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ISL73096RHVX Intersil Corporation RF POWER TRANSISTOR visit Intersil
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ISL73128RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
LDC1000NHRJ Texas Instruments 5V, High Resolution, Inductance to Digital Converter for Inductive Sensing Applications 16-WSON -40 to 125 visit Texas Instruments
LDC1000NHRR Texas Instruments 5V, High Resolution, Inductance to Digital Converter for Inductive Sensing Applications 16-WSON -40 to 125 visit Texas Instruments Buy

SIT Static Induction Transistor

Catalog Datasheet MFG & Type PDF Document Tags

SIT Static Induction Transistor

Abstract: "static induction transistor" AQV234 HS (High Sensitivity) Type 1-Channel (Forni A) Type PhotoMOS RELAYS UL File No.: E43149 CSA File No.: LR26550 FEATURES 1. High sensitivity type LED operate current: typical 0.31 mA 2. Power MOSFET incorporating SIT (Static Induction Transistor) allows control loads up to 0.15 A with input current 2 mA 3. Low-level off state leakage current (Typical 1 |iA at 400 V load voltage) 4. Eliminates the need for a power supply to drive the power MOSFET 5. Low thermal electromotive force (Approx
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SIT Static Induction Transistor Static Induction Transistor Static Induction Transistor SIT AQV234AX AQV234AZ AQV234A

SIT Static Induction Transistor

Abstract: 2SK180 Another Tokin exclusive. Static Induction Ibansisiors SIT (Static Induction Transistor) w as in , d furth er low ering th e internal resistance in SIT, this transistor can h a n d le large p o w e r , 1979 as a n industrial p o w e r SIT. SIT offers several o u tsta n d in g a d v a n ta g e s o v e r o , le only low electrical cu rrents, SIT is ideal for larg e-p ow er applications. A n d b y a rra n g , , SIT can b e readily a d a p te d to parallel o p eratio n, so you can use up to a plenty of 1 kW- or 3
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2SK180 thf-51 tokin sit transistor 2SK182E PLL for induction heating sit transistor L-03E

SIT Static Induction Transistor

Abstract: create uhf vhf tv matching transformer , excluding the SIT (Static Induction Transistor which is a depletion mode junction FET) and Gallium , positive for an NPN type transistor. Best results are obtained with a constant voltage source of 0.6 ­ , RF Application Reports AN1529 BIAS C2 C3 RF INPUT transistor, whether in a single , , i.e., provide matching networks inside the headers, close to the transistor chip. A basic common base , signal circuits for receiver and low power transmitter designs. The selected transistor parameters
Motorola
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create uhf vhf tv matching transformer AR165S Granberg power bjt advantages and disadvantages AR-165S all mosfet vhf power amplifier narrow band AN1529/D

MG1007-42

Abstract: MG1020-M16 Power Matters. RF & Microwave Diode and Transistor Products Microsemi RFIS Integrated Solutions RF & Microwave Diode and Transistor Products Within this short form catalog are the combined , : Diode Products: Power Transistor Products: Microsemi Corporation Microsemi Corporation , Contents Diode Products Power Transistor Products Overview: Diode Products 4 About RF & Microwave Power Transistor Products 26-27 PIN Diodes Selection Guide 5 GaN & SiC & SiC Wide
Microsemi
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MG1007-42 MG1020-M16 MSC1075M GC4200 MS4-009-13

mcz 300 1bd

Abstract: SIT Static Induction Transistor Transistor: FET MOSFET IGBT (Insulated Gate Bipolar Transistor: , . ) ) SCR (Silicon , ) ) ) ) ) IC) IC IC DRAM (Dynamic Random Access Memory) SRAM (Static Random Access Memory) ROM FeRAM , . (FET) MOSFET MESFET Metal Semiconductor Field Effect Transistor . P HEMT High Electron Mobility Transistor P (G) - (O) (S) · GaAs , Junction FET (M) N - - . GaAs HBT Heterojunction Bipolar Transistor
Toshiba
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mcz 300 1bd HgCdTe philips igbt induction cooker UJT pin identification Photo DIAC thyristor BT 161

SIT Static Induction Transistor

Abstract: schematic diagram induction heater sensitivity type LED operate current: typical 0.31 mA 2. Power MOSFET incorporating SIT (Static Induction Transistor) allows control loads up to 0.15 A with input current 2 mA 3. Low-level off state leakage , conventional transistor type. As a result, a variety of circuit connection are possible and power circuits
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schematic diagram induction heater mosfet induction heater schematic diagram induction heating diagram induction heater Bipolar Static Induction Transistor AC/DC Electronic Load AQV254 AQV254R AQW21 AQW25 AQV454 AQW65

SIT Static Induction Transistor

Abstract: schematic diagram induction heater sensitivity type LED operate current: typical 0.31 mA 2. Power MOSFET incorporating SIT (Static Induction Transistor) allows control loads up to 0.15 A with input current 2 mA 3. Low-level off state leakage , conventional transistor type. As a result, a variety of circuit connection are possible and power circuits
Matsushita Automation
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pulse transformer 4503 6 pin AQV10 AQV20 AQV21 STATIC INDUCTION Ultrasonic Cleaning power generator schematic dia AQV454H AQW454 AQW61 AQW654 AQW614 AQY414S

tokin sit transistor

Abstract: SIT Static Induction Transistor TOKIN CORP 54E D 'iQbTbBb 0 0 0 1 0 5 1 1 4 1 TOAI NEW PRODUCTS UPDATE Small-sized Static Induction Transistor (SIT) with high withstand voltage Outline TQKIfl 'T -S I -ii, led. This device is a static induction transistor especially suited for applications which require high-speed switching and a high withstand voltage. The size of the highly-reliable SIT was reduced and a new To-3 metallic case was developed. Features · High withstand voltage (withstand voltage : 1350
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TC-30 58AA tokin Tokin* SIT 9936 transistor transistor sit TC-20 UD-04E N920920P1

SIT Static Induction Transistor

Abstract: sit transistor NEW PRODUCTS UPDATE Small-sized Static Induction Transistor (SIT) with high withstand voltage Applications â'¢ Power supplies for lasers â'¢ Discharge power supplies â'¢ Voltage power supplies Specifications TOKin led. Outline This device is a static induction transistor especially suited for applications which require high-speed switching and a high withstand voltage. The size of the highly-reliable SIT was reduced and a new To-3 metallic case was developed. Features â'¢ High withstand voltage
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STATIC INDUCTION tokin SIT Induction-Transistor TOKIN 5 Tokin SIT transistor TO-3 Outline Dimensions E08-875-1479
Abstract: 0405SC-1500M Rev B 0405SC-1500M 1500Watts, 125 Volts, Class AB 406 to 450 MHz Silicon Carbide SIT PRELIMINARY SPECIFICATION CASE OUTLINE 55ST FET (Common Gate) GENERAL DESCRIPTION The 0405SC-1500M is a Common Gate N-Channel DEPLETION MODE Class AB SILICON CARBIDE (SiC) STATIC INDUCTION TRANSISTOR (SIT) capable of providing 1500 Watts of RF power from 406 to 450 MHz. The transistor is designed , operating conditions as a Pulsed RF transistor as listed under the Functional Characteristics Note 2 Microsemi
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1500W 18AWG

SIT Static Induction Transistor

Abstract: transistor 406 specification 0405SC-1500M Rev B 0405SC-1500M 1500Watts, 125 Volts, Class AB 406 to 450 MHz Silicon Carbide SIT PRELIMINARY SPECIFICATION GENERAL DESCRIPTION CASE OUTLINE 55ST FET (Common Gate) The 0405SC-1500M is a Common Gate N-Channel DEPLETION MODE Class AB SILICON CARBIDE (SiC) STATIC INDUCTION TRANSISTOR (SIT) capable of providing 1500 Watts of RF power from 406 to 450 MHz. The transistor is designed , operating conditions as a Pulsed RF transistor as listed under the Functional Characteristics Note 2
Microsemi
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transistor 406 specification electrolytic capacitor, .1uF Power Transistors SIT RF Transistor 1500 MHZ

electrolytic capacitor, .1uF

Abstract: electrolytic capacitor, 1uF 0405SC-2200M Rev A1 0405SC-2200M 2200Watts, 125 Volts, Class AB 406 to 450 MHz Silicon Carbide SIT PRELIMINARY SPECIFICATION GENERAL DESCRIPTION CASE OUTLINE 55TW-FET (Common Gate) The 0405SC-2200M is a Common Gate N-Channel DEPLETION MODE Class AB SILICON CARBIDE (SiC) STATIC INDUCTION TRANSISTOR (SIT) capable of providing 2200 Watts of RF Peak power from 406 to 450 MHz. The transistor is designed for use in High Power Amplifiers supporting applications such as UHF Weather Radar
Microsemi
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electrolytic capacitor, 1uF capacitor 330pF ATC CHIP transistor 348 425-450MHz 2200W

static induction transistor SIT

Abstract: "silicon carbide" FET 0405SC-1000M Rev C 0405SC-1000M 1000Watts, 125 Volts, Class AB 406 to 450 MHz Silicon Carbide SIT PRELIMINARY SPECIFICATION GENERAL DESCRIPTION CASE OUTLINE 55KT FET (Common Gate) 1 = Drain 2 = Gate 3 = Source The 0405SC-1000M is a Common Gate N-Channel Class AB SILICON CARBIDE STATIC INDUCTION TRANSISTOR (SIT) capable of providing 1000 Watts of RF power from 406 to 450 MHz. The transistor is designed for use in High Power Amplifiers supporting applications such as UHF Weather Radar
Microsemi
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1000uf electrolytic capacitor 1000UF 20V CAPACITOR transistor 1000W x2404 1000W RG6006

j130 fet

Abstract: 33 J 250 capacitor 0405SC-1000M Rev B 0405SC-1000M 1000Watts, 125 Volts, Class AB 406 to 450 MHz Silicon Carbide SIT PRELIMINARY SPECIFICATION GENERAL DESCRIPTION The 0405SC-1000M is a Common Gate N-Channel Class AB SILICON CARBIDE STATIC INDUCTION TRANSISTOR (SIT) capable of providing 1000 Watts of RF power from 406 to 450 MHz. The transistor is designed for use in High Power Amplifiers supporting applications such as UHF Weather Radar and Long Range Tracking Radar. The device is an addition to a series of High
Microsemi
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j130 fet 33 J 250 capacitor xl33 silicon carbide

electrolytic capacitor, .1uF

Abstract: ATC capacitor 56pf 0150SC-1250M Rev A 0150SC-1250M 1250Watts, 125 Volts, Class AB 150 to 160 MHz Silicon Carbide SIT PRELIMINARY SPECIFICATION GENERAL DESCRIPTION The 0150SC-1250M is a Common Gate N-Channel Class AB SILICON CARBIDE STATIC INDUCTION TRANSISTOR (SIT) capable of providing 1250 Watts minimum of RF power from 150 to 160 MHz. The transistor is designed for use in High Power Amplifiers supporting applications such as VHF Weather Radar and Long Range Tracking Radar. The device is the first in a series of
Microsemi
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ATC capacitor 56pf 1250W ATC100B

0150SC-1250M

Abstract: 0150SC-1250M Rev B 0150SC-1250M 1250Watts, 125 Volts, Class AB 150 to 160 MHz Silicon Carbide SIT PRELIMINARY SPECIFICATION GENERAL DESCRIPTION The 0150SC-1250M is a Common Gate N-Channel Class AB SILICON CARBIDE STATIC INDUCTION TRANSISTOR (SIT) capable of providing 1250 Watts minimum of RF power from 150 to 160 MHz. The transistor is designed for use in High Power Amplifiers supporting applications such as VHF Weather Radar and Long Range Tracking Radar. The device is the first in a series of
Microsemi
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Abstract: 0405SC-1000M Rev F 0405SC-1000M 1000Watts, 125 Volts, Class AB 406 to 450 MHz Silicon Carbide SIT PRELIMINARY SPECIFICATION CASE OUTLINE 55ST FET (Common Gate) GENERAL DESCRIPTION The 0405SC-1000M is a Common Gate N-Channel Class AB SILICON CARBIDE STATIC INDUCTION TRANSISTOR (SIT) capable of providing 1000 Watts of RF power from 406 to 450 MHz. The transistor is designed for use in High Power Amplifiers supporting applications such as UHF Weather Radar and Long Range Tracking Radar. The device is an Microsemi
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transistor 406 specification

Abstract: capacitor 60 pF 0405SC-1000M Rev A 0405SC-1000M 1000Watts, 125 Volts, Class AB 406 to 450 MHz Silicon Carbide SIT PRELIMINARY SPECIFICATION GENERAL DESCRIPTION The 0405SC-1000M is a Common Gate N-Channel Class AB SILICON CARBIDE STATIC INDUCTION TRANSISTOR (SIT) capable of providing 1000 Watts of RF power from 406 to 450 MHz. The transistor is designed for use in High Power Amplifiers supporting applications such as UHF Weather Radar and Long Range Tracking Radar. The device is an addition to a series of High
Microsemi
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capacitor 60 pF

J294

Abstract: sit transistor 0405SC-1000M Rev F 0405SC-1000M 1000Watts, 125 Volts, Class AB 406 to 450 MHz Silicon Carbide SIT PRELIMINARY SPECIFICATION GENERAL DESCRIPTION CASE OUTLINE 55ST FET (Common Gate) The 0405SC-1000M is a Common Gate N-Channel Class AB SILICON CARBIDE STATIC INDUCTION TRANSISTOR (SIT) capable of providing 1000 Watts of RF power from 406 to 450 MHz. The transistor is designed for use in High Power Amplifiers supporting applications such as UHF Weather Radar and Long Range Tracking Radar. The device is an
Microsemi
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J294 2.t transistor j294 J29-4 J072
Abstract: 0405SC-2200M Rev A1 0405SC-2200M 2200Watts, 125 Volts, Class AB 406 to 450 MHz Silicon Carbide SIT PRELIMINARY SPECIFICATION CASE OUTLINE 55TW-FET (Common Gate) GENERAL DESCRIPTION The 0405SC-2200M is a Common Gate N-Channel DEPLETION MODE Class AB SILICON CARBIDE (SiC) STATIC INDUCTION TRANSISTOR (SIT) capable of providing 2200 Watts of RF Peak power from 406 to 450 MHz. The transistor is designed for use in High Power Amplifiers supporting applications such as UHF Weather Radar and Long Range Microsemi
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