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Part : SI4431DY Supplier : Fairchild Semiconductor Manufacturer : Rochester Electronics Stock : 25,005 Best Price : $0.24 Price Each : $0.29
Part : SI4431DY-T1 Supplier : Vishay Siliconix Manufacturer : America II Electronics Stock : 1,259 Best Price : - Price Each : -
Part : SI4431DY-T1 Supplier : Vishay Siliconix Manufacturer : Bristol Electronics Stock : 2,500 Best Price : $0.1755 Price Each : $0.6750
Part : SI4431DY Supplier : Vishay Intertechnology Manufacturer : WPG Americas Stock : - Best Price : - Price Each : -
Part : SI4431DY-T1 Supplier : Vishay Intertechnology Manufacturer : WPG Americas Stock : - Best Price : - Price Each : -
Part : SI4431DY-T1-E3 Supplier : Vishay Intertechnology Manufacturer : WPG Americas Stock : - Best Price : - Price Each : -
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SI4431DY Datasheet

Part Manufacturer Description PDF Type
SI4431DY Fairchild Semiconductor P-Channel Logic Level PowerTrench MOSFET Original
Si4431DY Toshiba Power MOSFETs Cross Reference Guide Original
SI4431DY Vishay P-Channel 30-V (D-S) MOSFET Original
Si4431DY Vishay Intertechnology P-Channel 30-V (D-S) MOSFET Original
SI4431DY Vishay Siliconix XSTR, 4431, MOSFET, P-CH, 30V, SO8 Original
SI4431DY_NL Fairchild Semiconductor P-Channel Logic Level PowerTrench MOSFET Original

SI4431DY

Catalog Datasheet MFG & Type PDF Document Tags

4431 mosfet

Abstract: 4431 fairchild Si4431DY P-Channel Logic Level PowerTrench MOSFET General Description Features This , Marking Device Reel Size Tape width Quantity 4431 Si4431DY 13'' 12mm 2500 units 2001 Fairchild Semiconductor International Si4431DY Rev A Si4431DY January 2001 Symbol , . Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% Si4431DY Rev A Si4431DY Electrical Characteristics Si4431DY Typical Characteristics 40 2 -ID, DRAIN CURRENT (A) -6.0V RDS(ON
Fairchild Semiconductor
Original
4431 mosfet 4431 fairchild 4431DY

Si4431BDY-E3

Abstract: Si4431DY-T1 Si4431DY Si4431BDY-E3 (Lead (Pb)-free version) Replaces Si4431DY Si4431BDY-T1 Replaces Si4431DY-T1 Si4431BDY-T1-E3 (Lead (Pb)-free version) Replaces Si4431DY-T1 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Si4431BDY Si4431DY Drain-Source Voltage VDS - 30 - 30 , Specification Comparison Vishay Siliconix Si4431BDY vs. Si4431DY Description: P-Channel, 30 V , Si4431BDY Min Typ Si4431DY Max Min - 3.0 Typ Max - 1.0 Unit Static
Vishay Siliconix
Original
4431BDY 4431BDY-E3 4431BDY-T1 4431DY-T1 4431BDY-T1-E3

Si4431DY

Abstract: Si4431DY P-Channel Enhancement-Mode MOSFET Product Summary VDS (V) rDS(on) (W) 0.040 @ VGS = ­10 V "5.8 0.070 @ VGS = ­4.5 V ­30 ID (A) "4.5 S S S SO-8 S 1 8 D S , Siliconix S-47958-Rev. B, 15-Apr-96 7 Si4431DY Specifications (TJ = 25_C Unless Otherwise Noted , v 300 ms, duty cycle v 2%. 8 Siliconix S-47958-Rev. B, 15-Apr-96 Si4431DY Typical , 50 75 100 125 150 TJ ­ Junction Temperature (_C) 9 Si4431DY Typical
Temic Semiconductors
Original
S-47958--R

004U

Abstract: Tem ic Silieonix _ 4431DY P-Channel Enhancement-Mode MOSFET Product Summary V Ds ( V ) r DS(on) ( ß ) 0.040 @ V GS = - 10 V -3 0 0.070 (gì V Gs = - 4 . 5 V ± 4 .5 I d (A ) ± , /03/95) New Product 2 -9 LITTLE FOOT SÌ4431DY Specifications (Tj = 25 °C Unless , SÌ4431DY Typical Characteristics (25 °C Unless Otherwise Noted) O u tp u t C h aracteristics 0 V[)S , perature ( ° C ) S-41465-Rev. A (07/03/95) New Product 2 -1 1 LITTLE FOOT SÍ4431DY
-
OCR Scan
004U S-41465--R

Si4431DY-T1

Abstract: Ordering Information: Si4431DY-T1 Si4431DY-T1-E3 (Lead (Pb)-Free) ABSOLUTE MAXIMUM RATINGS (TA = 25 , Si4431DY Vishay Siliconix P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W , /W 1 Si4431DY Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter , Document Number: 70151 S-51455-Rev. D, 01-Aug-05 Si4431DY Vishay Siliconix TYPICAL CHARACTERISTICS , Temperature (_C) Document Number: 70151 S-51455-Rev. D, 01-Aug-05 www.vishay.com 3 Si4431DY
Vishay Siliconix
Original
4431DY-T1--E3 S-51455--R

Si4431DY

Abstract: 3V02 Si4431DY Siliconix PChannel EnhancementMode MOSFET Product Summary VDS (V) rDS(on) (W) 0.040 @ VGS = -10 V "5.8 0.070 @ VGS = -4.5 V -30 ID (A) "4.5 S S S SO8 S 1 8 , request FaxBack document #1233. S41465Rev. A (07/03/95) New Product 1 Si4431DY Siliconix , . A (07/03/95) Si4431DY Siliconix Typical Characteristics (25_C Unless Otherwise Noted , , 9, 8, 7, 6, 5 V New Product 3 Si4431DY Siliconix Typical Characteristics (25
Temic Semiconductors
Original
3V02 S41465R
Abstract: Ordering Information: Si4431DY-T1 Si4431DY-T1-E3 (Lead (Pb)-Free) ABSOLUTE MAXIMUM RATINGS (TA = 25 , Si4431DY Vishay Siliconix P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W , /W 1 Si4431DY Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter , Document Number: 70151 S-51455-Rev. D, 01-Aug-05 Si4431DY Vishay Siliconix TYPICAL CHARACTERISTICS , Temperature (_C) Document Number: 70151 S-51455-Rev. D, 01-Aug-05 www.vishay.com 3 Si4431DY Vishay Siliconix
Original

Si4431DY

Abstract: Si4431DY P-Channel Enhancement-Mode MOSFET Product Summary VDS (V) rDS(on) (W) 0.040 @ VGS = ­10 V "5.8 0.070 @ VGS = ­4.5 V ­30 ID (A) "4.5 S S S SO-8 S 1 8 D S , #5148). Siliconix S-47958-Rev. B, 15-Apr-96 9 Si4431DY Specifications (TJ = 25_C Unless , ; pulse width v 300 ms, duty cycle v 2%. 10 Siliconix S-47958-Rev. B, 15-Apr-96 Si4431DY , ­25 0 25 50 75 100 125 150 TJ ­ Junction Temperature (_C) 11 Si4431DY
Temic Semiconductors
Original

S-49534

Abstract: Si4431DY Si4431DY P-Channel 30-V (D-S) Rated MOSFET Product Summary VDS (V) rDS(on) (W) 0.040 @ VGS = ­10 V "5.8 0.070 @ VGS = ­4.5 V ­30 ID (A) "4.5 S S S SO-8 S 1 8 D S , Siliconix S-49534-Rev. C, 06-Oct-97 3-1 Si4431DY Specifications (TJ = 25_C Unless Otherwise Noted , v 300 ms, duty cycle v 2%. 3-2 Siliconix S-49534-Rev. C, 06-Oct-97 Si4431DY Typical , 50 75 100 125 150 TJ ­ Junction Temperature (_C) 3-3 Si4431DY Typical
Temic Semiconductors
Original
S-49534 S-49534--R
Abstract: Tem ic Si4431DY Semiconductors P-Channel 30-V (D-S) Rated MOSFET Product Sum m ary VDS(V) r DS(on) (£2) Id (A) 0.040 @VG = -10 V s ±5.8 0.070 @ VG = -4.5 V s 30  , -Oct-97 3-1 Tem ic Si4431DY Semiconductors Specifications (Tj = 25°C Unless Otherwise Noted , Siliconix S-49534â'"Rev. C, 06-Oct-97 Tem ic Si4431DY Semiconductors Typical Characteristics , Tem ic Si4431DY Semiconductors Typical Characteristics (25 °C Unless O therwise Noted) 0 -
OCR Scan

4431 SOIC-8

Abstract: 4431 mosfet Si4431DY P-Channel Logic Level PowerTrench MOSFET General Description Features This , Marking Device Reel Size Tape width Quantity 4431 Si4431DY 13'' 12mm 2500 units 2001 Fairchild Semiconductor International Si4431DY Rev A Si4431DY January 2001 Symbol , . Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% Si4431DY Rev A Si4431DY Electrical Characteristics Si4431DY Typical Characteristics 40 2 -ID, DRAIN CURRENT (A) -6.0V RDS(ON
Fairchild Semiconductor
Original
4431 SOIC-8 4431 soic8 CBVK741B019 F011 F63TNR F852

SI4431DY

Abstract: Si4431DY P-Channel Enhancement-Mode MOSFET Product Summary VDS (V) rDS(on) (W) 0.040 @ VGS = ­10 V "5.8 0.070 @ VGS = ­4.5 V ­30 ID (A) "4.5 S S S SO-8 S 1 8 D S , #5148). Siliconix S-47958-Rev. B, 15-Apr-96 1 Si4431DY Specifications (TJ = 25_C Unless , ; pulse width v 300 ms, duty cycle v 2%. 2 Siliconix S-47958-Rev. B, 15-Apr-96 Si4431DY , ­25 0 25 50 75 100 125 150 TJ ­ Junction Temperature (_C) 3 Si4431DY
Temic Semiconductors
Original

Si4431DY

Abstract: S-49534 Si4431DY Vishay Siliconix P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) ID (A) 0.040 @ VGS = ­10 V "5.8 0.070 @ VGS = ­4.5 V ­30 rDS(on) (W) "4.5 S S S SO-8 S , Number: 70151 S-49534-Rev. C, 06-Oct-97 www.siliconix.com S FaxBack 408-970-5600 1 Si4431DY , -49534-Rev. C, 06-Oct-97 Si4431DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS OTHERWISE NOTED , 408-970-5600 3 Si4431DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS OTHERWISE NOTED
Vishay Siliconix
Original
Abstract: Tem ic S e m i c o n d u c t o r s SÌ4431DY P-Channel Enhancement-Mode MOSFET Product Summary V d s (V) 30 TDS(on) (Q) 0.040 @ VGS = -10V 0.070 @ VGs = -4-5 V I d (A) ±5.8 ±4.5 SO-8 s [T s , 50 Unit °c/w Siliconix S-47958-Rev. B, 15-Apr-96 3-17 SÌ4431DY Specifications (Tj = , Siliconix S-47958-Rev. B, 15-Apr-96 Temic S e m i c o n d u c t o r s SÎ4431DY Typical , -Apr-96 3-19 SÍ4431DY Typical Characteristics (25 °C Unless Otherwise Noted) Temic S e m i c o n d u c -
OCR Scan

S-49534

Abstract: T E M IC Semiconductors SÌ4431DY P-Channel 30-V (D-S) Rated M O SF E T P rod uct S u m m a r y V DS(V) -30 r DS(on)(^) 0.040 @ V Gs =-10 V 0.070 @ Vos = -4.5 V I d (A) ±5.8 ±4.5 s s s , Siliconix 3-1 S-49534-Rev. C, C)6-Oct-97 SÌ4431DY Specifications (Tj = 25°C Unless Otherwise , Semiconductors SÌ4431DY Transfer Characteristics Typical C haracteristics (25 °C Unless O th e rw ise , Temperature (°C) Siliconix 3-3 S-49534-Rev. C, C)6-Oct-97 SÍ4431DY Typical Characteristics (25
-
OCR Scan

SI4431DY-T1

Abstract: Si4431DY 6 D G 4 5 D G Top View D Ordering Information: Si4431DY-T1 P-Channel MOSFET Si4431DY-T1-E3 (Lead (Pb)-Free) ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED , Si4431DY Vishay Siliconix P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V , /product/spice.htm Document Number: 70151 S-51455-Rev. D, 01-Aug-05 www.vishay.com 1 Si4431DY , Number: 70151 S-51455-Rev. D, 01-Aug-05 Si4431DY Vishay Siliconix TYPICAL CHARACTERISTICS (25
Vishay Siliconix
Original
70151

Si4948DY

Abstract: Si9948DY9430DY9433DY " SÌ9933DY 1 1 SÌ9947DY') SÌ9953DY4435DY SÌ4431DY4953DY9435DY " SÌ4947DY
-
OCR Scan
Si4948DY Si9948DY Si4946DY 9426DY 9926DY 9925DY 9956DY 4410DY 4412DY

P-channel power mosfet SO-8 30V 9.2A 20

Abstract: Siliconix Micro-8 SO-8 DPAK DPAK Si6435DQ Si6415DQ Si4431DY Si4435DY Vishay Siliconix Vishay
Summit Microelectronics
Original
IRF7413 IRL3803S IRFR110 IRFR120 IRFR120N IRF3710S P-channel power mosfet SO-8 30V 9.2A 20 Siliconix 100v P-Channel DPAK P-channel power mosfet SO-8 P-CHANNEL 45A TO-247 POWER MOSFET Vishay Siliconix IRF7603

WSL-2010-R040-F

Abstract: MAX1627 Si4431DY, or Motorola MMSF3P02HD 0.040, 1%, 1/2W resistor Dale WSL-2010-R040-F or IRC LR2010-01-R040-F Open
Maxim Integrated Products
Original
MAX1627 CoilCraft DO3316P-223 MAX1626 MAX1626/MAX1627 TPSE686M020R0150 593D686X0020E2W TPSE227M010R0100

I4936D

Abstract: 14431-D Si4431DY SÍ9430DY SÍ9435DY U p g ra d e *14431D Y -2 0 -3 0 -3 0 0.05 0.055 0,04 0.09 0.105 0.07 ± 5 .8
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OCR Scan
I4936D 14431-D 44I0D I4412D 9410DY 9936DY 9940DY
Abstract: 450 7 6 SYSTEM µP 5 R3 220k MAIN BATTERY 4.5V TO 10V Q1 Si4431DY R4 221k 1 , Q11 P-CHANNEL Si4431DY R11 221k 1% *SUMIDA CDRH125-10 *IRC LR2D1D-01-RQ33-F â'  SUMIDA , 18V Q11 P-CHANNEL Si4431DY R11 422k 1% + C2 1µF 13 VIN 9 4 6 3 CC 330pF Linear Technology
Original
LTC1558-3 3/LTC1558-5 LTC1558 LTC690/LTC691 LTC694/LTC695 LT1120

rtd pt100 interface to 8051

Abstract: 24V 20A SIEMENS battery charger Configured DC-DC Converter Si4431DY: High-Sided Load Switching Si4925DY: Bilateral Switching Little Foot , Motor control · Pumps · Heater control Si4431DY Si4425DY in a buck converter configuration High-Sided Load Switching The Si4431DY is a 30V P-channel single MOSFET ideal for many low voltage applications, including load switching. In the example descibed below, the Si4431DY is the main switching , Code 473-741 (Si4431DY) Typical Application: Typical Application: Direct gate drive Gate
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Original
rtd pt100 interface to 8051 24V 20A SIEMENS battery charger LM2560 smd 58a transistor 6-pin pic 16f84 PWM circuit scr control light intensity using 8051 OPA340PA ADS7816P 200KH OPA2337PA ADS7822P INA125UA
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