500 MILLION PARTS FROM 12000 MANUFACTURERS

DATASHEET SEARCH ENGINE

Top Results

Part Manufacturer Description Datasheet BUY
RB530XNTR ROHM Semiconductor Diode visit Digikey

Search Stock

Shift+Click on the column header for multi-column sorting 
Part
Manufacturer
Supplier
Stock
Best Price
Price Each
Ordering
Part : RB530XNTR Supplier : ROHM Manufacturer : Avnet Stock : - Best Price : €0.0916 Price Each : €0.1831
Part : RB530XNTR Supplier : ROHM Manufacturer : Avnet Stock : - Best Price : $0.1077 Price Each : $0.1328
Part : RB530XNTR Supplier : ROHM Manufacturer : Chip1Stop Stock : 500 Best Price : $0.8150 Price Each : $0.8590
Part : RB530XNTR Supplier : ROHM Manufacturer : element14 Asia-Pacific Stock : 300 Best Price : $0.17 Price Each : $0.6220
Part : RB530XNTR Supplier : ROHM Manufacturer : Farnell element14 Stock : 300 Best Price : £0.1660 Price Each : £0.3760
Shipping cost not included. Currency conversions are estimated. 

RB530XN Datasheet

Part Manufacturer Description PDF Type
RB530XN ROHM Schottky barrier diode Original
RB530XN ROHM Schottky Barrier Diode Original
RB530XNTR ROHM DIODE SCHOTTKY 30V 100MA SOT363 Original

RB530XN

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: RB530XN Diodes Schottky barrier diode RB530XN Applications Low current rectification External dimensions (Unit : mm) Land size figure (Unit : mm) Each lead has same dimension Features 1) Small mold type. (UMD6) 2) Low IR 3) High reliability. Structure Construction Silicon , 1 μA VR =10V IF =10m A Rev.B 1/3 RB530XN Diodes Electrical characteristic curves (Ta=25 C) Rev.B 2/3 RB530XN Diodes Rev.B 3/3 Appendix Notes No technical ROHM
Original
Abstract: RB530XN Diodes Schottky barrier diode RB530XN External dimensions (Unit : mm) 2.0±0.1 0.25 0.1 Each lead has same dimension 0.05 (2) 0.15 0.1 0.06 0.65 0.65 00.1 0.10.4 1.25±0.1 (4) 1.6 (1) Features 1) Small mold type. (UMD6) 2) Low IR 3) High , Rev.A 1/3 RB530XN Diodes Electrical characteristic curves (Ta=25°C) 1000000 REVERSE CURRENT , REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS Rev.A 2/3 RB530XN Diodes 0.3 0.3 t T DC ROHM
Original
SC-88
Abstract: RB530XN Diodes Schottky barrier diode RB530XN External dimensions (Unit : mm) Applications Low current rectification 緫綌縠縕 3/1â''1/3 è¿"é·ºå¯å½©èè±ª Each lead has same dimension 弁å¾'â"ƒ 1/36â'' 1/2 )7* )6* )2* )3* 緫綌縠縕 1/26â''1/16 !1/16 , A IR - - 1 μA VR =10V Rev.B 1/3 RB530XN Diodes Electrical , ·« è'¼ç¿è'žç¿è'¼è ç¿ç³«è'žè'¤è'聱ç½"ç¿¥ç¿ç¹³è'žè'¼çu"è'žçu™ è'žè'¼ç¶'è'¦è'¼ç³«ç¾'翬ç½"è'¼ç½"ç¾'聱ç¿è'¼ç¿®è è±ç¿®ç¾'聠 Rev.B 2/3 RB530XN ROHM
Original
Abstract: RB530XN Diodes Schottky barrier diode RB530XN External dimensions (Unit : mm) Applications Low current rectification Land size figure (Unit : mm) Each lead has same dimension Features 1) Small mold type. (UMD6) 2) Low IR 3) High reliability. Structure Construction Silicon , - 1 A VR =10V IF =10m A Rev.B 1/3 RB530XN Diodes Electrical characteristic curves (Ta=25 C) Rev.B 2/3 RB530XN Diodes Rev.B 3/3 Appendix Notes No technical ROHM
Original
Abstract: RB530XN Diodes Schottky barrier diode RB530XN Applications Low current rectification External dimensions (Unit : mm) Land size figure (Unit : mm) 0.65 0.9 1.6 Features 1) Small mold type. (UMD6) 2) Low IR 3) High reliability. 0.65 0.35 UMD6 Construction , RB530XN Diodes Electrical characteristic curves (Ta=25ï'°C) 1000000 REVERSE CURRENT:IR(nA) Ta , 0 10 20 30 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS Rev.D 2/3 RB530XN ROHM
Original
R1102A
Abstract: RB530XN Diodes Schottky barrier diode RB530XN !External dimensions (Unit : mm) !Applications Rectifying small power 2.0±0.2 1.3±0.1 0.9±0.1 0.65 0.65 (2) 0.1Min. (1) 3H (4) (5) +0.1 -0.05 K K K (3) (2) (1) 00.1 (6) 0.2 !Construction Silicon epitaxial planar 2.1±0.1 (3) 0.7 1.25±0.1 !Features 1) Small mold type. (UMD6) 2) High , static electricity when handling. 1/2 RB530XN Diodes !Electrical characteristic curves (Ta ROHM
Original
DSA00190294
Abstract: RB530XN Diodes Schottky barrier diode RB530XN Applications Low current rectification External dimensions (Unit : mm) 0.65 2.0±0.2 Each lead has same dimension 0.25± 0.1 (6) (5) (1) (2) 0.65 0.15±0.05 0.05 (4) 0.9 2.1±0.1 1.25±0.1 1.6 , 1/3 RB530XN Diodes Electrical characteristic curves (Ta=25°C) 1000000 REVERSE CURRENT:IR , REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS Rev.B 2/3 RB530XN Diodes 0.3 0.3 0.2 ROHM
Original
Abstract: RB530XN Diodes Schottky barrier diode RB530XN !Applications Rectifying small power !External dimensions (Unit : mm) 2.0±0.2 1.3±0.1 0.9±0.1 0.7 0.1Min. 1.25±0.1 2.1±0.1 (4) (5) !Construction Silicon epitaxial planar ROHM : UMD6 EIAJ : SOT-363 JEDEC : !Absolute maximum ratings (Ta=25°C) Parameter DC reverse voltage Mean rectifying current 1 Peak forward surge curren 2 Junction temperature , 1/2 RB530XN Diodes !Electrical characteristic curves (Ta=25°C) 1 1m 100u 10u 1u 100n 100 ROHM
Original
Abstract: -30 E>RB548W E>RB480Y RB481K CS>RB530XN ORB531XN E>RB481Y B RB521G-30 RB521S-30 RB751S-40 RB715W RB501V , RB481Y RB480K RB481K RB471E RB531XN RB530XN RB731XN RB731U Taping code T2R T2R TE61 TE61 TE61 TE -
OCR Scan
RB160M T-146 RB081L20 T106 SC-74A RB520G RB520S-30 RB501V-40 RB451F RB500V-40
Abstract: RB520S-30 E>RB548W E>RB480Y RB481K CS>RB530XN ORB531XN E>RB481Y B RB521G-30 RB521S-30 RB751S-40 RB715W , RB421D RB420D RB480Y RB481Y RB480K RB481K RB471E RB531XN RB530XN RB731XN RB731U Taping code T2R , Ir= 1 jjA RB481K V f= 0 .5 V Ir= 3 0 jjA UMD6 (SOT-363) RB530XN V f=0.53V Ir= 1 pA -
OCR Scan
TE-17 RB481K SOT-343 UMD2 equivalent RB450F RB751V-40 RB706F-40 RB71SF RB717F RB551V-30
Abstract: REFERENCE 28-Aug-06 ROHM CO.,LTD Di.Manufacturing Div. SPICE PARAMETER RB530XN No. 1 2 3 4 5 6 7 8 9 10 11 12 13 Characteristic of inner diode NAME PARAMETER IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current XTI Temperature Exponent at IS EG Autivation Energy CJO Junction Capacitance M Granding Coefficient VJ Junction Potential FC Depletion Capacitance Coefficient BV Breakdown Voltage IBV Breakdown Current -
Original
664E-08 793E-11 000E-06 656E-09
Abstract: ) RB530XN APPLICATION Rectifying small power IABSOLUTE MAXIMUM RATING (Ta=25tl) C h a ra c te ris tic -
OCR Scan
RB160M-30 RB161 RB161M-20
Abstract: RB480K RB471E RB531XN RB530XN RB731XN RB731U T2R T2R T2R T2R T2R T2R T2R T2R TE61 TE61 , -90 Triple Frequency(pcs.) 40 (40) RB480Y-90 RB531XN RB530XN 0.5 0.35 10 1 1 0.45 ROHM
Original
RSBC6.8CS EDZ TE61 27B 4.3B zener UDZ TE-17 15B RSA5M RSB16VA 51P5917E
Abstract: RB420D RB481Y RB480Y RB481Y-90 RB480Y-90 RB481K RB480K RB471E RB531XN RB530XN RB731XN RB731U , -90 RB531XN RB530XN RB731XN RB731U Absolute Maximum Ratings (Ta=25°C)1 VRM(VR) [V] - (30) 40 ROHM
Original
TUMD2 RB075B40STL RB160M-90 RB215T-60 rsb27f2 RB441Q-40 2007-D 50P5828E
Abstract: Part No. RB531XN RB530XN RB541XN RB731XN RB731U TR TR TR TR T108 Absolute Maximum , RB480K RB471E RB531XN RB530XN RB541XN RB731XN RB731U Note: 1 Value / Element T2R T2R T2R T2R -
Original
RB050M-30 RSX201VA-30 RB080L-30 RB055L-30 RSAC6.8CS RSAC16CS 0603-S R0039A 52P6216E
Abstract: RB530XNFH Diodes AEC-Q101 Qualified Schottky barrier diode RB530XNFH Applications Low current rectification External dimensions (Unit : mm) Land size figure (Unit : mm) Each lead has same dimension Features 1) Small mold type. (UMD6) 2) Low IR 3) High reliability. Construction , IF =100m A IR - - 1 μA VR =10V IF =10m A Rev.B 1/3 Diodes RB530XNFH Electrical characteristic curves (Ta=25 C) Rev.B 2/3 Diodes RB530XNFH Rev.B 3/3 Appendix Infineon Technologies
Original
2sc3052ef 2n2222a SOT23 TRANSISTOR SMD MARKING CODE s2a 1N4148 SMD LL-34 TRANSISTOR SMD CODE PACKAGE SOT23 2n2222 sot23 BF517 BF770A BF771 BF775 BF799 BF799W
Showing first 20 results.