TRS10V65H
|
|
Toshiba Electronic Devices & Storage Corporation
|
SiC Schottky Barrier Diode (SBD), 650 V,104 A, DFN8×8 |
|
|
54102-S05-00
|
|
Amphenol Communications Solutions
|
54102-S05-00-BERGSTRIP 0.100\\ HDR |
|
|
2SK1157-E
|
|
Renesas Electronics Corporation
|
Silicon N Channel MOSFET, TO-220AB, /Tube |
|
|
2SK1154-E
|
|
Renesas Electronics Corporation
|
Silicon N Channel MOSFET, TO-220AB, /Tube |
|
|
2SK1155-E
|
|
Renesas Electronics Corporation
|
Silicon N Channel MOSFET, TO-220AB, /Tube |
|
|
2SK1151STR-E
|
|
Renesas Electronics Corporation
|
Nch Single Power Mosfet 450V 1.5A 5500Mohm DPAK(S)/To-252 |
|
|