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POWEREST Texas Instruments Power Estimation Tool (PET) visit Texas Instruments
SOLARMAGIC-SOLARPOWEROPTIMIZER-REF Texas Instruments SolarMagic SM3320-RF-EV Solar Power Optimizer with RF Communications Reference Design visit Texas Instruments
POE-PD-POWER-REF Texas Instruments LM5072 5V out 25W IEEE 802.3at Compliant POE+ PD Power Reference Design visit Texas Instruments
MSP430-3P-PCC-LIFETIMEPOWEREVALDEVKT Texas Instruments Lifetime Power? Evaluation and Development Kit visit Texas Instruments
PMP6710 Texas Instruments 85VAC-265VAC Input, 12V/1A Output, Green-mode Flyback With BJT visit Texas Instruments
PMP6788 Texas Instruments 85VAC-265VAC Input, 15V/1A Output, Green-mode Flyback With BJT visit Texas Instruments

Power bjt

Catalog Datasheet MFG & Type PDF Document Tags

high frequency bjt

Abstract: bjt specifications iW1810 Off-Line Digital Green-Mode PWM Controller Integrated with Power BJT 1.0 Features , transistor (BJT) 64 kHz PWM switching frequency No-load power consumption < 100 mW at 230 Vac with typical , PWM flyback power supplies. This device includes an internal power BJT and operates in quasi-resonant , Controller Integrated with Power BJT 4.0 Pinout Description iW1810B 1 2 C C E ISENSE VSENSE 4 VCC GND 8 7 , Collector Collector of internal BJT. Power Input Ground Power supply for control logic. Ground. Analog
iWatt
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power BJT

Abstract: IW1810 iW1810 Off-Line Digital Green-Mode PWM Controller Integrated with Power BJT 1.0 Features , includes an internal power BJT and operates in quasi-resonant mode to provide high efficiency along with a , Digital Green-Mode PWM Controller Integrated with Power BJT Intelligent AC-DC and LED PowerTM 4.0 , Green-Mode PWM Controller Integrated with Power BJT Intelligent AC-DC and LED PowerTM 5.0 Absolute , Controller Integrated with Power BJT Intelligent AC-DC and LED PowerTM 7.0 Electrical Characteristics
iWatt
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bjt 107

Abstract: bjt specifications iW1812 Off-Line Digital Green-Mode PWM Controller Integrated with Power BJT and OTP 1.0 Features , transistor (BJT) 64 kHz PWM switching frequency No-load power consumption < 30 mW at 230 VAC with typical , power BJT and operates in quasi-resonant mode to provide high efficiency along with a number of key , Green-Mode PWM Controller Integrated with Power BJT and OTP 4.0 Pinout Description iW1812 1 2 C C E ISENSE , Collector of internal bipolar junction transistor (BJT). BJT Collector Collector of internal BJT. Power
iWatt
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crt horizontal deflection circuit

Abstract: flyback transformer FBT 18 condition of the power device. Since the turn-off characteristics of the BJT are affected by the base driver's condition, power switching losses are further reduced if the power BJT is operated under optimal , base driving part Q2 of the high voltage power BJT. This part is akin to a fly-back converter and is , the Power BJT Using high voltage power transistors for horizontal deflection output requires the , voltage switching condition. In contrast with the turn-on state, the power BJT is generally turned off at
Fairchild Semiconductor
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Abstract: iW1816 Off-Line Digital Green-Mode PWM Controller Integrated with Power BJT and OTP 1.0 Features , mode PWM flyback power supplies. This device includes an internal power BJT and operates in , BJT and OTP iW1816 Output Power Table at Universal Input (85VACâ'"264VAC) Condition Adapter1 , internal BJT. 4 VCC Power Input 5 GND Ground 6 VSENSE Analog Input Auxiliary , internal BJT (pin 7 and pin 8 must be shorted externally on the PCB). Power supply for control logic iWatt
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W1816 230VAC

MYXB21200-20GAB

Abstract: silicon carbide SiC Power BJT Double 1200 Volt 20 Amp Hermetic MYXB21200-20GAB Product Overview Features y , UK (EMEA & ROW) +44 (0) 1603 788967 â'¢ sales@micross.com â'¢ www.micross.com SiC Power BJT Double , Power BJT Double 1200 Volt 20 Amp Hermetic MYXB21200-20GAB y r a in im l re P Mï'Cï''Rï , '¢ sales@micross.com â'¢ www.micross.com SiC Power BJT Double 1200 Volt 20 Amp Hermetic MYXB21200-20GAB y r a , . Document Title im l re P Silicon Carbide Power BJT Double1200 Volt 20 Amp Hermetic MYXB21200
Micross Components
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silicon carbide 210OC MIL-PRF-19500

Chip-Rail

Abstract: power bjt and power BJT or MOSFET cut-off. So that to detect and modulate the peak current cycle by cycle could , internal register all the time and cut off the power BJT, while the output voltage is lower than the set , Power Compensation The current flowing by the power BJT has an extra value I = VIN × TD due to the system delay TD that the current LP detected from the sense pin to power BJT cut off in the RS2030 , time the power BJT is switched on, a turn-on spike will inevitably occur at the sense pin, which would
Orister
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AP3700 DS-RS2030X-EN-V1 Chip-Rail power bjt sw 13003 transistor EN 13003 13003 MOSFET transistor EN 13003 A RS2030X ACT30

MD1800

Abstract: MD1801 and its related loop devices. High integration design, a high performance power BJT and PFM controller , . FEATURES ◠Built-in 700V@MD1800; 810V@MD1801 power BJT. ◠PSR control, eliminates optocoupler and , R achieves the maximum value, the internal power BJT will be turn off immediately. Power , the auxiliary winding voltage of the transformer. To connect the collector of internal power BJT , the load. Optimized driving circuit greatly promotes withstand voltage of the power BJT and
MIX-DESIGN Semiconductor
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MD1800/01 MD180X TL431 MIX-PD-155787

power BJT

Abstract: S-8100 Applications R1 30K Supply Voltage Power BJT (STD13003) 9.1V Zener (SDZ9V1) Power MOSFET VCC , RFB 1) VCC = VZ - VBE 2) R1 supplies the base current which is necessary to Power BJT base. 3) If , > KSD-I5P011-000 3 S8100 Typical Applications R1 30K Supply Voltage Power BJT (STD13003 , RFB 1) VCC = VZ - VBE 2) R1 supplies the base current which is necessary to Power BJT base. 3) If , S8100 Semiconductor Power LED Driver IC Description The S8100 is a PWM high-efficiency
AUK
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S-8100 pwm driver sot-26 sot-26 led driver pwm 5S8100 9.1V Zener SOT26 PWM

power BJT

Abstract: "Power BJT" 2N6308 Si NPN Power BJT 9.00 Transistors Transistors Bipolar Si NPN Power Transisto. Page 1 of 2 , Part Number: 2N6308 2N6308 Si NPN Power BJT Enter code INTER3 at checkout.* CUSTOMER , ://store.americanmicrosemiconductor.com/2n6308.html 4/12/2010 2N6308 Si NPN Power BJT 9.00 Transistors Transistors Bipolar Si NPN , time.: @V(CE) (V) (Test Condition): Absolute Max. Power Diss. (W): @I(C) (A) (Test Condition): I(CBO , LivePerson Si NPN Power Page. Order Help Desk U.S Orders Your Americanmicrosemi.com Order Secure Order
American Microsemiconductor
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bjt specifications TRANSISTORS BJT list si 1125 h

9.1V Zener

Abstract: S-8100 Power BJT (STD13003) 9.1V Zener (SDZ9V1) VCC OUT CS 0.1uF ON/OFF Power MOSFET C1 10uF S8100 , which is necessary to Power BJT base. 3) If does not use an SHDN function, connect SHDN Pin with the , Supply Voltage Power BJT (STD13003) ISOURCE = (VCC-VTH)/RP [Min500~Max1K] Rp 9.1V Zener (SDZ9V1) VCC , S8100 Power LED Driver IC Description The S8100 is a PWM high-efficiency LED driver control , current, high brightness LEDs up to 1.0 A by using additional external output stages as Power MOSFET. The
Kodenshi AUK
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c18v specifications of bjt rating BJT Driver BJT Gate Drive circuit mk0260 12V 10A BJT KSD-I5P011-001

power BJT

Abstract: 2n6275 2N6275 Si NPN Power BJT 15.98 Transistors Unsorted Transistors Other American Micr. Page 1 of 2 Enter Your Part # Home Online Store Diodes Transistors Integrated Circuits Optoelectronics Thyristors Part Number: 2N6275 2N6275 Si NPN Power BJT Enter code INTER3 at checkout.* CUSTOMER , .html 4/12/2010 2N6275 Si NPN Power BJT 15.98 Transistors Unsorted Transistors Other American Micr , Max. Power Diss. (W): @I(C) (A) (Test Condition): I(CBO) Max. (A): h(FE) Max. Current gain.: h(FE) Min
American Microsemiconductor
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2N6179

Abstract: power BJT 2N6179 Si NPN Power BJT 16.25 Transistors Transistors Bipolar Si NPN Power Transist. Page 1 of 2 , Part Number: 2N6179 2N6179 Si NPN Power BJT Enter code INTER3 at checkout.* CUSTOMER , ://store.americanmicrosemiconductor.com/2n6179.html 4/12/2010 2N6179 Si NPN Power BJT 16.25 Transistors Transistors Bipolar Si NPN , Condition): Absolute Max. Power Diss. (W): @I(C) (A) (Test Condition): I(CBO) Max. (A): h(FE) Max. Current , Si NPN Power Page. Order Help Desk U.S Orders Your Americanmicrosemi.com Order Secure Order
American Microsemiconductor
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Abstract: -001 2 S8100 Typical Applications R1 30K Supply Voltage Power BJT (STD13003) 9.1V Zener , to Power BJT base. 3) If does not use an SHDN function, connect SHDN Pin with the ground. 4) Must , Voltage Power BJT (STD13003) ISOURCE = (VCC-VTH)/RP [Min500 ~Max1K ] Rp 9.1V Zener (SDZ9V1 , necessary to Power BJT base. 3) If does not use an SHDN function, connect SHDN Pin with the ground. 4 , S8100 Power LED Driver IC Description The S8100 is a PWM high-efficiency LED driver control IC AUK
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BDX548

Abstract: power BJT Discrete Power BJT darlington Products IC (A) VCEO (V) VCBO (V) VEBO (V) hFE , www.fairchildsemi.com Discrete Power BJT darlington (Continued) Products IC (A) VCEO (V) VCBO (V , www.fairchildsemi.com Discrete Power BJT darlington (Continued) Products IC (A) VCEO (V) VCBO (V , 750 20000 5 - 2 www.fairchildsemi.com Discrete Power BJT darlington (Continued , www.fairchildsemi.com Discrete Power BJT darlington (Continued) Products IC (A) VCEO (V) VCBO (V
Fairchild Semiconductor
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KSD985 KSD986 KSD1692 BD675A BD677A KSE801 BDX548 KSB1023 MJD117 Darlington bdx33c KSD5018 PNP kse800 KSE800

TRANSISTORS BJT list

Abstract: power BJT 2N6181 Si PNP Power BJT 2.50 Transistors Bipolar Silicon PNP Power Transistors Ame. Page 1 of 2 , Part Number: 2N6181 2N6181 Si PNP Power BJT Enter code INTER3 at checkout.* CUSTOMER , ://store.americanmicrosemiconductor.com/2n6181.html 4/12/2010 2N6181 Si PNP Power BJT 2.50 Transistors Bipolar Silicon PNP Power , . (A): Absolute Max. Power Diss. (W): Maximum Operating Temp (øC): I(CBO) Max. (A): @V(CBO) (V) (Test , Upscreening Tape & Reeling Services 24/7 On-line Sourcing Live Chat by LivePerson Silicon PNP Power
American Microsemiconductor
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power BJT PNP

13003 charger

Abstract: Gate drive output for the external power BJT switch. PIN 6: VDD Package Function Power Supply , Current sensor,it senses the voltage via a sensed resistor PIN 4: OE Emmiter Pin of the power BJT , window ensures that LR5810 can start-up very well. 2. Leading Edge Blanking When th e power BJT is , caused by the fault condition. 7. Current Limit The current through the power BJT is detected by the , LR5810 LR5810 Description The LR5810 series switc her ICs cost effectively rep lace all power
Leshan Radio Company
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13003 charger 54KHZ LR5810-AL LR5810-BL

BJT BD139

Abstract: TIP416 Discrete Power BJT General Purpose Products IC (A) VCEO (V) VCBO (V) VEBO (V , www.fairchildsemi.com Discrete Power BJT General Purpose (Continued) Products IC (A) VCEO (V) VCBO (V , Discrete Power BJT General Purpose (Continued) Products IC (A) VCEO (V) VCBO (V) VEBO (V , 0.2 - 0.7 www.fairchildsemi.com Discrete Power BJT General Purpose (Continued , Power BJT General Purpose (Continued) Products IC (A) VCEO (V) VCBO (V) VEBO (V) hFE
Fairchild Semiconductor
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KSC2682 KSC3502 KSC2258 KSC2258A KSC3503 KSC2688 BJT BD139 TIP416 ksh200 equivalent BD243 ksh50 BD242 KSC3953
Abstract: i, U na. New Jersey Semiconductor
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2N1537A

2N6178

Abstract: power BJT 2N6178 Si NPN Power BJT 4.97 Transistors Transistors Bipolar Si NPN Power Transisto. Page 1 of 1 Enter Your Part # Home Online Store Diodes Transistors Integrated Circuits Optoelectronics Thyristors Part Number: 2N6178 2N6178 Si NPN Power BJT Enter code INTER3 at checkout.* CUSTOMER TESTIMONIALS 1) AMS had the parts that were very difficult to find! 2) Their price was very reasonable (unlike , Power Page. Order Help Desk U.S Orders Your Americanmicrosemi.com Order Secure Order Processing U.S
American Microsemiconductor
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