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Part : SGSP367 Supplier : STMicroelectronics Manufacturer : ComSIT Stock : 800 Best Price : - Price Each : -
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SGSP369 Datasheet

Part Manufacturer Description PDF Type
SGSP369 N/A Semiconductor Master Cross Reference Guide Scan
SGSP369 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
SGSP369 STMicroelectronics Shortform Data Book 1988 Scan

SGSP369

Catalog Datasheet MFG & Type PDF Document Tags

SGSP369

Abstract: diode sg 5 ts r= Z SG S-TtiO M SO N lüítlDffl®lilLi©ir[M!lD(gi SGSP364 SGSP369 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS T YPE SGSP364 SGSP369 V DSS RDS(on) 1.5 Id 5 A 5 A 450 V 500 V fi , RATINGS > SG SP364 450 450 ±20 5 3 20 20 100 0.8 - 6 5 to 150 150 SGSP369 500 500 V V V A A A A W W , SGSP364 - SGSP369 THERM AL DATA Rthj . C ase Therm al resistance junction-case TL M axim um lead tem , breakdow n voltage lD = 250 mA for SG SP364 for SGSP369 Vg s = 0 450 500 250 1000 ±100 V V HA ¡1A
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diode sg 5 ts

SGSP369

Abstract: SGSP364 /= 7 SGS-THOMSON SGSP364 SGSP369 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE SGSP364 SGSP369 V DSS ^D S(on) *D 450 V 500 V 1.5 fl 1.5 ß 5 A 5 A · HIGH SPEED SWITCHING , DIAGRAM GO- o s ABSOLUTE MAXIMUM RATINGS VDS V qgr SGSP364 450 450 ±20 5 3 SGSP369 500 , SGSP369 THERMAL DATA Rthj . case Thermal resistance junction-case TL Maximum lead temperature for , - 250 ^A for SGSP364 for SGSP369 V gs = 0 450 500 250 1000 ± 100 V V HA HA lDss Zero gate voltage
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SGSP369

Abstract: - 3 CI - 1 3 SGSP364 â' SGSP369 t h o m s o n N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE SGSP364 SGSP369 VDss 450 V 500 V f*DS(on) 1.5 Ã2 1.5 n 5 A 5 A â , - SGSP364 SGSP369 V ds Drain-source voltage (VQS = 0) 450 500 V VDGR Drain-gate , for SGSP369 lDSS Zero gate voltage drain current (VGS = 0) VDS= Max Rating VDS= Max Rating , (Continued) Parameters SGSP364 - SGSP369 - G S-THOMSON Test Conditions Min. Typ. Max
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003QQ05

DSS89

Abstract: SP369 SGSP369 at 100V 2A T: b US/DIV 9: 7 nC /div 7a) SGSP362 at 50V 5A SGSP369 ar 100V
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DSS89

SGSP369

Abstract: TSD4M450V 500 1.5 2.5 ISOWATT 220 IRF830FI 3 35 2.7 800 500 1.5 2.5 TO 220 SGSP369 5 100 3 1000 500 1.1 4.4 TO
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IRF831 IRF831FI IRF843 IRF841 IRF841FI SGSP474 TSD4M450V SGSP479 IRFP450fi IRF840FI SGSP239 IRF843FI

TP8N10

Abstract: th15n20 SGSP363 SGSP364 SGSP367 SGSP368 SGSP369 SGSP381 SGSP382 SGSP461 SGSP462 SGSP471 SGSP472 SGSP473 SGSP474 , SGSP341 SGSP341 SGSP351 SGSP358 SGSP358 SGSP361 SGSP362 SGSP363 SGSP364 SGSP367 IRF830 SGSP369 SGSP381
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TP3055A TP8N10 th15n20 TH7N50 TP4N10 TP10N05 IRFP350FI 2SK295 2SK296 2SK308 2SK310 2SK311 2SK312

SGSP369

Abstract: . 8a) and 8b) - '/ g. Id· Vos waveforms for SGSP369 SGSP3M at 10QV 2A 7a) SGSP362 at 50V 5A SGSP369 at 100V 8 a) 2A " 7#, MiramnenHHics 80 ¿ZfJ SGS-THOMSON Physically this point
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substitu bipolar transistors

Abstract: 7A 0.3 ohm 1 1 0 x 1 1 0 m ils 2 SGSP369 500V 5A 1.75ohm 156x 15 6m ils2 6/12 ¿ = 7 SCS-THOMSON , C T I M W I llB S 70 Fig. 22 - dlo/dt as a function o f Vj (RG= 25(1) for SGSP369 , transition, as a function of V, for an SGSP369 switching 4A at 200 V. Fig. 30 On-state energy values a
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substitu bipolar transistors

TSD4M450V

Abstract: SGSP479 500 1.5 2.5 ISOWATT 220 IRF830FI 3 35 2.7 800 500 1.5 2.5 TO 220 SGSP369 5 100 3 1000 500 1.1 4.4 TO
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IRF453 IRFP453FI BUZ41A STHV82 SGS100MA010D1 TSD4M250V tsd4m45 tsd4m250 TSD4M351V BUZ41 SGSP574 IRFP453 IRF451 IRFP451

sgsp311

Abstract: sgsp531 rent voltages and die sizes. SGSP311 110V 7A 0.3 ohm 1 1 0 x 1 1 0 m ils 2 SGSP369 500V 5A 1.75ohm 1 , Fig. 22 - dlp/dt as a function of Vi (RG= 250) for SGSP369 G-5901 Fig. 24 - Shows the effect of , V| for an SGSP369 switching 4A at 200 V. Fig. 30 On-state energy values a function of the drain
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sgsp531 sgsp331 10a 400v bipolar transistor

IRF732P

Abstract: IRF722P SGSP341 SGSP342 SGSP351 SGSP357 SGSP358 SGSP361 SGSP362 SGSP363 SGSP364 SGSP367 SGSP368 SGSP369 SGSP381 , SGSP358 SGSP358 SGSP361 SGSP362 SGSP363 SGSP364 SGSP367 IRF830 SGSP369 SGSP381 SGSP382 SGSP461 SGSP462
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SGSP321 IRF540FI BUZ71 SGSP3055 IRF732P IRF722P 1rfp450 MTP20N10 irf522p 2SK313 2SK319 2SK320 2SK324 2SK345 2SK346

EC35 TRANSFORMER

Abstract: SGSP369 simplify drive circuit requirements, a TO-220 power MOS SGSP369 is utilized for the power switch. This
STMicroelectronics
Original
UC1842 EC35 TRANSFORMER Ferroxcube 3C8 HIGH FREQUENCY Transformer ec35 core ferroxcube Core Ferroxcube EC35-3C8 EC35 switching power 95VAC 130VAC 117VAC EC-35/3C8

EC35 TRANSFORMER

Abstract: Ferroxcube 3C8 simplify drive circuit requirements, a TO-220 power MOS SGSP369 is utilized for the power switch. This
STMicroelectronics
Original
EC35-3c8 core 3c8 flyback, discontinuous mode ferroxcube toroid 204T50-3C8 AN-247

mos Turn-off Thyristor

Abstract: SiC BJT 3 - V(Bß) oss - 500V SGSP369 rZ Z SGS-THOMSON " 7A. SWITCHING CHARACTERISTICS Figures 1 and 3
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mos Turn-off Thyristor SiC BJT pnp transistor 1000v BJT Gate Drive circuit fast thyristor 1000V MOS Controlled Thyristor

irfp 950

Abstract: tsd4m450v 4.5 74 2.7 800 500 1.5 2.5 ISOWATT 220 IRF830FI 3 35 2.7 800 500 1.5 2.5 TO 220 SGSP369 5 100 3 1000
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MTP3N60 MTP6N60 irfp 950 transistor BUZ45 BUZ74 IRF 950 IRFP 740 MTH6N60 IRF842 IRF842FI IRF840 BUZ354 BUZ45A SGSP579

pnp transistor 1000v

Abstract: mos Turn-off Thyristor - V(BRj d s s ~ 500V SGSP369 SCS-THOMSON 144 Photo 4 - V(BRj DSS = 500V
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1000V 2A BJT applications of mos controlled thyristor

ISOWATT-220

Abstract: BU210A BUZ41A IRF830 IRF830FI SGSP369 IRF842 IRF842FI IRF840 IRF840FI BUZ354 BUZ45A SGSP479 SGSP579 BUZ353 BUZ45
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ISOWATT220 BU210A ISOWATT-220 mtp15n05 ISOWATT218 MTP15N05L MTP15N05LFI STLT19 STLT19FI

ISOWATT220

Abstract: ISOWATT218 TO-220 TO-218 TO-218 IRF832FI BUZ41A IRF830 IRF830FI SGSP369 IRF842 IRF842FI IRF840 IRF840FI
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IRF452 IRFP452 IRFP452FI IRF450 IRFP450 SGS30MA050D1

sgs*P381

Abstract: BR 1300 IRF820 BUZ42 IRF832 BUZ41A IRF830 SGSP369 IRF842 IRF840 MTP3N60 MTP6N60 iD(max) P.o. (A) (W
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sgs*P381 BR 1300 bu245a IRFp150 To3 package SGSP222 SGSP201 SGSP230 SGSP322 BUZ10A BUZ71A

ISS 355

Abstract: sgs*P381 IRF843 IRF841 BUZ74A IRF822 SGSP319 BUZ74 IRF820 BUZ42 IRF832 BUZ41A IRF830 SGSP369 IRF842 IRF840 MTP3N60
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ISS 355 MTP3055AFI SGSP591 IRFZ22 IRFZ20 STLT29 BUZ10 BUZ11A BUZ11

D773

Abstract: P369 /= 7 SGS-THOMSON SGSP364 SGSP369 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE SGSP364 SGSP369 V DSS ^D S(on) *D 450 V 500 V 1.5 fl 1.5 ß 5 A 5 A · HIGH SPEED SWITCHING , DIAGRAM GO- o s ABSOLUTE MAXIMUM RATINGS VDS V qgr SGSP364 450 450 ±20 5 3 SGSP369 500 , SGSP369 THERMAL DATA Rthj . case Thermal resistance junction-case TL Maximum lead temperature for , - 250 ^A for SGSP364 for SGSP369 V gs = 0 450 500 250 1000 ± 100 V V HA HA lDss Zero gate voltage
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SGSP3B8/P369 D773 P369 diode sg 46 P469 diode sg 69 SGSP368/P369 SGSP468/P469 SGSP568/P569 SP368 SP468 SP568

IRFP 740

Abstract: IRF 810 simplify drive circuit requirements, a TO-220 power MOS SGSP369 is utilized for the power switch. This
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IRF 810 IRF 426 irf transistors irfp 730 BUZ 82 Diodes BUZ C 840
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