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ISL73096RHVX Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73096RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73128RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73127RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
TIL604HR2 Texas Instruments Photo Transistor, PHOTO TRANSISTOR DETECTOR visit Texas Instruments
LP395Z/LFT1 Texas Instruments Ultra Reliable Power Transistor 3-TO-92 visit Texas Instruments

SMD Transistor g15

Catalog Datasheet MFG & Type PDF Document Tags

SMD Transistor g15

Abstract: transistor SMD g15 MOSFET SMD Type MOS Field Effect Transistor 2SK1582 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 1 Possible to reduce the number of parts by omitting the bias resistor 0.55 +0.1 1.3-0.1 Not necessry to consider driving current because of its thgh input impedance. +0.1 2.4-0.1 Can be driven by Ics having a 5V single power supply. 2 +0.1 0.95-0.1 , =5.0V,VGS=0,f=1MHZ ID=10mA,VGS(on)=5.0V,RL=500 ,VDD=5.0V,RG=10 Marking Marking G15
Kexin
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SMD Transistor g15 transistor SMD g15 marking G15 MOSFET g15 SMD TRANSISTOR MARKING 28 g15 SMD

SMD Transistor g15

Abstract: transistor A25 SMD SPD06N80C3 CoolMOSTM Power Transistor Product Summary Features V DS 0.9 Q g,typ · Extreme dv/dt rated V R DS(on)max @ Tj = 25°C · New revolutionary high voltage technology 800 31 nC · High peak current capability · Qualified according to JEDEC1) for target , . - - 1.5 SMD version, device on PCB, minimal footprint - - 62 SMD version , - ns - 5 - µC - 18 - A V DD=400 V, V GS=0/10 V, I D=6 A, R G=15 ?
Infineon Technologies
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transistor A25 SMD smd diode S6 06n80c3 JESD22 PG-TO252-3 06N80C3

SMD Transistor g15

Abstract: transistor A25 SMD SPD06N80C3 CoolMOSTM Power Transistor Features · New revolutionary high voltage technology · Extreme dv/dt rated · High peak current capability · Qualified according to JEDEC1) for target , characteristics Thermal resistance, junction - case R thJC R thJA Thermal resistance, junction ambient SMD version, device on PCB, minimal footprint SMD version, device on PCB, 6 cm2 cooling area5) T sold reflow MSL1 1.5 , , f =1 MHz V GS=0 V, V DS=0 V to 480 V V DD=400 V, V GS=0/10 V, I D=6 A, R G=15 ? , T j= 25°C 69 25 15
Infineon Technologies
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Abstract: SPD06N80C3 CoolMOSTM Power Transistor Product Summary Features V DS 0.9 â"¦ Q g,typ â'¢ Extreme dv/dt rated V R DS(on)max @ Tj = 25°C â'¢ New revolutionary high voltage technology 800 31 nC â'¢ High peak current capability â'¢ Qualified according to , 1.5 SMD version, device on PCB, minimal footprint - - 62 SMD version, device on PCB , , I D=6 A, R G=15 ? , T j= 25°C ns Gate Charge Characteristics V DD=640 V, I D=6 A, V GS Infineon Technologies
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SPD06N80C3BT

smd transistor g28

Abstract: smd marking CODE G28 amplifier is manufactured on an advanced InGaP HBT (hetero-junction Bipolar Transistor) MMIC (microwave , CPL port ISO port to CPL port, Ven=Low -136.5 -150 -158 G-1 G-28 G-30 G-65 G-1.5 20 30 10:1 21 , .7. Baking of Populated Boards Some SMD packages and board materials are not able to withstand long duration , floor life exposures for SMD packages removed from the dry bags will be a function of the ambient environmental conditions. A safe, yet conservative, handling approach is to expose the SMD packages only up to
Avago Technologies
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smd transistor g28 smd marking CODE G28 TRANSISTOR SMD MARKING CODE TX TRANSISTOR SMD MARKING CODE G15 smd code G28 AVAGO PA LTE ACPM-5008-TR1 880-915MH AV02-2480EN

smd transistor g28

Abstract: transistor SMD g28 manufactured on an advanced InGaP HBT (hetero-junction Bipolar Transistor) MMIC (microwave monolithic , -158 G-1 G-28 G-30 G-65 G-1.5 3 Electrical Characteristics for WCDMA Mode (Cont.) Phase , °C and 90% relative humidity (RH) J-STD-033 p.7. Baking of Populated Boards Some SMD packages and , .8. Derating due to Factory Environmental Conditions Factory floor life exposures for SMD packages removed , , handling approach is to expose the SMD packages only up to the maximum time limits for each moisture
Avago Technologies
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transistor SMD g28 ACPM5

ACPM-5002

Abstract: ACPM-5002-TR1 amplifier is manufactured on an advanced InGaP HBT (hetero-junction Bipolar Transistor) MMIC (microwave , to CPL port, Ven=Low 20 0.25 G-2 G-2.5 G-1.5 G-12 G-24 20 30 10:1 dB dB dB dB dB deg deg VSWR dB dB , .7. Baking of Populated Boards Some SMD packages and board materials are not able to withstand long duration , floor life exposures for SMD packages removed from the dry bags will be a function of the ambient environmental conditions. A safe, yet conservative, handling approach is to expose the SMD packages only up to
Avago Technologies
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ACPM-5002-TR1 ACPM-5002 SMD Transistor g24 LTE chipsets gps glonass 1850-1910MH 1850-1915MH AV02-2477EN

smd transistor g28

Abstract: smd marking CODE G28 amplifier is manufactured on an advanced InGaP HBT (hetero-junction Bipolar Transistor) MMIC (microwave , -28 G-30 G-65 G-1.5 3 Electrical Characteristics for WCDMA Mode (Cont.) Phase Discontinuity low , °C and 90% relative humidity (RH) J-STD-033 p.7. Baking of Populated Boards Some SMD packages and , .8. Derating due to Factory Environmental Conditions Factory floor life exposures for SMD packages removed , , handling approach is to expose the SMD packages only up to the maximum time limits for each moisture
Avago Technologies
Original
A5008 acpm-5008 71-672 GPS 100 GPS Antenna

transistor SMD g28

Abstract: smd transistor g28 HBT (hetero-junction Bipolar Transistor) MMIC (microwave monolithic integrated circuit) technology , -43 -66 -136.5 -150 -158 G-1 G-28 G-30 G-65 G-1.5 570 90 20 155 30 5 dBc dBm/Hz , barrier bag is 12 months at , removal. Component temperatures shall be measured at the top center of the package body. Any SMD packages , exposures for SMD packages removed from the dry bags will be a function of the ambient environmental
Avago Technologies
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SMD Transistor g24

Abstract: advanced InGaP HBT (hetero-junction Bipolar Transistor) MMIC (microwave monolithic integrated circuit , 8.5 117 20 3.1 5 5 5 5 5 5 580 95 20 150 30 5 -137 -138 -145 G-2 G-1.5 G , barrier bag is 12 months at , removal. Component temperatures shall be measured at the top center of the package body. Any SMD packages , exposures for SMD packages removed from the dry bags will be a function of the ambient environmental
Avago Technologies
Original

AVAGO PA LTE

Abstract: 286DB manufactured on an advanced InGaP HBT (hetero-junction Bipolar Transistor) MMIC (microwave monolithic , -137 -138 -145 G-2 G-2.5 G-1.5 G-12 G-24 G-19 20 30 10:1 20 0.25 3 HSDPA Signal configuration , °C and 90% relative humidity (RH) J-STD-033 p.7. Baking of Populated Boards Some SMD packages and , .8. Derating due to Factory Environmental Conditions Factory floor life exposures for SMD packages removed , , handling approach is to expose the SMD packages only up to the maximum time limits for each moisture
Avago Technologies
Original
286DB

smd transistor rc1

Abstract: ACPM5 amplifier is manufactured on an advanced InGaP HBT (hetero-junction Bipolar Transistor) MMIC (microwave , CPL port ISO port to CPL port, Ven=Low 20 0.25 G-2 G-2.5 G-1.5 G-12 G-24 20 30 10:1 dB dB dB dB dB deg , °C and 90% relative humidity (RH) J-STD-033 p.7. Baking of Populated Boards Some SMD packages and , .8. Derating due to Factory Environmental Conditions Factory floor life exposures for SMD packages removed , , handling approach is to expose the SMD packages only up to the maximum time limits for each moisture
Avago Technologies
Original
smd transistor rc1 SMD MARKING CODE g25 SMD Transistor g25
Abstract: HBT (hetero-junction Bipolar Transistor) MMIC (microwave monolithic integrated circuit) technology , -65 G-1.5 dBc dBm/Hz dBm/Hz dBm/Hz dB dB dB dB dB 20 deg 30 deg VSWR 10:1 , barrier bag is 12 months at , removal. Component temperatures shall be measured at the top center of the package body. Any SMD packages , exposures for SMD packages removed from the dry bags will be a function of the ambient environmental Avago Technologies
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g25 SMD Transistor

Abstract: AVAGO PA LTE manufactured on an advanced InGaP HBT (hetero-junction Bipolar Transistor) MMIC (microwave monolithic , High Power Mode RF Out to CPL port ISO port to CPL port, Ven=Low 20 0.25 G-2 G-2.5 G-1.5 G-12 G-24 20 , SMD packages and board materials are not able to withstand long duration bakes at 125°C. Examples of , floor life exposures for SMD packages removed from the dry bags will be a function of the ambient environmental conditions. A safe, yet conservative, handling approach is to expose the SMD packages only up to
Avago Technologies
Original
g25 SMD Transistor LTE antenna

transistor smd G46

Abstract: .5 G0.6 G0.7 G1.0 G1.1 G1.2 G1.3 G1.4 G1.5 G1.6 G1.7 G2.0 G2.1 G2.2 G2.3 VCC-5V MM1 , .3 G0.4 G0.5 G0.6 G0.7 G1.0 G1.1 G1.2 G1.3 G1.4 G1.5 G1.6 G1.7 G2.0 G2.1 G2.2 G2.3 3.3V , A0 A1 G0.0 G0.1 G0.2 G0.3 G0.4 G0.5 G0.6 G0.7 G1.0 G1.1 G1.2 G1.3 G1.4 G1.5 G1.6 G1 , A0 A1 G0.0 G0.1 G0.2 G0.3 G0.4 G0.5 G0.6 G0.7 G1.0 G1.1 G1.2 G1.3 G1.4 G1.5 G1.6 G1 , .1 G1.2 G1.3 G1.4 G1.5 G1.6 G1.7 G2.0 G2.1 G2.2 G2.3 3.3V GND mikromedia for dsPIC33 2
MikroElektronika
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transistor smd G46 PIC18FJ PIC33 PIC24 PIC32

SKIIP 33 nec 125 t2

Abstract: skiip 613 gb 123 ct 107-842 CAP ELECTRO 470 UF 400V 108-390 SMD CAP 22UF 6.3V 105DEG 108-407 SMD CAP 33UF 6.3V 105DEG 108-413 SMD CAP 47UF 6.3V 105DEG 108-429 SMD CAP 100UF 6.3V 105DEG 108-441 SMD CAP 10UF 16V 105DEG 108-457 SMD CAP 22UF 16V 105DEG 108-463 SMD CAP 47UF 16V 105DEG 108-479 SMD CAP 4.7UF 25V 105DEG 108-485 SMD CAP 6.8UF 25V 105DEG 108-508 SMD CAP 22UF 25V 105DEG 108-558 SMD CAP 0.1UF 50V 105DEG 108-586 SMD CAP 0.68UF 50V 105DEG 108-592 SMD CAP 1.0UF 50V 105DEG 108-609 SMD CAP 2.2UF 50V 105DEG 108-615 SMD CAP 4.7UF 50V
RS Components
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SKIIP 33 nec 125 t2 skiip 613 gb 123 ct RBS 6302 ericsson SKIIP 513 gb 173 ct THERMISTOR ml TDK 150M pioneer PAL 010a 1500UF 3300UF 15000U 10000UF 15000UF 4700UF

88E1119R

Abstract: 88E1119 GND 25 3.3V 3.3V 25 IO18 G15 26 GND GND 26 GND GND 27 3.3V
Lattice Semiconductor
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88E1119R 88E1119 AA7 smd diode smd transistor M21 LFE3-35E-FN484CES MT41J64M16JT-15E RJ-45 DDR3-1333 DDR31333 LP2998-SO8 LP2998MAX/NOPB CLOCK5406D

LFE3-35E-FN484CES

Abstract: 88e1119r GND 25 3.3V 3.3V 25 IO18 G15 26 GND GND 26 GND GND 27 3.3V
Lattice Semiconductor
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npn transistor smd w19 smd transistor w17 AA19 smd diode diode C238 pDS4102-DL FTD2232 5406D DSC-100 DSC1123AE2-100 000MHZ-R-T 100MH

88E1119R

Abstract: 88E1119 GND B11 B12 A12 A13 E12 E13 C13 C14 D13 D14 A14 B14 F13 F14 A15 B15 GND 3.3V C15 GND D15 GND G15 GND
Lattice Semiconductor
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w18 smd transistor smd transistor F21 w21 transistor smd SOT W17 SMD transistor SMD Transistor Y13 SMD TRANSISTOR w18 FTD2232H 93LC56/SN MAX6817-EUT M25P64-VMF6TP

dinverter 768r

Abstract: G7D-412S CAPS ELECTRO 220UF 63V CAPS ELECTRO 470UF 63V CAPS ELECTRO 47UF 450V CAP ELECTRO 470 UF 400V SMD CAP 22UF 6.3V 105DEG SMD CAP 33UF 6.3V 105DEG SMD CAP 47UF 6.3V 105DEG SMD CAP 100UF 6.3V 105DEG SMD CAP 10UF 16V 105DEG SMD CAP 22UF 16V 105DEG SMD CAP 47UF 16V 105DEG SMD CAP 4.7UF 25V 105DEG SMD CAP 6.8UF 25V 105DEG SMD CAP 22UF 25V 105DEG SMD CAP 0.1UF 50V 105DEG SMD CAP 0.68UF 50V 105DEG SMD CAP 1.0UF , 112-440 112-490 112-715 112-721 112-743 112-765 112-771 112-793 SMD CAP 2.2UF 50V 105DEG SMD CAP 4.7UF
RS Components
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dinverter 768r G7D-412S Ericsson Installation guide for RBS 6201 OMRON G7d TH3 thermistor 6201 RBS ericsson user manual HUF76107P3 IEEE1394 8210I 8210E 3110I 74VHC04B
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