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RN1970(TE85L,F) Toshiba America Electronic Components PRE-BIASED DIGITAL TRANSISTOR,50V V(BR)CEO,100MA I(C),TSOP visit Digikey Buy

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Part : RN1970FS(TPL3) Supplier : Toshiba Manufacturer : America II Electronics Stock : 10,000 Best Price : - Price Each : -
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RN1970 Datasheet

Part Manufacturer Description PDF Type
RN1970 Toshiba Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Original
RN1970 Toshiba NPN Transistor Original
RN1970CT Toshiba RN1970 - TRANSISTOR 50 mA, 20 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-1K1A, CST6, 6 PIN, BIP General Purpose Small Signal Original
RN1970FE Toshiba RN1970 - TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-2N1A, EXTREME SUPERMINI, ES6, 6 PIN, BIP General Purpose Small Signal Original
RN1970FE Toshiba Transistors Original
RN1970FE Toshiba Japanese - Transistors Original
RN1970FE Toshiba Original
RN1970FE(TE85L,F) Toshiba Transistors (BJT) - Arrays, Pre-Biased, Discrete Semiconductor Products, TRAN DUAL NPN ES6 50V 100A Original
RN1970FS Toshiba Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) Original
RN1970HFE Toshiba Dual Silicon NPN Epitaxial Transistor with Resistor Original
RN1970(TE85L) Toshiba RN1970 - TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, US6, 2-2J1B, 6 PIN, BIP General Purpose Small Signal Original
RN1970TE85L Toshiba RN1970 - TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal Original
RN1970(TE85L,F) Toshiba Transistors (BJT) - Arrays, Pre-Biased, Discrete Semiconductor Products, TRAN DUAL NPN US6 50V 100A Original
RN1970TE85N Toshiba RN1970 - TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal Original
RN1970(TE85R) Toshiba RN1970 - TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, US6, 2-2J1B, 6 PIN, BIP General Purpose Small Signal Original
RN1970TE85R Toshiba RN1970 - TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal Original

RN1970

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: RN1970,RN1971 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1970, RN1971 , Equivalent Circuit (Top View) Start of commercial production 1992-01 1 2014-03-01 RN1970 , 120 â'• 700 â'• Collector output capacitance RN1970 RN1971 VCE (sat) â'• IC = , "¦ 2014-03-01 RN1970,RN1971 (Q1, Q2 Common) 3 2014-03-01 RN1970,RN1971 (Q1, Q2 Common) 4 2014-03-01 RN1970,RN1971 Type Name Marking RN1970 RN1971 5 2014-03-01 RN1970,RN1971 Toshiba
Original
RN2970 RN2971

RN1970

Abstract: RN1971 RN1970,RN1971 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1970,RN1971 Unit , View) 1 2005-02-22 RN1970,RN1971 Electrical Characteristics (Ta = 25°C) (Q1, Q2 Common , 5V, IC = 1mA 120 700 Collector output capacitance RN1970 RN1971 VCE (sat , RN1970,RN1971 (Q1, Q2 Common) 3 2005-02-22 RN1970,RN1971 (Q1, Q2 Common) 4 2005-02-22 RN1970,RN1971 Type Name Marking RN1970 RN1971 5 2005-02-22 RN1970,RN1971
Toshiba
Original
Abstract: TOSHIBA TOSHIBA TRANSISTOR RN1970,RN1971 SILICON NPN EPITAXIAL TYPE (PCT PROCESS) RN1Q7Î1 , utput Capacitance In p u t Resistor RN1970 RN1971 SYM BO L 'L D U Ie b o hV K V C E (s a t) fT c ob R1 T , TOSHIBA RN1970,RN1971 (Ql, Q2 COMMON) RN1970 Ic - Vi(ON) RN1970 IC - Vi(OFF) RN1971 IC - Vi , contained herein is subject to change w itho ut notice. 1997 05-13 - 2/4 TOSHIBA RN1970,RN1971 (Ql, Q2 COMMON) RN1970 2000 COMMON EMITTER 1000 jf 2 SOO 300 hpE - IC RN1970 VCE(sat) - IC -
OCR Scan
RM1Q71 N1971 961001EAA2
Abstract: RN1970,RN1971 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1970,RN1971 Unit , Equivalent Circuit (Top View) 1 2001-06-07 RN1970,RN1971 Electrical Characteristics (Ta = 25 , resistor RN1970 RN1971 Typ. Max Unit VCB = 5V, IE = 0 â'• â'• 100 nA â , â'•#20; 3.29 4.7 6.11 7#20; 10 13 â'•#20; 2 kâ"¦ 2001-06-07 RN1970,RN1971 (Q1, Q2 Common) 3 2001-06-07 RN1970,RN1971 (Q1, Q2 Common) 4 2001-06-07 RN1970 Toshiba
Original
Abstract: RN1970, RN1971 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1970, RN1971 Unit , Equivalent Circuit (Top View) 1 2004-11-29 RN1970, RN1971 Electrical Characteristics (Ta = 25 , '• Collector output capacitance RN1970 RN1971 VCE (sat) â'• IC = 5 mA, IB = 0.25 mA â'• 0.1 , pF R1 â'• 3.29 4.7 6.11 7 10 13 â'• 2 kâ"¦ 2004-11-29 RN1970, RN1971 (Q1, Q2 Common) 3 2004-11-29 RN1970, RN1971 (Q1, Q2 Common) 4 2004-11-29 Toshiba
Original

RN1970

Abstract: RN1971 RN1970,RN1971 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1970,RN1971 Unit , View) 1 2001-06-07 RN1970,RN1971 Electrical Characteristics (Ta = 25°C) (Q1, Q2 Common) ° , current gain Characteristic Collector output capacitance Input resistor RN1970 RN1971 Typ , RN1970,RN1971 (Q1, Q2 Common) 3 2001-06-07 RN1970,RN1971 (Q1, Q2 Common) 4 2001-06-07 RN1970,RN1971 Type Name Marking RN1970 RN1971 5 2001-06-07 RN1970,RN1971
Toshiba
Original

RN1970

Abstract: RN1971 RN1970,RN1971 NPN (PCT) () RN1970,RN1971 : mm (6 ) 2 , , RN2970RN2971 JEDEC JEITA 2­2J1B : 6.8 mg () (top view) 1 2007-11-01 RN1970 , ) fT RN1970 Cob R1 RN1971 2 K 2007-11-01 RN1970,RN1971 (Q1, Q2 ) 3 2007-11-01 RN1970,RN1971 (Q1, Q2 ) 4 2007-11-01 RN1970,RN1971 RN1970 RN1971 5 2007-11-01 RN1970,RN1971 · · ·
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Original

RN1970

Abstract: RN1971 RN1970,RN1971 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1970,RN1971 , . 2000-09-14 1/5 RN1970,RN1971 Electrical Characteristics (Ta = 25°C) (Q1, Q2 Common) ° Symbol , gain Characteristic Collector output capacitance Input resistor RN1970 RN1971 Typ. Max , pF R1 3.29 4.7 6.11 7 10 13 2000-09-14 k 2/5 RN1970,RN1971 , 3/5 RN1970,RN1971 (Q1, Q2 Common) 2000-09-14 4/5 RN1970,RN1971 Type Name
Toshiba
Original
Abstract: RN1970,RN1971 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1970,RN1971 , (Top View) 1 2007-11-01 RN1970,RN1971 Electrical Characteristics (Ta = 25°C) (Q1, Q2 Common , voltage Translation frequency Collector output capacitance Input resistor RN1970 RN1971 Symbol ICBO IEBO , RN1970,RN1971 (Q1, Q2 Common) 3 2007-11-01 RN1970,RN1971 (Q1, Q2 Common) 4 2007-11-01 RN1970,RN1971 Type Name Marking RN1970 RN1971 5 2007-11-01 RN1970,RN1971 RESTRICTIONS Toshiba
Original
Abstract: TO SHIBA RN1970,RN1971 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) RN1970 , Capacitance V ob = 10V, IE = 0, f=lM Hz 3 6 pF Cob RN1970 3.29 4.7 6.11 kn Input Resistor R1 RN1971 , , Q2 COMMON) RN1970 RN1970,RN1971 RN1970 Ic - Vi(ON) Iq - Vi(OFF) 3000 1000 H 2 H , VcE(sat) 3/4 RN1970,RN1971 Iq (mA) VQE (sat) - IC COLLECTOR CURRENT RN1971 - 1997 05-13 TO SHIBA TYPE NAME RN1970 RN1970,RN1971 MARKING Fl F l Á XXK Id bl Id -
OCR Scan

RN1970

Abstract: RN1971 RN1970,RN1971 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1970,RN1971 , (Top View) 1 2007-11-01 RN1970,RN1971 Electrical Characteristics (Ta = 25°C) (Q1, Q2 Common , 5V, IC = 1mA 120 700 Collector output capacitance RN1970 RN1971 VCE (sat , RN1970,RN1971 (Q1, Q2 Common) 3 2007-11-01 RN1970,RN1971 (Q1, Q2 Common) 4 2007-11-01 RN1970,RN1971 Type Name Marking RN1970 RN1971 5 2007-11-01 RN1970,RN1971
Toshiba
Original

TRANSISTOR MARKING TE US6

Abstract: CURRENT RN1970.RN1971 1997 - 05-13 3/4 I q (mA) TOSHIBA RN1970,RN1971 TYPE NAME RN1970 , TOSHIBA TO SHIBA TRANSISTOR RN1970,RN1971 SILICON NPN EPITAXIAL TYPE (PCT PROCESS) RN1970 , Capacitance 3 6 pF V cb = 10V, IE = 0, f = 1MHz Cob RN1970 3.29 4.7 6.11 kn Input Resistor R1 - RN1971 7 10 , d u cto r R e lia b ility H a n d b o o k . 1997 05-13 1/4 - TOSHIBA RN1970,RN1971 (Qi, Q2 COMMON) RN1970 Iß - Vi(ON) < 1000 3000 RN1970 Ic - Vi(OFF) 500 300 Tf) = io o °r
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OCR Scan
TRANSISTOR MARKING TE US6

MARKING EC EQ

Abstract: 1971 ic RN1970,1971 (RN1970) SW ITCH IN G , INVERTER CIRCUIT, INTERFACE CIRCUIT A N D DRIVER CIRCUIT , Capacitance Cob RN1970 R1 In p u t Resistor RN1971 - - 120 - - - 3.29 7 0.1 250 3 4.7 10 V MHz 6 pF kn 6.11 13 270 RN1970,1971 (RN1970) (Q l, Q2 COMMON) RN1970 (mA) I c - Vi (ON) RN1970 I c - V l(O FF) $ o COLLECTOR CURRENT Iq 0 0.2 0.4 0.6 , ) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) COLLECTOR CURRENT Jc RN1970,1971 (m A) RN1970,1971
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OCR Scan
MARKING EC EQ 1971 ic LTRA MARKING
Abstract: fT 6 pF - 3 V c b = 10V, I e = 0, f=lM H z Collector Output Capacitance C0b RN1970 3.29 4.7 6.11 kn Input Resistor R1 - 13 7 10 RN1971 831 RN1970, RN1971 COLLECTOR CURRENT Ic (mA) COLLECTOR , ) RN1970, RN1971 (Ql, Q2 COMMON) RN1970 hpE - IC RN1970 VCE(sat) - IC D C CURRENT GAIN hpg , ; 0.1 0.3 1 3 10 30 COLLECTOR CURRENT lc (mA) 100 833 RN1970, RN1971 TYPE NAME RN1970 -
OCR Scan
Abstract: RN1970,RN1971 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1970,RN1971 , Equivalent Circuit (Top View) 1 2007-11-01 RN1970,RN1971 Electrical Characteristics (Ta = 25Â , 0.3 V MHz 3 6 3.29 4.7 6.11 7 RN1970 Input resistor 120 10 pF 13 kâ"¦ R1 RN1971 2 2007-11-01 RN1970,RN1971 (Q1, Q2 Common) 3 2007-11-01 RN1970,RN1971 (Q1, Q2 Common) 4 2007-11-01 RN1970,RN1971 Type Name Marking RN1970 RN1971 Toshiba
Original
Abstract: RN1970,RN1971 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1970,RN1971 Unit: mm Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications l Including , Equivalent Circuit (Top View) 1 2001-06-07 RN1970,RN1971 Electrical Characteristics (Ta = 25 , resistor RN1970 RN1971 Typ. Max Unit VCB = 5V, IE = 0 â'• â'• 100 nA â , â'•#20; 3.29 4.7 6.11 7#20; 10 13 â'•#20; 2 kâ"¦ 2001-06-07 RN1970,RN1971 Toshiba
Original

RN1970

Abstract: RN1971 RN2970,RN2971 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2970,RN2971 Unit: mm Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Including two devices in US6 (ultra super mini type with 6 leads) With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN1970~RN1971 Equivalent Circuit Maximum Ratings (Ta = 25°C) (Q1, Q2 Common) ° Characterisstic Symbol Rating Unit
Toshiba
Original

diode 2sa1015

Abstract: rn4601 RN2967 RN1968 RN2968 RN1969 RN2969 RN1970 RN2970 RN1971 RN2971 - Point symme Point symme try array
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OCR Scan
RN2226 diode 2sa1015 rn4601 2sa1015 sot-23 2SC1815 2SA1015 VRN2501/ RN1502 RN2502

2J1B

Abstract: RN1970 RN2970,RN2971 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2970,RN2971 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit in mm Including two devices in US6 (ultra super mini type with 6 leads) With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN1970~RN1971 Equivalent Circuit Maximum Ratings (Ta = 25°C) (Q1, Q2 Common) ° Characterisstic Symbol Rating
Toshiba
Original
2J1B
Abstract: RN2970, RN2971 SW ITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT A N D DRIVER CIRCUIT APPLICATIONS. SILICON PNP EPITAXIAL TYPE U nit in mm 2 . 110 .1 Including Two Devices in US6 (Ultra Super Mini Type with 6 leads) W ith Built-in Bias Resistors Simplify Circuit Design Reduce a Quantity of Parts and M anufacturing Process Complementary to RN1970~RN1971 EQ UIVALENT CIRCUIT ie - J-Ul JEDEC - EIAJ - 2-2J1B TOSHIBA W eight : 6.8mg 1. EMITTER 1 2. EMITTER 2 3. BASE 2 4. COLLECTOR 2 5. BASE 1 6 -
OCR Scan
Abstract: T O SH IB A RN2970,RN2971 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) RN2970, RN2971 Unit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AN D DRIVER CIRCUIT APPLICATIONS. â'¢ â'¢ â'¢ â'¢ â'¢ Including Two Devices in US6 (Ultra Super Mini Type with 6 leads) With Built-in Bias Resistors Simplify Circuit Design Reduce a Quantity of Parts and Manufacturing Process Complementary to RN1970~RN1971 EQUIVALENT CIRCUIT M A X IM U M RATINGS (Ta = 25°C)(Q1, Q2 -
OCR Scan
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