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Part : IDSS-21-S-12.00 Supplier : Samtec Manufacturer : Farnell element14 Stock : - Best Price : £5.47 Price Each : £9.74
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S21/S12

Catalog Datasheet MFG & Type PDF Document Tags

IC 14511

Abstract: IC 7439 =1V, IC=1mA, ZO=50 Freq(MHz) 100 S11 0.951 -21.08 S21 3.299 163.78 S12 0.063 76.46 , 47.40 0.197 7.15 0.414 -89.45 S11 S21 S12 S22 -22.83 S11 S21 S12 S22 VCE=1V, IC=3mA, ZO=50 Freq(MHz) 100 S11 0.887 -33.08 S21 8.146 158.07 S12 , 52.15 0.194 31.19 0.367 -109.84 S11 S21 S12 VCE=1V, IC=5mA, ZO=50 Freq(MHz) 100 S11 0.833 -43.47 S21 11.917 152.48 S12 0.056 66.29 S22 0.892 -30.79
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80GN01F IC 14511 IC 7439 IC 7416 base 6342 81202 D2706 21505AB TB-00000469

80GN01C

Abstract: ce 2826 ic 80GN01C S VCE=1V, IC=1mA, ZO=50 Freq(MHz) 100 S11 0.943 -20.45 S21 3.386 163.07 S12 , 1.008 36.19 0.220 24.73 0.476 -99.91 S11 S21 S12 S22 -24.43 S11 S21 S12 S22 VCE=1V, IC=3mA, ZO=50 Freq(MHz) 100 S11 0.866 -31.95 S21 7.993 155.21 , 1.373 39.63 0.270 37.93 0.305 -120.75 S11 S21 S12 VCE=1V, IC=5mA, ZO=50 Freq(MHz) 100 S11 0.799 -40.95 S21 11.314 149.36 S12 0.056 66.46 S22 0.867
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ce 2826 ic 14049 TB-00000465 2018B IT08267

80GN01M

Abstract: ic 4553 0.575 173.49 1.010 37.06 0.222 24.12 0.481 -106.58 S11 S21 S12 S22 -24.39 -43.73 S11 S21 S12 S22 VCE=1V, IC=3mA, ZO=50 Freq(MHz) 100 S11 0.886 -33.17 S21 8.175 156.07 S12 0.065 70.38 S22 0.921 200 0.799 -61.97 7.048 , 0.484 161.09 1.402 41.22 0.277 39.93 0.313 -130.24 S11 S21 S12 VCE=1V, IC=5mA, ZO=50 Freq(MHz) 100 S11 0.828 -42.89 S21 11.598 150.07 S12 0.061
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80GN01M ic 4553 81217 5942 TB-00000466 2059C

s-parameter s11 s12 s21 10000

Abstract: AM148 SELECTED S-PARAMETER DATA AM-101 S11 S21 S12 S22 FREQUENCY MAG ANG MAG ANG MAG ANG MAG ANG 5.0 , -71.9 0.12 -105.3 0.17 -167.6 AM-109 S11 S21 S12 S22 FREQUENCY MAG ANG MAG ANG MAG ANG MAG ANG , -168.4 162.0 141.9 AM-102 S11 S21 S22 S12 FREQUENCY MAG ANG MAG ANG MAG ANG MAG ANG 5.0 10.0 20.0 , 19.5 -10.8 -41.3 -68.8 AM-110 S11 S12 S21 S22 FREQUENCY MAG ANG MAG ANG MAG ANG MAG ANG 0.5 1.0 , 0.11 -80.4 0.20 -111.0 AM-103 S11 S21 S22 S12 FREQUENCY MAG ANG MAG ANG MAG ANG MAG ANG 5.0 10.0
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OCR Scan
s-parameter s11 s12 s21 10000 AM148 AM-191 AM-282 AM-210

a 3120 0537

Abstract: UPA802T 25 50 -j10 S22 0.1 GHz S11 0.1 GHz 100 180° S22 3.0 GHz S21 S12 3.0 GHz , mA FREQUENCY S11 S21 S12 S22 K (GHz) MAG ANG MAG ANG MAG ANG , S11 S22 - S21 S12 |S12| 2 |S12 S21| UPA802T TYPICAL SCATTERING PARAMETERS (TA = 25°C) j50 , 0.1 GHz S11 0.1 GHz 100 S22 3.0 GHz -j10 180° S21 0.1 GHz S12 3.0 GHz S21 3.0 , FREQUENCY S11 S21 S12 S22 K (GHz) MAG ANG MAG ANG MAG ANG MAG ANG
California Eastern Laboratories
Original
NE681 a 3120 0537 741 LEM 22S21 S21E UPA802T-T1

transistor s11 s12 s21 s22

Abstract: 741 LEM 25 50 -j10 S22 0.1 GHz S11 0.1 GHz 100 180° S22 3.0 GHz S21 S12 3.0 GHz , mA FREQUENCY S11 S21 S12 S22 K (GHz) MAG ANG MAG ANG MAG ANG , S11 S22 - S21 S12 |S12| 2 |S12 S21| UPA802T TYPICAL SCATTERING PARAMETERS (TA = 25°C) j50 , 0.1 GHz S11 0.1 GHz 100 S22 3.0 GHz -j10 180° S21 0.1 GHz S12 3.0 GHz S21 3.0 , FREQUENCY S11 S21 S12 S22 K (GHz) MAG ANG MAG ANG MAG ANG MAG ANG
Renesas Electronics
Original
transistor s11 s12 s21 s22 Transistor C 4927 c 3420 transistor hfe 4538 transistor c 5299 transistor j50

AZ 2535 08 101

Abstract: transistor 9747 10.24 9.83 9.42 9.14 8.80 8.51 8.27 Note: 1. Gain Calculation: MAG = |S21| |S12| (K ± , S12 |S12| 2 |S12 S21| UPA807T TYPICAL SCATTERING PARAMETERS (TA = 25°C) j50 90° 120 , Calculation: MAG = |S21| |S12| (K ± K 2- 1 ). When K 1, MAG is undefined and MSG values are , | | - |S11| - |S22| , = S11 S22 - S21 S12 |S12| 2 |S12 S21| UPA807T TYPICAL SCATTERING , S11 S21 S12 (GHz) MAG ANG MAG ANG 0.10 0.20 0.40 0.60 0.80 1.00 1.20
California Eastern Laboratories
Original
NE686 AZ 2535 08 101 transistor 9747 C 5478 transistor c 5929 transistor 6292 transistor 0845

transistor j50

Abstract: c 5929 transistor 10.24 9.83 9.42 9.14 8.80 8.51 8.27 Note: 1. Gain Calculation: MAG = |S21| |S12| (K ± , S12 |S12| 2 |S12 S21| UPA807T TYPICAL SCATTERING PARAMETERS (TA = 25°C) j50 90° 120 , Calculation: MAG = |S21| |S12| (K ± K 2- 1 ). When K 1, MAG is undefined and MSG values are , | | - |S11| - |S22| , = S11 S22 - S21 S12 |S12| 2 |S12 S21| UPA807T TYPICAL SCATTERING , S11 S21 S12 (GHz) MAG ANG MAG ANG 0.10 0.20 0.40 0.60 0.80 1.00 1.20
NEC
Original
9418 transistor transistor pt 6007 NPN transistor 9418 468-1 MAG UPA807T-T1 156-06

IC 7419

Abstract: 9331 so ) S11 S11 S21 S21 S12 S12 S22 S22 100 0.911 -38.35 3.396 150.54 , S11 S21 S21 S12 S12 S22 S22 100 0.734 -62.22 7.688 133.47 0.037 , S11 S21 S21 S12 S12 S22 S22 100 0.601 -77.46 10.083 123.30 0.032 , ) S11 S11 S21 S21 S12 S12 S22 S22 100 0.418 -98.93 12.653 110.98 , =5V, IC=15mA, ZO=50 Freq(MHz) S11 S11 S21 S21 S12 S12 S22 S22 -16.01 100
SANYO Electric
Original
IC 7419 9331 so A11103 A11102 A11101 A1110 15GN03NA 42809AB TC-00001956 A1110-1/6 IT08105 IT08106

8873 IC

Abstract: ic 8873 S21 S12 S12 S22 100 0.943 -36.97 3.273 155.15 0.043 69.08 0.967 , S21 S21 S12 S12 S22 S22 100 0.840 -62.35 7.872 140.90 0.036 59.22 , S21 S21 S12 S12 S22 S22 100 0.764 -78.80 10.674 132.18 0.032 , ) S11 S11 S21 S21 S12 S12 S22 S22 100 0.660 -103.13 14.230 120.64 , VCE=5V, IC=15mA, ZO=50 Freq(MHz) S11 S11 S21 S21 S12 S12 S22 S22 100
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15GN03S N2206 8873 IC ic 8873 80654 ta 8873 21805AB TB-00000419 2106B IT08123

n2206

Abstract: ic pt 2258 S11 S21 S21 S12 S12 S22 100 0.927 -39.48 3.051 153.95 0.045 66.57 , S11 S21 S21 S12 S12 S22 S22 100 0.819 -66.73 7.544 137.99 0.036 , S11 S21 S21 S12 S12 S22 S22 100 0.745 -85.56 10.487 129.32 0.031 , ) S11 S11 S21 S21 S12 S12 S22 S22 100 0.648 -111.11 13.755 118.07 , =15mA, ZO=50 Freq(MHz) S11 S11 S21 S21 S12 S12 S22 S22 100 0.608 -124.26
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Original
15GN03M ic pt 2258 PT 8519 TB-00000421 IT08096 IT08097

D0308

Abstract: 15GN03FA =5V, IC=1mA, ZO=50 Freq(MHz) S11 S11 S21 S21 S12 S12 S22 100 0.961 -34.18 , =5V, IC=3mA, ZO=50 Freq(MHz) S11 S11 S21 S21 S12 S12 S22 S22 100 0.892 , VCE=5V, IC=5mA, ZO=50 Freq(MHz) S11 S11 S21 S21 S12 S12 S22 S22 100 , -39.47 VCE=5V, IC=10mA, ZO=50 Freq(MHz) S11 S11 S21 S21 S12 S12 S22 S22 , S21 S12 S12 S22 S22 -21.03 100 0.738 -117.62 17.843 118.37 0.020
SANYO Electric
Original
15GN03FA D0308 IT08121 10358 17556 A1107 D0308AB TC-00001673 A1107-1/6 IT08114 A1107-5/6

ic 8873

Abstract: 8873 IC S21 S21 S12 S12 S22 100 0.943 -36.97 3.273 155.15 0.043 69.08 , S11 S21 S21 S12 S12 S22 S22 100 0.840 -62.35 7.872 140.90 0.036 , S11 S21 S21 S12 S12 S22 S22 100 0.764 -78.80 10.674 132.18 0.032 , ) S11 S11 S21 S21 S12 S12 S22 S22 100 0.660 -103.13 14.230 120.64 , VCE=5V, IC=15mA, ZO=50 Freq(MHz) S11 S11 S21 S21 S12 S12 S22 S22 100
SANYO Electric
Original
A1109 osc 59-22 A11096 IC 7429 ic 17358 15GN03SA O2908AB TC-00001671 A1109-1/6 IT08124 A1109-5/6

transistor pt 6007

Abstract: NPN transistor 9418 are used. MSG = 2 2 2 |S21| , K = 1 + | | - |S11| - |S22| , = S11 S22 - S21 S12 |S12| 2 |S12 S21 , are used. MSG = 2 2 2 |S21| , K = 1 + | | - |S11| - |S22| , = S11 S22 - S21 S12 |S12| 2 |S12 S21 , and MSG values are used. MSG = 2 2 2 |S21| , K = 1 + | | - |S11| - |S22| , = S11 S22 - S21 S12 |S12| 2 |S12 S21| MAG = Maximum Available Gain MSG = Maximum Stable Gain UPA807T TYPICAL , Calculation: MAG = |S21| |S12| S11 MAG 0.845 0.809 0.693 0.565 0.456 0.373 0.305 0.254 0.214 0.182 0.158
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transistor c 6093 transistor k 4212 5294 power transistor transistor 5478 of ic 7475

IC 7419

Abstract: ic 7130 .8064-3/6 15GN03N S VCE=5V, IC=1mA, ZO=50 Freq(MHz) S11 S11 S21 S21 S12 S12 S22 , 65.91 0.725 -64.11 VCE=5V, IC=3mA, ZO=50 Freq(MHz) S11 S11 S21 S21 S12 S12 , 61.55 0.633 -61.70 VCE=5V, IC=5mA, ZO=50 Freq(MHz) S11 S11 S21 S21 S12 S12 , 59.91 0.598 -60.59 VCE=5V, IC=10mA, ZO=50 Freq(MHz) S11 S11 S21 S21 S12 S12 , S21 S21 S12 S12 S22 S22 100 0.336 -111.37 13.633 105.51 0.023
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ic 7130 TB-00000414 2004B

IC 7483

Abstract: n2206 =1mA, ZO=50 Freq(MHz) S11 S11 S21 S21 S12 S12 S22 100 0.918 -34.17 3.328 , =3mA, ZO=50 Freq(MHz) S11 S11 S21 S21 S12 S12 S22 S22 100 0.799 -55.14 , =5mA, ZO=50 Freq(MHz) S11 S11 S21 S21 S12 S12 S22 S22 100 0.703 -69.63 , =10mA, ZO=50 Freq(MHz) S11 S11 S21 S21 S12 S12 S22 S22 100 0.568 -91.34 , 15GN03C S VCE=5V, IC=15mA, ZO=50 Freq(MHz) S11 S11 S21 S21 S12 S12 S22 S22
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IC 7483 16166 TB-00000416 IT08087 IT08088

ic pt 2258

Abstract: ic ps 6206 No. A1108-3/6 15GN03MA S VCE=5V, IC=1mA, ZO=50 Freq(MHz) S11 S11 S21 S21 S12 , 55.74 0.796 -41.83 S22 VCE=5V, IC=3mA, ZO=50 Freq(MHz) S11 S11 S21 S21 S12 , S21 S12 S12 S22 S22 100 0.648 -111.11 13.755 118.07 0.025 49.17 , =50 Freq(MHz) S11 S11 S21 S21 S12 S12 S22 S22 100 0.608 -124.26 15.141 , =50 Freq(MHz) S11 S11 S21 S21 S12 S12 S22 S22 100 0.587 -132.33 15.887
SANYO Electric
Original
ic ps 6206 Z/lm+8846 A1108 TC-00001669 A1108-1/6 A1108-5/6 A1108-6/6

313-105

Abstract: 12697 =1V, IC=1mA, ZO=50 Freq(MHz) S11 S11 S21 S21 S12 S12 S22 S22 100 0.943 , =50 Freq(MHz) S11 S11 S21 S21 S12 S12 S22 S22 100 0.866 -31.95 7.993 , ) S11 S11 S21 S21 S12 S12 S22 S22 100 0.799 -40.95 11.314 149.36 , S21 S21 S12 S12 S22 S22 100 0.680 -55.88 16.029 140.14 0.051 , ) VCE=1V, IC=15mA, ZO=50 S11 S21 S21 S12 S12 S22 S22 0.613 -65.18 18.167
SANYO Electric
Original
313-105 12697 6822 npn ENN8113

ZO 607 MA

Abstract: transistor zo 607 80GN01F S Parameters (Common emitter) VCE=1V, IC=1mA, ZO=50 Freq(MHz) S11 S11 S21 S21 S12 , 0.414 -89.45 VCE=1V, IC=3mA, ZO=50 Freq(MHz) S11 S11 S21 S21 S12 S12 S22 , -109.84 VCE=1V, IC=5mA, ZO=50 Freq(MHz) S11 S11 S21 S21 S12 S12 S22 S22 100 , =10mA, ZO=50 Freq(MHz) S11 S11 S21 S21 S12 S12 S22 S22 100 0.745 -61.60 , Parameters (Common emitter) VCE=1V, IC=15mA, ZO=50 S21 S21 S12 S12 S22 S22 -73.54
SANYO Electric
Original
ZO 607 MA transistor zo 607 6603 10183 0409 7648 ENN8120

n2206

Abstract: 10358 15GN03F S VCE=5V, IC=1mA, ZO=50 Freq(MHz) S11 S11 S21 S21 S12 S12 S22 100 , -41.02 S22 VCE=5V, IC=3mA, ZO=50 Freq(MHz) S11 S11 S21 S21 S12 S12 S22 S22 , 0.687 -40.32 VCE=5V, IC=5mA, ZO=50 Freq(MHz) S11 S11 S21 S21 S12 S12 S22 , 58.93 0.643 -39.47 VCE=5V, IC=10mA, ZO=50 Freq(MHz) S11 S11 S21 S21 S12 S12 , ) S11 S11 S21 S21 S12 S12 S22 S22 -21.03 100 0.738 -117.62 17.843
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TB-00000417

transistor npn m 9587

Abstract: transistor m 9587 emitter) VCE=1V, IC=1mA, ZO=50 Freq(MHz) S11 S11 S21 S21 S12 S12 S22 S22 100 , =3mA, ZO=50 Freq(MHz) S11 S11 S21 S21 S12 S12 S22 S22 100 0.886 -33.17 , (MHz) S11 S11 S21 S21 S12 S12 S22 S22 100 0.828 -42.89 11.598 , ) S11 S11 S21 S21 S12 S12 S22 S22 100 0.724 -59.96 16.659 140.63 , emitter) VCE=1V, IC=15mA, ZO=50 S21 S21 S12 S12 S22 S22 -70.58 19.101 135.39
SANYO Electric
Original
transistor npn m 9587 transistor m 9587 ic 5518 ENN8121

ACPF-8040

Abstract: 285u 2400 MHz. ACPF-8040 Electrical Specifications [2], Z0 = 50 , TC [1] Symbol S21 (S12) S21 (S12) S21 (S12) S21 (S12) S21 (S12) S21 (S12) S21 (S12) Parameter Insertion Loss 3GPP Band 40 (20 MHz , 45 11.4 26 17 (1.3) 18 (1.3) 17 35 50 52 37 11 22 48 50 35 S21 (S12) S21 (S12) S21 (S12) S11
Avago Technologies
Original
JESD22-A113D 285u 8 pin SMD s12 H-JE0008-01 H-JE0012-01 ACPF-8040-BLK ACPF-8040-TR1 AV02-3746EN

V64 SOT 23

Abstract: transistor marking v64 ghz -1 5.00 -1.5 270° VDS = 2 V, IDS = 5 mA FREQUENCY S11 S21 S12 (GHz) MAG , = |S21| |S12| (K ± K 2- 1 ). When K 1, MAG is undefined and MSG values are used. MSG = , |S22| , = S11 S22 - S21 S12 |S12| 2 |S12 S21| NE34018 TYPICAL SCATTERING PARAMETERS (TA = 25 , ° VDS = 2 V, IDS = 10 mA FREQUENCY S11 S21 S12 (GHz) MAG ANG MAG ANG 0.50 , 12.618 11.939 11.320 10.752 10.298 9.917 Note: 1. Gain Calculations: MAG = |S21| |S12
California Eastern Laboratories
Original
V64 SOT 23 transistor marking v64 ghz 16118 NE34018-TI-63-A NE34018-TI-64-A NE34018-A

HPND-4028 pin diode

Abstract: -0.40 -0.40 -0.40 -0.40 -0.40 -0.42 -0.42 -0.44 -0.44 -0.46 S21 /S12 Mag. 0.958 0.956 0.957 0.957 0.956 , -0.26 -0.26 -0.30 -0.28 -0.28 -0.30 -0.32 S21 /S12 Mag. 0.973 0.971 0.972 0.971 0.971 0.971 0.971 0.970 , -0.26 -0.26 -0.28 S21 /S12 Mag. Ang. 0.978 0.975 0.975 0.975 0.975 0.974 0.975 0.974 0.974 0.974 0.975 , -9.54 -9.10 -8.86 -8.44 -8.34 -8.04 -7.94 -8.00 S21 /S12 Mag. 0.042 0.082 0.121 0.157 0.189 0.219 0.247 , -11.84 -11.44 -10.80 -10.56 -10.12 -9.96 -9.94 S21 /S12 Mag. Ang. 0.022 0.043 0.066 0.088 0.109 0.131
Hewlett-Packard
Original
HPND-4028 pin diode HPND-4028 HPND-4038 5965-8878E 5967-6157E

HPND-4018

Abstract: s-parameter s11 s12 s21 10000 -1 5 10 14 18 20 22 24 26 27 28 28 29 30 30 31 31 32 IF = 5 mA dB S21 /S12 , 49 48 49 dB S21 /S12 Mag. 0.958 0.957 0.957 0.957 0.956 0.956 0.957 0.955 0.955 , -0.32 -0.32 -0.32 -0.32 -0.32 -0.32 -0.32 -0.32 -0.34 -0.34 -0.34 -0.36 -0.36 S21 /S12 , VR = 10 V dB S21 /S12 Mag. Ang. -33.16 -27.54 -24.30 -22.28 -20.74 -19.50 -18.42 , -36 2-89 VR = 30 V dB S21 /S12 Mag. Ang. -39.18 -32.78 -29.12 -26.76 -24.90
Hewlett-Packard
Original
HPND-4018 s-parameter s11 s12 s21 ablestik 958 beam lead PIN diode hp 4028 ultrasonic phased array

ic ta 7699

Abstract: 80GN01C S Parameters (Common emitter) VCE=1V, IC=1mA, ZO=50 Freq(MHz) S11 S11 S21 S21 S12 , 0.476 -99.91 VCE=1V, IC=3mA, ZO=50 Freq(MHz) S11 S11 S21 S21 S12 S12 S22 , -120.75 VCE=1V, IC=5mA, ZO=50 Freq(MHz) S11 S11 S21 S21 S12 S12 S22 S22 100 , =10mA, ZO=50 Freq(MHz) S11 S11 S21 S21 S12 S12 S22 S22 100 0.680 -55.88 , Parameters (Common emitter) VCE=1V, IC=15mA, ZO=50 S11 S21 S21 S12 S12 S22 S22 0.613
SANYO Electric
Original
ic ta 7699 ta 8659 an

6603 10183

Abstract: 8906 ic 7.15 0.414 -89.45 VCE=1V, IC=3mA, ZO=50 Freq(MHz) S11 S11 S21 S21 S12 S12 , -109.84 VCE=1V, IC=5mA, ZO=50 Freq(MHz) S11 S11 S21 S21 S12 S12 S22 S22 100 , =10mA, ZO=50 Freq(MHz) S11 S11 S21 S21 S12 S12 S22 S22 100 0.745 -61.60 , 0.629 600 0.623 S11 S21 S21 S12 S12 S22 S22 -73.54 20.028 138.70 , VCE=1V, IC=20mA, ZO=50 Freq(MHz) S11 S11 S21 S21 S12 S12 S22 S22 100
SANYO Electric
Original
8906 ic zf 9050

TRANSISTOR 3358

Abstract: transistor 9527 = 1 mA FREQUENCY S11 S21 S12 S22 K (GHz) MAG ANG MAG ANG MAG , Note: 1. Gain Calculation: MAG = |S21| |S12| (K ± K 2- 1 ). When K 1, MAG is undefined , |S21| , K = 1 + | | - |S11| - |S22| , = S11 S22 - S21 S12 |S12| 2 |S12 S21| UPA806T TYPICAL SCATTERING PARAMETERS (TA = 25°C) UPA806T(Q1) VCE = 2 V, IC = 5 mA FREQUENCY S11 S21 S12 S22 , 10.141 9.637 9.254 8.783 Note: 1. Gain Calculation: MAG = |S21| |S12| (K ± K 2- 1 ).
California Eastern Laboratories
Original
NE685 TRANSISTOR 3358 transistor 9527 LB 4890 of IC 9290 transistor 5610 NEC 9724 transistor

HPND-4028 pin diode

Abstract: hpnd pin 0.01 pF mA dB S21 /S12 Mag. Ang. -0.38 -0.40 -0.40 -0.40 -0.40 -0.40 -0.40 -0.40 -0.40 , dB S21 /S12 Mag. Ang. -0.24 -0.26 -0.26 -0.26 -0.26 -0.26 -0.26 -0.28 -0.28 -0.28 , 0.140 19 37 47 53 58 60 62 63 63 63 63 62 62 61 60 60 57 56 dB S21 /S12 Mag , -37 -40 -42 -44 -46 -48 -50 VR = 10 V dB S21 /S12 Mag. Ang. -27.54 -21.74 , S21 /S12 Mag. Ang. 0.022 0.043 0.066 0.088 0.109 0.131 0.054 0.174 0.195 0.213 0.235
Agilent Technologies
Original
hpnd pin 0.01 pF HPND4028 HPND4038 4028 BE MIL-S-19500

transistor npn m 9587

Abstract: C 5478 transistor (Common emitter) VCE=1V, IC=1mA, ZO=50 Freq(MHz) S11 S11 S21 S21 S12 S12 S22 S22 , VCE=1V, IC=3mA, ZO=50 Freq(MHz) S11 S11 S21 S21 S12 S12 S22 S22 100 , =5mA, ZO=50 Freq(MHz) S11 S11 S21 S21 S12 S12 S22 S22 100 0.828 -42.89 , (MHz) S11 S11 S21 S21 S12 S12 S22 S22 100 0.724 -59.96 16.659 , (Common emitter) VCE=1V, IC=15mA, ZO=50 S21 S21 S12 S12 S22 S22 -70.58 19.101
SANYO Electric
Original
3994 0303
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