NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS

Datasheet Archive - Datasheet Search Engine

 

RD30HVF1 Datasheet

Part Manufacturer Description PDF Type Ordering
RD30HVF1 Mitsubishi Electric Semiconductor Silicon MOSFET Power Transistor,175MHz,30W
ri

7 pages,
334.34 Kb

Original Buy
datasheet frame
RD30HVF1 Mitsubishi Electric Semiconductor Silicon MOSFET Power Transistor, 175 MHz, 30 W
ri

7 pages,
336.53 Kb

Original Buy
datasheet frame
RD30HVF1-101 Mitsubishi Electric Semiconductor Silicon MOSFET Power Transistor,175MHz,30W
ri

8 pages,
358.59 Kb

Original Buy
datasheet frame

RD30HVF1

Catalog Datasheet Results Type PDF Document Tags
Abstract: COMPLIANT RD30HVF1-101 is a RoHS compliant products. RoHS compliance is indicate by the letter "G" , MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD30HVF1 OBSERVE HANDLING , RD30HVF1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications. , conditions are subject to change. RD30HVF1 MITSUBISHI ELECTRIC 1/8 10 Jan 2006 MITSUBISHI RF , , RD30HVF1 Silicon MOSFET Power Transistor,175MHz,30W TYPICAL CHARACTERISTICS RD30HVF1 MITSUBISHI ... Original
datasheet

8 pages,
358.59 Kb

ZO 607 transistor 100OHM 1666 transistor mitsubishi rf mos 1718 rd30hvf 071J Transistor Marking C3 transistor 0879 1633 MOSFET transistor A 564 A 1469 mosfet rf power transistor rd30hvf1 RD30HVF1 RD30HVF1 abstract
datasheet frame
Abstract: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD30HVF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor,175MHz,30W DESCRIPTION OUTLINE DRAWING RD30HVF1 is a MOS , change. RD30HVF1 MITSUBISHI ELECTRIC 1/7 REV.1 14 May. 2003 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD30HVF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor , 20 0 0 0 RD30HVF1 5 10 Vds(V) 15 0 20 MITSUBISHI ELECTRIC 2/7 5 ... Original
datasheet

7 pages,
334.35 Kb

S 170 MOSFET TRANSISTOR RD30HVF1 Pch MOS FET mosfet 800 v MITSUBISHI RF POWER MOS FET 100OHM RD30HVF1 abstract
datasheet frame
Abstract: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD30HVF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor,175MHz,30W DESCRIPTION OUTLINE DRAWING RD30HVF1 is a MOS , : Above parameters , ratings , limits and conditions are subject to change. RD30HVF1 MITSUBISHI , RD30HVF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor,175MHz,30W TYPICAL , f=1MHz 16 Crss(pF) Coss(pF) 100 80 60 12 8 40 4 20 0 0 0 RD30HVF1 5 ... Original
datasheet

7 pages,
336.53 Kb

TRANSISTOR D 1785 transistor D 1666 transistor 38W 3 pin MITSUBISHI RF POWER MOS FET 100OHM 1599 transistor transistor 38W RD30HVF1 A 1469 mosfet RD30HVF1 abstract
datasheet frame
Abstract: MITSUBISHI RF POWER SEMICONDUCTORS APPLICATION NOTE Document NO. AN-GEN-038 AN-GEN-038 Date : 16th Sep. 2003 Prepared : S.Kametani Confirmed : T.Ohkawa Test result of surge tolerance for RD-series SUBJECT: SUMMARY: This application note show the test results of surge tolerance for RD-series. - Type number RD01MUS1 RD01MUS1 RD02MUS1 RD02MUS1 RD07MVS1 RD07MVS1 RD30HVF1 RD30HUF1 RD30HUF1 - Conditions Human , ) 200 200 200 V) 2500 2000 2500 RD30HVF1 sample No. #1 #2 #3 sample No. #4 #5 #6 ... Original
datasheet

1 pages,
53.87 Kb

RD30HUF1 RD07MVS1 mitsubishi rf 1.5kohm RD30HVF1 RD02MUS1 ANGEN038 RD01MUS1 AN-GEN-038 AN-GEN-038 abstract
datasheet frame
Abstract: 0.10 3.0+/-0.4 5.1+/-0.5 PIN 1.Drain 2.Source 3.Gate UNIT:mm RoHS COMPLIANT RD30HVF1-101 , RD30HVF1 DRAWING 22.0+/-0.3 18.0+/-0.3 7.2+/-0.5 7.6+/-0.3 4-C1 RoHS Compliance, DESCRIPTION RD30HVF1 , tolerance Note : Above parameters , ratings , limits and conditions are subject to change. RD30HVF1 , HANDLING PRECAUTIONS RD30HVF1 Vgs-Ids CHARACTERISTICS 10 8 6 4 2 0 Ta=+25°C Vds=10V RoHS Compliance , ) 15 20 RD30HVF1 6 Jul 2010 2/8 Silicon RF Power Semiconductors ELECTROSTATIC ... Original
datasheet

8 pages,
331.42 Kb

rd30hvf 212J RD30HVF1 RD30HVF1 abstract
datasheet frame
Abstract: COMPLIANT RD30HVF1-101 is a RoHS compliant products. RoHS compliance is indicate by the letter "G" , MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD30HVF1 OBSERVE HANDLING , RD30HVF1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications. , conditions are subject to change. RD30HVF1 MITSUBISHI ELECTRIC 1/8 7 Dec 2009 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD30HVF1 OBSERVE HANDLING PRECAUTIONS RoHS ... Original
datasheet

8 pages,
389.47 Kb

RD30HVF1-101 RD30HVF1 rd30hvf 100OHM RD30HVF1 abstract
datasheet frame
Abstract: COMPLIANT RD30HVF1-101 is a RoHS compliant products. RoHS compliance is indicate by the letter "G" , Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD30HVF1 OBSERVE HANDLING , RD30HVF1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications. , conditions are subject to change. RD30HVF1 17 Aug 2010 1/8 Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD30HVF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET ... Original
datasheet

8 pages,
331.16 Kb

RD30HVF1 100OHM rf power transistor rd30hvf1 RD30HVF1-101 RD30HVF1 abstract
datasheet frame
Abstract: RD07MVS1 RD07MVS1 RD30HVF1 RD30HUF1 RD30HUF1 - Conditions Human model(100pF,1.5KOHM) - Test result Conditions , RD30HVF1 sample No. #1 #2 #3 sample No. #4 #5 #6 sample No. #7 #8 #9 V) 150 150 150 V ... Original
datasheet

1 pages,
15.93 Kb

RD30HVF1 RD30HUF1 RD02MUS1 ANGEN038 RD07MVS1 RD01MUS1 AN-GEN-038-A AN-GEN-038-A abstract
datasheet frame
Abstract: RD01MUS1 RD01MUS1 RD02MUS1 RD02MUS1 RD07MVS1 RD07MVS1 RD30HVF1 RD30HUF1 RD30HUF1 - Conditions Human model(100pF,1.5KOHM) - , ) 2500 2000 2500 RD30HVF1 sample No. #1 #2 #3 sample No. #4 #5 #6 sample No. #7 #8 #9 ... Original
datasheet

1 pages,
133.93 Kb

RD30HVF1 RD30HUF1 RD07MVS1 RD02MUS1 RD01MUS1 1.5kohm AN-GEN-038-B AN-GEN-038-B abstract
datasheet frame
Abstract: RoHS COMPLIANT RD30HVF1-101 is a RoHS compliant products. RoHS compliance is indicate by the letter , < Silicon RF Power MOS FET (Discrete) > RD30HVF1 RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,30W DESCRIPTION RD30HVF1 is a MOS FET type transistor specifically designed for VHF RF , 2.3+/-0.3 0.10 < Silicon RF Power MOS FET (Discrete) > RD30HVF1 RoHS Compliance, Silicon , Publication Date : Oct2011 2 < Silicon RF Power MOS FET (Discrete) > RD30HVF1 RoHS Compliance, Silicon ... Original
datasheet

9 pages,
525.89 Kb

MITSUBISHI RF POWER MOS FET RD30HVF1 RD30HVF1 abstract
datasheet frame