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Part : R2J20071ANS#W0 Supplier : Renesas Electronics Manufacturer : Rochester Electronics Stock : 15,000 Best Price : $0.88 Price Each : $1.09
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R2J2007

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: R2J20071NS/ANS 1 2 3 4 Precautions on Usage 1. IGBT has MOS structure and its gate is Renesas Technology
Original
R2J20071 R2A20070 R2A20070NS REJ03G1866-0100 rjp4007 R2J200
Abstract: chager IC Battery Xe tube Trigger trance Thyristor IGBT Driver (R2J20071NS Renesas Electronics
Original
HAT1089C RJP4004ANS thyristor 12V 100A mosfet 600V 100A 600V 100A thyristor thyristor battery charger 6 thyristor driver circuit RJP4006AGE RJP4007ANS HAT1069C CR05BS-8
Abstract: R2J20071NS/ANS 1 2 3 4 Precautions on Usage 1. IGBT has MOS structure and its gate is Renesas Technology
Original
VSON-8 PVSN0008JA-A