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S21E

Catalog Datasheet MFG & Type PDF Document Tags

VS2530

Abstract: NESG3032M14 ­ 100 nA VCE = 2 V, IC = 6 mA 220 300 380 ­ S21e VCE = 2 V, IC = 15 mA, f , IC (mA) vs. MAGMSG vs. 40 |S21e|2 (dB) MAG (dB) MSG (dB) VCE = 3 V f = 2 GHz , MAG 15 10 5 0 0.1 100 MSG MAG 25 MAG 20 15 MSG |S21e|2 10 5 0 0.1 1 100 MAGMSG vs. |S21e|2 (dB) MAG (dB) MSG (dB) 30 10 40 VCE = 2 V IC = 15 mA 35 1 f (GHz) MAGMSG vs. 40 MSG |S21e|2 IC (mA) |S21e|2 (dB) MAG
NEC
Original
NESG3032M14 VS2530 NESG3032M14-A NESG3032M14-T3 NESG3032M14-T3-A PU10575JJ02V0DS M8E02

NESG204619

Abstract: NESG204619-A VCE = 1 V, IC = 15 mA, f = 2 GHz 15 18 ­ GHz S21e VCE = 1 V, IC = 15 mA, f = 2 GHz , IC = 15 mA 30 |S21e|2 (dB) MAG (dB) MSG (dB) |S21e|2 (dB) MAG (dB) MSG (dB) 35 MSG 25 MAG 20 MSG |S21e|2 15 10 5 0 0.1 1 10 100 30 MSG 4 MAG 25 MSG 20 15 |S21e|2 10 5 0 0.1 f (GHz) VCE = 2 V IC = 15 mA 1 10 , V f = 1 GHz MSG MSG MAG |S21e|2 (dB) MAG (dB) MSG (dB) |S21e|2 (dB) MAG (dB
NEC
Original
NESG204619 NESG204619-A NESG204619-T1-A NESG204619-T1 PU10465JJ02V0DS

NE661M05

Abstract: 50 70 100 ­ VCE = 3 V, IC = 10 mA, f = 2 GHz 20.0 25.0 ­ GHz S21e VCE = , 100 IC (mA) vs. 30 MAGMSG vs. 40 |S21e|2 (dB) MAG (dB) MSG (dB) VCE = 3 V f , 30 MSG MAG 25 20 |S21e|2 15 10 5 0 0.1 100 1 10 IC (mA) f (GHz) MAGMSG vs. MAGMSG vs. 35 30 MSG MAG 25 20 40 VCE = 2 V IC = 5 mA |S21e|2 (dB) MAG (dB) MSG (dB) |S21e|2 (dB) MAG (dB) MSG (dB) 40 |S21e|2 15 10 5 0 0.1 1
NEC
Original
NE661M05 NE661M05-T1 PU10323JJ02V0DS L044-435-1588 X044-435-1579 X044-435-1918

2SC5800

Abstract: GHz TYP., S21e2 = 4.0 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz 2 2 × 2SC5800 6 M16, 1208 Q1 , hFE 1 1 fT 2 fT 1 S21e VCE = 1 V, IC = 5 mA, f = 2 GHz 3.0 4.0 ­ dB 2 S21e VCE = 1 V, IC = 15 mA, f = 2 GHz 4.5 5.5 ­ dB NF VCE = 1 V, IC = , 30 |S21e|2 (dB) MAG (dB) MSG (dB) |S21e|2 (dB) MAG (dB) MSG (dB) 35 25 MSG 20 MAG 15 10 5 |S21e|2 0 0.1 1 VCE = 2 V IC = 5 mA 30 25 MSG 20 MAG
NEC
Original
PA895TD PA895TD-T3 PU10152JJ02V0DS

NESG210719

Abstract: NESG210719-T1 hFE 1 VCE = 1 V, IC = 5 mA RF 1 fT 2 fT 1 S21e VCE = 1 V, IC = 5 mA, f = 2 GHz 6.5 8 ­ dB 2 S21e VCE = 1 V, IC = 20 mA, f = 2 GHz ­ 9 ­ dB , IC = 5 mA 30 |S21e|2 (dB) MAG (dB) MSG (dB) |S21e|2 (dB) MAG (dB) MSG (dB) 35 25 20 MSG MAG 15 MAG MSG 10 |S21e|2 5 0 0.1 1 10 VCE = 1 V IC = 20 mA 30 25 MSG 20 MAG 15 |S21e|2 10 MSG 5 0 0.1 100 VCE = 2 V IC = 5 mA
NEC
Original
NESG210719 NESG210719-T1 NESG210719-A NESG210719-T1-A PU10419JJ03V0DS

S21E

Abstract: NESG4030M14 nA VCE = 2 V, IC = 6 mA 270 400 540 ­ S21e VCE = 2 V, IC = 20 mA, f = 5.8 GHz , |S21e|2 10 5 0 30 |S21e|2 (dB) MAG (dB) MSG (dB) |S21e|2 (dB) MAG (dB) MSG (dB) 30 VCE = 2 V, IC = 20 mA 25 MSG MAG 20 15 MAG MSG |S21e|2 10 5 0 1 10 , 20 mA 25 |S21e|2 (dB) MAG (dB) MSG (dB) |S21e|2 (dB) MAG (dB) MSG (dB) 30 MSG MAG 20 MAG 15 MSG |S21e|2 10 5 0 1 10 25 MSG 20 15 MAG
NEC
Original
NESG4030M14 NESG4030M14-A NESG4030M14-T3 NESG4030M14-T3-A S21E PU10728JJ02V0DS

NESG3033M14

Abstract: MCR01MZPJ5R6 Point S21e NF Ga Cre Note 2 Note 3 2 Symbol Test Conditions MIN. TYP. MAX. Unit , BANDWIDTH PRODUCT vs. COLLECTOR CURRENT 30 Gain Bandwidth Product fT (GHz) Insertion Power Gain |S21e|2 , , MAG, MSG vs. FREQUENCY 40 35 30 25 20 15 10 5 0 0.1 1 10 100 |S21e|2 MSG MAG VCE = 1 V IC = 15 mA , Frequency f (GHz) INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY Insertion Power Gain |S21e|2 (dB) Maximum , . FREQUENCY Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain
Renesas Technology
Original
NESG3033M14 MCR01MZPJ5R6 R09DS0049EJ0300 NESG3033M14-A NESG3033M14-T3 NESG3033M14-T3-A
Abstract: 35 VCE = 1 V IC = 10 mA 30 25 MSG MAG 20 15 10 |S21e|2 5 0 0.1 1 10 Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) Q2 INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY Insertion Power Gain |S21e|2 (dB) Maximum , 25 20 MSG MAG 15 10 5 |S21e|2 0 0.1 1 10 INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY 35 VCE = 2 V IC = 10 mA 30 25 MSG MAG 20 15 10 |S21e|2 5 0 0.1 1 -
Original
PA862TD 2SC5435 PA862TD-T3 P15685EJ1V0DS00 P15685EJ1V0DS

NESG2031M05-T1

Abstract: NESG2031M05 VCE = 3 V, IC = 20 mA, f = 2 GHz 20 25 ­ GHz S21e VCE = 3 V, IC = 20 mA, f = 2 GHz , ) vs. 35 MAGMSG vs. 40 |S21e|2 (dB) MAG (dB) MSG (dB) VCE = 3 V f = 2 GHz 30 , MAG 25 20 |S21e|2 15 10 5 0 0.1 100 1 10 100 IC (mA) f (GHz) MAGMSG vs. MAGMSG vs. 40 VCE = 2 V IC = 20 mA 35 |S21e|2 (dB) MAG (dB) MSG (dB) |S21e|2 (dB) MAG (dB) MSG (dB) 40 MSG 30 MAG 25 20 |S21e|2 15 10 5 0 0.1 1
NEC
Original
NESG2031M05 NESG2031M05-T1 PU10189JJ03V0DS L044-435-1573 L044-435-1577
Abstract: 3rd Order Intermodulation Distortion Output Intercept Point | S21e |2 NF NF Ga Ga Cre Note 2 MSGNote 3 , INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) Insertion Power Gain |S21e|2 (dB) Maximum Available Power , VCE = 1 V IC = 20 mA 30 25 20 15 10 5 0 1 10 Frequency f (GHz) 100 MSG MAG MAG MSG |S21e|2 INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY VCE = 2 V IC = 20 mA |S21e|2 INSERTION POWER GAIN, MAG California Eastern Laboratories
Original
NESG3031M14 NESG3031M14-A NESG3031M14-T3-A

transistor T1J

Abstract: NESG2101M05-T1 GHz 14 17 ­ GHz S21e VCE = 3 V, IC = 50 mA, f = 2 GHz 11.5 13.5 ­ dB , vs. MAGMSG vs. 40 VCE = 1 V IC = 50 mA 35 |S21e|2 (dB) MAG (dB) MSG (dB) |S21e|2 (dB) MAG (dB) MSG (dB) 40 MSG 30 MAG 25 20 15 |S21e|2 10 5 0 0.1 1 10 VCE = 2 V IC = 50 mA 35 MSG 30 MAG 25 20 15 |S21e|2 10 5 0 0.1 100 1 , |S21e|2 10 5 0 0.1 40 VCE = 3 V IC = 50 mA |S21e|2 (dB) MAG (dB) MSG (dB) |S21e|2
NEC
Original
NESG2101M05 NESG2101M05-T1 transistor T1J RF transistor PU10190JJ02V0DS

GRM155B11H102KA01

Abstract: AML1005H3N9STS VEB = 1 V, IC = 0 mA ­ ­ 100 nA VCE = 2 V, IC = 6 mA 220 300 380 ­ S21e , ) IC (mA) vs. MAGMSG vs. 30 40 |S21e|2 (dB) MAG (dB) MSG (dB) VCE = 3 V f = , 25 20 MAG 10 5 0 0.1 100 MSG |S21e|2 15 1 10 100 IC (mA) f (GHz) MAGMSG vs. MAGMSG vs. 35 30 MSG MAG 25 MAG 20 15 MSG |S21e|2 10 5 0 0.1 40 VCE = 2 V IC = 15 mA |S21e|2 (dB) MAG (dB) MSG (dB) |S21e|2 (dB
NEC
Original
GRM155B11H102KA01 AML1005H5N6STS AML1005H3N9STS FDK 1575 PU10640JJ02V0DS 10640JJ02V0DS GRM1552C1H270JZ01 GRM1552C1H6R0JZ01
Abstract: Gain 1 dB Compression Output Power fT S21e NF NF Ga Ga Cre Note 2 2 Symbol Test Conditions , , MSG vs. FREQUENCY Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) 35 30 25 20 15 10 5 0 0.1 1 10 100 |S21e|2 MSG VCE = 1 V, IC = 50 mA MAG 40 35 30 25 20 15 10 5 0 0.1 1 10 100 |S21e|2 MSG MAG INSERTION POWER GAIN, MAG, MSG vs NEC
Original
NESG2101M16 NESG2101M16-A NESG2101M16-T3 NESG2101M16-T3-A M8E0904E

transistor T1J

Abstract: NESG2101M05-T1 GHz S21e VCE = 3 V, IC = 50 mA, f = 2 GHz 11.5 13.5 - dB Noise Figure (1) NF , 35 30 INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY MSG MAG 25 20 15 |S21e|2 10 5 0 0.1 1 10 100 Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG , 2 V IC = 50 mA 35 30 MSG MAG 25 20 15 |S21e|2 10 5 0 0.1 1 10 100
NEC
Original
PU10190EJ02V0DS

NESG2031M05-T1

Abstract: NESG2031M05 , IC = 20 mA, f = 2 GHz 20 25 - GHz S21e VCE = 3 V, IC = 20 mA, f = 2 GHz 16.0 , 15 10 5 0 1 10 100 Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG , 35 30 MSG MAG 25 20 15 |S21e|2 10 5 0 0.1 1 10 100 INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY 40 VCE = 2 V IC = 20 mA 35 30 MSG MAG 25 20 |S21e|2 15 10 5 0 0.1 1 10 100 Insertion Power Gain |S21e|2 (dB) Maximum Available Power
NEC
Original
PU10189EJ03V0DS

NESG250134

Abstract: NESG250134-AZ % ­ 60 ­ % hFE 1 RF fT S21e 2 MSG 1 GL 2 f = , . 20 40 |S21e|2 (dB) MAG (dB) MSG (dB) fT (GHz) VCE = 4 V f = 460 MHz 16 12 8 4 0 10 100 1 000 30 MSG MAG 25 20 15 10 5 |S21e|2 0 0.1 1 IC (mA , vs. MAGMSG vs. 40 VCE = 3.6 V IC = 100 mA 35 |S21e|2 (dB) MAG (dB) MSG (dB) |S21e|2 (dB) MAG (dB) MSG (dB) 40 MSG 30 MAG 25 20 15 10 5 |S21e|2 0 0.1
NEC
Original
NESG250134 NESG250134-AZ NESG250134-T1-AZ NESG250134-T1 PU10422JJ03V0DS

NESG3031M05-T1-A

Abstract: NESG3031M05 hFE 1 RF S21e VCE = 3 V, IC = 20 mA, f = 5.8 GHz 6.0 8.5 ­ dB 1 NF , 10 2 |S21e| 5 0 |S21e|2 (dB) MAG (dB) MSG (dB) |S21e|2 (dB) MAG (dB) MSG (dB) 30 25 MAG 20 MAG 15 100 10 MSG 10 |S21e|2 5 0 1 VCE = 2 V IC = 20 mA , mA MSG 25 MAG 20 MAG 15 MSG 10 2 |S21e| 5 0 1 10 |S21e|2 (dB) MAG (dB) MSG (dB) |S21e|2 (dB) MAG (dB) MSG (dB) 30 MSG 20 MAG 15 |S21e|2
NEC
Original
NESG3031M05 NESG3031M05-A NESG3031M05-T1 NESG3031M05-T1-A PU10414JJ04V0DS

maximum gain s2p

Abstract: Transfer Capacitance fT fT S21e S21e NF Ga Cre Note 2 2 2 Symbol Test Conditions MIN. TYP , . NESG210719 INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) 35 30 25 20 15 10 5 0 0.1 |S21e|2 MSG , . FREQUENCY VCE = 1 V IC = 20 mA MSG MAG MAG MSG |S21e|2 1 10 100 1 10 100 Frequency
Renesas Technology
Original
maximum gain s2p R09DS0051EJ0400
Abstract: Compression Output Power 3rd Order Intermodulation Distortion Output Intercept Point S21e NF Ga Cre Note 2 2 , Bandwidth Product fT (GHz) Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum , 1 10 100 |S21e|2 MAG MSG MSG MAG VCE = 1 V IC = 15 mA VCE = 3 V f = 2 GHz 25 20 15 10 5 0 1 10 , Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain NEC
Original
Abstract: 100 Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power , 20 15 MAG MSG |S21e|2 10 5 0 0.1 1 10 100 INSERTION POWER GAIN, MAG, MSG , |S21e|2 10 5 0 0.1 1 10 100 Frequency f (GHz) Insertion Power Gain |S21e|2 (dB , ) INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY Insertion Power Gain |S21e|2 (dB) Maximum Available Power , 15 mA 35 30 MSG MAG 25 MAG 20 15 MSG |S21e|2 10 5 0 0.1 1 10 100 Renesas Electronics
Original

transistor T1J

Abstract: NESG2101M05-T1 GHz S21e VCE = 3 V, IC = 50 mA, f = 2 GHz 11.5 13.5 - dB Noise Figure (1) NF , 35 30 INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY MSG MAG 25 20 15 |S21e|2 10 5 0 0.1 1 10 100 Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG , 2 V IC = 50 mA 35 30 MSG MAG 25 20 15 |S21e|2 10 5 0 0.1 1 10 100
NEC
Original
NEC NESG2101M05 T1J marking MICROWAVE TRANSISTOR
Abstract: 50 mA MSG MAG 25 20 15 |S21e|2 10 5 0 0.1 1 10 100 Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB , 20 15 |S21e|2 10 5 0 0.1 1 10 100 INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY 40 VCE = 3 V, IC = 50 mA 35 30 MSG MAG 25 20 |S21e|2 15 10 5 0 0.1 1 Renesas Electronics
Original
Abstract: |S21E|2 NF ICBO IEBO hFE Q2 fT Cre |S21E|2 |S21|S21E|2E|2 Insertion Power GainIat VCE = 1 V, IC , , MAG, MSG vs. FREQUENCY Insertion Power Gain, |S21e|2 (dB) Maximum Available Gain, MAG(dB) Maximum Stable Gain, MSG(dB) Insertion Power Gain, |S21e|2 (dB) Maximum Available Gain, MAG(dB) Maximum Stable , 20 MAG 15 10 5 |S21e|2 0 0.1 1 10 |S21e|2 1 10 Frequency, f (GHz) INSERTION POWER GAIN , Insertion Power Gain, |S21e|2 (dB) Maximum Available Gain, MAG(dB) Maximum Stable Gain, MSG(dB) Insertion NEC
Original
UPA862TD NE851 NE685

transistor marking T1k ghz

Abstract: NESG3031M05-T1 300 380 - S21e VCE = 3 V, IC = 20 mA, f = 5.8 GHz 6.0 8.5 - dB Noise Figure , . FREQUENCY 30 VCE = 1 V IC = 20 mA 25 MSG MAG 20 15 10 |S21e| 2 5 0 1 100 10 Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB , MSG 10 |S21e|2 5 0 1 10 100 INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY 30
NEC
Original
transistor marking T1k ghz

NESG4030M14

Abstract: NESG4030M14-A = 0.4 V, IC = 0 mA - - 100 nA VCE = 2 V, IC = 6 mA 270 400 540 - S21e , . FREQUENCY VCE = 1 V, IC = 20 mA 25 MAG MSG 20 15 2 |S21e| 10 5 0 1 10 100 Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB , MAG MSG |S21e|2 10 5 0 1 10 100 INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR
NEC
Original
Abstract: Compression Output Power 3rd Order Intermodulation Distortion Output Intercept Point S21e NF NF Ga Ga Cre , POWER GAIN, MAG, MSG vs. FREQUENCY Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain , 15 10 |S21e|2 5 0 MAG MSG MSG MAG VCE = 2 V IC = 20 mA INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY |S21e|2 1 10 Frequency f (GHz) 100 1 10 Frequency f (GHz) 100 INSERTION NEC
Original
NESG3031M14-T3 PU10415EJ02V0DS
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