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    PTFA241301E* Search Results

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    PTFA241301E* Price and Stock

    Infineon Technologies AG PTFA241301E V1

    RF MOSFET LDMOS 28V H-30260-2
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    DigiKey PTFA241301E V1 Tray
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    Infineon Technologies AG PTFA241301EV1

    130 W, 2420-2480 MHZ THERMALLY-ENHANCED HIGH POWER RF LDMOS FET RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
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    ComSIT USA PTFA241301EV1 24
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    PTFA241301E* Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Type PDF
    PTFA241301E Infineon Technologies 2400 MHz to 2700 MHz; Package: PG: H-30260-2; Flange Type: Bolt Down; Matching: I/O; Frequency Band: 2,420.0 - 2,480.0 MHz; P1dB (typ): 130.0 W; Supply Voltage: 28.0 V; Original PDF
    PTFA241301E V1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - IC FET RF LDMOS 130W H-30260-2 Original PDF
    PTFA241301EV1 Infineon Technologies RF FETs, Discrete Semiconductor Products, IC FET RF LDMOS 130W H-30260-2 Original PDF