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RD30HVF1 Datasheet

Part Manufacturer Description PDF Type
RD30HVF1 Mitsubishi Silicon MOSFET Power Transistor,175MHz,30W Original
RD30HVF1 Mitsubishi Silicon MOSFET Power Transistor, 175 MHz, 30 W Original
RD30HVF1-101 Mitsubishi Silicon MOSFET Power Transistor,175MHz,30W Original

RD30HVF1

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: COMPLIANT RD30HVF1-101 is a RoHS compliant products. RoHS compliance is indicate by the letter "G" , MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD30HVF1 OBSERVE HANDLING , RD30HVF1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications , are subject to change. RD30HVF1 MITSUBISHI ELECTRIC 1/8 10 Jan 2006 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, RD30HVF1 Mitsubishi
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transistor D 1666 MITSUBISHI RF POWER MOS FET mos 1718 rf power transistor rd30hvf1 transistor A 564 A 1469 mosfet 175MH
Abstract: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD30HVF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor,175MHz,30W DESCRIPTION OUTLINE DRAWING RD30HVF1 is a MOS , change. RD30HVF1 MITSUBISHI ELECTRIC 1/7 REV.1 14 May. 2003 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD30HVF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor , 0 0 0 RD30HVF1 5 10 Vds(V) 15 0 20 MITSUBISHI ELECTRIC 2/7 5 10 Mitsubishi
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100OHM mosfet 800 v Pch MOS FET S 170 MOSFET TRANSISTOR
Abstract: COMPLIANT RD30HVF1-101 is a RoHS compliant products. RoHS compliance is indicate by the letter "G" , MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD30HVF1 OBSERVE HANDLING , RD30HVF1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications , are subject to change. RD30HVF1 MITSUBISHI ELECTRIC 1/8 7 Dec 2009 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD30HVF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance Mitsubishi
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rd30hvf
Abstract: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD30HVF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor,175MHz,30W DESCRIPTION OUTLINE DRAWING RD30HVF1 is a MOS , : Above parameters , ratings , limits and conditions are subject to change. RD30HVF1 MITSUBISHI , RD30HVF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor,175MHz,30W TYPICAL , =1MHz 16 Crss(pF) Coss(pF) 100 80 60 12 8 40 4 20 0 0 0 RD30HVF1 5 10 Mitsubishi
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transistor 38W 1599 transistor transistor 38W 3 pin TRANSISTOR D 1785
Abstract: COMPLIANT RD30HVF1-101 is a RoHS compliant products. RoHS compliance is indicate by the letter "G" , Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD30HVF1 OBSERVE HANDLING , RD30HVF1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications , are subject to change. RD30HVF1 17 Aug 2010 1/8 Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD30HVF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Mitsubishi
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Abstract: 3.0+/-0.4 5.1+/-0.5 PIN 1.Drain 2.Source 3.Gate UNIT:mm RoHS COMPLIANT RD30HVF1-101 is a , RD30HVF1 DRAWING 22.0+/-0.3 18.0+/-0.3 7.2+/-0.5 7.6+/-0.3 4-C1 RoHS Compliance, DESCRIPTION RD30HVF1 , . RD30HVF1 6 Jul 2010 1/8 Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD30HVF1 Vgs-Ids CHARACTERISTICS 10 8 6 4 2 0 Ta=+25°C Vds=10V RoHS Compliance , Vds(V) 15 20 RD30HVF1 6 Jul 2010 2/8 Silicon RF Power Semiconductors ELECTROSTATIC Mitsubishi
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212J
Abstract: .Drain 2.Source 3.Gate UNIT:mm Mobile radio sets. RoHS COMPLIANT RD30HVF1-101 is a RoHS , < Silicon RF Power MOS FET (Discrete) > RD30HVF1 RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,30W DESCRIPTION OUTLINE RD30HVF1 is a MOS FET type transistor specifically , FET (Discrete) > RD30HVF1 RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,30W , destroy - < Silicon RF Power MOS FET (Discrete) > RD30HVF1 RoHS Compliance, Silicon MOSFET Mitsubishi
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Abstract: RoHS COMPLIANT RD30HVF1-101 is a RoHS compliant products. RoHS compliance is indicate by the letter , < Silicon RF Power MOS FET (Discrete) > RD30HVF1 RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,30W DESCRIPTION RD30HVF1 is a MOS FET type transistor specifically designed for VHF RF , : Oct2011 1 2.3+/-0.3 0.10 < Silicon RF Power MOS FET (Discrete) > RD30HVF1 RoHS Compliance , . Publication Date : Oct2011 2 < Silicon RF Power MOS FET (Discrete) > RD30HVF1 RoHS Compliance, Silicon Mitsubishi
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071J
Abstract: MITSUBISHI RF POWER SEMICONDUCTORS APPLICATION NOTE Document NO. AN-GEN-038 Date : 16th Sep. 2003 Prepared : S.Kametani Confirmed : T.Ohkawa Test result of surge tolerance for RD-series SUBJECT: SUMMARY: This application note show the test results of surge tolerance for RD-series. - Type number RD01MUS1 RD02MUS1 RD07MVS1 RD30HVF1 RD30HUF1 - Conditions Human , ) 200 200 200 V) 2500 2000 2500 RD30HVF1 sample No. #1 #2 #3 sample No. #4 #5 #6 -
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ANGEN038 1.5kohm mitsubishi rf
Abstract: /Nov/02 ELETROSTATTC SENSITIVE DEVICES RD30HVF1 Silicon MOSFET Power Transistor,175MHz 30W DESCRIPTION OUTLINE DRAWING 22. 00 RD30HVF1 is a MOS FET type transistor specifically designed for VHF , HANDLING Revision date:20lh /Nov/02 ELETROSTATIC SENSITIVE v.:;-' d e v ic e s RD30HVF1 , RD30HVF1 Silicon MOSFET Power Transistor, 175MHz 30W ^EQUIVALENT CIRCUIT(f=175MHz) 9 . 1KQ 100Q , DEVICES RD30HVF1 Silicon MOSFET Power Transistor,! 75MHz 30W RD 30H VF1 C a p a c it a n c e - V d -
OCR Scan
Abstract: RD07MVS1 RD30HVF1 RD30HUF1 - Conditions Human model(100pF,1.5KOHM) - Test result Conditions , RD30HVF1 sample No. #1 #2 #3 sample No. #4 #5 #6 sample No. #7 #8 #9 V) 150 150 150 V Mitsubishi
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AN-GEN-038-A
Abstract: RD01MUS1 RD02MUS1 RD07MVS1 RD30HVF1 RD30HUF1 - Conditions Human model(100pF,1.5KOHM) - , ) 2500 2000 2500 RD30HVF1 sample No. #1 #2 #3 sample No. #4 #5 #6 sample No. #7 #8 #9 Mitsubishi
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AN-GEN-038-B
Abstract: MITSUBISHI RF POWER MOS FET ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELETROSTATIC SENSITIVE DEVICES Revision date:27th /Apr.'02 RD30HVF1 OUTLINE DRAWING 22. 00 1 8 .0 0 7 . 20 7 . 60 Silicon MOSFET Power Transistor, 175MHz 30W DESCRIPTION RD30HVF1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications. FEATURES ·High pow er gain: Pout>30W , G p>14.7dB @ Vdd=12.5V,f=175M Hz ·High Efficiency: 60%typ. 2 . 80 s 03 2 . !_ APPLICATION For -
OCR Scan
Abstract: RD60HUF1 RD45HMF1 50 RD30HVF1 RD20HMF1 RD16HHF1 10 RD30HUF1 RD15HVF1 RD06HHF1 , 175/520 0.6/3 15/15 55/50 TO-220S Ceramic(Small) RD30HVF1 Si,MOS 30 75 Mitsubishi
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RD01MUS2 RD100HHF1 RD70HHF1 RD70HVF1 RD06HVF1 RD16HHF1 application notes RD70HVF 30-900MH RD12MVP1 RD12MVS1 RD07MVS2 RD02MUS1/RD02MUS2 RD09MUP2
Abstract: RD30HVF1 RD30HUF1 RD70HVF1 RD60HUF1 RD20HMF1 RD45HMF1 , F M . , . , , % Gp dB . Mitsubishi
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RM15TB-H RM10TB-H RA45H8087M rd00hhf1 rm30tn-h RM10TB CM400HA CM600HA CM600HB CM100DY CM150DY CM200DY