NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: MCH4013 MCH4013 No. N A 1 2 6 8 N MCH4013 MCH4013 NPN UHF X , fT=22.5GHz typ(VCE=3V) S21e2=16dB typ(f=2GHz) Absolute Maximum Ratings / Ta=25 VCBO VCEO VEBO IC PC , Cre S21e2 VCB=1V, f=1MHz VCE=3V, IC=10mA, f=2GHz 12 0.06 16 pF dB NF VCE=1V , , VCB - V 7 10 IT13897 IT13897 No. A1268-2/3 A1268-2/3 MCH4013 MCH4013 S21e2 - IC 20 fT - IC 7 f=2GHz , , PC - mW , S21e2 - dB f=2GHz 0 2 3 5 7 10 , IC - mA 2 3 IT13898 IT13898 ... | Original |
3 pages, |
S21E2 MCH4013 A1268 MCH4013 abstract |
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| Abstract: isc RF Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC2408 2SC2408 DESCRIPTION ·Low Noise NF = 2.4 dB TYP. ;@ f = 200 MHz ·High Gain S21e2 = 21 dB TYP. ;@ f = 200 MHz APPLICATIONS ·Designed for use in high frequency wide band amplifier. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 35 V VCEO , S21e2 Insertion Power Gain IC= 50mA ; VCE= 10V; f= 200MHz; RG = 50 Noise Figure IC= 30mA ... | Original |
2 pages, |
RF POWER TRANSISTOR NPN NPN RF Transistor 2SC2408 2SC2408 abstract |
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| Abstract: EC4H09C EC4H09C No. N A 1 2 6 7 N EC4H09C EC4H09C NPN UHF X , fT=26GHz typ(VCE=3V) S21e2=16.5dB typ(f=2GHz) (UL94 HB) Absolute Maximum Ratings / Ta=25 unit VCBO VCEO 10 3.5 V V VEBO IC 2.5 40 V mA PC Tj 120 150 mW Tstg - 55 150 Electrical Characteristics / Ta=25 ICBO IEBO hFE fT Cre S21e2 1 S21e2 2 VCE=3V, IC=20mA VCB=1V, f=1MHz VCE=1V, IC=10mA, f=2GHz VCE=3V ... | Original |
3 pages, |
S21E2 ECSP1008-4 EC4H09C A1267 EC4H09C abstract |
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| Abstract: S21e2 (1) VCE = 1 V, IC = 5 mA, f = 2 GHz 7 S21e2 (2) VCE = 3 V, IC = 15 mA, f = 2 , fT (2) VCE = 3 V, IC = 10 mA 7 10 S21e2 (1) VCE = 1 V, IC = 5 mA, f = 2 GHz 5 S21e2 (2) VCE = 3 V, IC = 20 mA, f = 2 GHz 3 6.5 NF (1) VCE = 1 V, IC = ... | Original |
2 pages, |
MT6L62AT MT3S07S MT3S03AS VHF-UHF Band oscillator MT6L62AT abstract |
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| Abstract: Reverse transfer capacitance VCE = 3 V, IC = 5 mA 7 10 S21e2 (1) VCE = 1 V, IC = 5 mA, f = 2 GHz 7.5 S21e2 (2) VCE = 3 V, IC = 7 mA, f = 2 GHz 4.5 8 NF (1 , fT (2) VCE = 3 V, IC = 10 mA 7 10 S21e2 (1) VCE = 1 V, IC = 5 mA, f = 2 GHz 5 S21e2 (2) VCE = 3 V, IC = 20 mA, f = 20 GHz 3 6.5 NF (1) VCE = 1 V, IC = ... | Original |
2 pages, |
MT6L58AS MT3S06T MT3S06S MT3S03AT MT3S03AS MT6L58AS abstract |
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| Abstract: S21e2 (1) VCE = 1 V, IC = 5 mA, f = 2 GHz 7 S21e2 (2) VCE = 3 V, IC = 15 mA, f = 2 , fT (2) VCE = 3 V, IC = 7 mA 5 7 Transition frequency S21e2 (1) 8.5 7.5 , VCE = 3 V, IC = 20 mA, f = 1 GHz NF (1) Noise figure VCE = 1 V, IC = 5 mA, f = 1 GHz S21e2 ... | Original |
2 pages, |
MT6L61AS MT3S07S MT3S04AS MT6L61AS abstract |
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| Abstract: Reverse transfer capacitance VCE = 3 V, IC = 5 mA 7 10 S21e2 (1) VCE = 1 V, IC = 5 mA, f = 2 GHz 7.5 S21e2 (2) VCE = 3 V, IC = 7 mA, f = 2 GHz 4.5 8 NF (1 , transfer capacitance S21e2 (1) VCE = 1 V, IC = 5 mA, f = 1 GHz 8.5 S21e2 (2) VCE = 3 ... | Original |
2 pages, |
MT6L57AS MT3S06T MT3S06S MT3S04AT MT3S04AS high dc current gain transistor MT6L57AS abstract |
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| Abstract: S21e2 (1) VCE = 1 V, IC = 5 mA, f = 2 GHz 6.5 S21e2 (2) VCE = 3 V, IC = 15 mA, f = 2 , ) VCE = 3 V, IC = 7 mA 5 7 Transition frequency S21e2 (1) 8.5 7.5 11 , 3 V, IC = 20 mA, f = 1 GHz NF (1) Noise figure VCE = 1 V, IC = 5 mA, f = 1 GHz S21e2 (2 ... | Original |
2 pages, |
MT6L61AT MT3S07S MT3S04AS MT6L61AT abstract |
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| Abstract: S21e2 (1) VCE = 1 V, IC = 5 mA, f = 2 GHz 7 S21e2 (2) VCE = 3 V, IC = 15 mA, f = 2 , fT (2) VCE = 3 V, IC = 10 mA 7 10 S21e2 (1) VCE = 1 V, IC = 5 mA, f = 2 GHz 5 S21e2 (2) VCE = 3 V, IC = 20 mA, f = 2 GHz 3 6.5 NF (1) VCE = 1 V, IC = ... | Original |
2 pages, |
MT6L62AE MT3S07S MT3S03AS MT6L62AE abstract |
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| Abstract: S21e2 (1) VCE = 1 V, IC = 5 mA, f = 2 GHz 7 S21e2 (2) VCE = 3 V, IC = 15 mA, f = 2 , fT (2) VCE = 3 V, IC = 7 mA 5 7 Transition frequency S21e2 (1) 8.5 7.5 , VCE = 3 V, IC = 20 mA, f = 1 GHz NF (1) Noise figure VCE = 1 V, IC = 5 mA, f = 1 GHz S21e2 ... | Original |
2 pages, |
MT6L61AE MT3S07S MT3S04AS MT6L61AE abstract |
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| Abstract: 2010 4 1 NEC http://www.renesas.com 2010 4 1 http://www.renesas.com http://japan.renesas.com/inquiry 1. 2. 3. 4. 5. 6. 7. OA AV 8. 9. 10. RoHS 11. 12. 1. 2. 1 NPN RF NPN Silicon Germanium RF Transistor NESG3032M14 NESG3032M14 NPN SiGe RF 4 M ... | Original |
13 pages, |
NESG3032M14 datasheet abstract |
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| Abstract: 2010 4 1 NEC http://www.renesas.com 2010 4 1 http://www.renesas.com http://japan.renesas.com/inquiry 1. 2. 3. 4. 5. 6. 7. OA AV 8. 9. 10. RoHS 11. 12. 1. 2. 1 NPN RF NPN Silicon Germanium RF Transistor NESG210719 NESG210719 NPN SiGe RF 3 19 ... | Original |
11 pages, |
NESG210719-T1 NESG210719 datasheet abstract |
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| Abstract: 2010 4 1 NEC http://www.renesas.com 2010 4 1 http://www.renesas.com http://japan.renesas.com/inquiry 1. 2. 3. 4. 5. 6. 7. OA AV 8. 9. 10. RoHS 11. 12. 1. 2. 1 NPN RF NPN Silicon Germanium RF Transistor NESG204619 NESG204619 NPN SiGe RF 3 19 ... | Original |
10 pages, |
NESG204619-T1-A NESG204619-A NESG204619 datasheet abstract |
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| Abstract: 2010 4 1 NEC http://www.renesas.com 2010 4 1 http://www.renesas.com http://japan.renesas.com/inquiry 1. 2. 3. 4. 5. 6. 7. OA AV 8. 9. 10. RoHS 11. 12. 1. 2. 1 NPN RF NPN Silicon RF Twin Transistor PA828TD PA828TD NPN RF 2 6 M16, 1208 P ... | Original |
10 pages, |
2SC5436 datasheet abstract |
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| Abstract: 2010 4 1 NEC http://www.renesas.com 2010 4 1 http://www.renesas.com http://japan.renesas.com/inquiry 1. 2. 3. 4. 5. 6. 7. OA AV 8. 9. 10. RoHS 11. 12. 1. 2. 1 NPN RF NPN Silicon RF Transistor NE661M05 NE661M05 NPN RF 4 M05 NF = 1 ... | Original |
14 pages, |
NE661M05 datasheet abstract |
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| Abstract: 2010 4 1 NEC http://www.renesas.com 2010 4 1 http://www.renesas.com http://japan.renesas.com/inquiry 1. 2. 3. 4. 5. 6. 7. OA AV 8. 9. 10. RoHS 11. 12. 1. 2. 1 NPN RF NPN Silicon Germanium RF Transistor NESG3031M14 NESG3031M14 NPN SiGe RF 4 M ... | Original |
12 pages, |
NESG3031M14-T3-A NESG3031M14-T3 NESG3031M14-A NESG3031M14 datasheet abstract |
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| Abstract: 2010 4 1 NEC http://www.renesas.com 2010 4 1 http://www.renesas.com http://japan.renesas.com/inquiry 1. 2. 3. 4. 5. 6. 7. OA AV 8. 9. 10. RoHS 11. 12. 1. 2. 1 NPN RF NPN Silicon Germanium C RF Transistor NESG4030M14 NESG4030M14 NPN SiGe:C RF ... | Original |
12 pages, |
S21E NESG4030M14-T3-A NESG4030M14-T3 NESG4030M14-A NESG4030M14 datasheet abstract |
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| Abstract: 2010 4 1 NEC http://www.renesas.com 2010 4 1 http://www.renesas.com http://japan.renesas.com/inquiry 1. 2. 3. 4. 5. 6. 7. OA AV 8. 9. 10. RoHS 11. 12. 1. 2. 1 NPN RF NPN Silicon Germanium RF Transistor NESG3033M14 NESG3033M14 NPN SiGe RF 4 M ... | Original |
16 pages, |
NESG3033M14-T3-A NESG3033M14-T3 NESG3033M14-A NESG3033M14 NESG3032M14 GRM155B11H102KA01 AML1005H5N6STS datasheet abstract |
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| Abstract: 2010 4 1 NEC http://www.renesas.com 2010 4 1 http://www.renesas.com http://japan.renesas.com/inquiry 1. 2. 3. 4. 5. 6. 7. OA AV 8. 9. 10. RoHS 11. 12. 1. 2. 1 NPN RF NPN Silicon Germanium RF Transistor NESG2101M05 NESG2101M05 NPN SiGe RF 125 m ... | Original |
16 pages, |
NESG2101M05 NESG2101M05-T1 transistor T1J datasheet abstract |
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| Abstract: GHz TYP., S21e2 = 4.0 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz 2 2 Ã- 2SC5800 2SC5800 6 M16, 1208 Q1 ... | Original |
12 pages, |
2SC5800 datasheet abstract |
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| ) Return to top of page Sensors Pyroelectric Infrared Sensor No.S21E2.pdf (310kB Jul www.datasheetarchive.com/files/murata/cataloglibrary/eng/cataloge.html |
Murata | 21/08/2000 | 6.78 Kb | HTML | cataloge.html |