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Part : DSPIC30F3011-10E/PTB23 Supplier : Microchip Technology Manufacturer : Avnet Stock : - Best Price : - Price Each : -
Part : DSPIC30F3011T-10E/PTB23 Supplier : Microchip Technology Manufacturer : Avnet Stock : 82,200 Best Price : €4.5057 Price Each : €4.6935
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PTB23003X Datasheet

Part Manufacturer Description PDF Type
PTB23003X Philips Semiconductors NPN microwave power transistor Original
PTB23003X Philips Semiconductors Microwave Power Transistor Original
PTB23003X N/A Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan
PTB23003X Philips Semiconductors NPN microwave power transistors Scan
PTB23003XA N/A Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan
PTB23003XA Philips Semiconductors Microwave Power Transistor Scan

PTB23003X

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: Power derating curve; PTB23003X. Philips Semiconductors Product specification PTB23001X , dielectric. Fig.6 Prematching test circuit board for PTB23003X. 1997 Feb 19 6 Philips , DISCRETE SEMICONDUCTORS DATA SHEET PTB23001X; PTB23003X; PTB23005X NPN microwave power , 1997 Feb 19 Philips Semiconductors Product specification PTB23001X; PTB23003X; PTB23005X , e MAM131 Top view MARKING TYPE NUMBER MARKING CODE PTB23001X 2301X PTB23003X Philips Semiconductors
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MSA103 MSA112 PERMITTIVITY* 2.55 SC15 2303X 2305X SCA53
Abstract: r PTB23003X. 4,5 Fig. 7 Prematching test circuit board fo r PTB23005X. Circuits on a double ,   PTB23001X PTB23003X PTB23005X T - 1 3 -o s '' T -IZ -O J MICROWAVE POWER TRANSISTORS N-P-N silicon , 24 24 24 PTB23001X PTB23003X PTB23005X MECHANICAL DATA PL W typ. 1,8 typ. 4,0 typ. 7 , Marking code: 2301X for PTB23001X 2303X for PTB23003X 2305X for PTB23005X (1) Flatness of this , not damaged. . U October 1987 241 N AUER PHILIPS/DISCRETE P'i o iid u u ix PTB23003X -
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S3T31 D150T1 FO-41B
Abstract: derating curve; PTB23003X. 1997 Feb 19 262 Philips Semiconductors Product specification , ; PTB23003X; PTB23005X PINNING - SOT44QA PIN 1 2 3 collector emitter base connected to flange DESCRIPTION MARKING TYPE NUMBER PTB23001X PTB23003X PTB23005X MARKING CODE 2301X 2303X 2305X QUICK REFERENCE DATA Microwave performance up to Tm b = 25 °C in a common-base class B circuit. TYPE NUMBER PTB23001X PTB23003X , ) PTB23001X PTB23003X PTB23005X P.ot total power dissipation PTB23001X PTB23003X PTB23005X Tstg Tj Tsid -
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copper permittivity MLC092
Abstract: PHILIPS INTERNATIONAL PTB23001X PTB23003X PTB23005X PTB23003XA 5bE T> â  711Dfl2t D04b42b , sampling, all other parameters being equal to PTB23003X. QUICK REFERENCE DATA RF performance up to Tmt, = , Copyrighted By Its Respective Manufacturer PTB23001X PTB23003X PTB23005X PTB23003XA PHILIPS INTERNATIONAL , b?^ PTB23001X PTB23003X PTB23005X PTB23003XA IPHIN RTB23001X 23003X 23005X From junction to , -33-01 input A PTB23001X PTB23003X PTB23005X PTB23003XA TllOÃ"Sb 004h430 527 4.5 iphin 2.3 El u J a. v -
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H440 OC292 F0-41B
Abstract: power transistors V 2,84 I output Fig. 6 Prematching test circuit board for PTB23003X. Fig. 7 , N AMER PHILIPS/DISCRETE ObE D I=iki53ci31 DG15Cm T â  PTB23001X PTB23003X PTB23005X T- 11-0 , dB ri % Zj n ZL n PTB23001X c.w. 2 24 typ. 1,8 typ. 9 typ. 50 8 + 114 8 + j20 PTB23003X c.w. 2 24 , Its Respective Manufacturer N AMER PHILIPS/DISCRETE Fi tJüduuix PTB23003X PTB23005X GbE D DD1S1ÃG , . PTB23003X TmbCci Fig. 3 Maximum permissible R.F. power dissipation as a function of mounting base -
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75307 T-33-O DG15C PT823003X L53131 001S10S G01S1Q3
Abstract: Tmb(°C) f > 1 MHz. Fig.3 Power derating curve; PTB23003X. 1997 Feb 19 3 This Material Copyrighted , .6 Prematching test circuit board for PTB23003X. 1997 Feb 19 6 This Material Copyrighted By Its Respective , specification PTB23001X; PTB23003X; PTB23005X PINNING - SOT440A PIN DESCRIPTION 1 collector 2 emitter 3 , + j14 8 + j20 PTB23003X cw 2 24 >3 >8.75 >45 2.5 + j14 8 + j6 PTB23005X cw 2 24 >5 >9.2 >50 1.9 + , MARKING CODE PTB23001X 2301X PTB23003X 2303X PTB23005X 2305X QUICK REFERENCE DATA Microwave -
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marking J6 transistors permittivity
Abstract: DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D031 PTB23003X NPN microwave , Semiconductors Product specification NPN microwave power transistor PTB23003X FEATURES PINNING - , specification NPN microwave power transistor PTB23003X LIMITING VALUES In accordance with the Absolute , Semiconductors Product specification NPN microwave power transistor PTB23003X THERMAL CHARACTERISTICS , transistor PTB23003X APPLICATION INFORMATION Microwave performance in a common-base class B selective Philips Semiconductors
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BP317 DSA005130 SOT440A SCA55
Abstract: PLB16012U PLB16030U PPC5001T PQC5001T PTB23001X PTB23002U PTB23003X PTB23005X PTB23006U PTB32001X PTB32003X -
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BLS2731-50 LAE4001R LFE15 BLS2731-10 BLS2731-20 BLS2731-110 BLS2731-150 LBE2003S
Abstract: PLB16030U PTB23001X PTB23002U PTB23003X PTB23005X PTB23006U PTB32001X PTB32003X PTB32005X STMicroelectronics
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BLF278 BLV36 BLV101A BLV103 BLV946 SD2910 SD1446 philips blx15 MX0912B350Y blw97 BGY916 BLF145 BLF175 BLF177 BLF242 BLF244
Abstract: N AMER PHILIPS/DISCRETE DbE D 1 53^31 001506*1 7 â  ^ PKB23001U PKB23003U PKB23005U MAINTENANCE TYPE (replaced by PTB23001X/PTB23003X/PTB23005X) 3 3 - O X f - 23-07 MICROWAVE POWER TRANSISTORS NPN silicon transistors primarily intended for use in space, military and professional applications up to 2 GHz. They offer the following technological advantages: â'¢ Interdigitated structure: high emitter efficiency â'¢ Diffused emitter ballasting resistors providing excellent current sharing -
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PTB23001X/PTB23003X/PTB23005X 23001U FO-53 7A33-09 2001M 2003M
Abstract: N AMER PHILIPS/DISCRETE ObE ]> â  fc.b53131 001SDfl5 T MAINTENANCE TYPE ~ r E PKB12005lT (for new design use PTB23003X) I I _A r-ii-on C.W. AND PULSED MICROWAVE POWER TRANSISTOR NPN silicon transistor intended for use in military and professional applications. It operates in c.w. and pulsed conditions and is recommended for NAVAID applications (IFF, DME, TACAN) in common-base class-B amplifier up to 1,3 GHz, It offers the following technological advantages: â'¢ Interdigitated structure: high -
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PKB12005U RTC1005 001SD PKB12005 RTC1005M T--33-
Abstract: N AMER PHILIPS/DISCRETE ObE D MAINTENANCE TYPE (replaced by PTB23001X/PTB23003X/PTB23005X) ^53^31 QDISOÃT 7 â  ~ PKB23001U PKB23003U PKB23005U T- 33-OS-f~ 33-e>7 MICROWAVE POWER TRANSISTORS NPN silicon transistors primarily intended for use in space, military and professional applications up to 2 GHz. They offer the following technological advantages: â'¢ Interdigitated structure: high emitter efficiency â'¢ Diffused emitter ballasting resistors providing excellent current sharing and -
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33-OS- F0-53 2005M 0015CH0 T-33-01 T-33-OS
Abstract: LWE2015R MTB10010U MX1011B430W PPC5001T PTB23001X PTB23003X PTB23005X PTB32001X PTB32003X PTB32005X -
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1721E50R 2327E40R Marking Codes Philips MARKING CODE marking codes transistors marking Code philips LAE4002S LBE2009S LCE2009S LEE1015T LTE21009R LTE21015R
Abstract: BSE D N AtlER PHILIPS/DISCRETE â  1,1,53^31 001fc>B33 4 â  -p -33 ~o\ Power Devices 55 MICROWAVE TRANSISTORS CW POWER TRANSISTORS TYPE NO. PACKAGE OUTLINE ♦ PL (G HZ ) VCE (V ) (W> (« ) Gp nc -
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PTB42001X PTB42002X PTB842003X FO-83 PZ1418B15U PZ1418B30U
Abstract: PTB23001X PTB23003X PTB23005X PZ1721B12U RX1214B130Y RX1214B170Y RX1214B150W RX1214B300Y RX1214B350Y STMicroelectronics
Original
2SC1804 2SC2100 2SC2879 2SC2897 SD1477 SD1470 2SC636 2sc635 MHW820-1 TP3008 2SC1257 2SC1258 2SC1259 2SC1605A 2SC1729
Abstract: PTB23003X PTB23005X PTB23006U PTB32001X PTB32003X PTB32005X PVB42004X PXB16050U PZ1418B15U PZ1418B30U -
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LTE42005S Philips Semiconductors Selection Guide RX1214B80W RX1214B170W RZ1214B35Y RZ1214B65Y BLS2731 MF1011B900Y
Abstract: N AflER PH IL IP S/ D IS C R ET E DbE D â  MAINTENANCE TYPE (for new design use PTB23003X) _ GGS3G31 QGISDflS T â  A PKB12005lT 3 1 ^ 7 C.W. AND PULSED MICROWAVE POWER TRANSISTOR NPN silicon transistor intended for use in military and professional applications. It operates in c.w. and pulsed conditions and is recommended for N A V A ID applications (IF F , DME, TACAN) in common-base class-B amplifier up to 1,3 GHz, It offers the following technological -
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53T31
Abstract: PTB23001X PTB23003X PTB23005X PZ1721B12U RX1214B130Y RX1214B170Y RX1214B150W RX1214B300Y RX1214B350Y STMicroelectronics
Original
2SC2894 BLV62 TP3034 TP5051 sd1393 SGS-Thomson cross reference sd4701 2SC1805 2SC1946 2SC1946A 2SC1967 2SC1968A 2SC2082
Abstract: PTB20200 PTB20219 PTB23001X PTB23002U PTB23003X PTB23005X PTB23006U PTB32001X PTB32003X PTB32005X STMicroelectronics
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2SC831 TP3006 TPV3100 MRF648 macom tp9383 transistor 2sC636 MRF255 equivalent 2N5944 2N5945 2N5946 2N6082 2N6084 2N6439
Abstract: MX1011B430W PTB23003X 3205X Philips Semiconductors RF & Microwave Power Transistors General Philips Semiconductors
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Y parameters of transistors transistor equivalent table transistor 2N2219 data sheet y1 marking code transistor similar 2N2219 transistor IC 1032 EQUIVALENT MC3403 2N2219 1N4148 MBC775
Abstract: BSE D N AtlER PHILIPS/DISCRETE â  1,1,53^31 001fc>B33 4 â  -p -33 ~o\ Power Devices 55 MICROWAVE TRANSISTORS CW POWER TRANSISTORS TYPE NO. PACKAGE OUTLINE ♦ PL (G HZ ) VCE (V ) (W> (« ) Gp nc -
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FO-229 E4001R LTE4002S LTE42008R LTE42012R T-100 LZ1418E100R
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