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LT3571IUD#PBF Linear Technology LT3571 - 75V DC/DC Converter for APD Bias; Package: QFN; Pins: 16; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT3571EUD#PBF Linear Technology LT3571 - 75V DC/DC Converter for APD Bias; Package: QFN; Pins: 16; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT3571IUD#TRPBF Linear Technology LT3571 - 75V DC/DC Converter for APD Bias; Package: QFN; Pins: 16; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT3571EUD#TRPBF Linear Technology LT3571 - 75V DC/DC Converter for APD Bias; Package: QFN; Pins: 16; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ESW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy

Rise time of photo transistor

Catalog Datasheet MFG & Type PDF Document Tags

MRD810

Abstract: = 100 ohms. Note 1) II 1.0 - â'" mA Photo Current Saturated Rise Time (Note 3) 'risati - 2.0 - ws Photo Current Saturated Fall Time (Note 3) tf(sat) - 25 - es Photo Current Rise Time (Note 4} tr - - 5.0 MS Photo Current Fall Time (Note 4) tf - - 6.0 JiS NOTES: 1. Radiation flux density (H) equal , MRD810 (Silicon) NPN SILICON PHOTO TRANSISTOR . . . designed for application in card and tape , VOLTS NPN SILICON PHOTO TRANSISTOR 250 MILLIWATTS Iâ'"A â'" r-t- SEATING PLANE STYLE 2: PIN 1
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TEMP-28

TRANSISTOR SMD MARKING CODE p1

Abstract: EL series SMD transistor 4 PIN DIP HIGH VOLTAGE PHOTO DARLINGTON EL852 Series TRANSISTOR PHOTOCOUPLER Features: · High , 18, 2011 4 PIN DIP HIGH VOLTAGE PHOTO DARLINGTON EL852 Series TRANSISTOR PHOTOCOUPLER Electrical , capacitance Cut-off frequency Rise time Fall time * Typical values at Ta = 25° C Symbol CTR Min. 1000 5×10 10 , VOLTAGE PHOTO DARLINGTON EL852 Series TRANSISTOR PHOTOCOUPLER Typical Performance Curves Everlight , 4 PIN DIP HIGH VOLTAGE PHOTO DARLINGTON EL852 Series TRANSISTOR PHOTOCOUPLER Everlight
EVERLIGHT
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TRANSISTOR SMD MARKING CODE p1 EL series SMD transistor 815Y smd code s1 TRANSISTOR TRANSISTOR SMD MARKING CODE 4 pin dip photo transistor DPC-0000056

SMD Transistor SS F

Abstract: TRANSISTOR 707 Channel 2: 2 Channels 4: 4 Channels Output Configuration 1: Single Photo Transistor 2: Darlington Photo Transistor 3: (6-pin only) Single Photo Transistor without base terminal Output Type Collector Emitter , Floating capacitance Cut-off frequency Response time (Rise) Response time (Fall) Symbol VF VFM IR Ct ICEO , Response Rise Time (us) Response Rise Time (us) Forward Current IF (mA) Load Resistance RL (Kohm , ISOCOUPLERTM WPPC-D11066 Series High REliability Photo Coupler DIP/ SMD/ H USR/CNR Listed
World Products
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SMD Transistor SS F TRANSISTOR 707 smd transistor 026 transistor smd 06 E223387

SMD transistor MARKING CODE 43

Abstract: Split System Air Conditioner Configuration 1: Single Photo Transistor 2: Darlington Photo Transistor 3: (6-pin only) Single Photo , =100ohm - 80 - kHz - 5 20 us - 4 20 us Response time (Rise) tr , Resistance Response Rise Time (us) Response Rise Time (us) Fig.10 Response Time vs. Load Resistance , ISOCOUPLERTM High REliability Photo Coupler DIP/ SMD/ H WPPC-D11066 Series USR/CNR , ) (1) (3) (4) (5) (6) (7) (8) - TRU (9) (1) Photo Coupler (2
World Products
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SMD transistor MARKING CODE 43 Split System Air Conditioner SMD 6PIN IC MARKING CODE TRANSISTOR SMD MARKING CODE PD TRANSISTOR SMD MARKING CODE 42 SMD transistor code NC
Abstract: conversion circuit Optically coupled transistor circuit b72424D G Dlfm fl 328 GEM OC360 PHOTO , ,72424G ODlflTM1 TbO ! ¿ I (LED) (LED) (LED) (LED) (Photo transistor) (Photo transistor) (Photo transistor) (Photo transistor) 329 OC360 PHOTO COUPLERS A BSO LU TE MAXIMUM RATINGS , Rise Time Response Characteristics Fall Time b 7 2 4 2 4 G â¡â¡IÃ' l SD 7 0 S 330 Unit , OKI electronic components O C360 PHOTO COUPLER GEN ERA L DESCRIPTION The OC360 is a -
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CXZ360 E86831 72424D 24B40 L724240

color sensitive PHOTO TRANSISTOR

Abstract: Rise time of photo transistor Silicon photo transistor KDT3002A The KDT3002A is high sensitivity NPN silicon photo [Unit : mm] Dimensions transistor mounted in 3mm(T-1) all plastic mold type. This photo transistor is both compact and easy to mount. Features Higly sensitive photo transistor Visable ray cut off , tr tf 1 Color temp. =2856K Standard Tungsten lamp Response Time(Rise Time) Response Time(Fall , photo transistor KDT3002A DYNAMIC CHARACTERISTICS Power dissipation Vs. Ambient temperature
Kodenshi
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color sensitive PHOTO TRANSISTOR Rise time of photo transistor 3mm photo transistor npn photo transistor

6 pin TRANSISTOR SMD CODE PA

Abstract: d1106 Transistor 2: Darlington Photo Transistor 3: (6-pin only) Single Photo Transistor without base terminal , Isolation resistance Floating capacitance Cut-off frequency Response time(Rise) Response time(Fall) Symbol , ) Response Rise Time (us) Load Resistance RL(K ohm) Response Rise Time (us) Load Resistance RL(K ohm , ISOCOUPLER Example part number: (1) (2) (3) TM PHOTO COUPLER STANDARD, DIGITAL HIGH SPEED, SOP, & SSOP WPPC - D 1 2 30 4 B A - TRU (4) (5) (6) (7) (8) (9) (1) Photo Coupler (2) Input A: AC D: DC
World Products
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6 pin TRANSISTOR SMD CODE PA d1106 TRANSISTOR SMD MARKING CODE pa smd transistor marking PA d1108 6 pin IC SMD CODE PA D1106 D1108
Abstract: Silicon photo transistor KDT3002A Dimensions The KDT3002A is high sensitivity NPN silicon photo transistor mounted in [Unit : mm] 3mm(T-1) all plastic mold type. This photo transistor is both compact and easy to mount. Features Higly sensitive photo transistor Visable ray cut , lamp Response Time(Rise Time) Response Time(Fall Time) -1- 880 - nm - ±30 - deg. - Viewing Angle - - p 2.5 4.7 - Silicon photo transistor KDT3002A Kodenshi
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PHOTO TRANSISTOR

Abstract: photo transistor high current PRODUCTION SPECIFICATION PRODUCT LINE : PHOTO TRANSISTOR TITLE : HI-T70MB 1. GENERAL DESCRIPTION The HI-T70MB is a high sensitive NPN silicon photo transistor mounted in TO-18 type header with clear epoxy encapsulation. This photo transistor have awide angular response and relatively low cost , Ic=2mA, Ev=2000Lux 0.2 mA 0.4 V Response time (Rise) tr Vcc=10V, Ic=5mA 8 , ~ 1050 ±70 nm deg. PRODUCTION SPECIFICATION PRODUCT LINE : PHOTO TRANSISTOR TITLE : HI-T70MB
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PHOTO TRANSISTOR photo transistor high current 2000L

SMD 6PIN IC MARKING CODE

Abstract: 6 pin TRANSISTOR SMD CODE PA Transistor 2: Darlington Photo Transistor 3: (6-pin only) Single Photo Transistor without base terminal , Floating capacitance Cut-off frequency Response time (Rise) Response time (Fall) Symbol VF VFM IR Ct ICEO , Response Rise Time (us) Forward Current IF (mA) Load Resistance RL (Kohm) WORLD PRODUCTS INC. http , ISOCOUPLER Example part number: (1) (2) (3) TM PHOTO COUPLER STANDARD, DIGITAL HIGH SPEED, SOP, & SSOP WPPC - D 1 1 06 6 E D - TLD (4) (5) (6) (7) (8) (9) (1) Photo Coupler (2) Input A: AC D: DC
World Products
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WPPC-D11066ED MARKING Pa 6pin TRANSISTOR ic smd 6pin for power supply MARKING SMD IC CODE 6pin 6 pin TRANSISTOR SMD CODE tm TRANSISTOR SMD MARKING CODE H

transistor 1052

Abstract: p317d Waitrony Photo Transistor Module No.: WPDT-317D 1. General Description: The WPDT-317D is a high output NPN photo darlington transistor mounted in an end looking black epoxy package. This small photo darlington transistor permits narrow angular response. 2. Features > Compact (03mm) > High , â'"26 MINâ'" -â¡0.5 1-r â'"0.8 Max P-317D UNITrmm Waitrony Photo Transistor Module No.: WPDT , Input I , output_-r\=-1052 ta-M-i i i 1-Hr tf-J-J O Output td: Delay Time tr: Rise Time tf
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transistor 1052 p317d photo darlington sensor 1000L

OF IC 317

Abstract: 317 TRANSISTOR Waitrony Photo Transistor Module No.: WPDT-317 1. General Description: The WPDT-317 is a high output NPN photo darlington transistor mounted in a clear end looking epoxy package. This small photo darlington transistor permits narrow angular response. 2. Features > Compact (03mm) > High , ri -26 MINâ'" -â¡0.5 -FF P â'"317 S â¡ 0.5-1 -0.8 Max UNIT:mm Waitrony Photo Transistor , Time tr: Rise Time tf: Fall Time "i- td-M-l I I l-kr tfJ-J Collector Current vs Luminous
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OF IC 317 317 TRANSISTOR ML 317

OST-9N15

Abstract: color sensitive PHOTO TRANSISTOR otherwise noted. December 2005 Rev 1.0 OST-9N15 PHOTO TRANSISTOR Reflow Temp / Time , 2005 Rev 1.0 OST-9N15 PHOTO TRANSISTOR Test items and results of reliability Type Test , OST-9N15 PHOTO TRANSISTOR General Description The OST-9N15 is high sensitivity NPN silicon , usec usec deg. December 2005 Rev 1.0 OST-9N15 PHOTO TRANSISTOR FIG.2 NORMALIZED COLLECTOR , 0 25 50 75 100 125 TA-Ambient Temperature - FIG.3 RISE AND FALL TIME VS. LOAD
OPTO-Sensor
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OST9N15 transistor d 1303

photo transistor high current

Abstract: phototransistor 302 OST-302 PHOTO TRANSISTOR General Description The OST-302 is high sensitivity NPN silicon , Rise time Switching speeds RL=100 tf Fall time Spectral sensitivity p Peak wavelength Half , December 2005 Rev 1.0 OST-302 PHOTO TRANSISTOR December 2005 Rev 1.0 OST-302 PHOTO , Applications Optical switches Photo interrupters MAXIMUM RATINGS Item C-E voltage E-C voltage , Unit V V mA mW * 1 For MAX. 5 secends at the position of 2mm from the package
OPTO-Sensor
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phototransistor 302 A 720 transistor TRansistor A 940 720 transistor 302 phototransistor

733HC

Abstract: CCDs Charge Coupled Devices '¢ CCD transmission efficiency greater than 99.995% â'¢ Photo detector configured of PN junction , Transistor Drain Voltage Vod 11.4 12 12.6 V Output Gate Voltage Vog 4.75 5 5.25 V Photo Gate Voltage , . Max. Unit Note Register Rise time tr â'" 30 100 ns ns *1 Fall time tn(> â'" 20 100 Overlap time to1,2 0 20 100 ns *2 Blanktime tB1. 2 â'" 20 100 ns *3 Phototransfer Rise time W>T â'" 30 , tsT 0 1 10 ^s Hold time tH*T 0 1 10 US Reset Rise time tr
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OPA2048CA 733HC CCDs Charge Coupled Devices tr4l 2SC372 QPA2048CA OPA2048C 72MS40 OPA2Q48CA L72H24D

waitrony

Abstract: WPDT-270 Waitrony Photo Transistor Module No.: WPDT-270 1. General Description: The WPDT-270 is a high output NPN photo darlington transistor mounted in a water clear end looking epoxy package. This small photo darlington transistor permits narrow angular response. 2. Features > Compact (03mm) > End , -i -0.8 Max 3.5±0.2 PDT-270 3.9±0.2 Iâ'" UNIT:mm Waitrony Photo Transistor Module No.: WPDT , Test Conditions Input Input Output O Output td: Delay Time tr: Rise Time tf: Fall Time -90%
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waitrony

SMD 5c Transistor

Abstract: MAX280 *Customer: SPECIFICATION ITEM MODEL PART NO. Photo Transistor SSC-PTR202-IX0 [Contents , (Rise time) Tr Response (Fall time) Tf SSC-QP-0401-06(REV.0) Condition VCE=10V, E , Transistor is correspond SMD, when Photo Transistor be soldered dip, interfacial separation may affect the , . LED Surface temperature °C Operation heating 240 150 Pre-heating Temperature rise: 5 , Pre-heating Temperature rise: 5°C/sec. Cooling: -5°C/sec. ~ 120 0 60 to 120 sec. 10 to 20
Seoul Semiconductor
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SSC-PTR202 SMD 5c Transistor MAX280
Abstract: -5L6 PHOTO TRANSISTOR Lamp Condition In the automatic mounting of LAMP LED to the L/F , any bending , OST-5L6 PHOTO TRANSISTOR General Description The OST-5L6 is high sensitivity NPN silicon , voltage IC=2mA , IB=100uA A Radiant sensitivity area Peak sensitive wavelength p tr Rise time VCC , . December 2005 Rev 1.0 OST-5L6 PHOTO TRANSISTOR 0 0 5 4 3 2 25 .5 75 1.0 1.25 December 2005 Rev 1.0 OST-5L6 PHOTO TRANSISTOR Reliability Test OPTO-Sensor
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TR940

transistor circuit

Abstract: 357 photo O K I electronic components OC33 PHOTO COUPLER GENERAL DESCRIPTION The OC33 is a combination of a light emission diode (GaAs LED) and a light receiving silicon photo transistor. FEATURES · , View) (LED) Anode Cathode (LED) Emitter (Photo transistor) Collector (Photo transistor) (Case) 7. Base (Photo transistor) 1. 2. 3. 5. © 351 · O C 3 3 « , Rise time V C E (SAT} IC = 2 m A , lF = 1 6 m A Switching times Char acteristics Fall time
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transistor circuit 357 photo

R2h DIODE

Abstract: CCDs Charge Coupled Devices . Max. Unit Note Register Rise time W â'" 30 100 ns *1 Fall time t«t> â'" 20 100 ns Overlap time t01,2 0 20 100 ns *2 Blank time tB1.2 â'" 20 100 ns *3 Phototranster Rise time tr+T â'" 30 , tsT 0 1 10 US Hold time tHT 0 1 10 US Reset Rise time tr«t>R â'" 30 100 ns *5 Fall time , Note Min. Typ. Max. Video Rise Delay Time tdrv â'" 55 â'" ns â'" Video Rise Time trv â'" 55 â , OPA256C-1 is a 256-bit, 1-dimensional diode array comprised of PN junction photodetector diodes and CCDs
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R2h DIODE A2LB images of 74107 photo diode array amplifier
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