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Part Manufacturer Description Datasheet BUY
LT1158IN#TRPBF Linear Technology IC HALF BRDG BASED MOSFET DRIVER, PDIP16, 0.300 INCH, PLASTIC, DIP-16, MOSFET Driver visit Linear Technology - Now Part of Analog Devices
LT1161CS Linear Technology IC 4 CHANNEL, BUF OR INV BASED MOSFET DRIVER, PDSO20, SO-20, MOSFET Driver visit Linear Technology - Now Part of Analog Devices
LTC4444-5IMS8E#TRPBF Linear Technology IC 1.75 A HALF BRDG BASED MOSFET DRIVER, PDSO8, LEAD FREE, PLASTIC, MSOP-8, MOSFET Driver visit Linear Technology - Now Part of Analog Devices
LT1158CN#TR Linear Technology IC HALF BRDG BASED MOSFET DRIVER, PDIP16, 0.300 INCH, PLASTIC, DIP-16, MOSFET Driver visit Linear Technology - Now Part of Analog Devices
LT1158IS Linear Technology IC 15 A HALF BRDG BASED MOSFET DRIVER, PDSO16, PLASTIC, SOL-16, MOSFET Driver visit Linear Technology - Now Part of Analog Devices
LT1158CN#TRPBF Linear Technology IC HALF BRDG BASED MOSFET DRIVER, PDIP16, 0.300 INCH, PLASTIC, DIP-16, MOSFET Driver visit Linear Technology - Now Part of Analog Devices

SAMSUNG SEMICONDUCTOR

Catalog Datasheet MFG & Type PDF Document Tags

equivalent of SL 100 NPN Transistor

Abstract: Transistor SAMSUNG SEMICONDUCTOR INC 14E D » 711, 4142 OOOTbSO fl KSD5005 COLOR TV , = -1 .6 A , Vcc= 2 0 0 V R L=66.7fl SAMSUNG SEMICONDUCTOR 225 SAMSUNG SEMICONDUCTOR , CURRENT S X SAMSUNG SEMICONDUCTOR 226 SAMSUNG SEMICONDUCTOR INC IME 0 7^4142 , SEMICONDUCTOR 227 SAMSUNG SEMICONDUCTOR I NC IME D I 711, 4142 00G?7Sb 2 , 0 « SAMSUNG SEMICONDUCTOR 331 SAMSUNG SEMICONDUCTOR I NC IME D I 711,4142 0 0
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equivalent of SL 100 NPN Transistor Transistor transistor 711 transistor a 92 a 331 T-53- GQG77

200V transistor npn 2a

Abstract: d 331 TRANSISTOR equivalent SAMSUNG SEMICONDUCTOR INC IME O 0007bM7 fl I KSD5004 COLOR TV HORIZONTAL , MHz pS SAMSUNG SEMICONDUCTOR 222 SAMSUNG SEMICONDUCTOR INC 14ED I 7< lfa»llMa , TIME SAFE OPERATING AREA , \ \ -V s \ V A\ SAMSUNG SEMICONDUCTOR 224 SAMSUNG SEMICONDUCTOR INC IM E D , -92S Unit: mm TO-92L Unit: mm 0 « SAMSUNG SEMICONDUCTOR 331 SAMSU NG SEMICONDUCTOR
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200V transistor npn 2a d 331 TRANSISTOR equivalent Q007t Samsung Semiconductor samsung tv

20A SOT-23

Abstract: SAMSUNG SEMICONDUCTOR INC 14E O 0007S31 Q I KSC1096 NPN EPITAXIAL SILICON , SEMICONDUCTOR 106 SAMSUNG SEMICONDUCTOR INC 1*»E 0 0007532 S | KSC1096 STATIC , TEMPERATURE SAMSUNG SEMICONDUCTOR lor SAMSUNG SEMICONDUCTOR INC IME O I 7=11,4142 , TO-92L Unit: mm 0 « SAMSUNG SEMICONDUCTOR 331 SAMSUNG SEMICONDUCTOR INC 14E , -220 $3.61 Unit: mm g K SAMSUNG SEMICONDUCTOR 332 SAMSUNG SEMICONDUCTOR INC i4 E O
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20A SOT-23 KSA634

SAMSUNG CHIP CAPACITOR

Abstract: L4145 SAMSUNG SEMICONDUCTOR INC OH D Ë J 7 1 L 4145 0 0 0 S Û 3 0 0 T "T " 7 H 3 KS5311 , SAMSUNG SEMICONDUCTOR 229 SAMSUNG SEMICONDUCTOR INC 05 D E | 7 ^ 4 1 4 5 UQOSflBl 5 . , KHz Freq 31 33 35 g|JSAMSUNG SEMICONDUCTOR 230 ^ ^ ^ ^ SAMSUNG , Currently available types: KS5311A: Cuckoo's Waits. SAMSUNG SEMICONDUCTOR 231 SAMSUNG , SEMICONDUCTOR 0894 A " 07 255 SAMSUNG SEMICONDUCTOR INC DEE D 7U414E 0005055 5
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SAMSUNG CHIP CAPACITOR L4145 ks531 74145 diagram

samsung tv

Abstract: d 331 Transistor SAMSUNG SEMICONDUCTOR INC 1ME D | V 'lb m ia 0007S40 1 | KSC1520 NPN EPITAXIAL , CLASSIFICATION Classification hFE R 40-80 O 70-140 Y 120-240 SAMSUNG SEMICONDUCTOR 115 SAMSUNG , s £ 0 60 «0 160 W C ). CASE TEMPERATURE SAMSUNG SEMICONDUCTOR 116 SAMSUNG , 0.60 TO-92S Unit: mm TO-92L Unit: mm 0 « SAMSUNG SEMICONDUCTOR 331 SAMSU NG , TO-220 $3.61 Unit: mm g K SAMSUNG SEMICONDUCTOR 332 SAMSUNG SEMICONDUCTOR INC
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d 331 Transistor G007S41 00077S7

transistor

Abstract: Samsung Semiconductor r 7 [ SAMSUNG SEMICONDUCTOR INC m e o § 7^4142 0007am, i | MMBC1623L3 , Marking SAMSUNG SEMICONDUCTOR 516 SAMSUNG SEMICONDUCTOR INC D | T 'ltim a , CAPACITANCE k (mA), COLLECTOR CURRENT Ves (V), COLLECTOR-BASE VOLTAGE SAMSUNG SEMICONDUCTOR 517 SAMSUNG SEMICONDUCTOR I NC 14E D 7 ^ 4 1 4 5 0007413 S T 7 |- PACKAGE DIMENSIONS TO-92 Unit: mm SAMSUNG SEMICONDUCTOR 683 SAMSUNG SEMICONDUCTOR INC 14E D
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100MH 00G7247 GGD7415
Abstract: SAMSUNG SEMICONDUCTOR INC MPSA55 14E D I 71fc4142 0 0 0 7 3 t i 4 7 PNP EPITAXIAL , SEMICONDUCTOR 634 SAMSUNG SEMICONDUCTOR I NC MPSA55 14E D | 7^4142 000731,5 1 , 300500 Ic (mA). COLLECTOR CURRENT SAMSUNG SEMICONDUCTOR 1 3 5 10 30 50 \ W0 300500 1000 Ic (mA), COLLECTOR CURRENT 635 SAMSUNG SEMICONDUCTOR I NC 14E D â  7^4145 0007413 5 T 7 |- PACKAGE DIMENSIONS TO-92 SAMSUNG SEMICONDUCTOR Unit: mm -
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T-29-21

MPSA10

Abstract: MPSA10 equivalent SAMSUNG SEMICONDUCTOR I NC l4 E 0 | 7« ,fcm Ma 0007341, 5 MPSA10 , V nA MHz 4 pF SAMSUNG SEMICONDUCTOR 6)6 SAMSUNG SEMICONDUCTOR INC 14E D , CAPACITANCE k: (mA), COLLECTOR CURRENT Vea (V). COLLECTOR-BASE VOLTAGE SAMSUNG SEMICONDUCTOR 617 SAMSUNG SEMICONDUCTOR I NC IME D 7 ^ 4 1 4 5 0007413 S T 7 |- PACKAGE DIMENSIONS TO-92 Unit: mm SAMSUNG SEMICONDUCTOR 683 SAMSUNG SEMICONDUCTOR INC 14E D
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MPSA10 equivalent 100KH

diode lt 238

Abstract: samsung SSE SAMSUNG SEMICONDUCTOR INC KSD5011 im e d I ao a?tta 4 N P N T R IF L t DIFFUSED P L A N , SEMICONDUCTOR 237 SAMSUNG SEMICONDUCTOR INC 1*E D | 7^4142 0007bt.3 t. KSD5011 N , SEMICONDUCTOR 238 SAMSUNG SEMICONDUCTOR INC KSD5011 N P N T R lP t c u i r r u s c u P L A N , E R A T U R E SAM SU NG SEMICONDUCTOR 239 SAMSUNG SEMICONDUCTOR INC IM E D , -92S Unit: mm TO-92L Unit: mm 0 « SAMSUNG SEMICONDUCTOR 331 SAMSUNG SEMICONDUCTOR
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diode lt 238 samsung SSE lt 332 diode T-33-11
Abstract: SAMSUNG SEMICONDUCTOR IN C _ MMBT5088 â'" IM E D | T lb M lM S Ã007271. T Â , dB M arking E L . 1 Q H C | SAMSUNG SEMICONDUCTOR B 546 SAMSUNG , CAPACITANCE COLLECTOR-BASE CAPAOCTANCE 1 5 fc (m A ), CO LLE C T O R CU RREN T SAMSUNG SEMICONDUCTOR , J E C T O fl CU RREN T N O ISE FIGURE SAMSUNG SEMICONDUCTOR 548 SAMSUNG SEMICONDUCTOR , SEMICONDUCTOR Unit: mm 683 SAMSUNG SEMICONDUCTOR INC 14E D J ?1b4142 PACKAGE DIMENSIONS -
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MJE350 equivalent

Abstract: ) IcB O Iebo fire SAMSUNG SEMICONDUCTOR Test Condition lc = -1m A . IB= 0 Veaâ'"â'"300V, lE , .i. Unit ' V mA mA 277 SAMSUNG SEMICONDUCTOR INC IME D I 7^4142 0007703 , ), COLLECTOR CURRENT SAMSUNG SEMICONDUCTOR 278 SAMSUNG SEMICONDUCTOR IME INC D 00G77Sb , 'â  A H 0.45 0.60 M Unit: mm SAMSUNG SEMICONDUCTOR 331 SAMSUNG SEMICONDUCTOR , » Unit: mm TO -220 $3.61 g K SAMSUNG SEMICONDUCTOR 332 | SAMSUNG SEMICONDUCTOR INC
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MJE350 equivalent MJE350 00077Q5 MJE340

samsung roadmap

Abstract: USB Flash Memory SAMSUNG by Samsung Semiconductor, Inc. © 2003 Samsung Semiconductor, Inc. SAMSUNG SEMICONDUCTOR, INC , shape the market. Samsung Semiconductor, the established leader in memory, is such a supplier , a supplier? © 2003 Samsung Semiconductor, Inc. CG2020-A 1.15.03 2 of 7 SAMSUNG , technology, processes, and designs. © 2003 Samsung Semiconductor, Inc. CG2020-A 1.15.03 3 of 7 SAMSUNG SEMICONDUCTOR, INC. POSITION PAPER NAND on the Rise Is My Supplier Ahead of the Curve
Samsung Electronics
Original
samsung roadmap USB Flash Memory SAMSUNG SAMSUNG MCp nand Samsung Nand gb MCP Technology Trend SAMSUNG NAND FLASH
Abstract: SAMSUNG SEMICONDUCTOR INC KSB596 IME D | 7^4142 0007502 4 PNP , 0 Y M l) 40-80 70-140 120-240 SAMSUNG SEMICONDUCTOR 77 | SAMSUNG , SEMICONDUCTOR ~ 3 3 * IS 79 I SAMSUNG SEMICONDUCTOR IM E INC D 7=11,4142 , 0.00H 0.45 0.60 M 0 .1 0 Unit: mm SAMSUNG SEMICONDUCTOR 331 SAMSU NG , '" s» Unit: mm TO-220 $3.61 g K SAMSUNG SEMICONDUCTOR 332 | SAMSUNG SEMICONDUCTOR -
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KSD526

samsung tv

Abstract: samsung 217 SAMSUNG SEMICONDUCTOR INC 14E D ( 7^4142 0QQ7t41 7 KSD5002 NPN TRIPLE , Veefsat) ff V, t, 3 2 0.4 V V MHz V M S c SAMSUNG SEMICONDUCTOR 216 SAMSUNG , COLLECTOR-EMITTER SATURATION VOLTAGE TURN ON TIME MA), COLLECTOR CURRENT O ff SAMSUNG SEMICONDUCTOR 217 , 100 200 500 1000 2000 5000 10000 Vcf
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samsung 217 NPN Transistor 1A 800V to - 92

transistor

Abstract: D 6 ^ B SAMSUNG SEMICONDUCTOR 512 SAMSUNG SEMICONDUCTOR INC IM E D X l ^ * 4 14 2 , ), COLLECTOfl CURRENT CURRENT GAIN BANDWIDTH PRODUCT k (m A ), COLLECTOR CURRENT SAMSUNG SEMICONDUCTOR 513 SAMSUNG SEMICONDUCTOR I NC 14E D 7 ^ 4 1 4 5 0007413 S T 7 |- PACKAGE DIMENSIONS TO-92 Unit: mm SAMSUNG SEMICONDUCTOR 683 SAMSUNG SEMICONDUCTOR INC 14E , t 2715 f m I SAMSUNG SEMICONDUCTOR 684 SAMSUNG SEMICONDUCTOR I NC 14E D
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MMBC1622D6

samsung SSE

Abstract: samsung tv SAMSUNG SEMICONDUCTOR INC 14E D |? 1 f c ,4 I 4 Z a a Q 7 t, S i 3 I KSD5006 COLOR TV , cc = 2 0 0 V RL=50n 0.4 \ SAMSUNG SEMICONDUCTOR 228 SAMSUNG SEMICONDUCTOR INC , SEMICONDUCTOR 229 SAMSUNG SEMICONDUCTOR INC 14E D I 7^4142 Q0a?b5S 7 KSD5006 , SAMSUNG SEMICONDUCTOR INC IM E D I 7=11,4142 00G?7Sb 2 P A C K A G E D IM E N , SAMSUNG SEMICONDUCTOR 331 SAMSU NG SEMICONDUCTOR INC 14E D 17^ 4142 0007757 4
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Abstract: SAMSUNG SEMICONDUCTOR I NC 14E 0 | 7*11,4142 0007^^6 « | 1 T - t f - * ? , ^300jiS, Duty Cycle£2% Marking - n _ 2 U ^ 4 1 SAMSUNG SEMICONDUCTOR HB 568 S , (mA), CO LLECTO R CURRENT SAMSUNG SEMICONDUCTOR T-29-29 CU RRENT GAiN-BANDW IOJH PRODUCT 1 , k OO, B A S S C M T T E R V O L T A G E 569 SAMSUNG SEMICONDUCTOR INC 14E D â  7 ^ 4 1 4 5 0007413 S T 7 |- PACKAGE DIMENSIONS TO-92 SAMSUNG SEMICONDUCTOR Unit: mm -
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MMBTA63
Abstract: SAMSUNG SEMICONDUCTOR INC 1I,E 0 | 7^4142 0007233 3 | MMBA812M4 PNP EPITAXIAL , Marking B _ M 4 W B SAMSUNG SEMICONDUCTOR 503 SAMSUNG SEMICONDUCTOR INC , SEMICONDUCTOR 683 SAMSUNG SEMICONDUCTOR INC 14E D J ?1b4142 0007414 ? , : mm 3.75 ; 4 -25 l 0.17 0.25 t y i 1.65 2715 f m I SAMSUNG SEMICONDUCTOR 684 SAMSUNG SEMICONDUCTOR INC 14E D I 7^^4145 GGD7415 * 1 T ^ q i - ^ o PACKAGE -
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MMBT5086

D F 331 TRANSISTOR

Abstract: lt 332 diode SAMSUNG SEMICONDUCTOR INC 14E 0 17^4142 OOQ?bkS T KSD5012 NPN TRIPLE DIFFUSED , ,V MHz V Vße(sat) fr V, t, - 3 2 0.4 f-S RU =50n c SAMSUNG SEMICONDUCTOR 240 SAMSUNG SEMICONDUCTOR INC 14e 0 1 7 ^4 1 4 5 a 0 0 7 bfe,b 1 I KSD5012 , VctOO, C O U E C T O R -C M IT T E R V O LT AG E 0 6 SAMSUNG SEMICONDUCTOR 241 SAMSUNG , fl-E M IT T ER V O LT A G E TcTC), CASE TEMPERATURE SAMSUNG SEMICONDUCTOR 242 SAMSUNG
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D F 331 TRANSISTOR transistor t 04 27 C 3311 transistor

equivalent transistor c 243

Abstract: samsung tv ) E : SAMSUNG SEMICONDUCTOR 243 SAMSUNG SEMICONDUCTOR INC IME D § 7 c lb41»lS , N T COLLECTOR-EMITTER VOLTAQE SAMSUNG SEMICONDUCTOR 244 IME O I 7 ñ t m 42 0 DQ7 b 7 D 3 | KSD5013 SAMSUNG SEMICONDUCTOR INC NPN TRIPLE DIFFUSED PLANAR SILICON , SAMSUNG SEMICONDUCTOR 245 SAMSUNG SEMICONDUCTOR INC IME O I V^bMlMS 0 0 G 7 7 , TO-92S Unit: mm 0 « SAMSUNG SEMICONDUCTOR 331 SAMSUNG SEMICONDUCTOR INC IME
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equivalent transistor c 243 0QG77
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