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RF NPN POWER TRANSISTOR 10 WATT 2.4 GHZ

Catalog Datasheet MFG & Type PDF Document Tags

rohm mtbf

Abstract: kermet case b Applications MRF20030 30 W, 2.0 GHz NPN SILICON BROADBAND RF POWER TRANSISTOR · · · · · · MAXIMUM , and multi-carrier base station RF power amplifiers. · Specified 26 Volts, 2.0 GHz, Class AB, Two-Tones , Resistor 10 0 , 1/8 W Chip Resistor, Rohm (10J) Transistor, PNP Motorola (BD136) Transistor, NPN Motorola , Flange Mount RF Connector, MA/COM Q1 Q2 R1 R2 R3 R4 R5 R6 R7, R9 R8 Board Transistor, NPN, Motorola , MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub-Micron Bipolar Line RF Power Bipolar
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rohm mtbf kermet case b SILICON PNP POWER TRANSISTOR b 861 933 TRANSISTOR bd136 equivalent 1S211 1S22I
Abstract: ) Intermodulation Distortion â'" â'"30 dBc Max @ 30 Watts (PEP) 30 W, 1.5 GHz RF POWER TRANSISTOR NPN SILICON , NPN Silicon RF Power Transistor MRF15030 Designed for 26 volts microwave largeâ'"signal, common , Transistor, NPN, Motorola (MJD47) 2 x 330 â"¦, 1/8 Watt Chip Resistors in Parallel, Rohm 100 â"¦, 1/8 Watt , R9, R10 Board Transistor NPN Motorola (BD135) Transistor PNP Motorola (BD136) 250 â"¦, 1/8 Watt , POWER (WATTS) 9.6 Pin = 3.5 W 30 25 2.5 W 20 15 10 1.5 W VCC = 26 Vdc ICQ = 125 Motorola
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MRF15030/D

CAPACITOR chip murata mtbf

Abstract: RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ ) Intermodulation Distortion - ­ 30 dBc Max @ 30 Watts (PEP) 30 W, 1.5 GHz RF POWER TRANSISTOR NPN SILICON , NPN Silicon RF Power Transistor MRF15030 Designed for 26 volts microwave large­signal, common , Flange Mount RF Connector, Omni Spectra Transistor PNP Motorola (BD136) Surface Mount Transistor, NPN , Transistor NPN Motorola (BD135) Transistor PNP Motorola (BD136) 250 , 1/8 Watt, Chip Resistor Rohm 500 , 1 , POWER (WATTS) 10.3 Figure 2. Output Power versus Frequency MOTOROLA RF DEVICE DATA TYPICAL
Motorola
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CAPACITOR chip murata mtbf RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ CAPACITOR chip mtbf GX-0300-55-22 IrL 1540 N RF NPN POWER TRANSISTOR C 2 WATT 2 GHZ

bd136 equivalent

Abstract: RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ , Rohm 10 f t 1/2 W, Resistor Transistor, PNP Motorola (BD136) Transistor, NPN Motorola (MJD47) Glass , Mount RF 55-22, Connector, Omni Spectra Transistor, NPN, Motorola (BD135) Transistor, PNP, Motorola , MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub-Micron Bipolar Line RF Power Bipolar , RF power amplifiers. · Guaranteed Two-tone Performance at 2000 MHz, 26 Volts Output Power - 60 Watts , Designed for FM, TDMA, CDMA and Multi-Carrier Applications MRF20060 MRF20060S 60 W, 2000 MHz RF POWER
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RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ motorola rf power transistors mtbf MOTOROLA ELECTROLYTIC CAPACITOR mallory trimmer CHIP - X 0934 2779, transistor IS22I

rohm mtbf

Abstract: CAPACITOR chip murata mtbf , Emitter Ballasted for Long Life and Resistance to Metal Migration 30 W, 1.5 GHz RF POWER TRANSISTOR NPN , Preferred Device NPN Silicon RF Power Transistor Designed for 26 volts microwave large-signal, common , 1.0 10 100 Pout, OUTPUT POWER (WATTS) PEP Pout, OUTPUT POWER (WATTS) PEP Figure 5 , Connector, Omni Spectra Transistor PNP Motorola (BD136) Surface Mount Transistor, NPN, Motorola (MJD47) 2 x , Q1 Q2 R1 R2 R3 R4 R5 R6 R7 R8 R9, R10 Board Transistor NPN Motorola (BD135) Transistor PNP
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CAPACITOR murata mtbf equivalent of transistor BFT 51 2 watt rf transistor RF NPN POWER TRANSISTOR 10 WATT 2.4 GHZ RF NPN POWER TRANSISTOR 1000 WATT BD135 transistor

capacitor mallory

Abstract: RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ Phoenix, AZ. MRF15030 30 W, 1.5 GHz RF POWER TRANSISTOR NPN SILICON · · · · · · · CASE 395C , MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor Designed , Mount RF Connector, Omni Spectra Transistor PNP Motorola (BD136) Surface Mount Transistor, NPN, Motorola , Distortion versus Output Power Figure 4. Performance in Broadband Circuit 0.01 0.10 1.0 10 , R1 R2 R3 R4 R5 R6 R7 R8 R9, R10 Board Transistor NPN Motorola (BD135) Transistor PNP Motorola
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capacitor mallory 1000 watt Motorola power supply 100 watt transistor

bd135 equivalent

Abstract: RF NPN POWER TRANSISTOR 2 WATT 2 GHZ RF power amplifiers. · Guaranteed Two-tone Performance at 2000 MHz, 26 Volts Output Power - 60 Watts , for FM, TDMA, CDMA and Multi-Carrier Applications M RF20060 M RF20060S 60 W, 2000 MHz RF POWER , , Resistor Transistor, PNP Motorola (BD136) Transistor, NPN Motorola (MJD47) Glass Teflon®, Arlon GX , , Omni Spectra Transistor, NPN, Motorola (BD135) Transistor, PNP, Motorola (BD136) 270 Q, Chip Resistor, 1/8 Watt, Rohm 10 KC2,1/4 Watt, Potentiometer 4.7 KQ, Chip Resistor, 1/8 Watt, Rohm 2 x 4.7 K
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bd135 equivalent RF NPN POWER TRANSISTOR 2 WATT 2 GHZ mrf2006 Arlon mallory 170

178 09T

Abstract: 1000 watt Motorola power supply :1 Load VSWR @ 28 Vdc, at Rated Output Power 30 W, 1.5 GHz RF POWER TRANSISTOR NPN SILICON · Gold , MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor Designed , PNP Motorola (BD136) Surface Mount Transistor, NPN, Motorola (MJD47) 2 x 330 £2,1/8 Watt Chip , R9, R10 Board Transistor NPN Motorola (BD135) Transistor PNP Motorola (BD136) 250 Si, 1/8 Watt , versus Output Power Figure 4. Performance in Broadband Circuit I 0 .1 0 1.0 10 0.01
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178 09T transistor MTBF Mallory Capacitor Mallory surface mount Capacitor

RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ

Abstract: 20174 e PTB 20174 90 Watts, 1400­1600 MHz RF Power Transistor Description The 20174 is an NPN, common emitter RF power transistor intended for 26 Vdc class AB operation from 1400 to 1600 MHz. Rated , 0 201 74 Efficiency (%) Output Power (Watts) 100 LOT COD E 30 0 5 10 , 10 1540 30 50 Output Power vs. Supply Voltage 110 Output Power (Watts) 70 90 , C18, C19 L1, L2, L4, L5 L3, L6 L7 R1, R2 R3, R4 FB1, FB2 Circuit Board PTB 20174 - NPN RF
Ericsson
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20174 5801-PC 1-877-GOLDMOS 1301-PTB

RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ

Abstract: RF NPN POWER TRANSISTOR 10 WATT 2.4 GHZ ERICSSON ^ PTB 20174 90 Watts, 1400-1600 MHz RF Power Transistor Description T he 20174 is an NPN, com m on em itter RF power transistor intended for 26 Vdc class AB operation from 1400 to 1600 , R3, R4 FB 1, FB2 Circuit Board PTB 20174 - NPN RF Transistor ,410/. 1.49 GHz Microstrip 50 £2 250/. , 10 15 20 Package 20224 Input Power (Watts) Maximum Ratings Parameter Collector-Em itter , -40 -50 -60 10 30 50 70 90 5 th TOi _ 110 Frequency (MHz) Output Power (Watts-PEP
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RCA-41024

Abstract: rca 0190 transistor File No. 658 RF Power Transistors Solid State Vision 41024 1-W, 1-GHz Silicon N-P-N Overlay Transistor High-Gain Device for Class B- or Cooperation in UHF Circuits Features: â  1-watt output min. at 1 GHz (5 dB gain) â  For sonde applications 0.3-watt output typ. at 1.68 GHz (Vcc = 20 V) RCA-41024 is an epitaxial silicon n-p-n planar transistor of the overlay-emitter-electrode construction. It is , Ratio (Measured at 200 MHz) M 15 50 6.0 - RF Power Output Common Emitter Amplifier at 1 GHz (See
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rca 0190 transistor 41024 4-1024 transistor C4 016 92LS-1845R2 68-GH

RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ

Abstract: MOTOROLA TRANSISTOR 935 for frequency modulated, amplitude modulated and multi­carrier base station RF power amplifiers. 30 W, 2.0 GHz NPN SILICON BROADBAND RF POWER TRANSISTOR · Specified 26 Volts, 2.0 GHz, Class AB , Bipolar Line MRF20030 RF Power Bipolar Transistor Designed for broadband commercial and industrial , % Intermodulation Distortion - ­28 dBc · Typical 26 Volts, 1.88 GHz, Class AB, CW Characteristics Output Power - , Resistor, Rohm 10 , 1/2 W Resistor 10 , 1/8 W Chip Resistor, Rohm (10J) Transistor, PNP Motorola (BD136
Motorola
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MOTOROLA TRANSISTOR 935 bd136 transistor 10J capacitor transistor NPN 30 watt AN 933 motorola motorola 235 mil MRF20030/D

BD135

Abstract: BD136 Bipolar Line MRF20030 RF Power Bipolar Transistor 30 W, 2.0 GHz NPN SILICON BROADBAND RF POWER TRANSISTOR · Specified 26 Volts, 2.0 GHz, Class AB, Two­Tones Characteristics Output Power - 30 Watts , RF OUTPUT C13 Transistor, NPN, Motorola (BD135) Transistor, PNP, Motorola (BD136) 250 W , Volts, 1.88 GHz, Class AB, CW Characteristics Output Power - 30 Watts Power Gain - 10.5 dB , multi­carrier base station RF power amplifiers. ELECTRICAL CHARACTERISTICS - continued (TC = 25°C unless
Motorola
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MOTOROLA 727

bd136 equivalent

Abstract: RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ MRF20060 MRF20060S 60 W, 2000 MHz RF POWER BROADBAND NPN BIPOLAR MAXIMUM RATINGS Rating , ) Transistor, NPN Motorola (MJD47) Glass Teflon®, Arlon GX-0300-55-22 Figure 1. Class AB, 1.93 - 2 GHz Test , Flange Mount RF 55-22, Connector, Omni Spectra Transistor, NPN, Motorola (BD135) Transistor, PNP , Bipolar Line RF Power Bipolar Transistors The MRF20060 and MRF20060S are designed for broadband , modulated and multi-carrier base station RF power amplifiers. · Guaranteed Two-tone Performance at 2000 MHz
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FL 032 PIF pl 032 pif MRF20060/D

RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ

Abstract: RF NPN POWER TRANSISTOR C 2 WATT 2 GHZ frequency modulated, amplitude modulated and multi­carrier base station RF power amplifiers. 60 W, 2000 MHz RF POWER BROADBAND NPN BIPOLAR · Guaranteed Two­tone Performance at 2000 MHz, 26 Volts , R8 R9 R10 Board Type N Flange Mount RF 55­22, Connector, Omni Spectra Transistor, NPN, Motorola (BD135) Transistor, PNP, Motorola (BD136) 270 W, Chip Resistor, 1/8 Watt, Rohm 10 KW, 1/4 Watt , Bipolar Line RF Power Bipolar Transistors MRF20060 MRF20060S The MRF20060 and MRF20060S are
Motorola
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RF NPN POWER TRANSISTOR CLASS 2 WATT 2 GHZ RF NPN POWER TRANSISTOR CLASS 2 WATT 2.4 GHZ x

DBT134

Abstract: 30 W, 2.0 GHz NPN SILICON BROADBAND RF POWER TRANSISTOR · · · · · · MAXIMUM RATINGS Rating , Bipolar Line RF Power Bipolar Transistor Designed for broadband commercial and industrial applications , for frequency modulated, amplitude modulated and m ulti-carrier base station RF power amplifiers. · Specified 26 Volts, 2.0 GHz, Class AB, Two-Tones Characteristics Output Power - 30 Watts (PEP) Power Gain , Resistor, Rohm (10J) Transistor, PNP M otorola (BD136) Transistor, NPN Motorola (MJD47) 30 Mil Glass Teflon
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DBT134 MRF20030R/D RF20030R

RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ

Abstract: NE68839 Bipolar Transistor for pulsed power applications. The device is designed to operate from a 3.6 V supply, and deliver over 1/4 watt of power output at frequencies up to 2.0 GHZ with a 1:8 duty cycle. These , SILICON TRANSISTOR NE68939 NPN SILICON EPITAXIAL TRANSISTOR FEATURES OUTLINE DIMENSIONS , OUTPUT POWER AT 1dB COMPRESSION POINT: 24.5 dBm TYP @F = 1.9 GHZ, VCE = 3.6 V, Class AB, Duty 1/8 · 4 PIN , 3.6 V, IC = 100 mA Output Power Power Gain Collector Efficiency VCE = 3.6 V, f = 1.9 GHZ ICq = 2 mA
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NE68839 PC2771T 2.tx transistor SC-61 NE68939-T1-A NE69039

RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ

Abstract: NE68839 voltage, NPN Silicon Bipolar Transistor for pulsed power applications. The device is designed to operate from a 3.6 V supply, and deliver over 1/2 watt of power output at frequencies up to 2.0 GHZ with a 1:8 , SILICON TRANSISTOR NE69039 NPN SILICON EPITAXIAL TRANSISTOR FEATURES OUTLINE DIMENSIONS , EFFICIENCY, COLLECTOR CURRENT AND POWER GAIN VS. INPUT POWER 30 25 20 15 10 5 IC GP j10 ZIN ZOUT f , Power, Pout (dBm) Collector Currents, IC (mA) C 80 -j10 60 40 20 0 8 7 6 5 4 5 10 15 20
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NE69039-T1-A

UPC277

Abstract: RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ Silicon Bipolar Transistor for pulsed power applications. The device is designed to operate from a 3.6 V supply, and deliver over 1/2 watt of power output at frequencies up to 2.0 GHZ with a 1:8 duty cycle , PRELIMINARY DATA SHEET NPN SILICON EPITAXIAL TRANSISTOR FEATURES NE69039 OUTLINE DIMENSIONS (Units in mm) · OUTPUT POWER AT 1dB COMPRESSION POINT: 27.5 dBm TYP @F = 1.9 GHZ, VCE = 3.6 V , ZIN ZOUT 0 Collector Currents, IC (mA) f = 1.9 GHZ, VCC = 3.6V IC = 1mA (Duty 1/8) Power
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NE69039-T1 UPC277 upc27

RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ

Abstract: PRELIMINARY DATA SHEET NPN SILICON EPITAXIAL TRANSISTOR FEATURES · OUTPUT POWER AT 1dB , NE69039 is a low voltage, NPN Silicon Bipolar Transistor for pulsed power applications. The device is designed to operate from a 3.6 V supply, and deliver over 1/2 watt of power output at frequencies up to 2.0 , Output Power, Pout (dBm) Pout 20 C 80 60 Collector Currents, IC (mA) 25 -j10 15 IC 10 GP 5 40 20 0 8 7 6 5 4 5 10 15 20 25 30 20 10 0 -j25 -j50 -j100 Power Gain, Gp (dB
NEC
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