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Part : DPX3ME-A318-34S-3399 Supplier : ITT Industries Manufacturer : Avnet Stock : - Best Price : - Price Each : -
Part : S33996 Supplier : Square D Manufacturer : Newark element14 Stock : 16 Best Price : $42.33 Price Each : $53.22
Part : S33997 Supplier : Square D Manufacturer : Newark element14 Stock : - Best Price : $87.37 Price Each : $108.26
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S3399 Datasheet

Part Manufacturer Description PDF Type
S3399 Hamamatsu Si PIN photodiode - Large area, high-speed Si PIN photodiodes Original
S3399 Hamamatsu Photonics Si PIN photodiode Original

S3399

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: PHOTODIODE Si PIN S3071, S3072, S3399, S3883 Si PIN S3071, S3072, S3399, S38831 , S3399: 3.0 mm S3883: 1.5 mm l S3071: 40 MHz (VR=24 V) S3072: 45 MHz (VR=24 V) S3399: 100 MHz (VR=10 V) S3883: 300 MHz (VR=20 V) l : TO-5/8 s S3071 S3072 S3399 S3883 / *1 /K /K /K , ( Typ. Ta=25 °C) p (nm) (nm) S3071 3201060 920 S3072 S3399 3201000 840 , , S3399, S3883 s (Typ. Ta=25 °C) 0.7 (Typ.) +1.5 0.6 +1.0 (%/) (A/W) 0.5 -
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KPINB0149JA KPINB0510JA KPINA0027JC KPINA0024JB KPINA0026JA KPINA0025JB
Abstract: PHOTODIODE Si PIN photodiode S3071, S3072, S3399, S3883 Large area, high-speed Si PIN photodiodes S3071, S3072, S3399 and S3883 are Si PIN photodiodes having a relatively large active area from , S3072: 3.0 mm S3399: 3.0 mm S3883: 1.5 mm l Cut-off frequency S3071: 40 MHz (VR=24 V) S3072: 45 MHz (VR=24 V) S3399: 100 MHz (VR=10 V) S3883: 300 MHz (VR=20 V) l High reliability: TO-5/8 metal package , Storage dissipation temperature temperature P Topr Tstg (mW) (°C) (°C) S3071 S3072 S3399 S3883 s Hamamatsu Photonics
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KPINA0025EB D-82211 SE-171 KPIN1044E02
Abstract: Si PIN photodiodes S3071 S3072 S3399 S3883 Large area, high-speed Si PIN photodiodes The S3071, S3072, S3399 and S3883 are Si PIN photodiodes having a relatively large photosensitive area , Applications Photosensitive area size S3071: ϕ5.0 mm S3072: ϕ3.0 mm S3399: ϕ3.0 mm S3883: ϕ1.5 mm , =24 V) S3399: 100 MHz (VR=10 V) S3883: 300 MHz (VR=20 V) High reliability: TO-5/8 metal package Structure / Absolute maximum ratings Type no. S3071 S3072 S3399 S3883 Dimensional outline Hamamatsu
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B1201 KPIN1044E06
Abstract: Si PINフã'©ãƒãƒ'ã'¤ã'ªãƒ¼ãƒ‰ S3071 S3072 S3399 S3883 大面ç©é«˜é'Si PINフã , S3072: ϕ3.0 mm S3399: ϕ3.0 mm S3883: ϕ1.5 mm 遮æ­å'¨æ³¢æ•° S3071: 40 MHz (VR=24 V) S3072: 45 MHz (VR=24 V) S3399: 100 MHz (VR=10 V) S3883: 300 MHz (VR=20 V) 空é"å‰ä¼é , S3072 S3399 S3883 å¤å½¢ 寸法図/ çª"材*1 (1)/K (2)/K (3)/K (4)/K çu¶å¯¾æ'大定格 , •· ç¯"囲 λ (nm) λp S3071 S3072 S3399 S3883 ç­çu¡é›»æu Isc 100 lx 暗電æu Hamamatsu
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KPINA0024JD KPINA0027JE KPINA0026JC KPINA0025JE KPIN1044J06
Abstract: PHOTODIODE Si PIN photodiode S3071, S3072, S3399, S3883 Large area, high-speed Si PIN photodiodes S3071, S3072, S3399 and S3883 are Si PIN photodiodes having a relatively large active area from , : 5.0 mm S3072: 3.0 mm S3399: 3.0 mm S3883: 1.5 mm l Cut-off frequency S3071: 40 MHz (VR=24 V) S3072: 45 MHz (VR=24 V) S3399: 100 MHz (VR=10 V) S3883: 300 MHz (VR=20 V) l High reliability: TO-5/8 metal package s General ratings / Absolute maximum ratings Type No. S3071 S3072 S3399 S3883 Hamamatsu Photonics
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KPINA0024EA INA0025EB KPIN1044E01
Abstract: PHOTODIODE Si PIN photodiode S3071, S3072, S3399, S3883 Large area, high-speed Si PIN photodiodes S3071, S3072, S3399 and S3883 are Si PIN photodiodes having a relatively large active area from , : 5.0 mm S3072: 3.0 mm S3399: 3.0 mm S3883: 1.5 mm l Cut-off frequency S3071: 40 MHz (VR=24 V) S3072: 45 MHz (VR=24 V) S3399: 100 MHz (VR=10 V) S3883: 300 MHz (VR=20 V) l High reliability: TO-5/8 metal package I General ratings / Absolute maximum ratings Type No. S3071 S3072 S3399 S3883 Hamamatsu Photonics
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V424
Abstract: Si PIN photodiodes S3071 S3072 S3399 S3883 Large area, high-speed Si PIN photodiodes The S3071, S3072, S3399 and S3883 are Si PIN photodiodes having a relatively large photosensitive area from 1.5 to , size S3071: 5.0 mm S3072: 3.0 mm S3399: 3.0 mm S3883: 1.5 mm Cutoff frequency S3071: 40 MHz (VR=24 V) S3072: 45 MHz (VR=24 V) S3399: 100 MHz (VR=10 V) S3883: 300 MHz (VR=20 V) High reliability: TO-5/8 metal , ) Storage temperature Tstg (°C) Type no. Package S3071 S3072 S3399 S3883 TO-8 TO-5 Note Hamamatsu
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KPIN1044E05
Abstract: PHOTODIODE Si PIN photodiode S3071, S3072, S3399, S3883 Large area, high-speed Si PIN photodiodes S3071, S3072, S3399 and S3883 are Si PIN photodiodes having a relatively large active area from , : 5.0 mm S3072: 3.0 mm S3399: 3.0 mm S3883: 1.5 mm l Cut-off frequency S3071: 40 MHz (VR=24 V) S3072: 45 MHz (VR=24 V) S3399: 100 MHz (VR=10 V) S3883: 300 MHz (VR=20 V) l High reliability: TO-5/8 metal package s General ratings / Absolute maximum ratings Type No. S3071 S3072 S3399 S3883 Hamamatsu Photonics
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Abstract: PHOTODIODE Si PIN photodiode S3071, S3072, S3399, S3883 Large area, high-speed Si PIN photodiodes S3071, S3072, S3399 and S3883 are Si PIN photodiodes having a relatively large active area from , : 5.0 mm S3072: 3.0 mm S3399: 3.0 mm S3883: 1.5 mm l Cut-off frequency S3071: 40 MHz (VR=24 V) S3072: 45 MHz (VR=24 V) S3399: 100 MHz (VR=10 V) S3883: 300 MHz (VR=20 V) l High reliability: TO-5/8 metal package s General ratings / Absolute maximum ratings Type No. S3071 S3072 S3399 S3883 Hamamatsu Photonics
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VR24 KPIN1044E04
Abstract: PHOTODIODE Si PIN photodiode S3071, S3072, S3399, S3883 Large area, high-speed Si PIN photodiodes S3071, S3072, S3399 and S3883 are Si PIN photodiodes having a relatively large active area from , S3072: 3.0 mm S3399: 3.0 mm S3883: 1.5 mm l Cut-off frequency S3071: 40 MHz (VR=24 V) S3072: 45 MHz (VR=24 V) S3399: 100 MHz (VR=10 V) S3883: 300 MHz (VR=20 V) l High reliability: TO-5/8 metal package , Storage dissipation temperature temperature P Topr Tstg (mW) (°C) (°C) S3071 S3072 S3399 S3883 s Hamamatsu Photonics
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KPIN1044E03
Abstract: Si PIN Photodiodes (4) Type No. Dimensional Effective Active Outline Active (P.46 to 48)/ Package Area Size Area Window Material `1 (m m 2) (mm) 2.4 3.6 X X Spectral Response Range X (nm) Peak Sensitivity Wavelength Xp (nm) Photo Sensitivity S (A/W) Xp 660 nm 780 nm 830 nm Short Circuit Current Isc 100 lx (MA) S1223 S1223-01 S3071 S3072 S3883 S3399 ®/K ®/K ®/K ®/K ®/K TO , 30 -4 0 t o +100 -5 5 t o +125 S3072 S3883 S3399 Type No. (pF) 10 * 2 20 * 2 18 * 3 7*3 (W/Hz1 -
OCR Scan
O30100 KPINB0067EB KPINB0070EC KPINB0071EB
Abstract: Active Area 2 .4 X 2 .8 S3072 S3399 Size (mm) S1223 S1223-01 Effective 1.7 ^ , -5 5 to +125 50 S3072 50 S3883 30 S3399 ) V r= 2 0 V ) V r= 2 4 V ) V r= 1 0 V -
OCR Scan
KPINB0071SA
Abstract: 0.58 0.6 1.4 S3399 ®/K 03.0 7.0 5.6 "1: Window material, K: borosilicate glass © 30 , "2 6 "2 6.7 x 10'5"2 30 S3883 50 S3399 0.1 '4 1.0 100 '4 20 9.4 x IO"'5"4 â'¢2: VR=20 V â'¢3: VR , ) S3071, S307; S3399, S3883 200 400 600 800 1000 WAVELENGTH (nm) REVERSE VOLTAGE (V) -
OCR Scan
S5821 S5821-02 S5821-03 S5971 S5972 S5106 S2973-01 S3590-01 S5573 S6775 S6968 S5077 S5821-01
Abstract: S1863-01 ® /K ¿14mmTO-8 S3883 ®/K S3399 S5106 0.6 320 to 1060 7.0 960 , S3399 S5106 30 S5107 - 2 0 to 100 - 2 0 to S3590-01 +60 +80 S3590-03 S3590 -
OCR Scan
10X10 S3588-03 S3590-05 S1087-01 S1087-11 G1118
Abstract: ±30 mA Is s Si PIN TO-8 : S3071 TO-5 : S3399, S3883 * TO-18 : S5821 , S5971, S5972 -
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C8366 S5973 DC100 KACCB0055JA KACCB0056JA KACCA0104JB
Abstract: 540nm Ap S1223 S1223-01 S3071 S3072 S1863-01 S3883 S3399 S5106 S5107 S3590-01 S3590-03 S3590 , S1863-01 S3883 S3399 S5106 1.12 1.0*6 5.0*6 10*6 5 *7 1 0 *8 j 100 (V r=10V) 20 (V r=10V) 10 -
OCR Scan
KPIND0066EA KPINB0070F KPINB0071CA KPINB006SEB KPINB0069EA KPINBQ072EA
Abstract: Si PIN Photodiodes (4) Type No. Dimensional Outline (P.40-43)/ Window Material*' O /K © K ® /K © /K ® /K ® /K ® /R ® /R ® /R ® /R S1223 S1223 01 S3071 S3072 S1863-01 S3883 S3399 S5106 S5107 S3590 01 S3590 03 S3590 05 S3588 03 *1 W i n d o w m aterial, Short Photo Sensitivity S (A/W) Typ. Peak Spectral Circuit Active Area Effective Response Sensitivity Current Isc Package Size Active Area Range , 53071 53072 S1863 01 S3883 S3399 55106 0.2*4 Q.5*b o CO 100 -40 to +100 -55 to + 125 1.15 -
OCR Scan
VH-24VJ
Abstract: ±30 mA I Connectable Hamamatsu Si PIN photodiodes TO-8 type: S3071 TO-5 type: S3399, S3883 Hamamatsu Photonics
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TO8 socket TO-8 SOCKET Photodiode, TO-5, KACC1067E02
Abstract: ±30 mA s Connectable Hamamatsu Si PIN photodiodes TO-8 type: S3071 TO-5 type: S3399, S3883 Hamamatsu Photonics
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4-Pin HIROSE photodiode amplifier Photodiode HR10-7P-4S hirose HR10 hamamatsu c8366 KACC1067E03
Abstract: -8 type: S3071 TO-5 type: S3399, S3883 * TO-18 type: S5821 series, S5971, S5972 *, S5973 series Hamamatsu Photonics
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Abstract: S5973/S9055 series 15 Yes S5971, S3399 S3883, S5972 16 Yes S10783, S10784 16 , Photo TO-18 100 (VR=10 V) 20 (VR=10 V) ϕ3 S3399 0.45 300 (VR=20 V) S3883 0.58 , 0.55 3 (VR=10 V) TO-18 Spectral response S5971, S3399, S3883 0.7 Photosensitivity (A/W , Photosensitivity (A/W) S10783, S10784 (Typ. Ta=25 ˚C) 0.2 0.5 QE=100% 0.4 0.3 0.2 S3399 , KPINB0315ED Terminal capacitance vs. reverse voltage S5971, S3399, S3883 S10783, S10784 (Typ. Ta Hamamatsu
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near IR photodiodes S8558 S8745-01 KSPD0001E09
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