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BB187,315 NXP Semiconductors DIODE VARACTOR DIODE,SINGLE,SOD-523, Variable Capacitance Diode ri Buy
BB187,335 NXP Semiconductors DIODE VARACTOR DIODE,SINGLE,SOD-523, Variable Capacitance Diode ri Buy
BB181,335 NXP Semiconductors DIODE VARACTOR DIODE,SINGLE,SOD-523, Variable Capacitance Diode ri Buy

SOD-23

Catalog Datasheet Results Type PDF Document Tags
Abstract: BAW56/BAV70/BAV99 BAW56/BAV70/BAV99 Pb RoHS COMPLIANCE 225mW Surface Mount Switching Diode SOD-23 Features . Fast switching device(TRR ... Original
datasheet

2 pages,
158.81 Kb

sod diode marking sod23 DIODE sod 23 SOD23 SOD 23 SOD-23 BAW56/BAV70/BAV99 BAW56/BAV70/BAV99 abstract
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Abstract: 0mW SURFACE MOUNT SILICON ZENER DIODES 2.4V~51V SOD-23 PACKAGE FEATURES · Planar Die construction · 410mW Power Dissipation · Zener Voltages from 2.4~51V · Ideally Suited for Automated Assembly Processes .028(0.7) .019(0.5) BZT52-C2V4 BZT52-C2V4 THRU BZT52-C51 BZT52-C51 Pb Free Product SOD-323 SOD-23 .154(3.90 , 0mW SURFACE MOUNT SILICON ZENER DIODES 2.4V~51V SOD-23 PACKAGE BZT52-C2V4 BZT52-C2V4 THRU BZT52-C51 BZT52-C51 Pb Free , SURFACE MOUNT SILICON ZENER DIODES 2.4V~51V SOD-23 PACKAGE BZT52-C2V4 BZT52-C2V4 THRU BZT52-C51 BZT52-C51 Pb Free Product ... Original
datasheet

4 pages,
829.16 Kb

zener marking code V SOD123 w1 marking SOD 123 SOD23 SOD 23 sod-23 datasheet abstract
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Abstract: DIODA PRZEL4CZNIKOWA * BA152P BA152P SWW 1156-121 Dioda krzemowa epiplanarna jest przeznaczona glównie do pracy jako dioda przel^cznikowa w zakresie UHF w odbiornikach telewizyjnych. 13tf max2,5 maxM max . o,2m\ cs a rn mL min 1,5 mif¡¡$\^ 1,9-0,8 K VÌÉ~1 0,8 max3J 1,8 Obudowa plastykowa SOD23 (CE37) DANE TECHNICZNE Dopuszczalne wartosci parametrów eksploatacyjnych Szczytowe napiçcie wsteczne Prqd przewodzenia Temperatura zl^cza Zakres temperatury skladowania URM 15 V 1F 100 mA , ti 373 ... OCR Scan
datasheet

2 pages,
150.05 Kb

BA152P dioda MV 5 CE37 dioda sod-23 BA152P abstract
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Abstract: DIODA PRZEL4CZNIKOWA 2-74/2 * BA182 BA182 Dioda krzemowa epiplanarna charakteryzuje siç malq opornosciq w kierunku przewodzenia. Jest ona przezna-czona do pracy glównie jako dioda przel^cznikowa w glo-wicy UHF w odbiornikaeh telewizyjnych. Obudowa plastykowa SOD23 (CE37) DANE TECHNICZNE Dopuszczalne wartosci parametrów eksploatacyjnych Szczytowe napiçcie wsteczne' Prqd przewodzenia Temperatura zl^cza Zakres temperatury skladowania Urm 35 V If 100 mA t¡ 373 K (100°C) t,tg 218.373 K(-55. +100°C ... OCR Scan
datasheet

2 pages,
148.55 Kb

BA182 45tamb CE37 dioda SOD23 SOD-23 BA182 abstract
datasheet frame
Abstract: BAV70 BAV70 SWITCHING DIODE PRODUCT SUMMARY SOT-23 SOD-23 Plastic-Encapsulate Diodes FEATURES Fast Switching Speed For General Purpose Switching Applications High Conductance BAW56 BAW56 Marking: A1 BAV70 BAV70 Marking: A4 BAV99 BAV99 Marking: A7 Pb-free; RoHS-compliant MAXIMUM RATINGS @TA=25°C Parameter Symbol Limits Unit Reverse voltage VR 70 V Forward Current IF 200 mA IFM(surge) 500 mA PD 225 mW RJA 556 /W TJ 150 ... Original
datasheet

3 pages,
156.22 Kb

SOD23 BAV70 bav70 transistor BAV99 BAW56 A4 marking diode sod-23 datasheet MARKING A4 transistor SILICON SWITCHING DIODE diode marking a4 marking A1 marking A4 marking a7 SOD 23 BAV70 abstract
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Abstract: D1 20 5 20 23 29 36 25 31 38 45 4 1.4 BAI 82 Band switching in v.h.f. tv tuners SOD-23 M 35 0.1 , £2 BA280 BA280 Schottky barrier u.h f. mixer diode SOD-23 M 4 0.25 - 1.0 0 - 8A379 8A379 For controlled , tuners SOD-23 M 28 0.05 4 5.6 25 4.5 6 BB110B BB110B BB110G BB110G Silicon Iplanar variable capacitance diodes for tuning in band II f jti. and for r.f. and! interstage circuits SOD-23 M 30 0.02 27 29 31 33 3 2.65 typ. *BB205B BB205B •BB205G BB205G Intended for uji.f. tuners Intended for v.h.f. tuners SOD-23 M 28 0.05 1.9 ... OCR Scan
datasheet

16 pages,
440.55 Kb

DIODE BA244 BA182 BA243 diode oa202 BA244 SOD-17 SOD-52 DIODE BA243 8A102 j4 DIODE sod 23 BA102B diode ba280 BA379 BB205B BB205 BA314 BA316 BA314 abstract
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Abstract: WARIKAP * BB105A BB105A, BB105G BB105G 13-74/2 SWW 1156-151 Diody krzemowe epiplanarne o zmiennej pojemnosci s^ przeznaczone do pracy w ukladzie glowicy UHF w od-biornikach telewizyjnych i radiowych. Parametry dynamiczne; tamb = 298 K (25°C) Obudowa plastykowa SOD23(CE37) DANE TECHNICZNE Dopuszczalne wartosci parametrów eksploatacyjnych Szczytowe napiçcie wsteczne URM Napiçcie wsteczne UR Prgd przewodzenia If Temperatura zl^cza tamb Zakres temperatury skiadowania tstg 30 V 28 V 20 mA 373 K (100°C) 218.373 K ... OCR Scan
datasheet

2 pages,
175.04 Kb

ce37 diody bb105g BB105A WARIKAP BB105 BB105G BB105A abstract
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Abstract: DIODY IMPULSOWE * BAP794 BAP794, BAP794A BAP794A, BAP795 BAP795, BAP795A BAP795A e-74/2 SWW 1156-131 Diody krzemowe epiplanarne sq przeznaczone glöwnie do stosowania w bardzo szybkich ukladach przel^czajqcych oraz jako diody ogölnego zastosowania, 13tf max 2,5 moXi TT Ml max 4,1. OftW CJ A EC 7jm mm 1,5 minify 1,9-0,8 ' " H K o 0,8 max3,1 Obudowa plastykowa SOD23 (CE37) Dioda BAP794 BAP794 Parametry statyczne; tamb = 298 K (25°C) min. typ. maks. Napi^cie przewodzenia przy It =- 30 mA UF Napi^cie przebicia przy ... OCR Scan
datasheet

3 pages,
215.31 Kb

sod-23 BAP794 dioda bap795 DIODA ce37 BAP794A BAP795A BAP795 BAP794 abstract
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Abstract: TRL T R L 13 TRL T R L 13 SOT-143 Orientation H J SOD-23 and SOT-143 Tape Dimensions SOD-80C ... OCR Scan
datasheet

2 pages,
203.09 Kb

BBY39 BBY31 175 sot-23 SOD-23 S2p SOT-23 s1P SOT23 datasheet abstract
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Abstract: 3:25 1 1 < 0,6 0,6 < 0,8 Q oti: Cioè at Vri : Vr2 V f MHz rs Case n SOD23/1 SOD23/2 BB109 BB109 BB205A BB205A , 5,0-6,0 3 :25 1 0,7 < 0,8 SOD23/2 BB205B BB205B 4,3-6,0 3 :2 5 1 0,9 < 1,2 SOD23/2 BB205G BB205G KB 109G with capacity deviation ± 3% in voltage range = 1 .28 V. KB 205A.KB 205 , £t VR V 1 10 20 30 f MHz 1 1 1 1 AC max. % at vR V f MHz «S max n 4 Case Analog KB113 KB113 SOD23/3 , MHz 1 1 1 1 1 < < < < < rs n 0,4 0,4 0,4 0,4 0,4 SOD23/4 SOD23/4 SOD23/4 SOD23/4 SOD23/4 * > Case ... OCR Scan
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55 pages,
7901.68 Kb

kd503 KSY21 KT505 KT705 KY717 kf189 KT725-200 KD502 KUN10 KF517B KT725 KSY71 kt201 KT206-400 KT784 datasheet abstract
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Abstract: sod-23 SOD 23 BA178 BA178 Silizium-Epitaxial-Planar-Diode Silicon epitaxial planar diode Anwendungen: Bereichsumschaltung in VHF-Tunern Applications: Band selector in VHF-tuners Abmessungen in mm Dimensions in mm 2,4 0,2 rnf 24 - I--J 2 ... OCR Scan
datasheet

2 pages,
23.51 Kb

TUNER BA178 BA178 abstract
datasheet frame
Abstract: BB109 BB109 Silicon epitaxial planar capacitance variation diode Anwendungen: Abstimmschaltungen im VHF-Bereich Applications: FM-tuning circuits in VHF range Besondere Merkmale: • Großer Kapazitäts-Variationsbereich • Garantierte Toleranzen der Dioden eines Satzes untereinander Features: • High capacitance tuning range • Guaranted matching tolerances in a set from diode to diode Abmessungen in mm Dimensions In mm U, 2 r KATHODE f 2,5 1,2 ... OCR Scan
datasheet

2 pages,
39.64 Kb

DIODE WITH SOD CASE BB-109 bb109 characteristics BB109 BB109 abstract
datasheet frame
Abstract: BA182 BA182 Silizium-Epitaxial-Planar-Diode Silicon epitaxial planar diode Anwendungen: Bereichsumschaltung in VHF-Tunern Applications: Band selector in VHF-tuners Abmessungen in mm Dimensions in mm 2,4 0,2 KATHODE T 2,5 1,2 0,75 CATHODE \ Ç -12,5-»-I Kunststoffgehäuse Plastic Case SOD 23 Gewicht - Weight max. 0,1 g Absolute Grenzdaten Absolute maximum ratings Sperrspannung Reverse voltage Durchlaßstrom Forward current Sperrschichttemperatur Junction temperature Lagerungstemperaturberei ... OCR Scan
datasheet

2 pages,
39.66 Kb

SOD 23 tfk 4 BA182 datasheet abstract
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Abstract: Dioden Capacitance diodes Type Group Fig. Maximum ratings Characteristics Nr. VR CD(£/R = 3V) CD(i/R = 3V) CDat rs at tfR V CD(t/R = 25 V) CD (t/R = 30 V) PF V O V BA111 BA111 10 20 - - 45-65 2 0.5 2 BA121 BA121 10 30 - - 8-12 2 0.9 2 BA 124 50 10 30 - - 44-51 2 0.5 2 55 10 30 - - 49-56 2 0.5 2 60 10 30 - - 54-61 2 0.5 2 65 10 30 - - 59-66 2 0.5 2 BA 125 35 10 30 - - 29-36 2 0.5 2 40 10 30 - - 34-41 2 0.5 2 45 10 30 - - 39-46 2 0.5 2 50 10 30 - - 46-51 2 0.5 2 BB 104 gn 12 ... OCR Scan
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1 pages,
33.3 Kb

Din 5461 BA121 bl 565 BB205 g BA111 BB205 BB105 BB209 BB205 abstract
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