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RA45H7687M1 Datasheet

Part Manufacturer Description PDF Type
RA45H7687M1 Mitsubishi RoHS Compliance, 764-870MHz 45W 12.8V, 2 Stage Amp. For MOBILE RADIO Original
RA45H7687M1-101 Mitsubishi RoHS Compliance, 764-870MHz 45W 12.8V, 2 Stage Amp. For MOBILE RADIO Original

RA45H7687M1

Catalog Datasheet MFG & Type PDF Document Tags

341V

Abstract: VGG13 Miyoshi Electronics) SUBJECT: Recommendation of the output power control for RA45H7687M1 GENERAL: Figure 1 shows recommended output power control of RA45H7687M1, which can be controlled by VGG2 and Pin adjusters. RF OUTPUT of RA45H7687M1 can be controlled from about 1.5W to 45W by applying this system. External Resistor BATTERY Driver Amp RA45H7687M1 P in Control Amp P in & V GG1 PAD P out V , Recommended output power control block diagram for RA45H7687M1 How to supply VGG1 The internal resistor
Mitsubishi
Original
341V VGG13 22an AN-900-026-A 764MH 785MH 806MH 835MH 870MH

RA45H7687M1

Abstract: mitsubishi rf Electronics) SUBJECT: Recommendation of the output power control for RA45H7687M1 GENERAL: Figure 1 shows recommended output power control of RA45H7687M1, which can be controlled by VGG2 and Pin adjusters. RF OUTPUT of RA45H7687M1 can be controlled from about 1.5W to 45W by applying this system. External Resistor BATTERY Driver Amp RA45H7687M1 P in Control Amp P in & V GG1 PAD P out V GG1 , power control block diagram for RA45H7687M1 How to supply VGG1 The internal resistor value in this
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Original
mitsubishi rf sirf 1v GG13 AN-900-026

RA45H7687M1

Abstract: RA45H7687M1-101 RA45H7687M1-101 Antistatic tray, 10 modules/tray RA45H7687M1 MITSUBISHI ELECTRIC 1/9 th 29 , RA45H7687M1 RoHS Compliance, 764-870MHz 45W 12.8V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA45H7687M1 is a 45-watt RF MOSFET Amplifier Module for 12.8-volt mobile radios that operate in the 764- to , : H2M RoHS COMPLIANCE · RA45H7687M1 is a RoHS compliant product. · RoHS compliance is indicate by , PRECAUTIONS RoHS COMPLIANCE RA45H7687M1 MAXIMUM RATINGS (Tcase=+25°C, ZG=ZL=50, unless otherwise
Mitsubishi
Original
DD 128 D transistor 45WATT 764-870MH 870-MH I-20041

mitsubishi Lot No

Abstract: PIN3D Miyoshi Electronics) SUBJECT: AM-AM, AM-PM and Vgg2-PM for RA45H8994M1 and RA45H7687M1 GENERAL: AM-AM , RA45H8994M1 and RA45H7687M1 AN-900-027-A AM-AM & AM-PM for RA45H8994M1 Freq.: 896MHz 40 40 30 , ELECTRIC Silicon RF Power Semiconductors 2/9 AM-AM, AM-PM & Vgg2-PM for RA45H8994M1 and RA45H7687M1 , /9 AM-AM, AM-PM & Vgg2-PM for RA45H8994M1 and RA45H7687M1 AN-900-027-A AM-AM & AM-PM for , RA45H8994M1 and RA45H7687M1 AN-900-027-A AM-AM & AM-PM for RA45H7687M1 Lot No06XXA 40 40 Gain
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Original
mitsubishi Lot No PIN3D RA45H8994M1/7687M1 896MH 069XA 068XA 941MH 06XXA

mitsubishi Lot No

Abstract: AN-900-027 ) SUBJECT: AM-AM, AM-PM and Vgg2-PM for RA45H8994M1 and RA45H7687M1 GENERAL: AM-AM & AM-PM for RA45H8994M1 , Mitsubishi RF Power Semiconductors 1/9 AM-AM, AM-PM & Vgg2-PM for RA45H8994M1 and RA45H7687M1 - AN , , AM-PM & Vgg2-PM for RA45H8994M1 and RA45H7687M1 - AN-900-027 - AM-AM & AM-PM for RA45H8994M1 Freq , Semiconductors 3/9 AM-AM, AM-PM & Vgg2-PM for RA45H8994M1 and RA45H7687M1 - AN-900-027 - AM-AM & AM-PM , RA45H7687M1 - AN-900-027 - AM-AM & AM-PM for RA45H7687M1 Lot No06XXA 40 40 Gain Gain [dB
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Original
MITSUBISHI APPLICATION NOTE RF POWER

RA45H7687M1

Abstract: RF by Miyoshi Electronics) SUBJECT: Recommendation of the output power control for RA45H7687M1 GENERAL: Figure 1 shows recommended output power control of RA45H7687M1, which can be controlled by VGG2 and Pin adjusters. RF OUTPUT of RA45H7687M1 can be controlled from about 1.5W to 45W by applying this system. External Resistor BATTERY Driver Amp RA45H7687M1 P in Control Amp P in & V GG1 PAD , Recommended output power control block diagram for RA45H7687M1 How to supply VGG1 The internal resistor
Mitsubishi
Original
AN-900-026-B
Abstract: electronic Ceramic parts. ORDERING INFORMATION: ORDER NUMBER SUPPLY FORM RA45H7687M1-101 Antistatic tray, 10 modules/tray 1 < Silicon RF Power Modules > RA45H7687M1 RoHS Compliance , < Silicon RF Power Modules > RA45H7687M1 RoHS Compliance, 763-870MHz 45W 12.8V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA45H7687M1 is a 45-watt RF MOSFET Amplifier Module for 12.8 , COMPLIANCE â'¢ RA45H7687M1 is a RoHS compliant product. â'¢ RoHS compliance is indicate by the letter â'Gâ Mitsubishi
Original
763-870MH
Abstract: electronic Ceramic parts. ORDERING INFORMATION: ORDER NUMBER RA45H7687M1-101 SUPPLY FORM Antistatic tray, 10 modules/tray Publication Date : Oct2011 1 < Silicon RF Power Modules > RA45H7687M1 RoHS , < Silicon RF Power Modules > RA45H7687M1 RoHS Compliance, 763-870MHz 45W 12.8V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA45H7687M1 is a 45-watt RF MOSFET Amplifier Module for 12.8 , power. RoHS COMPLIANCE · RA45H7687M1 is a RoHS compliant product. · RoHS compliance is indicate by the Mitsubishi
Original

DD 128 D transistor

Abstract: d408 RA45H7687M1-101 Antistatic tray, 10 modules/tray RA45H7687M1 MITSUBISHI ELECTRIC 1/9 th 18 , RA45H7687M1 RoHS Compliance, 764-870MHz 45W 12.8V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA45H7687M1 is a 45-watt RF MOSFET Amplifier Module for 12.8-volt mobile radios that operate in the 764- to , : H2M RoHS COMPLIANCE · RA45H7687M1 is a RoHS compliant product. · RoHS compliance is indicate by , PRECAUTIONS RoHS COMPLIANCE RA45H7687M1 MAXIMUM RATINGS (Tcase=+25°C, ZG=ZL=50, unless otherwise
Mitsubishi
Original
d408 LT 7212 MHz-860 DD 128 transistor

RA45H7687M1

Abstract: RA45H7687M1-101 RA45H7687M1-101 Antistatic tray, 10 modules/tray 25 Jun 2010 RA45H7687M1 1/10 Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS COMPLIANCE RA45H7687M1 , RA45H7687M1 RoHS Compliance, 763-870MHz 45W 12.8V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA45H7687M1 is a 45-watt RF MOSFET Amplifier Module for 12.8-volt mobile radios that operate in the 763- to , CODE: H2M RoHS COMPLIANCE · RA45H7687M1 is a RoHS compliant product. · RoHS compliance is indicate
Mitsubishi
Original

RA45H7687M1

Abstract: RA45H7687M1-101 RA45H7687M1-101 Antistatic tray, 10 modules/tray RA45H7687M1 MITSUBISHI ELECTRIC 1/9 7 Dec 2009 , RA45H7687M1 RoHS Compliance, 763-870MHz 45W 12.8V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA45H7687M1 is a 45-watt RF MOSFET Amplifier Module for 12.8-volt mobile radios that operate in the 763- to , : H2M RoHS COMPLIANCE · RA45H7687M1 is a RoHS compliant product. · RoHS compliance is indicate by , RA45H7687M1 MAXIMUM RATINGS (Tcase=+25°C, ZG=ZL=50, unless otherwise specified) SYMBOL PARAMETER
Mitsubishi
Original
RF MOSFET MODULE

RA45H7687M1

Abstract: RA45H8994M1 RF by Miyoshi Electronics) SUBJECT: AM-AM, AM-PM and Vgg2-PM for RA45H8994M1 and RA45H7687M1 , for RA45H8994M1 and RA45H7687M1 AN-900-027-B AM-AM & AM-PM for RA45H8994M1 Freq.: 896MHz 40 , Power Semiconductors 2/9 AM-AM, AM-PM & Vgg2-PM for RA45H8994M1 and RA45H7687M1 AN , RA45H7687M1 AN-900-027-B AM-AM & AM-PM for RA45H8994M1 Freq.: 941MHz 30 20 Gain [dB]Relative , , AM-PM & Vgg2-PM for RA45H8994M1 and RA45H7687M1 AN-900-027-B AM-AM & AM-PM for RA45H7687M1 Lot
Mitsubishi
Original