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SOT-93A

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Abstract: 1500V 700V 5V at 3A BU 706 SOT-93A 3A 1500V 700V 5 V a t 3A BU 706D SOT-93A , /is at 2A BU 903 SOT-93 6A 1350V 550V 2V at 3.2A BUV89 SOT-93A 8A 1200V 800V 1 V a t4 .5 A BU508A SOT-93A 8A 1500V 700V 1V at 4.5A BU 508D SOT-93A -
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S3131 T-33- BU508AF BUX88
Abstract: Outline TO-220AB TO-220AB TO-220AB SOT-93A SOT-93A TO-22ÛAB SOT-199 SOT-93 S0 T -9 3 A SOT-93A SOT-93A -
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BU2506DF 02xs 1500v 5A 800V BU508 t199 BUT12 BUT12A BUI708X BUV98V BUV298AV BU505
Abstract: 1500V 700V 5V at 3A 0.7ms at 3A BU506D TO-220AB 3A 1500V 700V 5V at 3A 0.7fiS at 3A BU706 SOT-93A 3A 1500V 700V 5 V at 3A 0.7us at 3A BU706D SOT-93A 3A 1500V 700V 5V at 3A 0.7 ns at 3A BU603 TO-220AB SA 1350V 550V 2Vat 2A 0.7/iS at 2A BU903 SOT-93 6A 1350V 550V 2Vat 3.2A 0.7ix3 at 3.2A BUV89 SOT-93A 8A 1200V 800V 1Vat4.5A 0.5/iS at 4.5A BU508A SOT-93A 8A 1500V 700V 1Vat4.5A 0.7¡is at 4.5A BU508D SOT-93A -
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BU506 BU508DF BU2508A BF457 800V PNP pnp 1500v 8a BU508AF PHILIPS SEMICONDUCTOR pnp 1200V 2A high voltage pnp transistor 700v 250V 100MA NPN BF469 BF471 BF470
Abstract: -220AB SOT186 SOT199 SOT199 SOT199 TO-220AB TO-220AB SOT 199 SOT199 SOT93A SOT93A 8 8 8 15 15 0.5 0.5 2 2 3 4 -
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BUT11AX BU2506DX TO-220AB 220ab sot199 BUX86P BUX84F BUX84 BUW84 BUT211X BUT11F
Abstract: ptot max. 75 W Fall time inductive load tf typ. 0.7 ¡is MECHANICAL DATA Fig. 1 SOT93A. BU705 4 , I [ PHILIPS INTERNATIONAL MSE D E3 711QfiHt. 00300^3 3 E3PHIN BU705 A BU705D T-33-P SILICON DIFFUSED POWER TRANSISTOR High-voltage, high-speed switching, glass passivateci npn power transistor in a SOT93A envelope, intended for use in horizontal deflection circuits of television receivers. The BU705D has an integrated efficiency diode QUICK REFERENCE DATA Collector-emitter voltage peak -
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J295
Abstract: mechanical data Fig. 1 SOT93A. BU508A 1 = base 2 = collector 3 = emitter & 4,3 BU508D 18,2 16,1 , N AMER PHILIPS/DISCRETE blE D â  D02A2b4 DEI BU508A BU508D SILICON DIFFUSED POWER TRANSISTOR High-voltage, high-speed switching npn transistor in SOT93A envelope intended for use in horizontal deflection circuits of colour television receivers. The BU508D has an integrated efficiency diode. quick reference data Collector-emitter voltage peak value; V/gg = 0 VCESM max. 1500 V Collector-emitter voltage -
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transistor d 1991 ar philips bu508a T1185 transistor Bu508A D02A2 7Z243S4 7Z2436S 53R31
Abstract: ptot max. 75 w Fall time inductive load tf typ. 0.7 ¡is MECHANICAL DATA Fig. 1 SOT93A. BU705 , 1 [ PHILIPS INTERNATIONAL MSE D E3 711DÃHb ODBGÃTB 3 E3PHIN BU705 A BU705D 7-33 ~à SILICON DIFFUSED POWER TRANSISTOR High-voltage, high-speed switching, glass passivateci npn power transistor in a SOT93A envelope, intended for use in horizontal deflection circuits of television receivers. The BU705D has an integrated efficiency diode QUICK REFERENCE DATA_ Collector-emitter voltage peak -
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SOT93A 7Z9S744 7Z59204 7Z92106 7Z92W8 7Z9210 7Z81016
Abstract: inductive load tf typ. 0.7 flS MECHANICAL DATA Fig. 1 SOT93A. BU705 Pinning 1 = base 2 = collector 3 , Philips Semiconductors Product specification Silicon diffused power transistor BU705 High-voltage, high-speed switching, glass passivateci npn power transistor in a SOT93A envelope, intended for use in horizontal deflection circuits of television receivers. QUICK REFERENCE DATA Collector-emitter voltage peak value; Vgg = 0 VCESM max. 1500 V open base vCEO max. 700 V Collector-emitter -
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SILICON DIFFUSED POWER TRANSISTOR T200I specification of curve tracer 700 v power transistor bu705 philips semiconductor 9S744 0D77M62 7Z810
Abstract: A 4 A 1.8 V 75 W 0.7 ps MECHANICAL DATA Fig. 1 SOT93A. BU705 BU705D Pinning 1 = base 2 = , N AMER PHILIPS/DISCRETE tiTE D â  1^53=131 0G2fl5fl2 GM7 I BU705 BU705D A IAPX SILICON DIFFUSED POWER TRANSISTOR High-voltage, high-speed switching, glass passivateci npn power transistor in a SOT93A envelope, intended for use in horizontal deflection circuits of television receivers. The BU705D has an integrated efficiency diode QUICK REFERENCE DATA Collector-emitter voltage peak value; VÃE = -
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V i Curve Tracer 7ZB10T6
Abstract: inductive load tf typ. 0.7 US MECHANICAL DATA Fig. 1 SOT93A. BU705 BU705D Pinning 1 = base 2 = , N AMER PHILIPS/DISCRETE blE ® â  bbS3R31 0020202 GM7 "APX BU705 BU705D Jl SILICON DIFFUSED POWER TRANSISTOR High-voltage, high-speed switching, glass passivateci npn power transistor in a SOT93A envelope, intended for use in horizontal deflection circuits of television receivers. The BU705D has an integrated efficiency diode QUICK REFERENCE DATA Collector-emitter voltage peak value; Vã = 0 VCESM max -
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S3R31 7Z92109
Abstract: typ. 0.7 jus MECHANICAL DATA Fig. 1 SOT93A. BU508A 1 = base 2 = collector 3 = emitter BU508D , Philips Semiconductors Product specification Silicon diffused power transistors BU508A; BU508D High-voltage, high-speed switching npn transistor in SOT93A envelope intended for use in horizontal deflection circuits of colour television receivers. The BU508D has an integrated efficiency diode. QUICK REFERENCE DATA Collector-emitter voltage peak value; Vbe = 0 VCESM max. 1500 V -
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BY223 diode BY223 transistor BU508D BY22B bu50ba BU508D transistor JZKJ44 DQ774 G077472
Abstract: . 0.7 jus mechanical data Fig. 1 SOT93A. BU508A BU508D 1 = base 2 = collector 3 = emitter , Philips Semiconductors Product specification Silicon diffused power transistors BU508A; BU508D High-voltage, high-speed switching npn transistor in SOT93A envelope intended for use in horizontal deflection circuits of colour television receivers. The BU508D has an integrated efficiency diode. quick reference data Collector-emitter voltage peak value; VgE = 0 VCESM max. 1500 V -
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dd77473 BU-508A DD774 7110A2L DD77473
Abstract: . 15 A ptot max. 125 W tf typ. 0.5 iis MECHANICAL DATA Fig. 1 SOT93A. c R 2 max Pinning: 1 = -
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transistor AC 307 PHILIPS discrete LED transistor NES transistor y k 425 TVP10 7Z72196 S3T31
Abstract: tf typ. 0.5 V s mechanical data Fig. 1 SOT93A. R 2 max X -15.2 max - Pinning: 1 = base 2 = -
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on 222 transistor transistor 222 G0777M 711D6E D077752
Abstract: N AUER PHILIPS/DISCRETE b lE bb53c l31 DDEflEbM DEI BU508A BU508D y v I> SILICON DIFFUSED POWER TRANSISTOR High-voltage, high-speed switching npn transistor in SOT93A envelope intended for use in horizontal deflection circuits o f colour television receivers. The BU508D has an integrated efficiency diode. QUICK REFERENCE D ATA Collector-emitter voltage peak value; V g F = 0 V CESM max. 1500 V Collector-emitter voltage (open base) v CEO max. 700 V 8 A -
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7Z88402 7Z8S40-
Abstract: â'¢cm max. 15 A ptot max. 125 W tf typ. 0.5 lis MECHANICAL DATA Fig. 1 SOT93A. R 2 max Pinning -
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transistor IC BT 134 7Z7219B
Abstract: Dimensions in mm Fig. 1 SOT93A. I-15-i BU706 4,3 18,2 16,1 BU706D Pinning: 1 = base 2 = -
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u706 D0262T4 I--15- I-0-10
Abstract: . max. typ. 100 W 0.7 ps M ECH ANICAL D A T A A A A V Dimensions in mm Fig. 1 SOT93A. -
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Abstract: ptot tf max. typ. 100 W 0.7 ps MECHANICAL DATA Dimensions in mm Fig. 1 SOT93A. -â'"15-1 c -
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D77MRM
Abstract: N AMER PHILIPS/DISCRETE t'E D .l ^ 5 3 ^ 3 1 QQ2fl2fl2 047 I IAPX BU705 BU705D J l SILICON DIFFUSED POWER TRANSISTOR High-voltage, high-speed switching, glass passivated npn power transistor in a SOT93A envelope, intended for use in horizontal deflection circuits of television receivers. The BU705D has an integrated efficiency diode QUICK REFERENCE DATA Collector-emitter voltage peak value; VgE = 0 open base V CESM v CEO max. max. 1500 V 700 V Collector-emitter -
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