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| Catalog Datasheet Results | Type | Document Tags |
| Abstract: 3A 0.7ms at 3A BU506D BU506D TO-220AB 3A 1500V 700V 5V at 3A 0.7fiS at 3A BU706 BU706 SOT-93A 3A 1500V 700V 5 V at 3A 0.7us at 3A BU706D BU706D SOT-93A 3A 1500V 700V 5V at 3A 0.7 ns at 3A BU603 BU603 TO-220AB SA 1350V 550V 2Vat 2A 0.7/iS at 2A BU903 BU903 SOT-93 6A 1350V 550V 2Vat 3.2A 0.7ix3 at 3.2A BUV89 BUV89 SOT-93A 8A 1200V 800V 1Vat4.5A 0.5/iS at 4.5A BU508A BU508A SOT-93A 8A 1500V 700V 1Vat4.5A 0.7¡is at 4.5A BU508D BU508D SOT-93A 8A 1500V 700V ... | OCR Scan |
1 pages, |
BU505 BU2508A BF870 BF458-BF459 BF457 3A 250V BU706 BU706D BU903 BUV89 BU603 pnp transistor 800v PNP 300V BU508DF pnp 1200V 2A T-33- BU505 T-33- abstract |
| Abstract: 0.7 ps MECHANICAL DATA Fig. 1 SOT93A. BU705 BU705 BU705D BU705D Pinning 1 = base 2 = collector 3 = , N AMER PHILIPS/DISCRETE tiTE D â- 1^53=131 0G2fl5fl2 GM7 I BU705 BU705 BU705D BU705D A IAPX SILICON DIFFUSED POWER TRANSISTOR High-voltage, high-speed switching, glass passivateci npn power transistor in a SOT93A envelope, intended for use in horizontal deflection circuits of television receivers. The BU705D BU705D has an integrated efficiency diode QUICK REFERENCE DATA Collector-emitter voltage peak value; VßE = 0 open base ... | OCR Scan |
5 pages, |
V i Curve Tracer BU705D BU705 BU705 abstract |
| Abstract: 75 W Fall time inductive load tf typ. 0.7 ¡is MECHANICAL DATA Fig. 1 SOT93A. BU705 BU705 4,3 18,2 , I [ PHILIPS INTERNATIONAL MSE D E3 711QfiHt. 00300^3 3 E3PHIN BU705 BU705 A BU705D BU705D T-33-P T-33-P SILICON DIFFUSED POWER TRANSISTOR High-voltage, high-speed switching, glass passivateci npn power transistor in a SOT93A envelope, intended for use in horizontal deflection circuits of television receivers. The BU705D BU705D has an integrated efficiency diode QUICK REFERENCE DATA Collector-emitter voltage peak value; Vgg = ... | OCR Scan |
5 pages, |
BU705D BU705 T-33-P BU705 abstract |
| Abstract: 0.7 US MECHANICAL DATA Fig. 1 SOT93A. BU705 BU705 BU705D BU705D Pinning 1 = base 2 = collector 3 = , N AMER PHILIPS/DISCRETE blE ® â- bbS3R31 0020202 GM7 "APX BU705 BU705 BU705D BU705D Jl SILICON DIFFUSED POWER TRANSISTOR High-voltage, high-speed switching, glass passivateci npn power transistor in a SOT93A envelope, intended for use in horizontal deflection circuits of television receivers. The BU705D BU705D has an integrated efficiency diode QUICK REFERENCE DATA Collector-emitter voltage peak value; Vߣ = 0 VCESM max. 1500 V ... | OCR Scan |
5 pages, |
BU705D BU705 BU705 abstract |
| Abstract: inductive load tf typ. 0.7 flS MECHANICAL DATA Fig. 1 SOT93A. BU705 BU705 Pinning 1 = base 2 = collector 3 , Philips Semiconductors Product specification Silicon diffused power transistor BU705 BU705 High-voltage, high-speed switching, glass passivateci npn power transistor in a SOT93A envelope, intended for use in horizontal deflection circuits of television receivers. QUICK REFERENCE DATA Collector-emitter voltage peak value; Vgg = 0 VCESM max. 1500 V open base vCEO max. 700 V Collector-emitter ... | OCR Scan |
5 pages, |
T200I bu705 philips semiconductor BU705 specification of curve tracer BU705 abstract |
| Abstract: 75 w Fall time inductive load tf typ. 0.7 ¡is MECHANICAL DATA Fig. 1 SOT93A. BU705 BU705 BU705D BU705D , 1 [ PHILIPS INTERNATIONAL MSE D E3 711DÃ-Hb ODBGÃ-TB 3 E3PHIN BU705 BU705 A BU705D BU705D 7-33 ~ß SILICON DIFFUSED POWER TRANSISTOR High-voltage, high-speed switching, glass passivateci npn power transistor in a SOT93A envelope, intended for use in horizontal deflection circuits of television receivers. The BU705D BU705D has an integrated efficiency diode QUICK REFERENCE DATA_ Collector-emitter voltage peak value; vßg ... | OCR Scan |
5 pages, |
BU705D BU705 BU705 abstract |
| Abstract: mechanical data Fig. 1 SOT93A. BU508A BU508A 1 = base 2 = collector 3 = emitter & 4,3 BU508D BU508D 18,2 16,1 , N AMER PHILIPS/DISCRETE blE D â- D02A2b4 DEI BU508A BU508A BU508D BU508D SILICON DIFFUSED POWER TRANSISTOR High-voltage, high-speed switching npn transistor in SOT93A envelope intended for use in horizontal deflection circuits of colour television receivers. The BU508D BU508D has an integrated efficiency diode. quick reference data Collector-emitter voltage peak value; V/gg = 0 VCESM max. 1500 V Collector-emitter voltage ... | OCR Scan |
6 pages, |
transistor Bu508A BU508D BU508A BU508A abstract |
| Abstract: DATA Fig. 1 SOT93A. BU508A BU508A 1 = base 2 = collector 3 = emitter BU508D BU508D Collector connected to , Philips Semiconductors Product specification Silicon diffused power transistors BU508A BU508A; BU508D BU508D High-voltage, high-speed switching npn transistor in SOT93A envelope intended for use in horizontal deflection circuits of colour television receivers. The BU508D BU508D has an integrated efficiency diode. QUICK REFERENCE DATA Collector-emitter voltage peak value; Vbe = 0 VCESM max. 1500 V Collector-emitter voltage (open ... | OCR Scan |
11 pages, |
BY22B bu50ba diode BY223 BU508D BU508A BY223 BU508A abstract |
| Abstract: data Fig. 1 SOT93A. BU508A BU508A BU508D BU508D 1 = base 2 = collector 3 = emitter Collector connected to , Philips Semiconductors Product specification Silicon diffused power transistors BU508A BU508A; BU508D BU508D High-voltage, high-speed switching npn transistor in SOT93A envelope intended for use in horizontal deflection circuits of colour television receivers. The BU508D BU508D has an integrated efficiency diode. quick reference data Collector-emitter voltage peak value; VgE = 0 VCESM max. 1500 V Collector-emitter voltage (open ... | OCR Scan |
11 pages, |
transistor BU508D BU508A BU508D transistor BU508D diode BY223 bu50ba BY223 BU508A abstract |
| Abstract: ptot max. 100 W Fall time; inductive load tf typ. 0.7 //s MECHANICAL DATA Fig. 1 SOT93A. Dimensions ... | OCR Scan |
6 pages, |
U706 BU706D BU706 DD262T4 DD262T4 abstract |