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Part Manufacturer Description Datasheet BUY
TPA2016D2RTJT Texas Instruments 2.8-W/Ch Stereo Class-D Audio Amplifier with SmartGainTM AGC/DRC (TPA2016) 20-QFN -40 to 85 visit Texas Instruments
TPA2016D2RTJR Texas Instruments 2.8-W/Ch Stereo Class-D Audio Amplifier with SmartGainTM AGC/DRC (TPA2016) 20-QFN -40 to 85 visit Texas Instruments Buy
BQ2016DBQ Texas Instruments NiCd/NiMH Gas Gauge For High Discharge Rates (>5A), with Pack Capacities (<5Ah) 28-SSOP 0 to 70 visit Texas Instruments
BQ2016DBQG4 Texas Instruments NiCd/NiMH Gas Gauge For High Discharge Rates (>5A), with Pack Capacities (<5Ah) 28-SSOP 0 to 70 visit Texas Instruments
TPA2016D2YZHT Texas Instruments 2.8-W/Ch Stereo Class-D Audio Amplifier with SmartGainTM AGC/DRC (TPA2016) 16-DSBGA -40 to 85 visit Texas Instruments
TPA2016D2YZHR Texas Instruments 2.8-W/Ch Stereo Class-D Audio Amplifier with SmartGainTM AGC/DRC (TPA2016) 16-DSBGA -40 to 85 visit Texas Instruments Buy

SLG 2016 D

Catalog Datasheet MFG & Type PDF Document Tags

SLG 2016 D

Abstract: 68000 memory range Features/ Applications Ordering code Fig- S LR 2016 red SL02016 HER SLG 2016 green S LY 2016 , immunity · 100% burned-in and tested · TTL com patible over op erat ing tem perature range S C D 5580 red SCD5581 yellow SC D 5582 HER S C D 5583 green S C D 5584 HEG* S C D 55100 red SCD55101 yellow S C D 55102 HER S C D 55103 green S C D 55104 HEG* 3.68 mm 10 ±50/ ± 6 5 deg 25 (5 x 5 ) Operating - 4 0 , rs In te rn a l R A M lo r u p to 16 u s e r d e fin a b le c h a r a c te rs P r o g ra m m a b le c
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SLG 2016 D 68000 memory 68000-A8640 Q68000-A8641 Q68000-A8642 Q68000-A8643 0-A8636 68000-A8637

mc 4011

Abstract: working of 4011 IC ) Polarity (d) Qualification designation code (first letter 'C' may be omitted). (e) Acceptance date and , Inspection. Examination or test MIL-STD-750 L T Min Rej No. Symbol Limits -V Method Details P D Min , .10 100 uAdc uAdc Capacitance 4001 VR = 0 Vdc f = 1 Mc V_j = 50 m (max) Slg c 4.0 pf o MIL SPECS IC , MIL-STD-750 L T Min Rej No. Symbol Limits Method Details P D Min Max Unit Suberouo 2 (cont'd , Min Rej No. Symbol Liïïiits Method Details P D Min Max Unit Suberoun 1 Physical dimensions
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mc 4011 working of 4011 IC 220L3 mc 4016 B ic military part marking symbols jan ic 4016 MIL-S-19500/188A JAN-1N251 0DD550S MIL-S-19500

SCF 5784

Abstract: 5583A Intelligent Displays SLR 2016 hyper red · SLO 2016 super red 4.72 SLG 2016 green 19.91 x 10.54 Parallel · SLY 2016 yellow · · ±50/ ±75 deg. 4 HDSP 2001 LP yellow 3.7 HDSP 2002 , INTELLIGENT D ISPLAYS Temperature range Features Order Code Figure 8-digit Ceramic Hi-Rel , (mm) Outline drawings dimensions in inch (mm) Figure 2 SLX 2016 0.400 ±.015 (10.16 ±.38
OSRAM
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SCF 5784 5583A DLG 2416 5542Q SCF 5741 SCD 5583A SCF5740 PD3537 PD243X PD4437 HDSP211XS DLO4135

SMO-14

Abstract: SLG 2016 D equipmentcircuits. (See 3.k and L.2 herein. ) 1.2 gutlineand d~.1.3 ~.- $ (At TA = +250c, unless , r MM C@. D Vm.-l .5Vdc cOuectOr-smitterCutozf mO lwlt : 2m5 2SL26 21fh27 BiasCanal , Baee-mitter voltage vc~-zoVda vc~.lev& v@.15 V& EM Cod D %:.+ `& TestCad. B 1s-1.0 m.ido Vcf-o. 25v& Coil.aotor-bnse Mae Cd. D *-25 UA* bmakdmn vti- 3all Couectm-edtter breakdownvtitige , -18 -15 - v& *6O Vdo -20 - WC D Ifyl.omldc Bias Cad. 2sk26 2W27 3026 -3
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2N425 SMO-14 2SK26 N4 TAM 2N42 2n427 GERMANIUM SMALL SIGNAL TRANSISTORS MIL-S-19500A1B 2NL27 61L-S-19500A1 MIL-8-19500 MIL-STD-202

KTY 88

Abstract: KTY 20-6 5581 SCD 5582 SCD 5583 SCD 5584 SCD 55100 SCD 55101 SCD 55102 SCD 55103 SCD 55104 SLR 2016 SLO 2016 SLG , Q68000-A7775 Q68000-A7776 Q68000-A7777 Typ Type IL1 PD 2435 PD 2437 PD 4437 D L0 4135 D L G 4137 HDN 1075 0 HDN , MR 105 KSY 10 104 KTY 10-62 106 BPX 61 18 24 IR-B2 FP 410 L (4 x 80) FM 103 FP 210 D 250-22 103 103 FP 210 L 100-22 103 FP 201 L 100 FP 412 D 250 103 FP 212 D 250-22 103 FP 212 L 100-22 103 104 FP 310 , 4N38 DLR 1414 DLO 1414 DLG 1414 DLR 2416 DLO 2416 DLG 2416 DLR 3416 DLO 3416 D LG 3416 H11A1 H11A2
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Q62702-N204 Q62902-B152-F222 Q62902-B155-F222 Q62902-B156-F222 KTY 88 KTY 20-6 Q62703-N209 Q60215-Y111-S5 Q60215-Y1111 Q60215-Y1112 Q60215-Y1113 Q60215-Y62 Q60215-Y63-S1

FP 310

Abstract: Q62902-B155-F222 -5 SLG 2016 SLO 2016 SLR 2016 SLY 2016 SMX-1 SRD00111Z SRD00212W SRD00214C SRD 00214H Bestellnummer , Q68000-A7156 DL 24 16T Q68000-A5577 D L G 1414 Q68000-A8093 DLG 2416 Q68000-A8096 D L G 3416 Q68000-A8099 D LG , Q68000-A8092 DLO 2416 Q68000-A8095 DLO 3416 Q68000-A8098 DLO 4135 Q68000-A4297 D LO 7135 Q68000-A7157 DLR 1414 , Q65210-L101 FP 210 D 250-22 Q65210-D250-W5 FP 210 L 100-22 Q65210-L100-W4 FP 212 D 250-22 Q65212-D2504 FP 212
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FP 310 Siemens LS 3369-fh irl 3034 LG 57A KTY 20-5 Q68000-A7820 6N135 6N136 6N138 6N139 BPW21 CNY17-1

SFH 255 FA

Abstract: FP310L100-75 5500 SL 5501 Sleeve/ring (3 mm) Sleeve/ring (3 mm) Sleeve/ring (5 mm) Sleeve/ring (5 mm) SLG 2016 SLO 2016 SLR 2016 SLY 2016 SMX-1 SRA 00111 Z SRD00111 Z SRD 00212 Z SRD 00214 Z SRD 00215 Z , -40 FH 520 FH 540 FP 201 L 100 FP 210 D 250-22 FP 210 L 100-22 FP 212 D 250-22 FP212L 100-22 , H 11 B2 H 11 B3 H 11 C 4 H 11 C 5 H 11 C 6 H11 D1.H11 D 2 H 11 D 3 HD 1075 G HD 10750 HD
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SFH 255 FA FP310L100-75 Q68000-A8452 dl340m LR 2703 LY3360K 068000-A5018 Q68000-A5017 Q68000-A5707 Q62703-N26 Q62703-N51 Q62703-N52

MDB Resistor

Abstract: 2N1224 Maximum ratings. PT 1/ TA = 25°C pT 2/ Tn = 25°C VEBO vCBO lC fP^i^ » T ^Slg 61 AOp mw' mW Vdc Vdc , - Subgroup 2 5 Collector to base cutoff current 3036 Bias condition D VCB = -Ã2 Vdc xCB0 - -10 fxAdc Collector to emitter cutoff current 3041 Bias condition D Vce = -20 Vdc ICEO - -1 , 30 175 â'"â'"- Collector to base cutoff current n Ail/* OUOO Bias condition D Vcb = -40 Vdc ïcbo â , VEB = -0. 5 Vdc ÃEBO â'" r> -D jxAdc # Ciihironim t i rt IV Noise figure 2N1224 3246 Vnt? =
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2N1225 MDB Resistor transistor equivalent table IRC MMC carbon marking "3AA" 410B MIL-S-19500/189B

2N499A

Abstract: FBT Hr -1 9500/?2B(Slg c) 8 January 1962 KUilTAHI SPECIFICATICI. TRANSISTOR, PNP, GEBMAHIUK TIFE3 ¡taià , forwardâ'"current transfer ratio Snail-signal power gain Bias Cond. D Vcs-1* Vdc Bias Cond. D VCB-5. Vdc Bias Ccnd. C Vcg"-30 Vdc Bias Ccnd. D Vbb"-G.$ Vdo Bias Cond« D ICâ'"1 »Ado VC]ir-9 Vdo Ig-1 MAdo f , 1056 y 1021 3036 ?206 2016 20Ã6 2056 2006 SubgrQ-up 1 Physical dimensions Subgroup 2 Solderability , procedure HIj Test Cond. A or B for gross leaks Bias Cond. D Vdc VcEâ'" 9 Vdc Ip*1 nAde f - 1 kHz - 10
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2N499A FBT Hr marking EHG 2N499 transistor KIN transistor marking WC 2C MIL-S-19S0C/72C ZHU99A 2HU99 2HU99A BT-10 FSC-5961

lg 6154

Abstract: KTY 10-8 2016 SLO2016 SLG 2016 SLY2016 H 11 C 4 Siemens Aktiengesellschaft SFH 628-2 70 SFH 628-3 70 SFH 628-4 70 H 11 C 6 72 H 11 D 1 H 1 D2 , 1 70 SFH 640-1 70 SFH 640-2 70 SFH 640-3 , Q65110-L80-F FP410 L(4 x 80) FM Q65210-D250-W5 FP 210 D 250-22 Q65210-L100-W4 FP 210 L 100-22 Q65210-L101 FP201 L 100 Q65212-D2504 FP 212 D 250-22 Q65212-L1004 FP 212 L 100-22 Q65310-L100-U30 FP 310 L 100-30 Q65310-L100-U75 FP 310 L 100-75 Q65312-L100-U FP312L100 Q65412-D250 FP 412 D 250 Q65412-L100
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lg 6154 KTY 10-8 DL1416 DL440 O62902-B156-F222 O60215-Y63-S1 Q60215-Y65 Q60215-Y66 Q60215-Y67 Q60215-Y111-S4 Q62607-S60

JRC 45600

Abstract: 45600 JRC Substitution Guide U D C 621.382.3 Diagram s THE S E M IC O N INTERNATIONAL INDEXES Volume 1 - , 78 6 Loose leaf update pack - ISBN 0 9 0 4 9 4 4 79 4 Volume 2 - D IO D E S and THYRISTORS - , 4.004 m § D ia g ra m s Abbreviations Diagrams and Tables 5.0° 1 5.003 i 1 , 100â'" ECL 4 2.001 2009 2.091 2-098 2.109 2.140 k i i IN T R O D U C T IO N The , Aktualisierungspaket, lose Blotter - ISBN 0 9 0 4 9 4 4 79 4 Band 2: D IO D E N und THYRISTOREN - Ausgabe 1 6
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JRC 45600 45600 JRC YD 803 SGS TDA 7277 krp power source sps 6360 TDA 5072 ZOP020 ZOP021 ZOP023 ZOP022 ZOP024 ZOP025

TRANSISTOR si 6822

Abstract: LM 3140 Technische Erläuterungen P h o to n e n v e rs c h ie d e n e r W e lle n lä n g e / p h o t o n s b la u / r o t / in f r a r o t / b lu e re d in f r a r e d / / / , / / '' of d if f e r e n t w a v e le n g th s ,K o n ta k t/c o n ta c t P + -Ge b i e t / r e g io n O x i d / o x id e o p tis c h e o p tic a l V e rg ü tu n g / c o a tin g N K t W R a u m la d u n g s z o , / r e g ¡ o n M e t a llk o n t a k t / m e ta l c o n ta d Bild 1 Planare Si-Fotodiode (Schem a
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TRANSISTOR si 6822 LM 3140 si 6822 transistor transistor 6822 si transistors Si 6822 SN-72500

transistor f422 equivalent

Abstract: transistor f422 / EF9345 MODEM EFG7515 EFB7513 EF7910 I+- · MCU EF6801 . / D IIll.fI###~tns}/J , tPWCH elK High Pulse Width tPWCL elK low Pulse Width CLK \ \ -.-I 'D ns ns ns I 'D >< R.G.B.I. 4Ochar/row - ~ tHO tsu '0 '0 ~ HP to X R.G.B.I. BO char/row I A >< '0 'D X HVS/HS PCNS INPUTCLK eLK ) _ , 21 ~ < m o 0; o m :D "II CO 0 en -I l> r . 84 ··
STMicroelectronics
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EF9367 transistor f422 equivalent transistor f422 thomson CRT COLOUR TV SCHEMATIC DIAGRAM z80 ef9345 TDA 9345 TS68483

2N2222A 338

Abstract: TFK 949 TAD TAD TAO TAD TIB ACY17 ACY17 ACY17 ACY17 0C44N 2N1176 2N1176 2N1176 2N1176 2N2614 0 0 D 0 0 , 0 0 D 0 2P 50TP 32TP 25MN 25MN 25MN IMA 50DMA 5D0MA 500MA 500MA RLG AHG AHG AHG AHH OBS DBS DBS
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2N2222A 338 TFK 949 ac128 ad161 2N1167 BSY19 2CY17 2CY18 2CY19 2CY20 2CY21 240MWF

70146

Abstract: triac tag 8518 express w ritte n permission o f the publisher. © IC MASTER, solely o w n e d by Hearst Business Com m , _PART N U M B E R GU I D E _ I _ PART N U M B E R I NDEX _ I MA S T E R S E L E C T I O N QU I D mO MA5TER APPLICATION NOTE DIRECTORY IMPORTANT FEATURES OF TOUR Typical , ith binary output aid con­ verters with decimal output, d/a converters, display driv­ ers, error , manufacturers to perform MILSTD-883 screening and high-reliability testing. 3107 A D V ER TISER S IN DEX
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70146 triac tag 8518 X2864AD la 4440 amplifier circuit diagram 300 watt 8377 motorola TC9160

uPD70F3579

Abstract: uPD70F3585 er you need tra n s is to rs by th e m illio n o r specialised sem ic o n d u cto r devices by th e dozen, ask G othic first! T hey have the p ro d u ctio n c a p ab ility an d the u p -to -d a te technology for to d ay â'™s a n d to m o rro w â'™s re q u ire m e n ts . Q u ality is d esig n ed -in to every M u llard se m ic o n d u cto r an d , like th e tech n ical b ack -u p service th a t su p p o rts each p ro d u ct, is n ot so m eth in g for w hich you pay ex tra. SEMICONDUCTORS rv
Renesas Electronics
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PD70F3578 PD70F3580 PD70F3582 PD70F3583 uPD70F3579 uPD70F3585 uPD70F3572 uPD70F3570 uPD70F3571 uPD70F3584 V850E2/F V850E2/FE4-L PD70F3570 PD70F3571 PD70F3572 V850E2/FF4-L

uPD70F3558

Abstract: uPD70F35 Birmingham, AL 35209 (205)942-4044 555 Sparkman Drive Suite 820-D Huntsville, AL 35816 (205) 837-9091 , embassy in Washington D C. An additional fee may be applied to any export order that requires Newark to , PRICES ARE NET F.O.B. SHIPPING POINT AND DO NOT IN C LU D E F E D E R A L , STATE, OR LOCAL TAXES , COMPARISON PURPOSES ONLY. W A R R A N T Y A N D D IS C L A IM E R S IN C E THE SELLER, NEWARK ELECTRONICS , BEYOND THE D ES C R IPTIO N C O N TA IN E D HEREIN. SELLER D ISCLA IM S ANY IM PLIED W ARRANTIES OF M
Renesas Electronics
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uPD70F3558 uPD70F35 v850E2 FJ4 Manual UPD70F40 V850E2/FG4 V850E2/FJ4 V850E2/FK4 V850E2/FL4 PD70F3548 PD70F3549
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