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RN1414,LF Toshiba America Electronic Components TRANS PREBIAS NPN 0.2W S-MINI visit Digikey Buy

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RN1414 Datasheet

Part Manufacturer Description PDF Type
RN1414 Toshiba Silicon NPN Transistor with integrated resistor Original
RN1414 Toshiba NPN Transistor Original
RN1414(TE85L,F) Toshiba Transistors (BJT) - Single, Pre-Biased, Discrete Semiconductor Products, TRAN NPN S-MINI 50V 100A Original

RN1414

Catalog Datasheet MFG & Type PDF Document Tags

sc 1418

Abstract: RN1415 RN1414RN1418 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1414,RN1415,RN1416 , RN1414RN1418 2000-09-14 6/7 RN1414RN1418 Type Name Marking RN1414 RN1415 RN1416 , . R1 (k) R2 (k) RN1414 1 10 RN1415 2.2 10 RN1416 4.7 10 RN1417 10 , Characteristic Collector-base voltage Collector-emitter voltage Weight: 0.012g Symbol RN1414~1418 Rating Unit VCBO 50 V VCEO 50 V RN1414 5 RN1415 Emitter-base voltage 6
Toshiba
Original
RN1418 RN2414 RN2418 sc 1418 SC-236MOD SC-59 961001EAA2

RN1414

Abstract: RN1415 RN1414RN1418 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1414,RN1415,RN1416 , Name Marking RN1414 RN1415 RN1416 RN1417 RN1418 7 2001-06-07 RN1414RN1418 , . R1 (k) R2 (k) RN1414 1 10 RN1415 2.2 10 RN1416 4.7 10 RN1417 10 , Symbol RN1414~1418 Rating Unit VCBO 50 V VCEO 50 V RN1414 RN1415 , Collector power dissipation Junction temperature Storage temperature range V IC RN1414~1418 100
Toshiba
Original

RN1414

Abstract: RN1415 RN1414RN1418 NPN (PCT) () RN1414, RN1415, RN1416, RN1417, RN1418 : mm , () (Ta = 25°C) RN14141418 VCBO 50 V VCEO 50 V RN1414 5 , RN1414RN1418 (Ta = 25°C) RN14141418 ICBO VCB = 50V, IE = 0 100 , RN1418 4.7 RN1414 RN1415 RN1416 RN141416,18 , 2 mA V V V k 2007-11-01 RN1414RN1418 100 RN1415 IC - VI(ON) RN1414
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Original
RN24142418 236MOD

ROBOTICS

Abstract: RN1414 RN1414~RN1418 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1414,RN1415,RN1416 , . R1 (k) R2 (k) RN1414 1 10 RN1415 2.2 10 RN1416 4.7 10 RN1417 10 , Symbol RN1414~1418 Rating Unit VCBO 50 V VCEO 50 V RN1414 RN1415 , Collector power dissipation Junction temperature Storage temperature range V IC RN1414~1418 100 mA PC 200 mW Tj 150 °C Tstg -55~150 °C 1 2001-06-07 RN1414
Toshiba
Original
ROBOTICS
Abstract: RN1414~RN1418 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1414,RN1415,RN1416 , . R1 (kâ"¦) R2 (kâ"¦) RN1414 1 10 RN1415 2.2 10 RN1416 4.7 10 RN1417 , Symbol RN1414~1418 Rating Unit VCBO 50 V VCEO 50 V RN1414 RN1415 , Collector power dissipation Junction temperature Storage temperature range V IC RN1414~1418 100 mA PC 200 mW Tj 150 °C Tstg â'55~150 °C 1 2001-06-07 RN1414 Toshiba
Original

RN1414

Abstract: RN1415 RN1414RN1418 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1414, RN1415 , RN1414RN1418 IC - VI (ON) RN1414 100 COMMON EMITTER VCE = 0.2V COLLECTOR CURRENT IC (mA , (OFF) (V) 4 2009-11-16 RN1414RN1418 1000 hFE - IC RN1414 RN1415 1000 COMMON , 100 COLLECTOR CURRENTIC (mA) 5 2009-11-16 RN1414RN1418 RN1414 VCE(sat) - IC COMMON , Marking RN1414 RN1415 RN1416 RN1417 RN1418 7 2009-11-16 RN1414RN1418
Toshiba
Original

LB 1416

Abstract: RN1414 RN1415 In p u t V oltage (OFF) RN1416 RN1417 RN1418 T ransition Frequency RN1414-1418 Collector O , RN1414,1415,1416 RN1417,1418 (RN 1Î14) SW ITCHIN G , INVERTER CIRCUIT, INTERFACE CIRCUIT A N D , COLLECTOR TYPE No. RN1414 RN1415 RN1416 RN1417 RN1418 R l (kO) 1 2.2 4.7 10 47 TO-236MOD SC , itter Voltage RN1414 RN1415 E m itter-B ase Voltage RN1416 RN1417 RN1418 Collector C u rren t Collector , Tj Tstg mA mW °C °C 178 RN1414,1415,1416 RN1417,1418
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OCR Scan
LB 1416
Abstract: RN1414RN1418 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1414, RN1415, RN1416 , pF V V V mA Unit nA nA 2 2007-11-01 RN1414RN1418 RN1414 IC - VI (ON) 100 COLLECTOR , 0.1 0.1 1 10 100 INPUT VOLTAGE VI (ON) (V) 3 2007-11-01 RN1414RN1418 RN1414 IC - VI (OFF , RN1414RN1418 RN1414 hFE - IC 1000 1000 RN1415 hFE - IC COMMON EMITTER VCE = 5V DC CURRENT GAIN , COLLECTOR CURRENTIC (mA) 100 5 2007-11-01 RN1414RN1418 RN1414 VCE(sat) - IC 1 COLLECTOR-EMITTER Toshiba
Original
Abstract: Collector Power Dissipation Junction Temperature Storage Temperature Range RN1414-1418 RN1414 RN1415 RN1416 RN1417 RN1418 RN1414-1418 RATING UNIT VCBO VCEO 50 50 5 6 7 15 25 100 200 , (Ta = 25°C) CHARACTERISTIC RN1414-1418 Collector Cut-off Current RN1414-1418 RN1414 RN1415 Emitter Cut-off RN1416 Current RN1417 RN1418 RN1414-16, 18 DC Current Gain RN1417 Collector-Emitter Saturation Voltage RN1414-1418 RN1414 RN1415 Input Voltage (ON) RN1416 RN1417 RN1418 -
OCR Scan
1414-RN1418 RN1414-RN1418
Abstract: RN1414â¼RN1418 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1414, RN1415 , RN1417 2.13 RN1418 4.7 2 2009-11-16 RN1414â¼RN1418 IC - VI (ON) RN1414 100 , RN1414â¼RN1418 hFE - IC RN1414 RN1415 1000 DC CURRENT GAIN DC CURRENT GAIN hFE COMMON , COLLECTOR CURRENT IC (mA) 5 2009-11-16 RN1414â¼RN1418 RN1414 VCE(sat) - IC RN1415 COMMON , RN1414 RN1415 RN1416 RN1417 RN1418 7 2009-11-16 RN1414â¼RN1418 RESTRICTIONS ON Toshiba
Original
Abstract: RN1414RN1418 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1414, RN1415, RN1416 , RN1414RN1418 RN1414 IC - VI (OFF) 10000 COLLECTOR CURRENT IC (uA) 10000 COLLECTOR CURRENT IC (uA , VI (OFF) (V) 4 2006-03-14 RN1414RN1418 RN1414 hFE - IC 1000 1000 RN1415 hFE - IC , RN1414RN1418 RN1414 VCE(sat) - IC 1 COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) ( V) 1 , CURRENTIC (mA) 100 6 2006-03-14 RN1414RN1418 Type Name Marking RN1414 RN1415 RN1416 Toshiba
Original
Abstract: RN1414â¼RN1418 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1414, RN1415 , 2014-03-01 RN1414â¼RN1418 1000 hFE - IC RN1414 RN1415 1000 COMMON EMITTER VCE = 5V DC , 10 1 10 100 COLLECTOR CURRENTã''IC (mA) 5 2014-03-01 RN1414â¼RN1418 RN1414 , RN1414â¼RN1418 Type Name Marking RN1414 RN1415 RN1416 RN1417 RN1418 7 2014-03-01 , commercial production 1994-08 1 2014-03-01 RN1414â¼RN1418 Electrical Characteristics (Ta = 25Â Toshiba
Original
Abstract: TOSHIBA TOSHIBA TRANSISTOR RN1414-RN1418 SILICON NPN EPITAXIAL TYPE (PCT PROCESS) RN1414 , = 5mA, VCE (sat) Iß = 0.25mA 1997 05-13 2/7 - TOSHIBA RN1414-RN1418 RN1414 le - , TOSHIBA RN1414-RN1418 RN1414 l e - Vi (OFF) 5000 3000 RN1415 I c - Vi (OFF) f i j , 05-13 4/7 - TOSHIBA RN1414-RN1418 RN1414 hFE - IC RN1415 hFE - IC COLLECTOR , change without notice. 1997 05-13 1/7 - TOSHIBA RN1414-RN1418 ELECTRICAL CHARACTERISTICS -
OCR Scan
2414-R
Abstract: RN2414~RN2418 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2414,RN2415,RN2416,RN2417,RN2418 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit: mm l With built-in bias resistors l Simplify circuit design l Reduce a quantity of parts and manufacturing process l Complementary to RN1414~RN1418 Equivalent Circuit and Bias Resistor Values Type No. R1 (kâ"¦) R2 (kâ"¦) RN2414 1 10 RN2415 2.2 10 RN2416 4.7 10 RN2417 Toshiba
Original

2418

Abstract: RN1414 RN2414~RN2418 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2414,RN2415,RN2416,RN2417,RN2418 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit in mm With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN1414~RN1418 Equivalent Circuit and Bias Resistor Values Type No. R1 (k) R2 (k) RN2414 1 10 RN2415 2.2 10 RN2416 4.7 10 RN2417 10
Toshiba
Original
2418

RN1414

Abstract: RN1418 RN2414~RN2418 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2414,RN2415,RN2416,RN2417,RN2418 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit: mm With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN1414~RN1418 Equivalent Circuit and Bias Resistor Values Type No. R1 (k) R2 (k) RN2414 1 10 RN2415 2.2 10 RN2416 4.7 10 RN2417 10
Toshiba
Original

RN1417

Abstract: rn4601 RN1412 RN1413 RN1414 RN1415 RN1416 RN1417 RN1418 RN1421 RN1422 RN1423 RN1424 RN1425 RN1426 RN1427 RN1441
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OCR Scan
rn4601 RN1001 RN1002 RN1003 RN1004 RN1005 RN1006
Abstract: R N 2 4 1 4 , 2 4 1 5 , 2 4 1 6 R N 2 4 1 7 , 2 4 1 8 (R N 2 4 1 4 ) SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. U nit in mm · · · · W ith Built-in Bias Resistors Simplify Circuit Design Reduce a Quantity of Parts and Manufacturing Process Complementary to RN1414~RN1418 EQUIVALENT CIRCUIT AND BIAS RESISTOR VALUES C Rl B O-vw- TYPE No. RN2414 RN2415 RN2416 RN2417 RN2418 R l (kfl) 1 2.2 4.7 10 47 R2 (kfl) 10 10 10 4.7 10 2. 3 -
OCR Scan
RN2414-2418 RN2414--
Abstract: RN2414~RN2418 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2414, RN2415, RN2416, RN2417, RN2418 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications With built-in bias resistors Simplified circuit design Reduce a quantity of parts and manufacturing process Complementary to RN1414~RN1418 Unit: mm Equivalent Circuit and Bias Resistor Values Type No. RN2414 RN2415 RN2416 RN2417 RN2418 R1 (k) 1 2.2 4.7 10 47 R2 (k) 10 10 10 4.7 10 Absolute Maximum Toshiba
Original

2418

Abstract: *n2418 RN2414~RN2418 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2414,RN2415,RN2416,RN2417,RN2418 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit: mm l With built-in bias resistors l Simplify circuit design l Reduce a quantity of parts and manufacturing process l Complementary to RN1414~RN1418 Equivalent Circuit and Bias Resistor Values Type No. R1 (k) R2 (k) RN2414 1 10 RN2415 2.2 10 RN2416 4.7 10 RN2417 10
Toshiba
Original
ic 2418 equivalent

capacitor FA .10F

Abstract: C01062 RN2414~RN2418 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2414,RN2415,RN2416,RN2417,RN2418 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit: mm With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN1414~RN1418 Equivalent Circuit and Bias Resistor Values Type No. R1 (k) R2 (k) RN2414 1 10 RN2415 2.2 10 RN2416 4.7 10 RN2417 10
Analog Devices
Original
AD8051 AD8052 AD8054 C01062 capacitor FA .10F RU-14 AD8051/AD8052 TSSOP-14 AD8051/AD8052/AD8054

OP492

Abstract: OP492GP RN1412 RN1413 RN1414 RN1415 RN1416 RN1417 RN1418 RN1421 RN1422 RN1423 RN1424 RN1425 RN1426 RN1427 RN1441
Analog Devices
Original
OP292 OP-292 OP492 OP492GP OP292GP OP492P OP292/OP492 OP292/ RN-14

MS-012-AB

Abstract: MS-012AB R N 2 4 1 4 , 2 4 1 5 , 2 4 1 6 R N 2 4 1 7 , 2 4 1 8 (R N 2 4 1 4 ) SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. U nit in mm · · · · W ith Built-in Bias Resistors Simplify Circuit Design Reduce a Quantity of Parts and Manufacturing Process Complementary to RN1414~RN1418 EQUIVALENT CIRCUIT AND BIAS RESISTOR VALUES C Rl B O-vw- TYPE No. RN2414 RN2415 RN2416 RN2417 RN2418 R l (kfl) 1 2.2 4.7 10 47 R2 (kfl) 10 10 10 4.7 10 2. 3
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Original
MS-012AB MS-012-AB
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