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S8785 Datasheet

Part Manufacturer Description PDF Type
S8785 Hamamatsu Si photodiode with preamp - Large area photodiode integrated with op amp and TE-cooler Original
S8785 Hamamatsu Photonics Si photodiode with preamp Original
S8785-01 Hamamatsu Si photodiode with preamp - Large area photodiode integrated with op amp and TE-cooler Original
S8785-01 Hamamatsu Photonics Si photodiode with preamp Original
S8785-02 Hamamatsu Si photodiode with preamp - Large area photodiode integrated with op amp and TE-cooler Original
S8785-02 Hamamatsu Photonics Si photodiode with preamp Original

S8785

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: 200 S8785 (T= -25 °C) S8785-01 (T= -5 °C) 0 -10 S8785-02 (T= -25 °C) -20 S8785-01 (T , l NOx detection S8785/-01: 10 × 10 mm l Low-light-level measurement S8785-02 : 15.6 mm (lens) l UV , cooling efficiency S8785/-02: T=50 °C S8785-01 : T=30 °C l High stability with thermistor S8785 series , voltage (S8785-02, photodiode) Operating temperature Storage temperature Operating temperature (photodiode , *2: S8785-01: 3.7 V Symbol Value Vcc ±20 V VR 30 V Topr -30 to +60 °C Tstg -40 to +80 °C Tdopr -30 Hamamatsu Photonics
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S8785/-01 S8785/-02 D-82211 SE-171 KSPD1055E02
Abstract: S8785 : T=50 °C S8785-01: T=30 °C l High stability with thermistor l Large active area size: 10 × 10 , dissipation *1: Max ripple: 10 % *2: S8785-01: 3.7 V Symbol Value Vcc ±20 V Topr -30 to +60 °C Tstg -40 to +80 , 190 to 1100 960 10 -0.9 -5.1 20 4 ±2 190 -13 0.3 30 -0.9 -5.1 25 5 ±2 180 S8785-01 T= -5 °C Unit nm nm , ) PHOTO SENSITIVITY (V/nW) -5 RELATIVE OUTPUT (dB) 0 -4 -3 S8785 (T= -25 °C) S8785-01 (T= -5 °C) -10 -2 -20 S8785-01 (T= -5 °C) -1 0 200 400 600 800 1000 -30 Hamamatsu Photonics
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KSPD1055E04
Abstract: S8785 : T=50 °C S8785-01: T=30 °C l High stability with thermistor l Large active area size: 10 × 10 , dissipation *1: Max ripple: 10 % *2: S8785-01: 3.7 V Symbol Value Vcc ±20 V Topr -30 to +60 °C Tstg -40 to +80 , 190 to 1100 960 10 -0.9 -5.1 20 4 ±2 190 -13 0.3 30 -0.9 -5.1 25 5 ±2 180 S8785-01 T= -5 °C Unit nm nm , ) PHOTO SENSITIVITY (V/nW) -5 RELATIVE OUTPUT (dB) 0 -4 -3 S8785 (T= -25 °C) S8785-01 (T= -5 °C) -10 -2 -20 S8785-01 (T= -5 °C) -1 0 200 400 600 800 1000 -30 Hamamatsu Photonics
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Si photodiode, united detector
Abstract: ) S8785 series -6 -5 -4 -3 S8785 (T= -25 °C) S8785-01 (T= -5 °C) -2 0 S8785-02 (T= -25 , =0 V, S8785-02: VR=15 V) S8785-01 (T= -5 °C) 10-4 S8785 (T= -25 °C) -5 10 S8785-02 (T , : TWO-STAGE S8785-01: ONE-STAGE OUT PHOTODIODE + GND CASE Vcc- NC KSPDC0044EA S8785-02 , KSPDB0152EA INDEX MARK KSPDA0071EB 3 Si photodiode with preamp S8785-02 S8785-01 42.0 ± , S8785-02 : 15.6 mm (lens) l UV to NIR Si photodiode optimized for precision photometry l Compact Hamamatsu Photonics
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gw 340 KSPD1055E03
Abstract: 0 S8785-02 (T= -25 °C) -10 -20 S8785-01 (T= -5 °C) -30 10 100 -1 0 200 , ) S8785-01 (T= -5 °C) 10-13 S8785 (T= -25 °C) 10-14 S8785-02 (T= -25 °C) 10 -15 (Typ. Vcc=±15 V, S8785/-01: VR=0 V, S8785-02: VR=15 V) S8785-01 (T= -5 °C) 10-4 S8785 (T= -25 °C) -5 , S8785-02 S8785-01 42.0 ± 0.4 42.0 ± 0.4 34.0 ± 0.2 34.0 ± 0.2 24.3 ± 0.2 ACTIVE AREA , S8785-02 : 15.6 mm (lens) l UV to NIR Si photodiode optimized for precision photometry l Compact Hamamatsu Photonics
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pth thermistor UV light lens detector KSPD1055E01
Abstract: /TUBE ASSENBLY) M M . . PRODUCT SPECIFICATION P S-87851-027 APPLIES. _ aa\ CKT A 8 6 HAS -
OCR Scan
PR03ECTION SD-87831-012