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RCA1B09 Datasheet

Part Manufacturer Description PDF Type Ordering
RCA1B09 N/A Shortform Transistor PDF Datasheet
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1 pages,
156.83 Kb

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RCA1B09 Motorola Motorola Semiconductor Data & Cross Reference Book
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1 pages,
43.07 Kb

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RCA1B09 N/A Semiconductor Master Cross Reference Guide
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1 pages,
114.59 Kb

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RCA1B09

Catalog Datasheet Results Type PDF Document Tags
Abstract: RCA1B09* M in, - 250 275 M ax, 1 1 - 1 1 - U N IT S 200 225 5 - 15 0.75 1.25 - 1 - 1 - 75 2 ... OCR Scan
datasheet

2 pages,
112.52 Kb

92CS-27516 RCA1B09 rca 1b04 430S271 430S271 abstract
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Abstract: Temperature (Tci = 25°C CHARAC- LIMITS TERISTIC TEST CONDITIONS RCA1B04A RCA1B04A RCA1B05 RCA1B05* RCA1B09* UNITS ... OCR Scan
datasheet

2 pages,
64.32 Kb

audio-amplifier 2N5240 rca 1b05 2N5239 RCA1B09 1B04 2N6510 1B04 transistor RCA1B04 rca 1b04 1B05 RCA1B05 datasheet abstract
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Abstract: BU126 BU126 RCA411 RCA411 BUX18B BUX18B RCA423 RCA423 RCA431 RCA431 2N6513 2N6513 BUX18C BUX18C A UDIO TYPES RCA1B06 RCA1B06 RCA1B09 JEDEC TO-3/TQ-204MA ... OCR Scan
datasheet

1 pages,
632.83 Kb

RCA411 RCA1B06 RCA410 datasheet abstract
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Abstract: B0550B B0550B 2SC1864 2SC1864 2SC1867 2SC1867 RCA1B05 RCA1B05 BUX62 BUX62 SK3217 SK3217 RCA1B09 2N6078 2N6078 SML31307 SML31307 XGSA5030 XGSA5030 SOT31307 2N6512 2N6512 2N6514 2N6514 ... Original
datasheet

1 pages,
102.33 Kb

ir431 IR423 BUY18 BU109P BU104 2SC1865 IR430 ir411 BU1040 datasheet abstract
datasheet frame
Abstract: RCA410 RCA410 SK3217 SK3217 RCA1B09 SML31305 SML31305 SDT31305 SDT31305 2N6078 2N6078 2N6077 2N6077 XGSR5030 XGSR5030 IR411 IR411 2N6512 2N6512 2N6514 2N6514 SK3560 SK3560 ... Original
datasheet

1 pages,
141.96 Kb

sgs-ates transistors IR431 RCA410 rca1805 BU409D datasheet abstract
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Abstract: RCA411 RCA411 BUX18B BUX18B RCA423 RCA423 RCA431 RCA431 2N6513 2N6513 BUX18C BUX18C A UDIO TYPES RCA1B06 RCA1B06 RCA1B09 JEDEC TO-3/TQ-204MA Package ... OCR Scan
datasheet

3 pages,
1892.63 Kb

RCA410 datasheet abstract
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Abstract: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Plastic Medium Power Silicon PNP Transistor . . . for amplifier and switching applications. Complementary types are BD437 BD437 and BD441 BD441. BD438 BD438 BD440 BD440 BD442 BD442 4.0 AMPERES POWER TRANSISTORS PNP SILICON нннннннннннннннннннннннннннннннннн нннннннннннннннннннннннннннннннннн нннннннннннннннннн ннннннн нннннннн нннн нннннннннннннннннннннннннннннннннн нннннннннннннннннн ннннннн нннннннн нннн нннннннн нннннннннннннннннн ннннннн нннн нннннннннннннннннн ннннннн ... Original
datasheet

60 pages,
352.5 Kb

BD437 BD441 BD437 abstract
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Abstract: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High-Power Industrial Transistors NPN silicon power transistor designed for applications in industrial and commercial equipment including high fidelity audio amplifiers, series and shunt regulators and power switches. ╥ Collector ╜Emitter Sustaining Voltage - VCEO(sus) = 140 Vdc (Min) ╥ Excellent Second Breakdown Capability 2N3442 2N3442 10 AMPERE POWER TRANSISTOR NPN SILICON 140 VOLTS 117 WATTS нннннннннннннннннннннннннннннннннн ннннннннннннннннннн ... Original
datasheet

60 pages,
364.63 Kb

mje15033 replacement BUV18A datasheet abstract
datasheet frame
Abstract: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Darlington Complementary Silicon Power Transistors . . . designed for general purpose and low speed switching applications. ╥ High DC Current Gain - hFE = 2500 (typ.) at IC = 4.0 ╥ Collector╜Emitter Sustaining Voltage at 100 mAdc VCEO(sus) = 80 Vdc (min.) - BDX33B BDX33B, 34B VCEO(sus) = 100 Vdc (min.) - BDX33C BDX33C, 34C ╥ Low Collector╜Emitter Saturation Voltage VCE(sat) = 2.5 Vdc (max.) at IC = 3.0 Adc - BDX33B BDX33B, 33C/34B 33C/34B, 34C ╥ Monolithic Construction with B ... Original
datasheet

61 pages,
364.44 Kb

mje15033 replacement MJ15024 MJ15025 BDX33B BDX33C 33C/34B 220AB BDX33B abstract
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Abstract: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information Complementary Silicon Power Transistors The MJ15011 MJ15011 and MJ15012 MJ15012 are PowerBase power transistors designed for high╜power audio, disk head positioners, and other linear applications. These devices can also be used in power switching circuits such as relay or solenoid drivers, dc╜to╜dc converters or inverters. ╥ High Safe Operating Area (100% Tested) 1.2 A @ 100 V ╥ Completely Characterized for Linear Operation ╥ High DC Current Ga ... Original
datasheet

59 pages,
358.79 Kb

MJ1000 MJ16010 BUV18A datasheet abstract
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Abstract: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Plastic High Power Silicon PNP Transistor . . . designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits. ╥ DC Current Gain - hFE = 30 (Min) @ IC = 2.0 Adc ╥ BD 808, 810 are complementary with BD 807, 890 MAXIMUM RATINGS Rating BD808 BD808 BD810 BD810* *Motorola Preferred Device ннннннннннннннннннннннн ннннннннннн нннн нннн ннннн ннн ннннннннннннннннннннннн ннннннннннн нннн нннн ннннн ннн ннннннннннн нннн нн ... Original
datasheet

59 pages,
351.62 Kb

ST T4 3580 MJ16110 MJ15024 MJ15025 MJ1000 datasheet abstract
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Shortform Datasheet Search Results

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RCA1B09 N/A Si NPN Power BJT

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