| Abstract: RN2312 RN2312,RN2313 PNP (PCT) () RN2312 RN2312,RN2313 : mm , , RN1312 RN1312, RN1313 RN1313 (Ta = 25癈) JEDEC VCBO 50 V VCEO 50 , RN2312 RN2312 RN2313 VCE (sat) fT Cob 100 nA nA 100 , R1 1 k 2007-11-01 RN2312 RN2312,RN2313 2 2007-11-01 RN2312 RN2312,RN2313 3 2007-11-01 RN2312 RN2312,RN2313 RN2312 RN2312 RN2313 4 2007-11-01 RN2312 RN2312,RN2313 � � ... |
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RN2313 RN2312 RN1313 RN1312 RN2312 abstract |
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| Abstract: RN2312 RN2312,RN2313 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2312 RN2312,RN2313 , Input resistor RN2312 RN2312 RN2313 Typ. Max Unit VCB =-50V, IE =0 -100 nA , 2000-09-14 1/4 RN2312 RN2312,RN2313 961001EAA2 961001EAA2' · The information contained herein is presented only as , without notice. 2000-09-14 2/4 RN2312 RN2312,RN2313 2000-09-14 3/4 RN2312 RN2312,RN2313 Type Name Marking RN2312 RN2312 RN2313 2000-09-14 4/4 ... |
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251.94 Kb
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RN2313 RN2312 RN1313 RN1312 RN2312 abstract |
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| Abstract: RN2312 RN2312,RN2313 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2312 RN2312,RN2313 , RN2312 RN2312 RN2313 Max Unit VCB =-50V, IE =0 -100 nA VEB = -5V, IC = 0 , 28.6 32.9 47 61.1 1 k 2001-06-07 RN2312 RN2312,RN2313 2 2001-06-07 RN2312 RN2312,RN2313 3 2001-06-07 RN2312 RN2312,RN2313 Type Name Marking RN2312 RN2312 RN2313 4 2001-06-07 RN2312 RN2312,RN2313 RESTRICTIONS ON PRODUCT USE 000707EAA 000707EAA · TOSHIBA is continually working to improve ... |
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5 pages,
155.13 Kb
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toshiba Transistor Silicon pct RN2313 RN2312 RN1313 RN1312 RN2312 abstract |
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| Abstract: RN2312 RN2312,RN2313 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2312 RN2312,RN2313 , RN2312 RN2312 RN2313 Max Unit VCB =-50V, IE =0 -100 nA VEB = -5V, IC = 0 , 28.6 32.9 47 61.1 1 k 2001-06-07 RN2312 RN2312,RN2313 2 2001-06-07 RN2312 RN2312,RN2313 3 2001-06-07 RN2312 RN2312,RN2313 Type Name Marking RN2312 RN2312 RN2313 4 2001-06-07 RN2312 RN2312,RN2313 RESTRICTIONS ON PRODUCT USE 000707EAA 000707EAA · TOSHIBA is continually working to improve ... |
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5 pages,
236.98 Kb
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RN2313 RN2312 RN1313 RN1312 RN2312 abstract |
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| Abstract: RN2312 RN2312,RN2313 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2312 RN2312,RN2313 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm With built-in , Emitter cut-off current IEBO DC current gain Characteristic Input resistor RN2312 RN2312 RN2313 , 47 61.1 1 k 2007-11-01 RN2312 RN2312,RN2313 2 2007-11-01 RN2312 RN2312,RN2313 3 2007-11-01 RN2312 RN2312,RN2313 Type Name Marking RN2312 RN2312 RN2313 4 2007-11-01 RN2312 RN2312,RN2313 ... |
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5 pages,
284.55 Kb
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RN2313 RN2312 RN1313 RN1312 RN2312 abstract |
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| Abstract: RN1312 RN1312,RN1313 RN1313 NPN (PCT) () RN1312 RN1312,RN1313 RN1313 : mm , , RN2312 RN2312, RN2313 JEDEC JEITA (Ta = 25癈) VCBO 50 VCEO 50 VEBO 5 : 0.006 g () V 2�1A V SC� V IC 100 mA PC 100 mW Tj 150 癈 Tstg 55150 癈 : (//) ( / ) () () 1 2007-11-01 RN1312 RN1312,RN1313 RN1313 (Ta = ... |
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6 pages,
431.98 Kb
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RN2313 RN2312 RN1313 RN1312 RN1312 abstract |
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| Abstract: RN1312 RN1312,RN1313 RN1313 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1312 RN1312,RN1313 RN1313 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit in mm With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN2312 RN2312, RN2313 Equivalent Circuit Maximum Ratings (Ta = 25°C) ° Characteristic Symbol Rating Unit Collector-base voltage VCBO 50 V JEDEC Collector-emitter ... |
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4 pages,
169.4 Kb
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RN2313 RN2312 RN1313 RN1312 RN1312 abstract |
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| Abstract: RN1312 RN1312,RN1313 RN1313 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1312 RN1312,RN1313 RN1313 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit: mm With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN2312 RN2312, RN2313 Equivalent Circuit Maximum Ratings (Ta = 25°C) ° Characteristic Symbol Rating Unit Collector-base voltage VCBO 50 V Collector-emitter voltage ... |
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5 pages,
254.18 Kb
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RN2313 RN2312 RN1313 RN1312 RN1312 abstract |
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| Abstract: RN1312 RN1312,RN1313 RN1313 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1312 RN1312,RN1313 RN1313 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit: mm l With built-in bias resistors l Simplify circuit design l Reduce a quantity of parts and manufacturing process l Complementary to RN2312 RN2312, RN2313 Equivalent Circuit Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Collector-base voltage VCBO 50 V Collector-emitter ... |
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5 pages,
172.27 Kb
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RN2313 RN2312 RN1313 RN1312 RN1312 abstract |
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| Abstract: RN1312 RN1312,RN1313 RN1313 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1312 RN1312,RN1313 RN1313 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN2312 RN2312, RN2313 Equivalent Circuit Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Collector-base voltage VCBO 50 V Collector-emitter voltage ... |
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282.53 Kb
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RN2313 RN2312 RN1313 RN1312 RN1312 abstract |
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