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Part Manufacturer Description Datasheet BUY
TPD4E004DSFR Texas Instruments UNIDIRECTIONAL, SILICON, TVS DIODE visit Texas Instruments
TPD3E001DRY Texas Instruments UNIDIRECTIONAL, SILICON, TVS DIODE visit Texas Instruments
TPD2E001YFPR Texas Instruments DIODE UNIDIRECTIONAL, SILICON, TVS DIODE, LEAD FREE, DSBGA-4, Transient Suppressor visit Texas Instruments

RFN20 DIODE

Catalog Datasheet MFG & Type PDF Document Tags

t2d diode

Abstract: T2D 80 diode Data Sheet Super Fast Recovery Diode RFN20T2D Applications General rectification Dimensions , Silicon epitaxial planer RFN20 T2D 8.0±0.2 12.0±0.2 14.0±0.5 13.5MIN 15.0±0.4 0.2 8.0 , A C C Tc=100°C 1/2Io at per diode 60Hz half sin wave, Non-repetitive one cycle peak value, Tj , Thermal Resistance * per diode IR trr Rth(j-c) Conditions IF=10A VR=200V IF=0.5A,IR=1A,Irr=0.25×I R , :IR(nA) Tj=125°C 10000 Tj=150°C 1000 Tj=75°C 100 Tj=25°C 10 Tj=75°C 0.01 per diode
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t2d diode T2D 80 diode T2D 40 DIODE T2D 80_ diode RFN20 DIODE T2D DIODE 60 R1120A

T2D 40 DIODE

Abstract: Data Sheet AEC-Q101 Qualified Super Fast Recovery Diode RFN20T2DFH Applications General , 12.0±0.2 14.0±0.5 1.2 1.3 0.8 13.5MIN 5.0±0.2 RFN20 T2D â'  Construction Silicon , ) Conditions Limits 200 200 Tc=100°C 1/2Io at per diode 60Hz half sin wave, Non-repetitive one , Rth(j-c) junction to case ï¼ ï¼ 2.0 °C/W Thermal Resistance * per diode , =25°C 10 per diode per diode 0.001 0 500 1000 1 1500 FORWARD VOLTAGE:VF(mV) VF-IF
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T2D diode

Abstract: T2D 80 diode RFN20T2D Data Sheet Super Fast Recovery Diode RFN20T2D Applications General rectification , Construction Silicon epitaxial planer RFN20 T2D 8.0±0.2 12.0±0.2 14.0±0.5 13.5MIN 15.0±0.4 0.2 , 150 Unit V V A A C C Tc=100°C 1/2Io at per diode 60Hz half sin wave, Non-repetitive one cycle , current Reverse recovery time Thermal Resistance * per diode IR trr Rth(j-c) Conditions IF=10A VR , diode 0.001 0 500 1000 1500 FORWARD VOLTAGEVF(mV) VF-IF CHARACTERISTICS per diode 1 0 50 100 150 200
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T2D 09 diode diode t2d 05 T2D 55 diode T2D 1 DIODE diode T2D diode t2d 80

RFN20

Abstract: RFN20 DIODE Data Sheet Super Fast Recovery Diode RFN20NS3S zSerise Standard Fast Recovery zDimensions(Unit : mm) zLand Size Figure(Unit : mm) zApplications General rectification RFN20 NS3S zFeatures 1)Low switching loss 2)High current overload capacity LPDS zStructure ROHM : LPDS JEITA : TO263S Manufacture Date zConstruction Silicon epitaxial planer type zTaping Dimensions(Unit : mm) zAbsolute Maximum Ratings(Tc=25°C) Parameter Repetitive peak reverse voltage Reverse voltage Average
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rfn20n d0835

RFN20NS3S

Abstract: RFN20 RFN20NS3S Data Sheet Super Fast Recovery Diode RFN20NS3S zSerise Standard Fast Recovery zDimensions(Unit : mm) zLand Size Figure(Unit : mm) zApplications General rectification RFN20 NS3S zFeatures 1)Low switching loss 2)High current overload capacity LPDS zStructure ROHM : LPDS JEITA : TO263S Manufacture Date zConstruction Silicon epitaxial planer type zTaping Dimensions(Unit : mm) zAbsolute Maximum Ratings(Tc=25°C) Parameter Repetitive peak reverse voltage Reverse voltage Average
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RFN20NS3 RFN-20 RFN20-NS3S TO-263s
Abstract: Data Sheet Super Fast Recovery Diode RFN20NS4S zSerise Standard Fast Recovery zDimensions(Unit : mm) zApplications General rectification zLand Size Figure(Unit : mm) RFN20 NS4S zFeatures 1)Low switching loss 2)High current overload capacity LPDS zStructure ROHM : LPDS JEITA : TO263S Manufacture Date zConstruction Silicon epitaxial planer type zTaping Dimensions(Unit : mm) zAbsolute Maximum Ratings(Tc=25°C) Parameter Symbol Conditions Limits Unit ROHM
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Abstract: Data Sheet Super Fast Recovery Diode RFN20NS6S zSerise Standard Fast Recovery zDimensions(Unit : mm) zApplications General rectification zLand Size Figure(Unit : mm) RFN20 NS6S zFeatures 1)Low switching loss 2)High current overload capacity LPDS zStructure ROHM : LPDS JEITA : TO263S Manufacture Date zConstruction Silicon epitaxial planer type zTaping Dimensions(Unit : mm) zAbsolute Maximum Ratings(Tc=25°C) Parameter Symbol Conditions Limits Unit ROHM
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RFN20NS4S

Abstract: RFN20NS4S Data Sheet Super Fast Recovery Diode RFN20NS4S zSerise Standard Fast Recovery zDimensions(Unit : mm) zLand Size Figure(Unit : mm) zApplications General rectification RFN20 NS4S zFeatures 1)Low switching loss 2)High current overload capacity LPDS zStructure zConstruction Silicon epitaxial planer type ROHM : LPDS JEITA : TO263S Manufacture Date zTaping Dimensions(Unit : mm) zAbsolute Maximum Ratings(Tc=25°C) Parameter Repetitive peak reverse voltage Reverse voltage
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rfn20

Abstract: RFN20 DIODE Data Sheet Super Fast Recovery Diode RFN20NS6S zSerise Standard Fast Recovery zDimensions(Unit : mm) zLand Size Figure(Unit : mm) zApplications General rectification RFN20 NS6S zFeatures 1)Low switching loss 2)High current overload capacity LPDS zStructure zConstruction Silicon epitaxial planer type ROHM : LPDS JEITA : TO263S Manufacture Date zTaping Dimensions(Unit : mm) zAbsolute Maximum Ratings(Tc=25°C) Parameter Repetitive peak reverse voltage Reverse voltage Average
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RFN20NS3

Abstract: Data Sheet AEC-Q101 Qualified Super Fast Recovery Diode RFN20NS3SFH zSerise Standard Fast Recovery zLand Size Figure(Unit : mm) zDimensions(Unit : mm) RFN20 NS3S zApplications General rectification zFeatures 1)Low switching loss 2)High current overload capacity LPDS zStructure ROHM : LPDS JEITA : TO263S Manufacture Date zConstruction Silicon epitaxial planer type zTaping Dimensions(Unit : mm) zAbsolute Maximum Ratings(Tc=25°C) Parameter Symbol Conditions Limits
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Abstract: Data Sheet Super Fast Recovery Diode RFN20NS4S zSerise Standard Fast Recovery zDimensions(Unit : mm) zLand Size Figure(Unit : mm) zApplications General rectification RFN20 NS4S zFeatures 1)Low switching loss 2)High current overload capacity LPDS zStructure zConstruction Silicon epitaxial planer type ROHM : LPDS JEITA : TO263S Manufacture Date zTaping Dimensions(Unit : mm) zAbsolute Maximum Ratings(Tc=25°C) Parameter Repetitive peak reverse voltage Reverse voltage Average ROHM
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rfn20tf6s

Abstract: RFN20TF6S Data Sheet Super Fast Recovery Diode RFN20TF6S zSerise Standard Fast Recovery zDimensions(Unit : mm) zStructure zApplications General rectification zFeatures 1)Low switching loss 2)High current overload capacity RFN20 TF6S zConstruction Silicon epitaxial planer type ROHM : TO220NFM Manufacture Year Manufacture Week zAbsolute Maximum Ratings(Tc=25°C) Parameter Repetitive peak reverse voltage Reverse voltage Average
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Abstract: Data Sheet AEC-Q101 Qualified Super Fast Recovery Diode RFN20TF6SFH zSerise Standard Fast Recovery zDimensions(Unit : mm) zStructure zApplications General rectification RFN20 TF6S zFeatures 1)Low switching loss 2)High current overload capacity zConstruction Silicon epitaxial planer type ROHM : TO220NFM Manufacture Year Manufacture Week zAbsolute Maximum Ratings(Tc=25°C) Symbol Conditions Limits Unit Repetitive peak reverse voltage Parameter VRM Duty 0.5 ROHM
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RFN20NS6S

Abstract: RFN20 RFN20NS6S Data Sheet Super Fast Recovery Diode RFN20NS6S zSerise Standard Fast Recovery zDimensions(Unit : mm) zLand Size Figure(Unit : mm) zApplications General rectification RFN20 NS6S zFeatures 1)Low switching loss 2)High current overload capacity LPDS zStructure zConstruction Silicon epitaxial planer type ROHM : LPDS JEITA : TO263S Manufacture Date zTaping Dimensions(Unit : mm) zAbsolute Maximum Ratings(Tc=25°C) Parameter Repetitive peak reverse voltage Reverse voltage
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Abstract: Data Sheet Super Fast Recovery Diode RFN20TF6S zSerise Standard Fast Recovery zDimensions(Unit : mm) zStructure zApplications General rectification RFN20 TF6S zFeatures 1)Low switching loss 2)High current overload capacity zConstruction Silicon epitaxial planer type ROHM : TO220NFM Manufacture Year Manufacture Week zAbsolute Maximum Ratings(Tc=25°C) Symbol Conditions Limits Repetitive peak reverse voltage Parameter VRM Duty 0.5 600 V Reverse voltage ROHM
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Abstract: Data Sheet AEC-Q101 Qualified Super Fast Recovery Diode RFN20NS4SFH zSerise Standard Fast Recovery zLand Size Figure(Unit : mm) zDimensions(Unit : mm) zApplications General rectification RFN20 NS4S zFeatures 1)Low switching loss 2)High current overload capacity LPDS zStructure ROHM : LPDS JEITA : TO263S Manufacture Date zConstruction Silicon epitaxial planer type zTaping Dimensions(Unit : mm) zAbsolute Maximum Ratings(Tc=25°C) Parameter Symbol Conditions ROHM
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Abstract: Data Sheet Super Fast Recovery Diode RFN20NS3S zSerise Standard Fast Recovery zDimensions(Unit : mm) zLand Size Figure(Unit : mm) RFN20 NS3S zApplications General rectification zFeatures 1)Low switching loss 2)High current overload capacity LPDS zStructure ROHM : LPDS JEITA : TO263S Manufacture Date zConstruction Silicon epitaxial planer type zTaping Dimensions(Unit : mm) zAbsolute Maximum Ratings(Tc=25°C) Parameter Symbol Conditions Limits Unit Repetitive peak ROHM
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Abstract: Data Sheet Super Fast Recovery Diode RFN20TF6S zSerise Standard Fast Recovery zDimensions(Unit : mm) zStructure zApplications General rectification RFN20 TF6S zFeatures 1)Low switching loss 2)High current overload capacity zConstruction Silicon epitaxial planer type ROHM : TO220NFM Manufacture Year Manufacture Week zAbsolute Maximum Ratings(Tc=25°C) Symbol Conditions Limits Unit Repetitive peak reverse voltage Parameter VRM Duty 0.5 600 V Reverse ROHM
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Abstract: Data Sheet AEC-Q101 Qualified Super Fast Recovery Diode RFN20NS6SFH zSerise Standard Fast Recovery zLand Size Figure(Unit : mm) zDimensions(Unit : mm) zApplications General rectification RFN20 NS6S zFeatures 1)Low switching loss 2)High current overload capacity LPDS zStructure ROHM : LPDS JEITA : TO263S Manufacture Date zConstruction Silicon epitaxial planer type zTaping Dimensions(Unit : mm) zAbsolute Maximum Ratings(Tc=25°C) Parameter Symbol Conditions ROHM
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