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Power Amplifier Module for GSM

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: HA22006 HA23001 HA16846 HD155001B MOS FET Power Amplifier Module for AMPS Handy Phone MOS FET Power Amplifier Module for E-TACS Handy Phone MOS FET Power Amplifier Module for N-TACS Handy Phone MOS FET Power Amplifier Module for GSM Handy Phone. MOS FET Power Amplifier Module for GSM Handy Phone. MOS FET Power Amplifier Module for GSM Handy Phone. MOS FET Power Amplifier Module for , Switch GaAs MMIC (SPDTSwitch). 1.9 GHz Power Amplifier GaAs MMIC (+22.5 d B m -
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All mobile ic code image HD81504 hitachi pbx ic 747 cn HD814103 HA22004
Abstract: ) multi-mode power amplifier module for GSM/GPRS applications. This module has been optimized for high GSM/GPRS efficiency. The module incorporates two highly integrated InGaP power amplifier die with a CMOS , TQM7M4007 Data Sheet 3V Quad-Band GSM850/GSM900/DCS/PCS Power Amplifier Module Functional , for GSM Operation. This eliminates the need for any external couplers, power detectors, current , output impedances · GPRS class 12. · CMOS band select and internal closed-loop power control for GSM TriQuint Semiconductor
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GSM900 GSM module circuit diagram GSM module BLOCK diagram gsm module datasheet gsm module gsm Handset Circuit Diagram gsm block diagram free
Abstract: ) multi-mode power amplifier module for GSM/GPRS applications. This module has been optimized for high GSM/GPRS efficiency. The module incorporates two highly integrated InGaP power amplifier die with a CMOS controller. The CMOS controller implements a fully integrated closed-loop power control within the module for GSM Operation. This eliminates the need for any external couplers, power detectors, current , TQM7M4007 Data Sheet 3V Quad-Band GSM850/GSM900/DCS/PCS Power Amplifier Module Functional TriQuint Semiconductor
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Abstract: ) multi-mode power amplifier module for GSM/GPRS applications. This module has been optimized for high GSM/GPRS efficiency. The module incorporates two highly integrated InGaP power amplifier die with a CMOS controller. The CMOS controller implements a fully integrated closed-loop power control within the module for GSM Operation. This eliminates the need for any external couplers, power detectors, current , TQM7M4007 Preliminary Data Sheet 3V Quad-Band GSM850/GSM900/DCS/PCS Power Amplifier Module TriQuint Semiconductor
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Abstract: small (5x5x1.0mm3) multi-mode power amplifier module for GSM/EDGE applications. This module has been optimized for high EDGE efficiency and EDGE power class E2 operation while maintaining high GSM/GPRS efficiency. The module incorporates two highly integrated InGaP power amplifier die with a CMOS controller. The CMOS controller implements a fully integrated closed-loop power control within the module for GSM , TQM7M5005H Data Sheet GSM/EDGE Multi-mode Power Amplifier Module Functional Block Diagram TriQuint Semiconductor
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GSM GPRS module CLASS D POWER amplifier diagram gsm block diagram 400KH
Abstract: Description The TQM 7M5004 is an extremely small (7x7x1.1mm3) multi-mode power amplifier module for GSM/EDGE applications. This module has been optimized for high EDGE efficiency and EDGE power class E2 operation while , TQM 7M5004 Preliminary Data Sheet GSM/EDGE Multi-mode Power Amplifier Module Functional Block , control within the module for GSM Operation. This eliminates the need for any external couplers, power , class 12. · CMOS band select and internal closed-loop power control for GSM Operation. · TriQuint Semiconductor
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GSM 300
Abstract: ) multi-mode power amplifier module for GSM/GPRS applications. This module has been optimized for high GSM/GPRS efficiency. The module incorporates two highly integrated InGaP power amplifier die with a CMOS , TQM7M4007 Data Sheet 3V Quad-Band GSM850/GSM900/DCS/PCS Power Amplifier Module Functional , for GSM Operation. This eliminates the need for any external couplers, power detectors, current , · GPRS class 12. · CMOS band select and internal closed-loop power control for GSM Operation. · TriQuint Semiconductor
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3V GSM POWER AMPLIFIER
Abstract: ) multi-mode power amplifier module for GSM/GPRS applications. This module has been optimized for high GSM/GPRS efficiency. The module incorporates two highly integrated InGaP power amplifier die with a CMOS , TQM7M4007 Advance Data Sheet 3V Quad-Band GSM850/GSM900/DCS/PCS Power Amplifier Module , for GSM Operation. This eliminates the need for any external couplers, power detectors, current , · GPRS class 12. · CMOS band select and internal closed-loop power control for GSM Operation. · TriQuint Semiconductor
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GPRS Diagram
Abstract: an extremely small (5x5x1.0mm3) multi-mode power amplifier module for GSM/EDGE applications. This module has been optimized for high EDGE efficiency and EDGE power class E2 operation while maintaining , TQM7M5005 Advance Data Sheet GSM/EDGE Multi-mode Power Amplifier Module Functional Block , fully integrated closed-loop power control within the module for GSM Operation. This eliminates the , internal closed-loop power control for GSM Operation. · High-reliability InGaP technology. · Ruggedness TriQuint Semiconductor
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gsm 900 amplifier
Abstract: small (5x5x1.0mm3) multi-mode power amplifier module for GSM/EDGE applications. This module has been optimized for high EDGE efficiency and EDGE power class E2 operation while maintaining high GSM/GPRS , TQM7M5005 Advance Data Sheet GSM/EDGE Multi-mode Power Amplifier Module Functional Block , control within the module for GSM Operation. This eliminates the need for any external couplers, power , impedances · GPRS class 12. · CMOS band select and internal closed-loop power control for GSM Operation. · TriQuint Semiconductor
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Abstract: an extremely small (5x5x1.0mm3) multi-mode power amplifier module for GSM/EDGE applications. This module has been optimized for high EDGE efficiency and EDGE power class E2 operation while maintaining high GSM/GPRS efficiency. The module incorporates two highly integrated InGaP power amplifier die , TQM7M5005 Advance Data Sheet GSM/EDGE Multi-mode Power Amplifier Module Functional Block , within the module for GSM Operation. This eliminates the need for any external couplers, power detectors TriQuint Semiconductor
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gsm module 900
Abstract: PF1003 MOS FET Power Amplifier Module for GSM Moble Phone Preliminary Features · Low power control current: 400 |iA Typ · High speed switching: 5 (is Typ · Wide power control range: 90 dB Typ , Supply voltage Supply current APC voltage Input power Operating case temperature Storage temperature , power (1 ) VSWR (in) Pout (1) dB dB - Pin = 4 mW, VDD= 12.5 V, Pout = 12 W (at APC controlled , °C Output VSWR = 20 all phases Output power (2) Pout (2) 7.5 - W Isolation - - -
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Abstract: PF0143- MOS FET Power Amplifier Module for GSM Handy Phone For GSM CLASS 4 890-915 MHz I â , .0.9 ps typ. â'¢ Wide Power Control Range.85 dB typ. â  ABSOLUTE MAXIMUM RATINGS (Tc , 3 a APC Voltage Vapc 4 V Input Power Pin 20 mW Operating Case Temperature Tc (op) - 30 ~ +100 "C , -30 dB 3rd Harmonic Distortion 3rd H D. -40 -30 dB Input VSWR VSWR (in) 2 3 â'" Output Power (1) Poutd) 4 0 5.0 - W Pin = 2mW,VDD = 6V,Vapc = 4V, RL = Rg = 50ft, Tc = 25'C Output Power (2) Pout -
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PF0143 pf014 Hitachi Scans-001 vapc
Abstract: PF0150 MOS FET Power Amplifier Module for GSM Handy Phone HITACHI Features · Surface mounted small package 1 cc, 3 g with shielded cover. · High speed switching: 1.2 psTyp. · Low voltage operation: 6 V · Wide power control range: 77 dB Typ. Preliminary Rev. 0 Sep. 1993 Pin Arrangem ent ·R F , voltage Supply current APC voltage Input power Operating case temperature Storage temperature Symbol VDo , distortion Input VSWR Output power (1) Output power (2) Isolation Switching time Stability 3rd H.D. VSW R -
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Abstract: PF0120- MOS FET Power Amplifier Module for GSM Mobile Phone For GSM CLASS 2 890 - 915 MHz I â  FEATURES â'¢ Low Power Control Current .1 mA â'¢ High Speed Switching.1 ju.s â'¢ Wide Power Control Range.90 dB typ. â  ABSOLUTE MAXIMUM RATINGS (Tc - 25 , Vapc 8 V Input Power Pin 20 mW Operating Case Temperature Tc (op) -30 ~ +110 Storage Temperature , '" Output Power (1) Poutd) 13.5 - W Pin = 4mW,VDD = 12.5V, Vapc = 7.5V, Rl - Rg = 50ii, Tc = 25°C Output -
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Abstract: PF0121 Preliminary MOS FET Power Amplifier Module for GSM Mobile Phone â  OUTLINE DRAWING For GSM CLASS2 890 ~ 915 MHz (Unit: mm) â  FEATURES â'¢ Low Power Control Current , Power Control R ange.100 dB typ. â  ABSOLUTE MAXIMUM RATINGS 0 c = , A PC Voltage VAPC 8 V In p ut Power Pin 20 mW O perating Case Tem perature , Power (1) P o u td ) 17 23 - O utput Power (2) P o u tC ) 9 12 - Test -
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Abstract: PF0141 Product Preview MOS FET Power Amplifier Module for GSM Handy Phone For GSM CLASS 4 890 , Switching.0.9 ^s typ. â'¢ Wide Power Control Range.85 dB typ. â , Idd 3 A APC Voltage Vapc 4 V Input Power Pin 20 mW Operating Case Temperature Tc (op) - 30 ~ +100 , Input VSWR VSWR (in) â'" 2 3 â'" Output Power (1) Poutd) 3.6 4.5 - W Pin = 2mW,VDD = 6V,Vapc = 4V, Rl - Rg = son, Tc = 25"C Output Power (2) Pout(2) 2.0 2.8 - W Pin = 2mW,VDD = 5.4V, VAPC = 4V, Rl = Rg -
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Abstract: PF1002 Preliminary MOS FET Power Amplifier Module for GSM Moble Phone Features â'¢ Low power control current: 400 (lA Typ â'¢ High speed switching: 5 |0.A Typ â'¢ Wide power control range: 90 dB , voltage vapc ±8 V Input power Pin 20 mW Operating case temperature TC (op) -40 to +100 °C , distortion 3rd H.D. â'" -50 -40 dB Input VSWR VSWR (in) â'" 1.5 3 Output power (1 ) Pout(1) 8.5 â'" W VDD= 12.5 V, Pin = 2 mW, VAPC = 7.5 V, Tc = 70°C, Rg = RL = 50 Q Output power (2) Pout (2) 6.0 â -
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10wat
Abstract: MMTbEDE G01421R ÜÜT « H I T l bflE D - PF1004 Series - - HITACHI/ (LINEAR DEVICES) MOS FET Power Amplifier Module for GSM Handy Phone Features · · · Low power control current 300 fiA Typ. High speed switching 10 ^ s Typ. Wide power control range 80 dB Typ. Absolute Maximum Ratings (Ta = 25°C) Item Supply voltage Supply current APC voltage Input power Operating case , cutoff current Total efficiency 2nd harmonic distortion 3rd harmonic distortion Input VSWR Output power -
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Abstract: PF1002 MOS FET Power Amplifier Module for GSM Moble Phone Preliminary Features · Low power control current: 400 |J.A Typ · High speed switching: 5 (J.A Typ · Wide power control range: 90 dB Typ , Supply voltage Supply current APC voltage Input power Operating case temperature Storage temperature , distortion 2nd H.D. 3rd harmonic distortion Input V S W R Output power (1 ) 3rd H.D. V S W R (in) Pout (1) 8 5 V DD= 12.5 V, Pin = 2 mW, V APC = 7.5 V, T c = 70°C , Rg = R L = 50 f i Output power (2 -
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