MOSâ"¢ Power Transistor VDS @ Tjmax , Package Ordering Code Marking SPP11N60C3 PG-TO220 Q67040-S4395 11N60C3 SPI11N60C3 , 2012-10-16 SPP11N60C3 SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185 Maximum Ratings Parameter Symbol , 2012-10-16 SPP11N60C3 SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185 Electrical Characteristics Parameter , SPP11N60C3 SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185 Electrical Characteristics Symbol Parameter Infineon Technologies
Original
PG-TO-220-3-21 PG-TO-220-3-31/3-111 2500VAC
Abstract: Preliminary data SPP11N60C3, SPB11N60C3 SPI11N60C3 Cool MOSTM=Power Transistor Feature New , -3-2 650 0.38 11 V A P-TO220-3-1 Type SPP11N60C3 SPB11N60C3 SPI11N60C3 Package P-TO220 , for 10s Tsold RthJC RthJA RthJA SPP11N60C3, SPB11N60C3 SPI11N60C3 Symbol min. - Values typ , Preliminary data SPP11N60C3, SPB11N60C3 SPI11N60C3 Values min. typ. 8.3 1460 610 21 45 85 10 5 44 5 max , rising from 0 to 80% VDSS . Page 3 2001-05-28 Preliminary data SPP11N60C3, SPB11N60C3 Infineon Technologies
Original
Abstract: Preliminary data SPP11N60C3, SPB11N60C3 SPI11N60C3 Cool MOSTM=Power Transistor Feature ·=New , 11 V A P-TO220-3-1 Type SPP11N60C3 SPB11N60C3 SPI11N60C3 Package P-TO220-3-1 P-TO263 , RthJA SPP11N60C3, SPB11N60C3 SPI11N60C3 Symbol min. - Values typ. 35 max. 1 62 62 1 260 Unit , vertical without blown air. Page 2 2001-11-16 Preliminary data SPP11N60C3, SPB11N60C3 SPI11N60C3 , Page 3 2001-11-16 Preliminary data SPP11N60C3, SPB11N60C3 SPI11N60C3 Values min. typ. 1 400 Infineon Technologies
Original
AR1010
Abstract: SPP11N60C3 SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185 Cool MOSTM Power Transistor Feature · New , VAC; 1 minute) Type SPP11N60C3 SPI11N60C3 SPA11N60C3 Package PG-TO220 PG-TO262 PG-TO220FP , 2012-10-16 SPP11N60C3 SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185 Maximum Ratings Parameter Drain Source , ) Gate input resistance RG f=1MHz, open drain Rev. 3.3 Page 2 2012-10-16 SPP11N60C3 , 2012-10-16 SPP11N60C3 SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185 Electrical Characteristics Parameter Infineon Technologies
Original
Abstract: SPP11N60C3 SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185 Cool MOSTM Power Transistor VDS @ Tjmax , Ordering Code Marking SPP11N60C3 PG-TO220 Q67040-S4395 11N60C3 SPI11N60C3 PG-TO262 , SPP11N60C3 SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185 Maximum Ratings Parameter Symbol Drain Source , 2009-11-27 SPP11N60C3 SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185 Electrical Characteristics Parameter , SPP11N60C3 SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185 Electrical Characteristics Symbol Parameter Infineon Technologies
Original
Abstract: SPP11N60C3 SPI11N60C3, SPA11N60C3 Cool MOSTM Power Transistor VDS @ Tjmax 650 V RDS , Marking SPP11N60C3 PG-TO220-3 Q67040-S4395 11N60C3 SPI11N60C3 PG-TO262-3 Q67042-S4403 , W °C V/ns 2005-09-21 SPP11N60C3 SPI11N60C3, SPA11N60C3 Maximum Ratings Parameter , 2005-09-21 SPP11N60C3 SPI11N60C3, SPA11N60C3 Electrical Characteristics Parameter Symbol , SPP11N60C3 SPI11N60C3, SPA11N60C3 Electrical Characteristics Symbol Parameter Conditions Values Infineon Technologies
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to220 pcb footprint TO220 HEATSINK DATASHEET to262 pcb footprint SMD TRANSISTOR MARKING code TC TRANSISTOR SMD MARKING CODE ag
Abstract: Preliminary data SPP11N60C3, SPB11N60C3 SPI11N60C3, SPA11N60C3 Cool MOSTM Power Transistor , -3-31 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 Type SPP11N60C3 SPB11N60C3 SPI11N60C3 SPA11N60C3 Maximum , 2002-07-25 Preliminary data 1 Power dissipation Ptot = f (TC ) SPP11N60C3 2 Power dissiaption FullPAK , ) parameter : ID = 7 A, VGS = 10 V 2.1 SPP11N60C3 1.8 4V 4.5V 5V 5.5V 6V R DS(on) RDS(on , pulsed 16 SPP11N60C3 A 25°C V 32 12 28 VGS ID 24 20 16 12 10 0,2 VDS max Infineon Technologies
Original
Abstract: Preliminary data SPP11N60C3, SPB11N60C3 SPI11N60C3, SPA11N60C3 Cool MOSTM Power Transistor , Package Ordering Code Marking SPP11N60C3 P-TO220-3-1 Q67040-S4395 11N60C3 SPB11N60C3 , ) SPP11N60C3 35 140 W W 120 110 25 P tot Ptot 100 90 20 80 70 15 60 50 , = 10 V 2.1 2 SPP11N60C3 1.8 4.5V 5V 6V 5.5V 1.6 RDS(on) R DS(on , : tp = 10 us parameter: ID = 11 A pulsed 40 16 A SPP11N60C3 V 25°C 32 12 24 Infineon Technologies
Original
diode marking 1200
Abstract: dissipation 2 Power dissipation FullPAK Ptot = f (TC) Ptot = f (TC) 140 SPP11N60C3 35 W , 6V 5.5V 1.6 RDS(on) RDS(on) SPP11N60C3 1.4 1.6 1.4 1.2 1.2 1 0.8 1 , Gate) parameter: ID = 11 A pulsed parameter: tp = 10 us 40 16 A SPP11N60C3 V 25 , parameter: Tj , tp = 10 us par.: VDS =380V, VGS=0/+13V, RG=6.8 10 2 SPP11N60C3 70 ns A 60 , )DSS = f (Tj) par.: ID = 5.5 A, VDD = 50 V 350 720 SPP11N60C3 V V(BR)DSS mJ EAS Infineon Technologies
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4016A PG-TO263
Abstract: (TC) 140 SPP11N60C3 2 Power dissipation FullPAK Ptot = f (TC) 35 W 120 110 100 W 25 , 10 V 2.1 SPP11N60C3 4V 4.5V 5V 5.5V 6V 1.8 1.6 1.4 1.2 1.4 1.2 RDS(on) RDS(on , (Q Gate) parameter: ID = 11 A pulsed 16 SPP11N60C3 A 32 25°C V 12 VGS 28 ID , 10 2 SPP11N60C3 14 Typ. switching time t = f (ID), inductive load, Tj =125°C par.: VDS =380V, VGS , energy EAS = f (Tj) par.: ID = 5.5 A, VDD = 50 V 350 720 SPP11N60C3 22 Drain-source breakdown Infineon Technologies
Original
Abstract: (TC) SPP11N60C3 35 140 W W 120 110 25 Ptot Ptot 100 90 20 80 70 , SPP11N60C3 â"¦ â"¦ 1.8 4.5V 5V 6V 5.5V 1.6 RDS(on) RDS(on) 4V 1.4 1.6 1.4 , A SPP11N60C3 V 25°C 32 12 24 VGS ID 28 150°C 20 0,2 VDS max 10 , SPP11N60C3 70 ns A 60 td(off) 55 50 10 1 t IF 45 40 35 30 25 10 0 Tj = 25 , Drain-source breakdown voltage EAS = f (Tj) V(BR)DSS = f (Tj) par.: ID = 5.5 A, VDD = 50 V SPP11N60C3 Infineon Technologies
Original
Abstract: Preliminary data SPP11N60C3, SPB11N60C3 SPI11N60C3, SPA11N60C3 Cool MOSâ"¢=Power Transistor , 3 P-TO220-3-31 Type SPP11N60C3 Package P-TO220-3-1 Ordering Code Q67040-S4395 , dissiaption FullPAK Ptot = f (TC ) Ptot = f (TC ) SPP11N60C3 35 140 W W 120 110 25 , = 10 V 2.1 2 SPP11N60C3 â"¦ â"¦ 1.8 4.5V 5V 6V 5.5V 1.6 RDS(on) RDS , SPP11N60C3 V SPP11N60C3 A 0,2 VDS max 10 10 1 0,8 VDS max IF VGS 12 8 6 Infineon Technologies
Original
Abstract: SPB11N60C3 SPB11N60C2 SPB11N60S5 SPP11N60C3 SPP11N60C2 SPP11N60S5 SPA11N60C3 SPA11N60C2 , 10 12 Id [A] Figure 5 Switching Energy Losses vs. Drain Current (SPP11N60C3, SDP06S60 , Losses vs. Gate Resistor (SPP11N60C3, SDP06S60, Id = 11 A, Vds = 380 V, TJ = 125°C) Application Note , Energy Losses vs. Drain-Source Voltage (SPP11N60C3, SDP06S60, Id = 11 A, Rgate = 6.8 , TJ = 125 , . Gate-Source Voltage (SPP11N60C3, SDP06S60, Id = 11 A, Rgate = 6.8 , Vds = 380 V, TJ = 125°C) Application Infineon Technologies
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SPN04N60C2 smps* ZVT SPU01N60S5 spp20n60c3 spp20n60 SPN04N60S5 MOS-03 2002-S
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