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Part : RFP18N10 Supplier : HARTING Manufacturer : Chip One Exchange Stock : 275 Best Price : - Price Each : -
Part : RFP18N10 Supplier : Harris Semiconductor Manufacturer : Chip One Exchange Stock : 275 Best Price : - Price Each : -
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RFP18N10 Datasheet

Part Manufacturer Description PDF Type
RFP18N10 Intersil 18A, 80V and 100V, 0.100 ?, N-Channel Power MOSFETs Original
RFP18N10 Toshiba Power MOSFETs Cross Reference Guide Original
RFP18N10 General Electric N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Drain current RMS continuous 18A. Scan
RFP18N10 Harris Semiconductor Power MOSFET Data Book 1990 Scan
RFP18N10 International Rectifier RF and BUZ Series Power MOSFETs - N-Channel Scan
RFP18N10 N/A Shortform Datasheet & Cross References Data Scan
RFP18N10 N/A Semiconductor Master Cross Reference Guide Scan
RFP18N10 N/A Shortform Data and Cross References (Misc Datasheets) Scan

RFP18N10

Catalog Datasheet MFG & Type PDF Document Tags

TA17421

Abstract: y *" TM * September 1998 RFM18N08, RFM18N10, RFP18N08, RFP18N10 18A, 80V and 100V, 0.100 Ohm , TA17421. BRAND RFM18N08 RFM18N10 RFP18N08 RFP18N10 Features · 18A, 80V and 100V · rDS(ON) = 0.100i2 · , Information PART NUM BER RFM18N08 RFM18N10 RFP18N08 RFP18N10 PACKAGE TO -204AA TO -204AA TO -220AB TO , , RFP18N10 Absolute Maximum Ratings T c = 25°c, Unless Otherwise Specified RFM 18N08 Drain to Source , 150 300 260 RFP18N10 100 100 18 45 ±20 75 0.6 -55 to 150 300 260 UNITS V V A A V W W /°C °C °C °C
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OCR Scan
TB334 AN7254 AN7260

RFM18N08

Abstract: RFM18N10 MOSFETs RFM18N08, RFM18N10, RFP18N08, RFP18N10 File Number 1446 N-Channel Enhancment-Mode Power , the RFP18N08 and RFP18N10* are n-channel enhancement-mode silicon-gate power field-effect transistors , RFM18N10 JEDEC TO-2Q4AA RFP18N08 RFP18N10 JEDEC TO-220AB MAXIMUM RATINGS, Absolute-Maximum Values (Tc=25°C): RFM18N08 RFM18N10 RFP18N08 RFP18N10 DRAIN-SOURCE VOLTAGE Vms 80 100 80 100 V DRAIN-GATE VOLTAGE (Rgs , MOSFETs RFM18N08, RFM18N10, RFP18N08, RFP18N10 ELECTRICAL CHARACTERISTICS At Case Temperature (Tc) = 25Â
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OCR Scan
TA9286 TA9287 RFM1BN08 92CM- 36ISOR1 99C9-3SII0

TA9286

Abstract: RFM18N08 Standard Power MOSFETs RFM18N08, RFM18N10, RFP18N08, RFP18N10 File Number 1446 N-Channel , RFM18N10 and the RFP18N08 and RFP18N10* are n-channel enhancement-mode silicon-gate power field-effect , . RFM18N08 RFM18N10 JEDEC TO-204AA RFP18N08 RFP18N10 JEDEC TO-22DAB MAXIMUM RATINGS, Absolute-Maximum Values (Tc=25°C): RFM18N08 RFM18N10 RFP18N08 RFP18N10 DRAIN-SOURCE VOLTAGE VDSS 80 100 80 100 V , Standard Power MOSFETs RFM18N08, RFM18N10, RFP18N08, RFP18N10 ELECTRICAL CHARACTERISTICS At Case
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OCR Scan
RCA 3432 92CS-34815 92CS- 36IBO 92CS-3614 AN-7254 AN-7260

Diode Mark N10

Abstract: RFP18N10 MOSFETs, TO204AA, TO220AB) /Creator () /DOCIN FO pdfmark RFM18N08, RFM18N10, RFP18N08, RFP18N10 , RFP18N10 TO-220AB Symbol RFP18N10 D G NOTE: When ordering, use the entire part number. S , Number 1446.1 RFM18N08, RFM18N10, RFP18N08, RFP18N10 Absolute Maximum Ratings TC = 25oC , 45 ±20 100 0.8 -55 to 150 RFP18N08 80 80 18 45 ±20 75 0.6 -55 to 150 RFP18N10 100 , PARAMETER MIN TYP RFM18N08, RFP18N08 80 - - V RFM18N10, RFP18N10 100 - -
Harris Semiconductor
Original
Diode Mark N10 RFM18 RFP18N 75BVDSS 50BVDSS 25BVDSS

18N10

Abstract: DRAIN (FLANGE) GATE D e s c rip tio n The RFM18N08 and RFM18N10 and the RFP18N08 and RFP18N10 are , 25° C unless otherwise specified LIMITS RFM18N10 RFM18N08 RFP18N10 RFP18N08 MIN. 80 MAX. MIN. 100 MAX , , RFP18N10 "Pulsed: Pulse duration = 300 ps max., duty cycle = 2%. SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS LIMITS RFM18N08 RFP18N08 RFM18N10 RFP18N10 MIN. MIN. MAX. MAX. - - 1.4 1.4 150(typ) 150(typ , %. 4-695 N-CHANNEL POW ER MOSFETs = 9A R FM 18N 08. RFM 18N 10, RFP18N08. RFP18N10 . CASE
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OCR Scan
18N10 08/18N FP18N T0-204A T0-220AB 92C5-348I5 92CS-36I4

buz11

Abstract: BUZ31 RFL1N10 RFH35N10 RFP2N10 BUZ72A RFP12N10/BUZ20 RFP18N10 BUZ21 120 1 2 4 10 15 30 1.90 1.75 0.40 0.30 0.15
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OCR Scan
RFM15N05 RFM25N05 RFK45N05 RFL2N05 RFH45N05 RFP4N05 buz11 BUZ31 RFK30N12 THOMSON DISTRIBUTOR 58e d RFL4N12 BUZ71 T0-204

IRF740 "direct replacement"

Abstract: irf9640 REPLACEMENT GUIDE RFP8N10 RFP10N12 RFP10N15 RFP10P12 RFP12N08 RCA RFP12N10 RFP12N20 RFP15N05 RFP15N06 RFP15N12 RFP18N10
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OCR Scan
IRF9613 IRFP333 VN0106N5 IRF740 "direct replacement" irf9640 REPLACEMENT GUIDE IRF9540 replacement IRF640 irf510 2Sk350 HITACHI rca9213a IRF510 IRF511 IRF512 IRF513 IRF520 IRF521

IRF732P

Abstract: IRF722P RFP8N18 RFP8N20 RFP10N12 RFP10N15 RFP12N08 RFP12N10 RFP15N05 RFP15N06 RFP18N08 RFP18N10 RFP25N05 RFP25N06
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OCR Scan
2SK295 SGSP321 SGSP367 IRF540FI SGSP381 SGSP369 IRF732P IRF722P SGSP3055 1rfp450 MTP20N10 irf522p 2SK296 2SK308 2SK310 2SK311 2SK312

TP8N10

Abstract: th15n20 RFP18N08 RFP18N10 RFP25N05 RFP25N06 SGSP201 SGSP202 SGSP221 SGSP222 SGSP230 SGSP231 SGSP232 SGSP238 SGSP239
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OCR Scan
TP3055A TP8N10 th15n20 TH7N50 TP4N10 TP10N05 IRFP350FI 2SK313 2SK319 2SK320 2SK324 2SK345 2SK346

4311 mosfet transistor

Abstract: D 4206 TRANSISTOR , RFM15N15, RFP15N12, RFP15N15 RFD16N05, RFD16N05SM RFM18N0S, RFM18N10, RFP18N08, RFP18N10 RFP22N10 RFP25N05
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OCR Scan
4311 mosfet transistor D 4206 TRANSISTOR transistor D 322 Power MOSFETs D 843 Transistor Transistor irf230 2N6755 2N6756 2N6757 2N6758 2N6759 2N6760

std2n52

Abstract: stp2na60 RFP17N06LE RFP18N10 RFP22N10 RFP23N06LE RFP25N05 RFP25N06 RFP25N06LE RFP2N18 RFP3055 RFP3055LE
STMicroelectronics
Original
STU16NB50I YTA630 STP19NB20 std2n52 stp2na60 buz102 equivalent SSH6N80 rfp60n06 BUZ91 equivalent 2SK1119 2SK1120 2SK1151 2SK1152 2SK1153 2SK1154

fqp60n06

Abstract: SSH6N80 RFP15N15 RFP17N06LE RFP18N10 RFP22N10 RFP23N06LE RFP25N05 RFP25N06 RFP25N06LE RFP2N18 RFP3055
STMicroelectronics
Original
fqp60n06 spb32N03l SMP60N03-10L SSP80N06A IRF540 application fsd9933a STP7NB40 STT3PF30L STD20NE03L STP60NE03L-12 STP60NE03L-10 STP40NF03L

SSH6N80

Abstract: IRF640 equivalent RFP15N06 RFP15N06L RFP15N08L RFP15N15 RFP17N06LE RFP18N10 RFP22N10 RFP23N06LE RFP25N05 RFP25N05L
STMicroelectronics
Original
YTAF630 IRF640 equivalent buz100 equivalent ste38NA50 irf540 equivalent buz10 equivalent BUK444 equivalent 2SK1155 2SK1156 2SK1157 2SK1158 2SK1159 2SK1160

fqp60n06

Abstract: spb32N03l RFP15N15 RFP17N06LE RFP18N10 RFP22N10 RFP23N06LE RFP25N05 RFP25N06 RFP25N06LE RFP2N18 RFP3055
STMicroelectronics
Original
FQP50N10 STP55NF06 AND ITS EQUIVALENT FSD6680 HGTG*N60A4D SFP70N03 irf630 irf640 STP80NE03L-06 STS4DPF30L STB70NF03L STB55NF03L STW18NB40 STS8NFS30L

SSH6N80

Abstract: rfp60n06 RFP14N06 RFP14N06L RFP15N05 RFP15N05L RFP15N06 RFP15N06L RFP15N08L RFP15N15 RFP17N06LE RFP18N10
STMicroelectronics
Original
2SK2717 IRF3205 IR BUK417-500AE BUZ91A STMicroelectronics BUZ22 BUZ10 BUZ11A BUZ71A BUZ80A IRF530 IRF540

IRF540 complementary

Abstract: IRFZ44N complementary RFD7N10LESM RFP12N10 RFP22N10 RFP18N10 RFG40N10 RFP40N10 RFP10N12 RFP15N15 ST Replacement ST
STMicroelectronics
Original
STP3N60FI IRF540 complementary IRFZ44N complementary TOSHIBA IRFZ44A datasheet IRF630 complementary equivalent 2sk2837 mosfet stp4nb60fp RFP6N50 RFD16N03LSM RFP50N05 RFP50N05L RFD14N05L RFD14N05LSM

SSP35n03

Abstract: bc417 RFP15N06 RFP15N06L RFP15N08L RFP15N15 RFP17N06LE RFP18N10 RFP22N10 RFP23N06LE RFP25N05 RFP25N05L
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Original
SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent 5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA
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