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Part : PTFB192503FLV2R0XTMA1 Supplier : Infineon Technologies Manufacturer : Avnet Stock : - Best Price : €81.69 Price Each : €93.59
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PTFB183408S

Catalog Datasheet MFG & Type PDF Document Tags

PTFB090901EA

Abstract: -36275-8 PTFB183408SV 1805â'"1880 I/O 340 17.0 25.5 80 WCDMA 30 0.20 H-37275G-6/2
Infineon Technologies
Original
PTFB090901EA PTVA093002TC 960MH 758MH PXAC201602FC 2025MH H-49248H-4
Abstract: Order Code Package Description Shipping PTFB183408SV V2 R250 PTFB183408SVV2R250XTMA1 H , PTFB183408SV High Power RF LDMOS Field Effect Transistor 340 W, 30 V, 1805 â'" 1880 MHz Description The PTFB183408SV is a 340-watt LDMOS FET intended for use in multi-standard cellular power , ) -25 IMD & ACPR (dBc) PTFB183408SV Package H-37275G-6/2 52 Average Output Power (dBm , deviceâ'"observe handling precautions! Data Sheet 1 of 15 Rev. 03, 2014-03-07 PTFB183408SV RF Infineon Technologies
Original
PTFB183408S
Abstract: PTFB183408SV Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 340 W, 30 V, 1805 â'" 1880 MHz Description The PTFB183408SV is a 340-watt LDMOS FET intended , ) PTFB183408SV Package H-34275G-6/2 52 Average Output Power (dBm) RF Characteristics Single-carrier , Rev. 02, 2012-06-28 PTFB183408SV Confidential, Limited Internal Distribution RF Characteristics , PTFB183408SV Confidential, Limited Internal Distribution Maximum Ratings Parameter Symbol Value Infineon Technologies
Original