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ISL99125BDRZ-T Intersil Corporation 25A DrMOS Module with Diode Emulation and PS4; QFN24; Temp Range: 0° to 70° visit Intersil
ISL99135BDRZ-T Intersil Corporation 35A DrMOS Module with Diode Emulation and PS4; QFN24; Temp Range: 0° to 70° visit Intersil
TPD4E004DSFR Texas Instruments UNIDIRECTIONAL, SILICON, TVS DIODE visit Texas Instruments

RFN20 DIODE

Catalog Datasheet MFG & Type PDF Document Tags

t2d diode

Abstract: T2D 80 diode Data Sheet Super Fast Recovery Diode RFN20T2D Applications General rectification Dimensions , Silicon epitaxial planer RFN20 T2D 8.0±0.2 12.0±0.2 14.0±0.5 13.5MIN 15.0±0.4 0.2 8.0 , A C C Tc=100°C 1/2Io at per diode 60Hz half sin wave, Non-repetitive one cycle peak value, Tj , Thermal Resistance * per diode IR trr Rth(j-c) Conditions IF=10A VR=200V IF=0.5A,IR=1A,Irr=0.25×I R , :IR(nA) Tj=125°C 10000 Tj=150°C 1000 Tj=75°C 100 Tj=25°C 10 Tj=75°C 0.01 per diode
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t2d diode T2D 80 diode T2D 40 DIODE T2D 80_ diode RFN20 DIODE T2D DIODE 60 R1120A

T2D 40 DIODE

Abstract: Data Sheet AEC-Q101 Qualified Super Fast Recovery Diode RFN20T2DFH Applications General , 12.0±0.2 14.0±0.5 1.2 1.3 0.8 13.5MIN 5.0±0.2 RFN20 T2D â'  Construction Silicon , ) Conditions Limits 200 200 Tc=100°C 1/2Io at per diode 60Hz half sin wave, Non-repetitive one , Rth(j-c) junction to case ï¼ ï¼ 2.0 °C/W Thermal Resistance * per diode , =25°C 10 per diode per diode 0.001 0 500 1000 1 1500 FORWARD VOLTAGE:VF(mV) VF-IF
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T2D diode

Abstract: T2D 80 diode RFN20T2D Data Sheet Super Fast Recovery Diode RFN20T2D Applications General rectification , Construction Silicon epitaxial planer RFN20 T2D 8.0±0.2 12.0±0.2 14.0±0.5 13.5MIN 15.0±0.4 0.2 , 150 Unit V V A A C C Tc=100°C 1/2Io at per diode 60Hz half sin wave, Non-repetitive one cycle , current Reverse recovery time Thermal Resistance * per diode IR trr Rth(j-c) Conditions IF=10A VR , diode 0.001 0 500 1000 1500 FORWARD VOLTAGEVF(mV) VF-IF CHARACTERISTICS per diode 1 0 50 100 150 200
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T2D 09 diode diode t2d 05 T2D 55 diode T2D 1 DIODE diode T2D diode t2d 80

RFN20

Abstract: RFN20 DIODE Data Sheet Super Fast Recovery Diode RFN20NS3S zSerise Standard Fast Recovery zDimensions(Unit : mm) zLand Size Figure(Unit : mm) zApplications General rectification RFN20 NS3S zFeatures 1)Low switching loss 2)High current overload capacity LPDS zStructure ROHM : LPDS JEITA : TO263S Manufacture Date zConstruction Silicon epitaxial planer type zTaping Dimensions(Unit : mm) zAbsolute Maximum Ratings(Tc=25°C) Parameter Repetitive peak reverse voltage Reverse voltage Average
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rfn20n d0835

RFN20NS3S

Abstract: RFN20 RFN20NS3S Data Sheet Super Fast Recovery Diode RFN20NS3S zSerise Standard Fast Recovery zDimensions(Unit : mm) zLand Size Figure(Unit : mm) zApplications General rectification RFN20 NS3S zFeatures 1)Low switching loss 2)High current overload capacity LPDS zStructure ROHM : LPDS JEITA : TO263S Manufacture Date zConstruction Silicon epitaxial planer type zTaping Dimensions(Unit : mm) zAbsolute Maximum Ratings(Tc=25°C) Parameter Repetitive peak reverse voltage Reverse voltage Average
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RFN20NS3 RFN-20 RFN20-NS3S TO-263s
Abstract: Data Sheet Super Fast Recovery Diode RFN20NS4S zSerise Standard Fast Recovery zDimensions(Unit : mm) zApplications General rectification zLand Size Figure(Unit : mm) RFN20 NS4S zFeatures 1)Low switching loss 2)High current overload capacity LPDS zStructure ROHM : LPDS JEITA : TO263S Manufacture Date zConstruction Silicon epitaxial planer type zTaping Dimensions(Unit : mm) zAbsolute Maximum Ratings(Tc=25°C) Parameter Symbol Conditions Limits Unit ROHM
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Abstract: Data Sheet Super Fast Recovery Diode RFN20NS6S zSerise Standard Fast Recovery zDimensions(Unit : mm) zApplications General rectification zLand Size Figure(Unit : mm) RFN20 NS6S zFeatures 1)Low switching loss 2)High current overload capacity LPDS zStructure ROHM : LPDS JEITA : TO263S Manufacture Date zConstruction Silicon epitaxial planer type zTaping Dimensions(Unit : mm) zAbsolute Maximum Ratings(Tc=25°C) Parameter Symbol Conditions Limits Unit ROHM
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RFN20NS4S

Abstract: RFN20NS4S Data Sheet Super Fast Recovery Diode RFN20NS4S zSerise Standard Fast Recovery zDimensions(Unit : mm) zLand Size Figure(Unit : mm) zApplications General rectification RFN20 NS4S zFeatures 1)Low switching loss 2)High current overload capacity LPDS zStructure zConstruction Silicon epitaxial planer type ROHM : LPDS JEITA : TO263S Manufacture Date zTaping Dimensions(Unit : mm) zAbsolute Maximum Ratings(Tc=25°C) Parameter Repetitive peak reverse voltage Reverse voltage
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rfn20

Abstract: RFN20 DIODE Data Sheet Super Fast Recovery Diode RFN20NS6S zSerise Standard Fast Recovery zDimensions(Unit : mm) zLand Size Figure(Unit : mm) zApplications General rectification RFN20 NS6S zFeatures 1)Low switching loss 2)High current overload capacity LPDS zStructure zConstruction Silicon epitaxial planer type ROHM : LPDS JEITA : TO263S Manufacture Date zTaping Dimensions(Unit : mm) zAbsolute Maximum Ratings(Tc=25°C) Parameter Repetitive peak reverse voltage Reverse voltage Average
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RFN20NS3

Abstract: Data Sheet AEC-Q101 Qualified Super Fast Recovery Diode RFN20NS3SFH zSerise Standard Fast Recovery zLand Size Figure(Unit : mm) zDimensions(Unit : mm) RFN20 NS3S zApplications General rectification zFeatures 1)Low switching loss 2)High current overload capacity LPDS zStructure ROHM : LPDS JEITA : TO263S Manufacture Date zConstruction Silicon epitaxial planer type zTaping Dimensions(Unit : mm) zAbsolute Maximum Ratings(Tc=25°C) Parameter Symbol Conditions Limits
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Abstract: Data Sheet Super Fast Recovery Diode RFN20NS4S zSerise Standard Fast Recovery zDimensions(Unit : mm) zLand Size Figure(Unit : mm) zApplications General rectification RFN20 NS4S zFeatures 1)Low switching loss 2)High current overload capacity LPDS zStructure zConstruction Silicon epitaxial planer type ROHM : LPDS JEITA : TO263S Manufacture Date zTaping Dimensions(Unit : mm) zAbsolute Maximum Ratings(Tc=25°C) Parameter Repetitive peak reverse voltage Reverse voltage Average ROHM
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rfn20tf6s

Abstract: RFN20TF6S Data Sheet Super Fast Recovery Diode RFN20TF6S zSerise Standard Fast Recovery zDimensions(Unit : mm) zStructure zApplications General rectification zFeatures 1)Low switching loss 2)High current overload capacity RFN20 TF6S zConstruction Silicon epitaxial planer type ROHM : TO220NFM Manufacture Year Manufacture Week zAbsolute Maximum Ratings(Tc=25°C) Parameter Repetitive peak reverse voltage Reverse voltage Average
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Abstract: Data Sheet AEC-Q101 Qualified Super Fast Recovery Diode RFN20TF6SFH zSerise Standard Fast Recovery zDimensions(Unit : mm) zStructure zApplications General rectification RFN20 TF6S zFeatures 1)Low switching loss 2)High current overload capacity zConstruction Silicon epitaxial planer type ROHM : TO220NFM Manufacture Year Manufacture Week zAbsolute Maximum Ratings(Tc=25°C) Symbol Conditions Limits Unit Repetitive peak reverse voltage Parameter VRM Duty 0.5 ROHM
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RFN20NS6S

Abstract: RFN20 RFN20NS6S Data Sheet Super Fast Recovery Diode RFN20NS6S zSerise Standard Fast Recovery zDimensions(Unit : mm) zLand Size Figure(Unit : mm) zApplications General rectification RFN20 NS6S zFeatures 1)Low switching loss 2)High current overload capacity LPDS zStructure zConstruction Silicon epitaxial planer type ROHM : LPDS JEITA : TO263S Manufacture Date zTaping Dimensions(Unit : mm) zAbsolute Maximum Ratings(Tc=25°C) Parameter Repetitive peak reverse voltage Reverse voltage
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Abstract: Data Sheet Super Fast Recovery Diode RFN20TF6S zSerise Standard Fast Recovery zDimensions(Unit : mm) zStructure zApplications General rectification RFN20 TF6S zFeatures 1)Low switching loss 2)High current overload capacity zConstruction Silicon epitaxial planer type ROHM : TO220NFM Manufacture Year Manufacture Week zAbsolute Maximum Ratings(Tc=25°C) Symbol Conditions Limits Repetitive peak reverse voltage Parameter VRM Duty 0.5 600 V Reverse voltage ROHM
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Abstract: Data Sheet AEC-Q101 Qualified Super Fast Recovery Diode RFN20NS4SFH zSerise Standard Fast Recovery zLand Size Figure(Unit : mm) zDimensions(Unit : mm) zApplications General rectification RFN20 NS4S zFeatures 1)Low switching loss 2)High current overload capacity LPDS zStructure ROHM : LPDS JEITA : TO263S Manufacture Date zConstruction Silicon epitaxial planer type zTaping Dimensions(Unit : mm) zAbsolute Maximum Ratings(Tc=25°C) Parameter Symbol Conditions ROHM
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Abstract: Data Sheet Super Fast Recovery Diode RFN20NS3S zSerise Standard Fast Recovery zDimensions(Unit : mm) zLand Size Figure(Unit : mm) RFN20 NS3S zApplications General rectification zFeatures 1)Low switching loss 2)High current overload capacity LPDS zStructure ROHM : LPDS JEITA : TO263S Manufacture Date zConstruction Silicon epitaxial planer type zTaping Dimensions(Unit : mm) zAbsolute Maximum Ratings(Tc=25°C) Parameter Symbol Conditions Limits Unit Repetitive peak ROHM
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Abstract: Data Sheet Super Fast Recovery Diode RFN20TF6S zSerise Standard Fast Recovery zDimensions(Unit : mm) zStructure zApplications General rectification RFN20 TF6S zFeatures 1)Low switching loss 2)High current overload capacity zConstruction Silicon epitaxial planer type ROHM : TO220NFM Manufacture Year Manufacture Week zAbsolute Maximum Ratings(Tc=25°C) Symbol Conditions Limits Unit Repetitive peak reverse voltage Parameter VRM Duty 0.5 600 V Reverse ROHM
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Abstract: Data Sheet AEC-Q101 Qualified Super Fast Recovery Diode RFN20NS6SFH zSerise Standard Fast Recovery zLand Size Figure(Unit : mm) zDimensions(Unit : mm) zApplications General rectification RFN20 NS6S zFeatures 1)Low switching loss 2)High current overload capacity LPDS zStructure ROHM : LPDS JEITA : TO263S Manufacture Date zConstruction Silicon epitaxial planer type zTaping Dimensions(Unit : mm) zAbsolute Maximum Ratings(Tc=25°C) Parameter Symbol Conditions ROHM
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