SPI07N60C3 |
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Infineon Technologies
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Cool MOS Power Transistor |
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Original |
PDF
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SPI07N60C3 |
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Infineon Technologies
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Cool MOS Power Transistor |
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Original |
PDF
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SPI07N60C3 |
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Unknown
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Cool MOS Power Amp., 650V 7.3A 83W, MOS-FET N-Channel enhanced |
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Original |
PDF
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SPI07N60C3HKSA1 |
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Infineon Technologies
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 650V 7.3A TO-262 |
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Original |
PDF
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SPI07N60C3 SMD |
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Infineon Technologies
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CoolMOS Power MOSFET, 600V, TO-262, RDSon=0.60 ?, 7.3A |
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Original |
PDF
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SPI07N60C3XKSA1 |
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Infineon Technologies
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 600V 7.3A TO-262 |
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Original |
PDF
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SPI07N60S5 |
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Infineon Technologies
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N-Channel MOSFETs (>500V - 900V); Package: PG-TO262-3; VDS (max): 600.0 V; Package: I2PAK (TO-262); RDS(ON) @ TJ=25°C VGS=10: 600.0 mOhm; ID(max) @ TC=25°C: 7.3 A; IDpuls (max): 14.6 A; |
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Original |
PDF
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SPI07N60S5 |
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Infineon Technologies
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CoolMOS Power MOSFET, 600V, TO-262, RDSon=0.60 ?, 7.3A |
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Original |
PDF
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SPI07N60S5 |
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Unknown
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Metal oxide N-channel FET, Enhancement Type |
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Original |
PDF
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SPI07N60S5HKSA1 |
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Infineon Technologies
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 600V 7.3A TO-262 |
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Original |
PDF
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SPI07N65C3 |
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Infineon Technologies
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N-Channel MOSFETs (>500V - 900V); Package: PG-TO262-3; VDS (max): 650.0 V; Package: I2PAK (TO-262); RDS(ON) @ TJ=25°C VGS=10: 600.0 mOhm; ID(max) @ TC=25°C: 7.3 A; IDpuls (max): 21.9 A; |
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Original |
PDF
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SPI07N65C3 |
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Infineon Technologies
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Cool MOS Power Transistor |
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Original |
PDF
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SPI07N65C3HKSA1 |
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Infineon Technologies
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 650V 7.3A TO-262 |
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Original |
PDF
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SPI08N50C3 |
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Infineon Technologies
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N-Channel MOSFETs (>500V - 900V); Package: PG-TO262-3; VDS (max): 500.0 V; Package: I2PAK (TO-262); RDS(ON) @ TJ=25°C VGS=10: 650.0 mOhm; ID(max) @ TC=25°C: 8.0 A; IDpuls (max): 22.8 A; |
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Original |
PDF
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SPI08N50C3 |
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Infineon Technologies
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Cool MOS Power Transistor |
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Original |
PDF
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SPI08N50C3HKSA1 |
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Infineon Technologies
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 500V 7.6A TO-262 |
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Original |
PDF
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SPI08N50C3XK |
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Infineon Technologies
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N-CHANNEL POWER MOSFET |
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Original |
PDF
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SPI08N50C3XKSA1 |
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Infineon Technologies
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 560V 7.6A TO-262 |
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Original |
PDF
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SPI08N80C3 |
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Infineon Technologies
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N-Channel MOSFETs (>500V - 900V); Package: PG-TO262-3; VDS (max): 800.0 V; Package: I2PAK (TO-262); RDS(ON) @ TJ=25°C VGS=10: 650.0 mOhm; ID(max) @ TC=25°C: 8.0 A; IDpuls (max): 24.0 A; |
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Original |
PDF
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SPI08N80C3 |
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Infineon Technologies
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for lowest Conduction Losses & fastest SwitchingPlease note: Infineon has changed the CoolMOS 800V C2 marking to C3. 800V C2 ... |
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