NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: SI96-06 10/100 Ethernet Protection SI98-02 SI98-02 Low Capacitance Devices SI96-07 SI96-07 PCB Design ... | Original |
1 pages, |
tvs-diode diode 02 68 SI96-04 design ideas SI97-02 SI96-08 SI99-02 SI96-18 SI97-03 SI96-01 datasheet abstract |
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| Abstract: SI96-06 Surging Ideas TVS Diode Application Note PROTECTION PRODUCTS EPD Transient Voltage Suppressors for Low Voltage Electronics passivation At voltages below 5V, conventional avalanche technology is impractical. In order to achieve stand-off voltages below 5V, very high impurity concentrations (10+18cm-3) must be used. This leads to detrimental performance characteristics such as high capacitance and very high reverse leakage current. In a joint development effort, Semtech Corporation and the ... | Original |
1 pages, |
design ideas 3.3V TVS diode "punchthrough voltage" AND ESD pn junction diode structure datasheet abstract |
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| Abstract: SI96-06 Surging Ideas TVS Diode Application Note PROTECTION PRODUCTS EPD Transient Voltage Suppressors for Low Voltage Electronics passivation At voltages below 5V, conventional avalanche technology is impractical. In order to achieve stand-off voltages below 5V, very high impurity concentrations (10+18cm-3) must be used. This leads to detrimental performance characteristics such as high capacitance and very high reverse leakage current. In a joint development effort, Semtech Corporation and the ... | Original |
1 pages, |
TVS diode Application Note design ideas pn junction diode structure "punchthrough voltage" AND ESD datasheet abstract |
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| Abstract: Surging Ideas TVS Diode Application Note Revised - February 21, 1999 SI96-06 TEL:805-498-2111 FAX:805-498-3804 WEB:http://www.semtech.com EPD Transient Voltage Suppressors for Low Voltage Electronics At voltages below 5V, conventional avalanche technology is impractical. In order to achieve stand-off voltages be+18 -3 low 5V, very high impurity concentrations ( 10 cm ) must be used. This leads to detrimental performance characteristics such as high capacitance and very high reverse leakage ... | Original |
1 pages, |
TVS 30V pn junction diode structure SI96-06 SI96-06 abstract |
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| Operation (20k, 24 Mar 99) SI96-06 PDFs: SLV Series TVS for Low Voltage www.datasheetarchive.com/files/semtech/html/tvs_apps.html |
Semtech | 22/03/2000 | 38.82 Kb | HTML | tvs_apps.html |