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PHPT60603NYX NXP Semiconductors PHPT60603NY - 60V, 3 A NPN high power bipolar transistor ri Buy
PHPT61003PYX NXP Semiconductors PHPT61003PY - 100 V, 3A PNP high power bipolar transistor ri Buy
PHPT61002PYCX NXP Semiconductors PHPT61002PYC - 100 V, 2 A PNP high power bipolar transistor ri Buy

SCHEMATIC WITH IGBTS

Catalog Datasheet Results Type PDF Document Tags
Abstract: solar inverter applications. Co-packaged with ultrafast soft recovery diodes, the new family of IGBTs , www.irf.com 10158FS 10158FS Application Specific 600V Trench IGBTs Application Schematic 100V DirectFET , losses compared to previous generation IGBTs. ·175°C maximum junction temperature. ·Square Reverse Bias , package. Reduce Power Dissipation Up to 30% in UPS and Solar Inverter Applications With IR's Application-Specific 600V Trench IGBTs International Rectifier's new family of 600V insulated gate bipolar ... Original
datasheet

2 pages,
235.62 Kb

solar inverter circuit IGBT DRIVER SCHEMATIC igbts inverter circuit 200v to 100v IRS2184S Self-Oscillating Full-Bridge full-bridge driver 600V IRGP4063D SOLAR INVERTER SCHEMATIC POWER SUPPLY WITH IGBTS datasheet abstract
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Abstract: Generation of IGBTs with MOSFETs at 150kHz Presented at Powersystems 98 Santa Clara Personal use of , Performance Comparison of the New Generation of IGBTs with MOSFETs at 150kHz Ken Dierberger Advanced Power , the schematic of the power conversion section of the converter. A pair of IGBTs from three , a new generation of IGBT is now offering near MOSFET switching speed with the promise of 150kHz hard-switched operation. This paper will present data collected from the operation of these new IGBTs in a ... Original
datasheet

6 pages,
85.19 Kb

IGBT power loss comparison of IGBT and MOSFET mosfet igbt drivers theory igbt 100w APT9805 IGBT DRIVER SCHEMATIC chip IGBT THEORY OPERATION AND APPLICATIONS SCHEMATIC WITH IGBTS IGBT DRIVER SCHEMATIC IGBT THEORY AND APPLICATIONS MOSFET IGBT THEORY AND APPLICATIONS APT9805 abstract
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Abstract: designed to drive n-channel IGBTs or MOSFETs in a half-bridge configuration up to 500VDC 500VDC. Power supply and motor control inverters can be configured for voltages up to 230VAC 230VAC using the HVIC, IGBTs and a , evaluate the features of the SP601 SP601 are shown in the simplified schematic. The recommended load is largely resistive so that the largest current component will flow through the IGBTs, IGT1 and IGT2. The flyback , with motor or transformer loads, while limiting the current carried by the lower rated flyback diodes ... Original
datasheet

1 pages,
28.45 Kb

igbt transformer driver IGBT DRIVER SCHEMATIC 3 PHASE 15V flyback 230V circuits motor control HARRIS SP601 transformer from 230V AC to 15V IGBT DRIVER SCHEMATIC 500VDC AN9105 RUR860 3kw inverter AN9105 abstract
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Abstract: generation of Intersil IGBTs (SMPS IGBTs) provides switch mode power designers with these same (AN98 benefits. The evaluation results of replacing power MOSFETs 84) with SMPS IGBTs in a 1.25kW full-bridge , can now Corpo- replace MOSFETs with Intersil's SMPS IGBTs and improve the ration, cost, power , (die size 0.281in x 0.286in), with HGTG12N60A4 HGTG12N60A4 SMPS IGBTs die size-3 (0.186in x 0.126in) are summarized in Figures 3 and 4. With both the MOSFETs and IGBTs, the power supply latched off when a short ... Original
datasheet

6 pages,
336.44 Kb

SCHEMATIC WITH IGBTS computer smps circuit irfp460 power supply applications IRFP460 SWITCHING FREQUENCY AN7523 equivalent 450w smps full bridge mosfet smps 230 AC to 5V dc smps m1 diode AN-7523 schematic SMPS 12V dc-dc converter with irfp460 AN-7523 abstract
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Abstract: IGBTs have been providing motor drive circuit designers with the ability to increase power density and , supply designers can now replace MOSFETs with Intersil's SMPS IGBTs and improve the cost, power density , HGTG12N60A4 HGTG12N60A4 SMPS IGBTs die size-3 (0.186in x 0.126in) are summarized in Figures 3 and 4. With both the , SMPS IGBTs, one replaces the IRFP460 IRFP460 MOSFET with an HGTG12N60A4D HGTG12N60A4D IGBT. Replace the Schottky , IGBTs, one replaces the IRFP460 IRFP460 MOSFETs with HGTG12N60A4 HGTG12N60A4 IGBTs. Replace the Schottky rectifiers with a ... Original
datasheet

5 pages,
66.96 Kb

schottky diodes Anti parallel freewheeling diode 4.5A schematic SMPS 12V 10A irfp460 complementary IRFP460 IRFP460 APPLICATION NOTE irfp460 dc motor circuit transistor smps circuit smps 12v SCHEMATIC WITH irfp460 irfp460 mosfet dale RH-50 AN9884 AN9884 abstract
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Abstract: IGBTs have been providing motor drive circuit designers with the ability to increase power density and , supply designers can now replace MOSFETs with Intersil's SMPS IGBTs and improve the cost, power density , HGTG12N60A4 HGTG12N60A4 SMPS IGBTs die size-3 (0.186in x 0.126in) are summarized in Figures 3 and 4. With both the , SMPS IGBTs, one replaces the IRFP460 IRFP460 MOSFET with an HGTG12N60A4D HGTG12N60A4D IGBT. Replace the Schottky , SMPS IGBTs, one replaces the IRFP460 IRFP460 MOSFETs with HGTG12N60A4 HGTG12N60A4 IGBTs. Replace the Schottky rectifiers ... Original
datasheet

5 pages,
66.41 Kb

make full-bridge SMPS smps 450 W SMPS IRFP460 APPLICATION NOTE 12V 10A SMPS zener cr9 SCHEMATIC POWER SUPPLY WITH IGBTS Full-bridge converter full-bridge SMPS IRFP460 transistor IRFP460 equivalent irfp460 mosfet schematic SMPS 12V AN9884 AN9884 abstract
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Abstract: Overall, the DS trench IGBTs is very rugged with excellent B B B B RBSOA capability. , See figure 7 for the schematic of the typical filter circuit. An inductor was placed in series with , Stop Trench IGBTs By Chiu Ng, Al Diy, Alberto Fernandez, Vijay Bolloju Table of Contents Page IGBT performance improvements with Depletion Stop Trench structure .2 Breakdown Voltage of ultra-thin wafer Depletion Stop IGBTs ... Original
datasheet

9 pages,
168.48 Kb

trench power igbt AN1086 BVces IGBT cross 100C jfet 400V depletion SCHEMATIC WITH IGBTS short circuit tracer schematic bipolar transistor tester IGBT THEORY AND APPLICATIONS high voltage pnp transistor 700v bj transistor igbt tesec AN-1086 AN-1086 abstract
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Abstract: Improved IGBTs with Fast Switching Speed And High-Current Capability Application Note December , a series of IGBTs (with forward-blocking voltage capabilities of 400-600V), the fall time can be , versus iA for each device structure. It should be noted that IGBTs with the modified structure can block , SCHEMATIC DIAGRAM OF ORIGINAL IGBTs STRUCTURE K RS G SHUNTING RESISTANCE npn pnp A , , we have achieved anodecurrent fall times as low as 100ns in IGBTs with latching currents as high as ... Original
datasheet

5 pages,
121.13 Kb

SCHEMATIC WITH IGBTS MOS-Gated Thyristor AN75 AN-7505 AN-7505 abstract
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Abstract: Improved IGBTs with Fast Switching Speed And High-Current Capability Application Note December , irradiation, as well as heavy metal doping. For a series of IGBTs (with forward-blocking voltage capabilities , with rapid gate voltage turnoff. Modified Structure A schematic diagram of the original IGBT , device structure. It should be noted that IGBTs with the modified structure can block high voltage only , as low as 100ns in IGBTs with latching currents as high as 50A for a 0.09cm2 chip area. We have ... Original
datasheet

5 pages,
326.47 Kb

fairchild low power transistor 1977 AN-7505 AN-7505 abstract
datasheet frame
Abstract: Improved IGBTs with Fast Switching Speed And High-Current Capability Application Note December , , as well as heavy metal doping. For a series of IGBTs (with forward-blocking voltage capabilities of , , in which tF, is plotted versus iA for each device structure. It should be noted that IGBTs with the , ) SUBSTRATE A tF - 90% TO 10% DECAY TIME (µs) FIGURE 1A. SCHEMATIC DIAGRAM OF ORIGINAL IGBTs STRUCTURE , IGBTs with latching currents as high as 50A for a 0.09cm2 chip area. We have described the trade-off ... Original
datasheet

4 pages,
45.13 Kb

MOS-Gated Thyristor AN8603 AN8603 abstract
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Datasheet Content (non pdf)

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MOSFETs vs IGBTs: What's The Difference? Jack Takesuye Scott Deuty Motorola Inc. 2.7 power: (1) By combining the low conduction loss of a BJT with the switching speed of a drive requirements. Because the structure of both devices are so similar, the change to IGBTs may be made without having to redesign the gate drive circuit. IGBTs, like MOSFETs are transconductance BACK button to return to reduced size Figure 1: Cross-Section and Equivalent Schematic of an IGBT
www.datasheetarchive.com/files/motorola/design-n/ppd/html/psvol2-1/art01.htm
Motorola 25/11/1996 8.18 Kb HTM art01.htm
Application Note CAR IGNITION WITH IGBTS allows the production of IGBTs with a square RBSOA whose voltage boundary is the BV CES , and , logic level IGBTs, such as the STGP10N50L STGP10N50L STGP10N50L STGP10N50L, can be turned on with a gate voltage of as little as IGBTs, techniques such as electron beam irradiation and doping with lifetime killers have been structure, the switching behaviour of IGBTs in some aspects looks like a Power MOSFET, with the
www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/3722.htm
STMicroelectronics 20/10/2000 22.46 Kb HTM 3722.htm
WITH IGBTS AN484 AN484 AN484 AN484 Document Format Size Document Number Date Update Pages APPLICATION NOTE [ CAR IGNITION WITH IGBTS by M. Melito AN484/1293 AN484/1293 AN484/1293 AN484/1293 1/9 ABSTRACT IGBTs are used technology allows the production of IGBTs with a square RBSOA whose voltage boundary is the BV ,"Switching with IGBTs: how to obtain better performances" Information furnished is believed to be physics and structure of the device, and highlights the characteristics which make IGBTs
www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/3722-v1.htm
STMicroelectronics 25/05/2000 21.82 Kb HTM 3722-v1.htm
FOR INTEGRATION WITH IGBTS AN472 AN472 AN472 AN472 Document Format Size Document Number Date Update Text Format APPLICATION NOTE 1/6 AN472/0692 AN472/0692 AN472/0692 AN472/0692 DRIVE CIRCUIT FOR INTEGRATION WITH IGBTS by C. Licitra, S. Musumeci, A. Raciti, A. Galluzzo, R. Letor, M. Melito ABSTRACT lGBT capability. The present paper deals with the problems that concern the turn-on, turn-off and short-circuit switching are discussed, with the aim of analysing and optimising the lGBT behaviour. In
www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/3665-v1.htm
STMicroelectronics 25/05/2000 17.44 Kb HTM 3665-v1.htm
WITH IGBTS AN472 AN472 AN472 AN472 Document Format Size Document Number Date Update Pages APPLICATION NOTE 1/6 AN472/0692 AN472/0692 AN472/0692 AN472/0692 DRIVE CIRCUIT FOR INTEGRATION WITH IGBTS by C. Licitra, S. Musumeci, A. electronic equipment due their high power handling capability. The present paper deals with the problems phenomena occurring during the switching are discussed, with the aim of analysing and optimising the stage. The output stage is a push-pull scheme with separated turn-on and turn-off paths for driving the
www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/3665.htm
STMicroelectronics 20/10/2000 17.89 Kb HTM 3665.htm
Motorola's advanced 600 and 1200V IGBTs with matched soft free wheeling diodes Package gives benefits of an , converter and brake power circuits in one package Utilizes Motorola's advanced 600 and 1200V IGBTs with applications. Available is a schematic of a wide range input voltage power supply designed to work with input Processing Units that address virtually every aspect of motor control with great flexibilty . MOS Gate been developed for use with Optocouplers. This gate driver has its undervoltage lockout designed to
www.datasheetarchive.com/files/motorola/design-n/ppd/html/motion.htm
Motorola 25/11/1996 37.56 Kb HTM motion.htm
Intensity Discharge Lamp with the UCC3305 UCC3305 UCC3305 UCC3305 HID Lamp Controller DN-65 DN-65 DN-65 DN-65 Simple Techniques for Isolating and Correcting Common Application Problems with UC3625 UC3625 UC3625 UC3625 New Chip Pair Provides Isolated Drive for High Voltage IGBTs UC3727 UC3727 UC3727 UC3727 U-143C U-143C U-143C U-143C New Chip Pair Provides Isolated Drive for High Voltage IGBTs Boost Power Factor Corrector Design with the UC3853 UC3853 UC3853 UC3853 DN-77 DN-77 DN-77 DN-77
www.datasheetarchive.com/files/unitrode/catalog/apps/apps_prt.htm
Unitrode 30/06/1998 58.61 Kb HTM apps_prt.htm
UC3726 UC3726 UC3726 UC3726 / 27 New Chip Pair Provides Isolated Drive for High Voltage IGBTs Multi-State Charge Algorithm with the UC3909 UC3909 UC3909 UC3909 Switchmode Lead-Acid Battery Charger Controller UC3853 UC3853 UC3853 UC3853 Boost Power Factor Corrector Design with the UC3853 UC3853 UC3853 UC3853 with the UCC3305 UCC3305 UCC3305 UCC3305 HID Lamp Controller U-163 U-163 U-163 U-163 UC3902 UC3902 UC3902 UC3902 Application Problems with UC3625 UC3625 UC3625 UC3625 Brushless DC Motor Drives DN-51 DN-51 DN-51 DN-51
www.datasheetarchive.com/files/unitrode/catalog/apps/apps_pub.htm
Unitrode 21/05/1998 50.32 Kb HTM apps_pub.htm
Product Line HEXFET Power MOSFETs Integrated Circuits IGBTs Diodes SCR Relays Pow IR train associated with an electron is 1.602x10 -l9 C. Current: charge in motion (electrons). Current is Voltage is higher on the end of the resistor that sees the current first. Figure 1 shows two schematic the flow. Figure 1. Schematic representations of a resistor The on-resistance (R DS(on occur between any two points with different potentials. All semiconductor devices have capacitance
www.datasheetarchive.com/files/international-rectifier/technical-info/guide/circuit.html
International Rectifier 24/07/2000 22.21 Kb HTML circuit.html
designed an advanced family of IGBTs, the PowerMESH ] IGBTs, with outstanding perfomances. The CO-PACKAGED WITH TURBOSWITCH ] ANTIPARALLEL DIODE DESCRIPTION [ INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V CES not authorized for use as critical components in life support devices or systems with out express
www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/6704-v1.htm
STMicroelectronics 25/05/2000 9.01 Kb HTM 6704-v1.htm