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| Part | Manufacturer | Description | Type | Ordering |
| Si1900DL | Vishay Intertechnology, Inc. | Dual N-Channel 30-V (D-S) MOSFET |
3 pages, |
Original | |
| SI1900DL | Vishay Siliconix | Dual N-Channel 30-V (D-S) MOSFET |
4 pages, |
Original | |
| SI1900DL-DS | Vishay Telefunken | DS-Spice Model for Si1900DL |
3 pages, |
Original | |
| Si1900DL SPICE Device Model | Vishay | Dual N-Channel 30-V (D-S) MOSFET |
3 pages, |
Original | |
| SI1900DL-T1 | Vishay Intertechnology, Inc. | Dual N-Channel 30-V (D-S) MOSFET |
3 pages, |
Original | |
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: SPICE Device Model Si1900DL Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET CHARACTERISTICS · N-Channel Vertical DMOS · Macro Model (Subcircuit Model) · Level 3 MOS · Apply for both Linear and Switching Application · Accurate over the -55 to 125°C Temperature Range · Model the Gate Charge , B, 28-Feb-05 www.vishay.com 1 SPICE Device Model Si1900DL Vishay Siliconix SPECIFICATIONS , S-50232Rev. B, 28-Feb-05 SPICE Device Model Si1900DL Vishay Siliconix COMPARISON OF MODEL WITH MEASURED ... | Original |
3 pages, |
Si1900DL Si1900DL abstract |
| Abstract: SPICE Device Model Si1900DL Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET CHARACTERISTICS · N-Channel Vertical DMOS · Macro Model (Subcircuit Model) · Level 3 MOS · Apply for both Linear and Switching Application · Accurate over the -55 to 125°C Temperature Range · Model the Gate , www.vishay.com 1 SPICE Device Model Si1900DL Vishay Siliconix SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE , Si1900DL Vishay Siliconix COMPARISON OF MODEL WITH MEASURED DATA (TJ=25°C UNLESS OTHERWISE NOTED ... | Original |
3 pages, |
Si1900DL Si1900DL abstract |
| Abstract: SPICE Device Model Si1900DL Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET CHARACTERISTICS · N-Channel Vertical DMOS · Macro Model (Subcircuit Model) · Level 3 MOS · Apply for both Linear and Switching Application · Accurate over the -55 to 125°C Temperature Range · Model the Gate , www.vishay.com 1 SPICE Device Model Si1900DL Vishay Siliconix SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE , Si1900DL Vishay Siliconix COMPARISON OF MODEL WITH MEASURED DATA (TJ=25°C UNLESS OTHERWISE NOTED ... | Original |
3 pages, |
Si1900DL Si1900DL abstract |
| Abstract: SPICE Device Model Si1900DL Dual N-Channel 30-V (D-S) MOSFET Characteristics · N-channel Vertical DMOS · Macro-Model (Sub-circuit) · Level 3 MOS · Applicable for Both Linear and Switch Mode · Applicable Over a -55 to 125°C Temperature Range · Models Gate Charge, Transient, and Diode , : 71496 1 SPICE Device Model Si1900DL Model Evaluation N-Channel Device (TJ=25°C Unless Otherwise , subject to production testing Siliconix 4/16/01 Document: 71496 2 SPICE Device Model Si1900DL ... | Original |
3 pages, |
Si1900DL Si1900DL abstract |
| Abstract: SPICE Device Model Si1900DL Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET CHARACTERISTICS · N-Channel Vertical DMOS · Macro Model (Subcircuit Model) · Level 3 MOS · Apply for both Linear and Switching Application · Accurate over the -55 to 125°C Temperature Range · Model the Gate Charge , B, 28-Feb-05 www.vishay.com 1 SPICE Device Model Si1900DL Vishay Siliconix SPECIFICATIONS , S-50232Rev. B, 28-Feb-05 SPICE Device Model Si1900DL Vishay Siliconix COMPARISON OF MODEL WITH MEASURED ... | Original |
4 pages, |
Si1900DL Si1900DL abstract |
| Abstract: Ordering Information: Si1900DL-T1 Si1900DL-T1-E3 (Lead (Pb)-Free) ABSOLUTE MAXIMUM RATINGS (TA = 25_C , Si1900DL Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS , Number: 71251 S-51614-Rev. E, 05-Sep-05 www.vishay.com 1 Si1900DL Vishay Siliconix , Voltage (V) Document Number: 71251 S-51614-Rev. E, 05-Sep-05 Si1900DL Vishay Siliconix TYPICAL , Gate-to-Source Voltage (V) www.vishay.com 3 Si1900DL Vishay Siliconix TYPICAL CHARACTERISTICS (25_C ... | Original |
4 pages, |
Si1900DL-T1 Si1900DL SI1900DL-T1-E3 marking code PB Si1900DL abstract |
| Abstract: Si1900DL New Product Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.480 @ VGS = 10 V 0.63 0.700 @ VGS = 4.5 V 0.52 , Si1900DL New Product Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter , Voltage (V) Document Number: 71251 S-02367-Rev. B, 23-Oct-00 Si1900DL New Product Vishay , 10 VGS Gate-to-Source Voltage (V) www.vishay.com 3 Si1900DL New Product Vishay ... | Original |
4 pages, |
Si1900DL Si1900DL abstract |
| Abstract: Si1900DL Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.480 @ VGS = 10 V 0.63 0.700 @ VGS = 4.5 V 0.52 SOT-363 SC-70 SC-70 , FR4 Board. Document Number: 71251 S-21374-Rev. C, 12-Aug-02 www.vishay.com 1 Si1900DL , : 71251 S-21374-Rev. C, 12-Aug-02 Si1900DL Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS , Gate-to-Source Voltage (V) www.vishay.com 3 Si1900DL Vishay Siliconix TYPICAL CHARACTERISTICS (25_C ... | Original |
4 pages, |
Si1900DL Si1900DL abstract |
| Abstract: Ordering Information: Si1900DL-T1 Si1900DL-T1-E3 (Lead (Pb)-Free) ABSOLUTE MAXIMUM RATINGS (TA = 25_C , Si1900DL Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS , Number: 71251 S-51614-Rev. E, 05-Sep-05 www.vishay.com 1 Si1900DL Vishay Siliconix , Voltage (V) Document Number: 71251 S-51614-Rev. E, 05-Sep-05 Si1900DL Vishay Siliconix TYPICAL , Gate-to-Source Voltage (V) www.vishay.com 3 Si1900DL Vishay Siliconix TYPICAL CHARACTERISTICS (25_C ... | Original |
5 pages, |
Si1900DL-T1 Si1900DL Si1900DL abstract |
| Abstract: Information: Si1900DL-T1-E3 (Lead (Pb)-free) Si1900DL-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE , Si1900DL Vishay Siliconix Dual N-Channel 30 V (D-S) MOSFET # FEATURES PRODUCT SUMMARY , www.vishay.com 1 Si1900DL Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter , Si1900DL Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 60 1.6 C - , Si1900DL Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.4 5 4 ID = 250 ... | Original |
5 pages, |
Si1900DL-T1-E3 Si1900DL Si1900DL abstract |
| Abstract: Si1900DL Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) 0.480 @ VGS = 10 V 0.63 0.700 @ VGS = 4.5 V D TrenchFETr Power , Number: 71251 S-51614-Rev. E, 05-Sep-05 www.vishay.com 1 Si1900DL Vishay Siliconix , Voltage (V) Document Number: 71251 S-51614-Rev. E, 05-Sep-05 Si1900DL Vishay Siliconix TYPICAL , Gate-to-Source Voltage (V) www.vishay.com 3 Si1900DL Vishay Siliconix TYPICAL CHARACTERISTICS (25_C ... | Original |
5 pages, |
Si1900DL-T1 Si1900DL Si1900DL abstract |
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| * Library of Siliconix subsidiary of Vishay, * $Revision: 1.0 $ * $Author: SRIPADA $ * $Date: 03 FEB 2006 $ *- *$ *Jan 26, 2005 *Doc. ID:76150, Rev. A .SUBCKT 2N7000KL 2N7000KL 2N7000KL 2N7000KL 4 1 2 M1 3 1 2 2 NMOS W=26124u L=0.50u M2 2 1 2 4 PMOS W=26124u L=0.95u R1 4 3 RTEMP 4.5E-1 CGS 1 2 24E-12 24E-12 24E-12 24E-12 DBD 2 4 DBD * .MODEL NMOS NMOS (LEVEL = 3 www.datasheetarchive.com/files/spicemodels/misc/siliconix.lib |
Spice Models | 04/07/2008 | 1556.57 Kb | LIB | siliconix.lib |
| Fairchild Part | Orderable | Industry Part | Manufacturer | Type | Family | Description |
| FDG6303N | FDG6303N Buy | SI1900DL Buy | Vishay Siliconix Inc | Close | Power MOSFET | Dual N-Channel Digital FET |
| FDG6317NZ | FDG6317NZ Buy | SI1900DL-T1 Buy | Vishay Intertechnology Inc | Close | Power MOSFET | Dual 20V N-Channel PowerTrench MOSFET |
| FDG6317NZ | FDG6317NZ Buy | SI1900DL-T1-E3 Buy | Vishay Intertechnology Inc | Close | Power MOSFET | Dual 20V N-Channel PowerTrench MOSFET |
| FDG8850NZ | FDG8850NZ Buy | SI1900DL-T1 Buy | Vishay Intertechnology Inc | Close | Power MOSFET | 30V Dual N-Channel PowerTrench MOSFET |
| FDG8850NZ | FDG8850NZ Buy | SI1900DL-T1-E3 Buy | Vishay Intertechnology Inc | Close | Power MOSFET | 30V Dual N-Channel PowerTrench MOSFET |