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SILICON TRANSISTOR CORP

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: 8254022 SIL ICpN TRANSI STOR CORP SILICON TRANSISTOR CORP flfi 88D 00799 p 7*"'33 -/3 DE , saturation voltage 8254022 SILICON TRANSISTOR CORP 88D 00800 D 7~~3*>'/3 SILICON TRANSISTOR CORP -" AS DE , is connected to case. TO-57 PACKAGE Collector is connected to case. 22 8254022 SILICON TRANSISTOR CORP 88D 00801 D 7'"33"/^ SILICON TRANSISTOR CORP " flfl »E|fl2S40aa ODODflDl 3 -r- 33-1/ , transistor terms and definitions: NXXXX, see numerical index on page 9. Bvcbo Bvceo Bvcer Bvcex Bvebo ... OCR Scan
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3 pages,
147.86 Kb

npn transistor to-66 SDN22301 SDN22312 SDN22313 SILICON TRANSISTOR CORP "TO-3" SRSP4296 STA8341 STA8309 SRSP4299 SRSP4298 TO53 package STS660 STS409 free pnp and npn transistor STS410 npn 331 NPN 200 VOLTS 20 Amps POWER TRANSISTOR SILICON TRANSISTOR CORP TEXT
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Abstract: 2N5109 2N5109 SILICON NPN RF TRANSISTOR Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N5109 2N5109 is a Silicon NPN Epitaxial Planar RF Transistor mounted in a hermetically , Corp. 2N5109 2N5109 NPN RF TRANSISTOR TO-39 CASE - MECHANICAL OUTLINE LEAD CODE: 1) EMITTER 2) BASE 3 , 1.14 TO-39 (REV: R1) R3 (23-June 2005) PROCESS Small Signal Transistor NPN - Silicon RF Transistor Chip CP214 CP214 Central TM Semiconductor Corp. PROCESS DETAILS Process Die Size Die ... Central Semiconductor
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4 pages,
227.31 Kb

VCE-15V transistor marking code AL transistor 2N5109 NPN transistor marking NY chip die npn transistor 2n5109 transistor 2n5109 2N5109 TEXT
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Abstract: 8254022 SILICON TRANSISTOR CORP 88D 00797 D ^^^^ oomm?tv s T lcMax VCEO(SUS) Type Polarity Amps Volts Package 2N6192 2N6192 PNP 5.0 100 TO-39 2N6193 2N6193 PNP 5.0 100 TO-39 2N6211 2N6211 PNP 2.0 250 (Vcer , , see numerical index on page 9. 19 8254022 SILICON TRANSISTOR CORP 88D 00800 D 7~~3*>'/3 SILICON TRANSISTOR CORP -" AS DE|flES4DB5 0000A00 0000A00 1 -T- ACKAGE DESCRIPTIONS AND OUTLINE DRAWINGS TO-3 PACKAGE , 8254022 SILICON TRANSISTOR CORP 88D 00801 D 7'"33"/^ SILICON TRANSISTOR CORP " flfl »E|fl2S40aa ODODflDl ... OCR Scan
datasheet

3 pages,
330.9 Kb

2N6226 2N6217 2N6216 2N6215 2N6214 2N6213 TRANSISTOR TO63 2N6211 2N6227 2N6273 to-3 npn transistor to-66 7 amps pnp transistor 2N6353 2N6307 TO-3 Case 2N6192 2nxxx 2N6192 transistor 2N6274 2N6192 TO53 package 2N6192 2NXXXX 2N6192 SILICON TRANSISTOR CORP 2N6192 2N6192 2N6192 TEXT
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Abstract: Silicon Transistor High Voltage Switching Applications SS2SC4271 SS2SC4271 Silicon Transistor ' Very , 3.0GHz typ. (VCE = 5V, lc = 100mA). SS2SC4272 SS2SC4272 Silicon Transistor 27M H z CB Transceiver Driver Applications S32S C 4257 Silicon Transistor High Voltage Am p, High Voltage Switching Applications · · · , = 5V, lc = 1.5mA). cob = 2 .0 p F (V CB = 100V, f = 1MHz). S52SC4291 S52SC4291 Silicon Transistor Very , Silicon Transistor V H F M ixer Applications · · · · EIAJ: SC-59 SC-59 package High power gain High f j V ... OCR Scan
datasheet

7 pages,
580.79 Kb

transistor K 2056 transistor T K 2056 K 2056 transistor TEXT
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Abstract: Silicon Transistor High Voltage Driver Applications · · · · S A N Y O : T P package Adoption of M B IT , resistance across base and emitter Low saturation voltage Vc eo SS2SC4170 SS2SC4170 Silicon Transistor High , SANYO SEMICONDUCTOR CORP ' 1EE II | 7 1 1 7 0 71 1 O M S im T -il' £>l , , 2SD1999 2SD1999, 2SD2027 2SD2027, 2SD1998 2SD1998, 2SC4170 2SC4170, 2SB1324 2SB1324 Complementary Pair Silicon Transistors Low Saturation Voltage , Complementary Pair Silicon Transistors Motor Driver Applications S A N Y O : PCP package On-chip diode across ... OCR Scan
datasheet

7 pages,
593.52 Kb

2sb1303 TEXT
datasheet frame
Abstract: CTLM1034-M832D CTLM1034-M832D MULTI DISCRETE MODULE TM SURFACE MOUNT LOW VCE (SAT) SILICON NPN TRANSISTOR AND LOW VF SILICON SCHOTTKY RECTIFIER TM Top View Bottom View TLM832D TLM832D CASE MARKING CODE , ) CTLM1034-M832D CTLM1034-M832D Central TM MULTI DISCRETE MODULE TM SURFACE MOUNT LOW VCE (SAT) SILICON NPN TRANSISTOR AND LOW VF SILICON SCHOTTKY RECTIFIER Semiconductor Corp. ELECTRICAL CHARACTERISTICS Q1 , . Central TM Semiconductor Corp. DESCRIPTION: The Central Semiconductor Corp. CTLM1034-M832D CTLM1034-M832D ... Central Semiconductor
Original
datasheet

2 pages,
232.58 Kb

TLM832D marking code cfc marking cfc CTLM1074-M832D CTLM1034-M832D 5V rectifier ic dual npn 500ma TEXT
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Abstract: CTLM1074-M832D CTLM1074-M832D MULTI DISCRETE MODULE TM SURFACE MOUNT LOW VCE (SAT) SILICON PNP TRANSISTOR AND LOW VF SILICON SCHOTTKY DIODE TM Top View Bottom View TLM832D TLM832D CASE MARKING CODE , TM MULTI DISCRETE MODULE TM SURFACE MOUNT LOW VCE (SAT) SILICON PNP TRANSISTOR AND LOW VF SILICON SCHOTTKY DIODE Semiconductor Corp. ELECTRICAL CHARACTERISTICS Q1 (continued): SYMBOL TEST , 's, etc. Central TM Semiconductor Corp. DESCRIPTION: The Central Semiconductor Corp ... Central Semiconductor
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datasheet

2 pages,
233.64 Kb

TLM832D CTLM1074-M832D CTLM1034-M832D 10V 10a Schottky Diode TEXT
datasheet frame
Abstract: CTLM1034-M832D CTLM1034-M832D MULTI DISCRETE MODULE TM SURFACE MOUNT LOW VCE (SAT) SILICON NPN TRANSISTOR AND LOW VF SILICON SCHOTTKY DIODE TM Top View Bottom View TLM832D TLM832D CASE MARKING CODE , TM MULTI DISCRETE MODULE TM SURFACE MOUNT LOW VCE (SAT) SILICON NPN TRANSISTOR AND LOW VF SILICON SCHOTTKY DIODE Semiconductor Corp. ELECTRICAL CHARACTERISTICS Q1 (continued): SYMBOL TEST , 's, etc. Central TM Semiconductor Corp. DESCRIPTION: The Central Semiconductor Corp ... Central Semiconductor
Original
datasheet

2 pages,
233.66 Kb

TLM832D CTLM1074-M832D CTLM1034-M832D dual npn 500ma TEXT
datasheet frame
Abstract: CTLM1074-M832D CTLM1074-M832D MULTI DISCRETE MODULE TM SURFACE MOUNT LOW VCE (SAT) SILICON PNP TRANSISTOR AND LOW VF SILICON SCHOTTKY RECTIFIER TM Top View Bottom View TLM832D TLM832D CASE MARKING CODE , ) CTLM1074-M832D CTLM1074-M832D Central TM MULTI DISCRETE MODULE TM SURFACE MOUNT LOW VCE (SAT) SILICON PNP TRANSISTOR AND LOW VF SILICON SCHOTTKY RECTIFIER Semiconductor Corp. ELECTRICAL CHARACTERISTICS Q1 , . Central TM Semiconductor Corp. DESCRIPTION: The Central Semiconductor Corp. CTLM1074-M832D CTLM1074-M832D ... Central Semiconductor
Original
datasheet

2 pages,
232.55 Kb

TLM832D CTLM1074-M832D CTLM1034-M832D 5V rectifier ic TEXT
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Abstract: =200` C - 3000 Hours 0/100 Transistor - -IC (Failure/ Sample) Basic E lesents Poly SIlicon Resistor - , CORP. N.A . E , D.D. (WED) 09.21'94 11:15/ST 15/ST. 1 1 : 1 2 / NO. 3301512-173 P, 2 GET- Q , transistor, resistor and capacitor. 2. Device structure Fig.l -" Fig.3 show the cross sectional view of transistor cell, capacitor and resistor. The MNS Qletal Nitride Sen¡conductor) sturcture is adoped in capacitors. The resistors are forwed by polisilicon. The features of transistor cell are described below: (1 ... OCR Scan
datasheet

24 pages,
881.79 Kb

X1011 Matsuo Film CAPACITOR OF IC 337 Ta-337 uPC2710 trasistor power mpc2710b UPC2710B H1L-STD-883 trasistor TA-295 poly silicon resistor MPC2710 15/ST 15/ST TEXT
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Archived Files

Abstract Saved from Date Saved File Size Type Download
scaling of the memory cell transistor using silicon process-scaling techniques such as photolithography Greg Atwood , Flash Technology and Manufacturing, Santa Clara, CA, Intel Corp. Al Fazio , Technology and Manufacturing, Santa Clara, CA, Intel Corp. Duane Mills , Memory Components Division, Folsom, CA, Intel Corp. Bill Reaves , Memory Components Division, Folsom, CA, Intel Corp. Index words flash memory transistor. This paper will discuss the evolution of the two bit/cell technology from
/datasheets/files/intel/techno~1/itj/q41997/articles/art_1a-v2.htm
Intel 01/02/1998 4.73 Kb HTM art_1a-v2.htm
devices has been traditionally achieved by aggressive scaling of the memory cell transistor using silicon , Santa Clara, CA, Intel Corp. Al Fazio , Technology and Manufacturing, Santa Clara, CA, Intel Corp. Duane Mills , Memory Components Division, Folsom, CA, Intel Corp. Bill Reaves , Memory Components Division, Folsom, CA, Intel Corp. Index words: StrataFlash, MLC, flash, memory Abstract enabling the storage of two bits of data in a single flash memory transistor. This paper will discuss the
/datasheets/files/intel/techno~1/itj/q41997/articles/art_1a-v1.htm
Intel 02/02/1999 4 Kb HTM art_1a-v1.htm
devices has been traditionally achieved by aggressive scaling of the memory cell transistor using silicon , Santa Clara, CA, Intel Corp. Al Fazio , Technology and Manufacturing, Santa Clara, CA, Intel Corp. Duane Mills , Memory Components Division, Folsom, CA, Intel Corp. Bill Reaves , Memory Components Division, Folsom, CA, Intel Corp. Index words: StrataFlash, MLC, flash, memory Abstract enabling the storage of two bits of data in a single flash memory transistor. This paper will discuss the
/datasheets/files/intel/techno~1/itj/q41997/articles/art_1a.htm
Intel 31/10/1998 4 Kb HTM art_1a.htm
Taiwan to offer foundry services.  UMC Group is United Microelectronics Corp. (UMC), United Semiconductor Corp. (USC), United Integrated Circuits Corp. (UICC), United Silicon, Inc. (USIC) and UTEK Semiconductor Corp. (UTEK). The group leads the dedicated foundry industry in value-added design services and 0.25 , November 30, 1998 - The United Silicon Inc. (USIC) wafer foundry in Taiwan, in which UMC Group and Xilinx industry's first million-gate, 75-million transistor device.  Xilinx began sampling the million-gate Virtex
/datasheets/files/xilinx/docs/rp00002/rp002ca.htm
Xilinx 29/02/2000 6.25 Kb HTM rp002ca.htm
Taiwan to offer foundry services.  UMC Group is United Microelectronics Corp. (UMC), United Semiconductor Corp. (USC), United Integrated Circuits Corp. (UICC), United Silicon, Inc. (USIC) and UTEK Semiconductor Corp. (UTEK). The group leads the dedicated foundry industry in value-added design services and 0.25 , November 30, 1998 - The United Silicon Inc. (USIC) wafer foundry in Taiwan, in which UMC Group and Xilinx industry's first million-gate, 75-million transistor device.  Xilinx began sampling the million-gate Virtex
/datasheets/files/xilinx/docs/wcd00001/wcd00133-v1.htm
Xilinx 16/02/1999 6.32 Kb HTM wcd00133-v1.htm
Transistor CAD: Computer Aided Design CAM: Computer Aided Manufacturing CEO: Chief Executive Metal Oxide Silicon DC: Direct Current DESC: Defense Electronics Supply Council DIP: Dual In-line Package DMOS: Diffused Metal Oxide Silicon DMR: Defective Material Report DO: Second FAE: Field Application Engineer FET: Field Effect Transistor FOB: Freight-On-Board FOD Circuit IGBT: Insulated Gate Bipolar Transistor IMS: Insulated Metal Substrate IPM
/datasheets/files/international-rectifier/docs/wcd00009/wcd009b7.htm
International Rectifier 06/10/1998 8.82 Kb HTM wcd009b7.htm
a single piece of silicon, TImeline more than doubles the transistor density possible with current 0.25 micron processes. TI to acquire Silicon Systems Inc. TI and TDK Corp. of Japan, through its U.S. subsidiary TDK U.S.A. Corp., have announced the signing of a stock purchase agreement by which TI would acquire TDK's semiconductor subsidiary, Silicon Systems Inc. (SSi). Winning in the
/datasheets/files/texas-instruments/data/sc/docs/integrat/96july/contents.htm
Texas Instruments 08/02/1999 9.34 Kb HTM contents.htm
MOS Scaling: Transistor Challenges for the 21st Century MOS Scaling: Transistor Challenges for the 21st Century (continued)     Page 10 of 10 gate oxides. He has worked on transistor design and front-end process integration on Intel's 0.35, 0.25, and 0.18um silicon process technology design for the Pentium® and the Pentium® II microprocessors. Scott is currently managing the development of Intel's 0.13um transistor design. His email
/datasheets/files/intel/techno~1/itj/q31998/articles/art_3who.htm
Intel 31/10/1998 5.1 Kb HTM art_3who.htm
MOS Scaling: Transistor Challenges for the 21st Century MOS Scaling: Transistor Challenges for the 21st Century (continued)     Page 10 of 10 gate oxides. He has worked on transistor design and front-end process integration on Intel's 0.35, 0.25, and 0.18um silicon process technology design for the Pentium® and the Pentium® II microprocessors. Scott is currently managing the development of Intel's 0.13um transistor design. His email
/datasheets/files/intel/techno~1/itj/q31998/articles/art_3who-v1.htm
Intel 02/02/1999 5.1 Kb HTM art_3who-v1.htm