500 MILLION PARTS FROM 12000 MANUFACTURERS

DATASHEET SEARCH ENGINE

Search Stock

Shift+Click on the column header for multi-column sorting 
Part
Manufacturer
Supplier
Stock
Best Price
Price Each
Ordering
Part : RF601B2DTL Supplier : ROHM Manufacturer : Avnet Stock : - Best Price : $0.2479 Price Each : $0.3539
Part : RF601B2DTL Supplier : ROHM Manufacturer : Avnet Stock : - Best Price : €0.2169 Price Each : €0.3369
Part : RF601B2DTL Supplier : ROHM Manufacturer : Newark element14 Stock : - Best Price : - Price Each : -
Part : RF601B2DTL Supplier : ROHM Manufacturer : Chip1Stop Stock : 240 Best Price : $1.69 Price Each : $1.78
Shipping cost not included. Currency conversions are estimated. 

RF601B2D Datasheet

Part Manufacturer Description PDF Type
RF601B2D ROHM Fast recovery Diodes (Silicon Epitaxial Planar) Original
RF601B2D ROHM Fast recovery diodes Original
RF601B2DTL ROHM DIODE FAST REC 200V 3A DPAK Original

RF601B2D

Catalog Datasheet MFG & Type PDF Document Tags

RF601B2D

Abstract: RF601B2D Diodes Fast recovery diodes RF601B2D Applications General rectification External dimensions (Unit : mm) Land size figure (Unit : mm) 6.0 0.5±0.1 C0.5 1.5±0.3 Features 1) Power mold type. (CPD) 2) Ultra Low VF 3) Very fast recovery 4) Low switching loss 6.0 2.3±0.2 0.1 , Conditions IF=3A VR=200V IF=0.5A,IR=1A,Irr=0.25*IR JUNCTION TO CASE Rev.B 1/3 RF601B2D Diodes , FORWARD CURRENTIo(A) Io-Pf CHARACTERISTICS Rev.B 2/3 RF601B2D Diodes 15 D=1/2 DC 5 Sin
ROHM
Original
SC-63

RF601B2D

Abstract: RF601B2D Diodes Fast recovery diodes RF601B2D Applications General rectification Dimensions (Unit : mm) Land size figure (Unit : mm) 6.0 0.5±0.1 1.5±0.3 Features 1) Power mold type. (CPD) 2) Ultra Low VF 3) Very fast recovery 4) Low switching loss 6.0 2.3±0.2 0.1 , Conditions IF=3A VR=200V IF=0.5A,IR=1A,Irr=0.25*IR JUNCTION TO CASE Rev.C 1/3 RF601B2D Diodes , RECTIFIED FORWARD CURRENTIo(A) Io-Pf CHARACTERISTICS Rev.C 2/3 RF601B2D Diodes 15 D=1/2 DC
ROHM
Original

RF601B2D

Abstract: RF601B2D Diodes Fast recovery diodes RF601B2D Applications General rectification Dimensions (Unit : mm) Land size figure (Unit : mm) 6.0 2.3±0.2 0.1 6.5±0.2 0.5±0.1 1.5±0.3 6.0 5.1±0.2 0.1 0.65±0.1 2 3 2.3 2.3 CPD 0.5±0.1 1.0±0.2 2.3±0.2 2.3±0.2 , Conditions IF=3A VR=200V IF=0.5A,IR=1A,Irr=0.25*IR JUNCTION TO CASE Rev.E 1/3 RF601B2D Diodes , AVERAGE RECTIFIED FORWARD CURRENTIo(A) Io-Pf CHARACTERISTICS Rev.E 2/3 RF601B2D Diodes 15
ROHM
Original

TO-220FN

Abstract: RF diodes 1series Symbol VRM VR IO IFSM Tj Tstg Limits Unit RF071M2S RF101L2S RF301B2S RF501B2S RF601B2D , RF101L2S RF301B2S RF501B2S RF601B2D RF601T2D RF1001T2D RF1601T2D RF2001T2D IO 0.7A 1A 3A 5A 6A 6A 10A 16A
ROHM
Original
TO-220FN RF diodes TO220FN 10na common anode fast
Abstract: RF601B2D Diodes Fast recovery diodes RF601B2D zApplications General rectification zExternal dimensions (Unit : mm) 6.5±0.2 5.1±0.2 0.1 0.05 1.5±0.3 2.3±0.2 0.1 0.5±0.1 zLand size figure (Unit : mm) 6.0 zFeatures 1) Power mold type. (CPD) 2) Ultra Low VF 3) Very fast recovery 4) Low , RF601B2D Diodes zElectrical characteristic curves 10 10000 Ta=150 Ta=150 100 Ta , RF601B2D Diodes 15 0A 0V AVERAGE RECTIFIDE FORWARD CURRENT:Io(A) 15 Io AVERAGE RECTIFIED FORWARD ROHM
Original
Abstract: RF601B2D Diodes Fast recovery diodes RF601B2D zApplications General rectification zExternal dimensions (Unit : mm) 6.5±0.2 5.1±0.2 0.1 0.05 1.5±0.3 2.3±0.2 0.1 0.5±0.1 zLand size figure (Unit : mm) 6.0 zFeatures 1) Power mold type. (CPD) 2) Ultra Low VF 3) Very fast recovery 4) Low , 16.0±0.2 3.0 2.0 1.6 1.6 6.0 1/3 RF601B2D Diodes zElectrical characteristic curves 10 , FORWARD CURRENTIo(A) Io-Pf CHARACTERISTICS Rev.A 2/3 RF601B2D Diodes 15 0A 0V AVERAGE ROHM
Original

RB601B2D

Abstract: RF601B2D Data Sheet Fast recovery diodes RF601B2D Applications General rectification Dimensions (Unit : mm) Land size figure (Unit : mm) 6.0 3)Very fast recovery 4)Low switching loss Construction Silicon epitaxial planer Structure CPD 2.3 2.3 Structure (2) (1) (3) Taping dimensions (Unit : mm) Absolute maximum ratings (Ta=25C) Parameter Limits Symbol Reverse voltage (repetitive peak) 200 VRM Reverse voltage (DC) 200 VR Average rectified forward current (*1) 6 Io Forward
ROHM
Original
RB601B2D R1120A

application notes frd

Abstract: RF601T Limits Unit RF071M2S RF101L2S RF301B2S RF501B2S RF601B2D RF601T2D RF1001T2D RF1601T2D RF2001T2D 200 , 0.930V 0.870V 5A 10µA 10nA 30ns 15ns Single CPD(D-pack) RF601B2D 6A 200V
ROHM
Original
application notes frd RF601T

2008.07.28

Abstract: DRF601B2D SPICE PARAMETER RF601B2D by ROHM FAE Div. * DRF601B2D D model * Date: 2008/07/28 .MODEL DRF601B2D D + IS=150.44E-12 + N=1.1115 + RS=12.380E-3 + IKF=22.551E-3 + EG=1.0700 + CJO=99.780E-12 + M=.41038 + VJ=.43155 + ISR=411.26E-12 + NR=3 + BV=200 + TT=31.865E-9 -
-
Original
2008.07.28 4315 spice model

MBRS340T3G

Abstract: MBRS360T3G -40 -RF101A2S -RF101L2S -RF601B2D -RB160L-60 - STM
-
Original
MBRM130LT1G MBRM140T1G MBRS130LT3G MBRS140T3G MBRS260T3G MBRS340T3G MBRS360T3G SS34 sma SS14 SOD123 SS34 SMB MBR0520LT1G MBR0530T1G MBR0540T1G MBR120ESFT1G MBR130T1G MBRA130LT3G
Abstract: Data Sheet Fast recovery diodes RF601B2D Dimensions (Unit : mm) Land size figure (Unit : mm) 6.0 Features 1)Power mold type.(CPD) 2)Ultra Low VF 1.6 3.0 1.6 2.0 6.0 Applications General rectification 3)Very fast recovery 4)Low switching loss Structure 2.3 2.3 CPD Construction Silicon epitaxial planer Structure (2) (1) (3)  Taping dimensions (Unit : mm) Absolute maximum ratings (Ta=25ï'°C) Parameter Limits ROHM
Original
Abstract: Data Sheet Fast recovery diodes RF601B2D Dimensions (Unit : mm) Land size figure (Unit : mm) 6.0 Features 1)Power mold type.(CPD) 2)Ultra Low VF 1.6 3.0 1.6 2.0 6.0 Applications General rectification 3)Very fast recovery 4)Low switching loss Structure 2.3 2.3 CPD Construction Silicon epitaxial planer Structure (2) (1) (3)  Taping dimensions (Unit : mm) Absolute maximum ratings (Ta=25ï'°C) Parameter Limits ROHM
Original
Abstract: Data Sheet Fast recovery diodes RF601B2D Applications General rectification Dimensions (Unit : mm) Land size figure (Unit : mm) 6.0 3)Very fast recovery 4)Low switching loss Construction Silicon epitaxial planer Structure CPD 2.3 2.3 Structure (2) (1) (3) Taping dimensions (Unit : mm) Absolute maximum ratings (Ta=25C) Parameter Limits Symbol Reverse voltage (repetitive peak) 200 VRM Reverse voltage (DC) 200 VR Average rectified forward current (*1) 6 Io Forward ROHM
Original

RB601B2D

Abstract: RF601B2D Fast recovery diodes RF601B2D Dimensions (Unit : mm) Land size figure (Unit : mm) 6.0 Features 1)Power mold type.(CPD) 2)Ultra Low VF 1.6 1.6 3)Very fast recovery 4)Low switching loss 3.0 2.0 6.0 Applications General rectification Structure 2.3 2.3 CPD Construction Silicon epitaxial planer Structure (2) (1) (3) Taping dimensions (Unit : mm) Absolute maximum ratings (Ta=25°C) Parameter Limits Symbol Reverse voltage (repetitive peak) 200 VRM
ROHM
Original
R0039A

rf1501

Abstract: RFU20TM5 5 40 0.92 5 10 200 25 0.5 1 CPD (D-Pack) RF601B2D TL 200 200
-
Original
rf1501 RFU20TM5 RF2001 RFUS20 RF1501TF3S RF1501NS3S 52P6217E

RF2001

Abstract: 1SR154 ) RF501B2S 200 200 5 40 0.92 5 10 200 30 0.5 1 CPD (D-Pack) RF601B2D
-
Original
1SR154 1SR154 400V download diode rectifier RF2001T3D 1SR154-400 10a ultra fast diode 52P6148E