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TD-4.000MDE-T TXC Corporation OSC MEMS 4.000MHZ CMOS SMD visit Digikey
TD-40.000MDD-T TXC Corporation OSC MEMS 40.000MHZ CMOS SMD visit Digikey
TD-4.000MBD-T TXC Corporation OSC MEMS 4.000MHZ CMOS SMD visit Digikey
TD-4.000MBE-T TXC Corporation OSC MEMS 4.000MHZ CMOS SMD visit Digikey
TD-40.000MBD-T TXC Corporation OSC MEMS 40.000MHZ CMOS SMD visit Digikey
TD-40.000MBE-T TXC Corporation OSC MEMS 40.000MHZ CMOS SMD visit Digikey

SIEMENS TD-400

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: SIEMENS SMPS - IC with SIPMOS Driver Output Features â'¢ Switching frequency up to 300 kHz , Group 139 9.92 SIEMENS TDA 4918 TD A 4919 TDA 4918 A, TDA 4919 A TDA 4918 G, TDA 4919 G , TDA 4918A IEP0031Ì. Pin Configuration (top view) Semiconductor Group 140 SIEMENS TDA 4918 , 141 SIEMENS TDA 4918 TD A 4919 HH Block Diagram (TDA 4918) Semiconductor Group 142 SIEMENS TDA 4918 TD A 4919 Block Diagram (TDA 4919) Semiconductor Group 143 SIEMENS TDA 4918 TD A 4919 -
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Q67000-A8021 Q67000-A8143 Q67000-A8018 4918A TDA4918 4918 TDA4918A TDA4919 etd39 P-DIP-20-1 Q67000-A8142 P-DSO-20-1
Abstract: SIEMENS Integrated Hall-Effect Switches for Unipolar and Alternating Magnetic Fields TLE 4904 , _ This Material Copyrighted By Its Respective Manufacturer SIEMENS _TLE 4904 F, TLE 4934 F# TLE 4944 F , ? 371 â  -Ì This Material Copyrighted By Its Respective Manufacturer SIEMENS TLE 4904 F, TLE 4934 F , By Its Respective Manufacturer SIEMENS TLE 4904 F, TLE 4934 F, TLE 4944 F Preliminary Data Pin , 144 â  -X O This Material Copyrighted By Its Respective Manufacturer SIEMENS TLE 4904 F, TLE 4934 -
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siemens automotive sensors siemens magnetic sensors hall current sensor 3A Hall Siemens 4934 Hall Siemens Q67006-A9011 Q67006-A9027 Q67006-A9028
Abstract: SIEMENS BSM 100 GB 120 DN2 IGBT Power Module â'¢ Half-bridge â'¢ Including fast free-wheeling , °C ^Cpuls 152 100 Power dissipation per IGBT Tc = 25 °C Plot 400 W Chip temperature T\ + 150 °C , /150/56 Semiconductor Group 1 Oct-13-1995 SIEMENS BSM 100 GB 120 DN2 Electrical Characteristics, at T , Oct-13-1995 SIEMENS BSM 100 GB 120 DN2 Electrical Characteristics, at T, = 25 °C, unless otherwise , MC Semiconductor Group 1 Oct-13-1995 SIEMENS BSM 100 GB 120 DN2 Power dissipation Pxox = /(7c -
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siemens igbt BSM 150 gb 100 d siemens igbt BSM 150 Gb 160 d Semiconductor Group igbt siemens igbt BSM 50 gb 100 d siemens igbt BSM 50 gb 120 d siemens igbt BSM 400 gb C67076-A2105-A67
Abstract: 1600 0 200 400 600 800 1000 1200 V 1600 Semiconductor Group 1 Oct-13-1995 SIEMENS BSM 100 GB 120 , 200 400 600 800 1000 1200 V 1600 Semiconductor Group 1 Oct-13-1995 SIEMENS BSM 100 GB 120 DN2 , SIEMENS BSM 100 GB 120 DN2 IGBT Power Module â'¢ Half-bridge â'¢ Including fast , = 25 °C Tq = 80 °C ^Cpuls 152 100 Power dissipation per IGBT Tc = 25 °C Plot 400 W Chip , climatic category, DIN I EC 68-1 - 55/150/56 Semiconductor Group 1 Oct-13-1995 SIEMENS BSM 100 GB 120 -
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siemens igbt BSM 100 gb siemens igbt BSM 300 siemens igbt BSM 100 siemens igbt chip
Abstract: SIEMENS Stereo-I F TDA5910 Preliminary Data Bipolar IC Features â'¢ Quasi-parallel sound, AM , out the AFC windows ("up" / "down") and the coincidence information. Siemens Aktiengesellschaft 578 , LSB 1 0 X X X X X X Siemens Aktiengesellschaft 579 This Material Copyrighted By Its Respective , .) DARD POWER ON 5.5 MHz 5.5 MHz =0: MULTISOUND =1: 5.5 MHz FM-IF FM-IF; POWER ON Siemens , suppressed =1 : is suppressed Siemens Aktiengesellschaft 581 This Material Copyrighted By Its Respective -
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TDA 7000 pin description adg 595 AEV 300 SIEMENS saw filter VL3-57 4 tda 7000 FM Q67000-A8167 P-DIP-40
Abstract: SIEMENS Smart Highside Power Switch Features · · · · · · · · · · · · PROFET® BIS 432 1 2 , required for charged inductive loads Semiconductor Group 492 04.96 SIEMENS Pin 1 2 3 4 5 , air. Semiconductor Group 493 SIEMENS Electrical Characteristics Param eter and Conditions , Group 494 SIEMENS Param eter and Conditions at Tj = 25 °C, l/feb = 12 V unless otherwise , circuit current limit (pin 3 to 5)8> , ( max 400 (is if V q n > V o n (s c ) ) T\ =-40°C: 7 1 =25°C: 7 -
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432D2 A400XS bts43212 Q67060-S6204-A2 E3122 E3122A Q67060-S6204-A3
Abstract: â  a b a s t o s oo'ia?'^ s t i â  SIEMENS PRÃFET® BTS 442 D2 Smart Highside Power ,   SIEMENS BTS 442 D2 Pin Symbol 1 GND - Logic ground 2 IN I Input , fl235bOS OD'ìS?'!? 374 SIEMENS BTS 442 D2 Electrical Characteristics Symbol Parameter and , Group 508 â  Ã"23SLÃS GORST'îfl 2QÃ â  SIEMENS _ Parameter and , current limit (pin 3 to 5)8), l(SCp) ( max 400 us if Von > Von(sc) ) 7] =-40°C: 7] =25°C: 7 -
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A235L
Abstract: TLHR 4202 TLHR 4203 TLHR 4205 TLHR 4 400 TLHR 4401 TLHR 4 402 TLHR 4 403 TLHR 4405 TLHR 4 600 , TLHR 6603 TLHR 6605 TLHR 8 400 TLHY 0 4 0 0 TLHY 4 1 0 0 TLHY 4101 TLHY 4102 TLHY 4103 TLHY , TLHY 6202 TLHY 6203 TLHY 6205 TLHY 6 400 TLHY 6401 TLHY 6 402 TLHY 6403 TLHY 6405 TLHY 6 600 TLHY 6601 TLHY 6602 TLHY 6603 TLHY 6605 TLHY 8 4 0 0 TLLR 4 400 TLLR 4401 TLLR 5400 TLLR 5401 TLLY 4 4 0 0 TLLY4401 TLLY 5 400 TLLY 5401 TLMG 2200 TLMR 2 200 T LM V 2 1 0 0 TLMY 2 200 TLPG -
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trw 007 diodes led 7 segment anode TIL 702 7segment sm 4150 tsts 7203 telefunken transistor tddr 5250
Abstract: SIEMENS Smart Highside Power Switch Features · · · · · · · · · · · · · Overload protection , for charged inductive loads Semiconductor Group 519 04.96 SIEMENS Pin 1 2 3 4 5 BTS , is vertical without blown air. Semiconductor Group 520 SIEMENS Electrical Characteristics , 521 SIEMENS Parameter and Conditions at 7] = 25 °C, Vbb = 12 V unless otherwise specified BTS , current limit (pin 3 to 5)8), ( max 400 (is if \/on > Vonisc ) ) 7] =-40°C: 7 1 =25°C: 7j =+150°C -
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siemens cp 528
Abstract: SIEMENS TV SAT IF-FM-Demodulator TDA 6149-5X Preliminary Data Bipolar IC Features â , SIEMENS TD A 6149-5X Pin Configuration (top view) P-DSO-16 AGC Å' 1 16 XI AT F AS Å' 2 15 XI IF IN , SIEMENS TD A 6149-5X AGC Low Pass Filler 16 OPA: l/AFC Output ^Arc=0.5.4V AFC Low Pass Filter 9 IF , Its Respective Manufacturer SIEMENS TD A 6149-5X Circuit Description By capacitive coupling, the , This Material Copyrighted By Its Respective Manufacturer SIEMENS TD A 6149-5X Absolute Maximum -
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TDA6149-5X P-DSO-16-1 Q67000-A5174 UEP05002
Abstract: SIEMENS IGBT Power Module Preliminary data · Solderable Power module · 3-phase full-bridge · , fcpuls 400 300 Ptot 1250 Ti 7"stq ñ thJC ñ thJCD Pulsed collector current, (p = 1 ms Tc = 25 °C Tc = , Group 248 SIEMENS BSM150 GT 120 DN2 Electrical Characteristics, a tT j = 25 °C, unless , Qss 10 S nF 1.5 Semiconductor Group 249 05.96 SIEMENS BSM 150 GT 120 DN2 , . Unit id(on) 200 tr 400 ns 100 ^d(off) 200 600 ff 70 900 100 V 2.3 1.8 ps 2.8 -
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C67070-A2518-A67
Abstract: Fax (+91)11-3 31 96 04 Siemens Ltd. CMP Div,4th Floor 130,Pandurang Budhkar Marg, Worli Mumbai 400 018 , Infineon Technologies AG sales offices worldwide ­ partly represented by Siemens AG A Siemens AG Österreich Erdberger Lände 26 A-1031 Wien T (+43)1-17 07-3 56 11 Fax (+43)1-17 07-5 59 73 AUS Siemens Ltd. 885 Mountain Highway Bayswater,Victoria 3153 T (+61)3-97 21 21 11 Fax (+61)3-97 21 72 75 B Siemens , (+32)2-5 36 69 05 Fax (+32)2-5 36 28 57 Email:components@siemens.nl BR Siemens Ltda. Semiconductores Infineon Technologies
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GATE DRIVER SIEMENS intersil MARKING CODE ZA P-2720-093 P-DSOP-14 Siemens Halbleiter tda21103 TDA21103
Abstract: Infineon Technologies AG sales offices worldwide ­ partly represented by Siemens AG A Siemens AG Österreich Erdberger Lände 26 A-1031 Wien T (+43)1-17 07-3 56 11 Fax (+43)1-17 07-5 59 73 AUS Siemens , Siemens Electronic Components Benelux Charleroisesteenweg 116/ Chaussée de Charleroi 116 B-1060 Brussel/Bruxelles T (+32)2-5 36 69 05 Fax (+32)2-5 36 28 57 Email:components@siemens.nl BR Siemens , ,Ontario K2K 2E2 T (+1)6 13-5 91 63 86 Fax (+1)6 13-5 91 63 89 CH Siemens Schweiz AG Bauelemente Infineon Technologies
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CH-8047 HIP6602B
Abstract: SIEMENS FM-Demodulator for SAT TV with TDA 6142-5X Switchable Input Preliminary Data , TEE â  Semiconductor Group 92 08.93 SIEMENS TD A 6142-5X Pin Configuration (top view) P-DSO , UEP05Û03 â  Ã"53SLOS OObBä^b Ãb^ â  Semiconductor Group 93 SIEMENS TD A 6142-5X Pin Definitions , 7TS â  Semiconductor Group 94 SIEMENS TD A 6142-5X A6C Lowpass 20 IF Imput if IF2 Imput , b31 â  Semiconductor Group 95 SIEMENS TD A 6142-5X Circuit Description The FM modulated -
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Q67000-A5173 P-DSO-20 smd a6c siemens converter converter Satellite Tuner 480-MH UED04054 UED0405S
Abstract: SIEMENS Smart Highside Power Switch Features · · · · · · · · · · · · · Overload protection , for charged inductive loads Sem iconductor Group 409 04.96 SIEMENS Pin 1 2 3 4 5 Symbol , generator per ISO 7637-1 and DIN 40839 Semiconductor Group 410 SIEMENS Electrical Characteristics , 1 st > 0, add An, if Hn>5.5 V Semiconductor Group 411 SIEMENS Param eter and Conditions , current limit (pin 3 to 5)7), ( max 400 jis if Von > Von (sc ) ) Ti =-40°C: 7 1 =25°C: 7j =+150°C -
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542 transistor 542E2 Q67060-S6950-A2
Abstract: SIEMENS Smart Highside Power Switch Features · · · · · · · · · · · · PROFETÒ BTS432I2 , inductive loads Semiconductor Group 369 04.96 SIEMENS Pin 1 2 3 4 5 Symbol GND IN Vbb ST OUT , SIEMENS Electrical Characteristics Param eter and Conditions at Tj = 25 °C, l^bb = 12 V unless , 371 SIEMENS Param eter and Conditions at Tj = 25 °C, Vbb = 12 V unless otherwise specified Protection Functions Initial peak short circuit current limit (pin 3 to 5)8 ), ( max 400 us if V on > V on -
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SIEMENS B 58 371 scr siemens
Abstract: SIEMENS Smart Highside Power Switch Features · · · · · · · · · · · · PROFET® BTS 432 E2 , loads Semiconductor Group 356 04.96 SIEMENS Pin 1 2 3 4 5 Symbol GND IN Vbb ST OUT (Load , 357 SIEMENS Electrical Characteristics Param eter and Conditions at Ti = 25 °C, l/bb = 12 V , , if l/|N>5.5 V Sem iconductor Group 358 SIEMENS Param eter and Conditions at Tj = 25 °C, V , (pin 3 to 5)8> , ( max 400 ps it V o n > V o n (s c ) ) Tj =-40°C: 7] =25°C: 7] =+150°C: Repetitive -
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BTS 400 BTS 432 E2
Abstract: SIEMENS Smart Highside Power Switch Features · · · · · · · · · · · · PROFET® BTS 432 F2 , for charged inductive loads Semiconductor Group 571 04.96 SIEMENS Pin 1 2 3 4 5 Symbol , . Semiconductor Group 572 SIEMENS Electrical Characteristics Parameter and Conditions at Tj = 25 °C, l , V Semiconductor Group 573 SIEMENS Parameter and Conditions at Tj = 25 °C, Vbb = 12 V , Initial peak short circuit current limit (pin 3 to 5)8> , ( max 400 |is if Von > Von(sc) ) 7] =-40°C: 7 1 -
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Zener Diode LT 432 4025-C BTS and MS
Abstract: Characteristics Turn-on delay time ns VCC = 400 V, V GE = 15 V, I C = 30 A, RGon = 11 Rise time VCC = 400 V, V GE = 15 V, I C = 30 A, RGon = 11 Turn-off delay time VCC = 400 V, V GE = 0 V, IC = 30 A, RGoff = 11 Fall time VCC = 400 V, V GE = 0 V, IC = 30 A, RGoff = 11 Turn-on energy 1) mJ VCC = 400 V, V GE = 15 V, I C = 30 A, RGon = 11 Turn-off energy VCC = 400 V, V GE = 0 V, IC = 30 A, RGoff = 11 Total switching energy 1) VCC = 400 V, V GE = 0/+15 V, I C = 30 A, RG = 11 Siemens
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SGP30N60 SGB30N60 SGW30N60 Q67040-S4237 BUP603D SC35015 SGP30N60 3 Q67041-A4713-A2 Q67041-A4713-A3
Abstract: Characteristics Turn-on delay time ns VCC = 400 V, V GE = 15 V, I C = 20 A, RGon = 16 Rise time VCC = 400 V, V GE = 15 V, I C = 20 A, RGon = 16 Turn-off delay time VCC = 400 V, V GE = 0 V, IC = 20 A, RGoff = 16 Fall time VCC = 400 V, V GE = 0 V, IC = 20 A, RGoff = 16 Turn-on energy 1) mJ VCC = 400 V, V GE = 15 V, I C = 20 A, RGon = 16 Turn-off energy VCC = 400 V, V GE = 0 V, IC = 20 A, RGoff = 16 Total switching energy 1) VCC = 400 V, V GE = 0/+15 V, I C = 20 A, RG = 16 Siemens
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SGP20N60 SGB20N60 SGW20N60 Q67041-A4712-A2 Q67040-S4236 BUP602D Q67041-A4712-A3
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