500 MILLION PARTS FROM 12000 MANUFACTURERS

DATASHEET SEARCH ENGINE

Top Results

Part Manufacturer Description Datasheet BUY
DC1319B-A Linear Technology BOARD EVAL LED DRIVER LT3756 visit Linear Technology - Now Part of Analog Devices
DC1205A Linear Technology BOARD EVAL LED DRIVER LT3592 visit Linear Technology - Now Part of Analog Devices
DC1160A Linear Technology BOARD EVAL LED DRIVER LT3518 visit Linear Technology - Now Part of Analog Devices
DC1319A-B Linear Technology BOARD EVAL LED DRIVER LT3756-1 visit Linear Technology - Now Part of Analog Devices
LTC4358IDE#TRPBF Linear Technology LTC4358 - 5A Ideal Diode; Package: DFN; Pins: 14; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LTC4358IDE#PBF Linear Technology LTC4358 - 5A Ideal Diode; Package: DFN; Pins: 14; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy

PS-4512 diode

Catalog Datasheet MFG & Type PDF Document Tags

PS-4512 diode

Abstract: T 4512 H diode A S E A B R O üJN/ABB A3 S E t l IC O N Schnelle Thyristor-Module D | DD4Ã3Dà â¡â¡ â¡ â¡ m T | ~ D T ~ 2, Ç - o ) Fast switching thyristor modules Daten pro Diode oder Thyristor/ data per diode or thyristor/ les caractéristiques se rapportent à 1 diode ou à 1 thyristor It r m s It a v m Tc-= 85°C A M S S 35-04 g -8 M S S 35-08 g -8 M S S 35-09 g -8 M , 45-08 h-8 M S S 45-09 h-8 M S S 45-10 h-8 M S S 45-11 h-8 M S S 45-12 h-8 Nr. E 72873 (M) 400
-
OCR Scan
Abstract: PS-45 Series Features: â'¢ Universal AC input / full range â'¢ Protections: Short Circuit / Overload / Over Voltage/ Over Temperature â'¢ Cooling by free air convection â'¢ DIN rail mountable â'¢ UL508 approved â'¢ LED indicator for power on â'¢ Fix switching frequency at 100kHz â'¢ 100% full load burn-in test â'¢ 3 years warranty Specifications OUTPUT Cat. No. PS-4505 PS-4512 , /p voltage, clamping by zener diode OVER TEMPERATURE ENVIRONMENT SAFETY & EMC Tj 135Ë Altech
Original
PS-4512 PS-4515 PS-4524 230VAC 264VAC 370VDC

PS-45

Abstract: PS-45 Series Features: â'¢ Universal AC input / full range â'¢ Protections: Short Circuit / Overload / Over Voltage/ Overtemperature â'¢ Cooling by free air convection â'¢ DIN rail mountable â'¢ UL508 approved â'¢ LED indicator for power on â'¢ Fix switching frequency at 100kHz â'¢ 100% full load burn-in test â'¢ 3 year warranty Specifications Cat. No. PS-4505 PS-4512 PS , overvoltage, clamping by zener diode OVERTEMPERATURE ENVIRONMENT Tj 135˚C typically (U1) detect on
Altech
Original
115VAC 240VAC MIL-HDBK-217K

T 4512 H diode

Abstract: ps 4512 diode each diode is maintained at +145°C minimum. 4.5.1.2 Alternate mounting conditions (for -US devices). , -19500/420C 15 June 1992 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER, RECTIFIER , diode periphery except the sections of leads over which the diameter is controlled. 4. Dimension , defined in MIL-S-19500, MIL-STD-750, and herein. 7 0000125 0035452 b4fl MIL-S-19500/420D 3.3.2 Diode
-
OCR Scan
1N5550 1N5554 1N5550US 1N5554US 1N5551 1N5551US T 4512 H diode ps 4512 diode diode T 4512 H 1N5552 JANS DIODE MARKING EJL Diode 1n5551 MIL-S-19500/4200 MIL-S-19500/420C

Thyristor ABB ys 150

Abstract: Diode od erT hyristor/data per diode or th y ris to r/les caractéristiques se rapportent à 1 diode ou , MSQ 45-09 g -8 MSQ 45-08 h -8 M S Q 45-09 h -8 MSQ 45-10 h -8 MSQ 45-11 h -8 MSQ 45-12 h -8 N , ) Schneller Thyristor mit Freilaufdiode und Bremsdiode Fast thyristor with free wheeling diode and braking diode Daten pro Diode oder Thyristor/ data per diode or thyristor/ les caractéristiques se rapportent à 1 diode ou à 1 thyristor I tsm V rrm Thyristor V1 Diode V11 Diode V12 Diode V10 Diode
-
OCR Scan
Thyristor ABB ys 150

ps 4512 diode

Abstract: SS44A (Ring) 2/10 Protection Voltage Specified ELEMEKT Diode Crowbar VGG = -48 V FIRST-LEVEL V © 45 A 8 , th e S LIC is m inim ised. Positive o vervoltages are clipped to ground by diode forw ard conduction , negative. V oltage lim iting occurred w hen the negative overvoltage caused the series gate diode. D5, and the thyristor gate-cathode to conduct. As the series gate diode w as connected to the SLIC negative , ,4 is the forw ard voltage o f diode D3 or 0 4 V FD5 is the forw ard voltage o f diode D5 V G G 's
-
OCR Scan
SS44A P61089 PS-4512 diode T1SP61089 TISP61089P TISP61089D TISP61089DR TISP61089

MA334

Abstract: MA334B -pin) s Electrical Characteristics (Ta= 25°C) Parameter Reverse current (DC) Symbol IR CD(3V) Diode capacitance CD(25V) CD(10V) CD(17V) Capacitance ratio Capacitance difference Diode capacitance deviation , Ta=60°C 60 Diode capacitance 10 Forward current 1.00 10V 17V 25V 5 3 2 40 , 4.380 14 4.446 13 4.512 12 4.580 11 4.649 10 4.719 9 4.789 8 4.861 7 4.934 6 5.008 5 5.083 4 5.159 3 , 8 7 6 5 4 3 2 1 4.380 14 4.446 13 4.512 12 4.580 11 4.649 10 4.719 9 4.789 8 4.861 7 4.934 6
Panasonic
Original
MA334 MA334B MA334G MA111 470MH

25V DIODE

Abstract: IR 649 Capacitance ratio CD(3V)/CD(25V) Capacitance difference VR = 30 V Typ CD(25V) Diode capacitance IR Conditions CD(17V)/CD(25V) Diode capacitance deviation Series resistance , ) Diode capacitance CD (pF) 30 20 10 5 3 1.03 1.02 80 Ta = 60°C - 40°C 25 , 11.806 5 11.983 4 12.163 3 12.345 2 12.530 1 12.718 4.380 14 4.446 13 4.512 12 4.580 , 2.220 2.253 2.287 2.321 2.356 CD(25V) (pF) 4.380 14 4.446 13 4.512 12 4.580 11 4.649
Panasonic
Original
MA2X334 25V DIODE IR 649 2619 4446 marking 6D MA2X334B MA2X3340G

f630

Abstract: f 630 Chpt. 45 Final 10/11/99 12:02 PM Page 45.12 Introduction to Lasers Available in: Production Quantities Custom Configurations Designed for industry-standard 2.5-mm-diameter ceramic ferrules or FC connectors, these output couplers may be used with single-mode, multimode, and , Couplers for Fiber-Optic Delivery Systems fC B approx Diode Laser Assemblies Laboratory Diode , . 45.12 1 Visit Us OnLine! www.mellesgriot.com Melles Griot
Melles Griot
Original
f630 f 630 4512 diode polish ferrule small connector flat
Abstract: MWI 45-12 T6K Advanced Technical Information IC25 = 43 A = 1200 V VCES VCE(sat) typ. = , resonant circuits â'¢ HiPerFREDTM diode: - fast reverse recovery - low operating forward voltage - low , reserved 20070912a 1-2 Advanced Technical Information Diodes MWI 45-12 T6K Equivalent , RthCH (per diode) 0.3 0.9 K/W K/W 49 32 Conduction A A Characteristic Values min , Diode (typ. at TJ = 125°C) V0 = 1.6 V; R0 = 13 mΩ Thermal Response Temperature Sensor NTC Symbol IXYS
Original
E72873 B25/85

SHD114436

Abstract: SHD114436A SENSITRON SEMICONDUCTOR SHD114436 SHD114436A SHD114436B TECHNICAL DATA DATA SHEET 4512, REV. A POWER SCHOTTKY RECTIFIER Low Reverse Leakage Applications: · Switching Power Supply · Converters · Free-Wheeling Diodes · Polarity Protection Diode Features: · · · · · · · Ultra Low , sales@sensitron.com · SHD114436 SHD114436A SHD114436B SENSITRON TECHNICAL DATA DATA SHEET 4512, REV. A , - sales@sensitron.com · SENSITRON TECHNICAL DATA DATA SHEET 4512, REV. A SHD114436
Sensitron Semiconductor
Original
Abstract: SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 4512, REV. B SHD114436 SHD114436A SHD114436B POWER SCHOTTKY RECTIFIER Low Reverse Leakage Applications: Switching Power Supply Converters Free-Wheeling Diodes Polarity Protection Diode Features: Ultra Low Reverse Leakage Current Soft Reverse , ://www.sensitron.com sales@sensitron.com SENSITRON TECHNICAL DATA DATA SHEET 4512, REV. B Mechanical Dimensions: in , sales@sensitron.com SENSITRON TECHNICAL DATA DATA SHEET 4512, REV. B SHD114436 SHD114436A SHD114436B Sensitron Semiconductor
Original

v4331

Abstract: NTC 4,7 MWI 45-12 T6K Advanced Technical Information IC25 = 43 A = 1200 V VCES VCE(sat) typ. = , switching - short tail current for optimized performance also in resonant circuits · HiPerFREDTM diode , Information Diodes MWI 45-12 T6K Equivalent Circuits for Simulation Symbol Conditions , = 600 V; VGE = 0 V 25 150 A ns RthJC RthCH (per diode) 0.3 0.9 K/W K/W 49 32 , 125°C) V0 = tbd; R0 = tbd Free Wheeling Diode (typ. at TJ = 125°C) V0 = 1.6 V; R0 = 13 m Thermal
IXYS
Original
v4331 NTC 4,7 NTC M4 igbt sixpack

transistor d 4515

Abstract: 2x58 4.5.12 9 6.5 1 4.5.12 3, 4, 8 4.6 2 4.5.12 7 3.4 5 4.5.12 4.5.13 5 2, 3 2.3 30 4.5.12 6 4.5.12 4.5.13 4.5.15/16 1, 2 1, 4, 5 A G1,G2 A K2 0.73 G 2/10 Overshoot Voltage Specified ELEMENT Diode SCR K2 Terminals K1, K2 , APRIL 2001 Positive overvoltages are clipped to ground by diode forward conduction. Negative , V 100 pF VD = -48 V 50 pF NOTES: 4. The diode forward recovery and the thyristor
Bourns
Original
TISP61089B transistor d 4515 2x58 61089B 79R241 GR-1089-CORE JESD51-2
Abstract: K1 K1 60 Hz Power Fault Times 0.5 1 2 5 30 900 `1089 Test Section 4.5.12 4.5.12 4.5.12 4.5.12 4.5.13 4.5.12 4.5.12 4.5.13 4.5.15/16 Test # 9 3, 4, 8 7 5 2, 3 6 1, 2 1, 4, 5 I TSM A 6.5 4.6 3.4 2.3 , Specified Element Diode SCR ITM = 100 A, di/dt = 80 A/µs V 10 12 Waveshape Voltage 10/700 Current 5/310 , overvoltages are clipped to ground by diode forward conduction. Negative overvoltages are initially clipped , 1 V, IG = 0, (see Note 5) NOTES: 4. The diode forward recovery and the thyristor gate impulse Bourns
Original

diode in 5395

Abstract: MA334 nt en an ce /D is co Diode capacitance Conditions 10 nA 12.781 pF , ) Capacitance ratio Diode capacitance deviation Min rD CD = 9 pF, f = 470 MHz pF 2 0.38 , MHz Ta = 25°C 50 Diode capacitance CD (pF) CD Ta IF V F 120 100 100 40 0 , 11.806 5 11.983 4 12.163 3 12.345 2 12.530 1 12.718 4.380 14 4.446 13 4.512 12 4.580 , 2.220 2.253 2.287 2.321 2.356 CD(25V) (pF) 4.380 14 4.446 13 4.512 12 4.580 11 4.649
Panasonic
Original
diode in 5395

61089B

Abstract: 2X022 Test # A 0.5 4.5.12 9 6.5 1 4.5.12 3, 4, 8 4.6 2 4.5.12 7 3.4 5 4.5.12 4.5.13 5 2, 3 2.3 30 4.5.12 6 1.3 900 4.5.12 4.5.13 4.5.15 , for ITU-T K.20, K.21 and K.45 ITM = 100 A, di/dt = 80 A/µs V Diode Waveshape Voltage 12 , clipped to ground by diode forward conduction. Negative overvoltages are initially clipped close to the , . The diode forward recovery and the thyristor gate impulse breakover (overshoot) are not strongly
Bourns
Original
2X022 TISP61089BD TISP61089BDR TISP61089BDR-S dimension TISP61089BDR-S TISP61089BD-S

61089b

Abstract: TH3 thermistor shown in parenthesis device symbol K1 `1089 TEST SECTION TEST # A 0.5 4.5.12 9 6.5 1 4.5.12 3, 4, 8 4.6 2 4.5.12 7 3.4 5 4.5.12 4.5.13 5 2, 3 2.3 30 4.5.12 6 1.3 900 G K1 ITSM 60 Hz POWER FAULT TIME s 4.5.12 , ELEMENT Diode SCR K2 ITM = 100 A, di/dt = 80 A/µs V 10 12 Rated for ITU-T K.20, K.21 and K , Positive overvoltages are clipped to ground by diode forward conduction. Negative overvoltages are
Texas Instruments
Original
TH3 thermistor TISP610 TI61

TH3 thermistor

Abstract: 61089B K1 K1 60 Hz Power Fault Times 0.5 1 2 5 30 900 `1089 Test Section 4.5.12 4.5.12 4.5.12 4.5.12 4.5.13 4.5.12 4.5.12 4.5.13 4.5.15/16 Test # 9 3, 4, 8 7 5 2, 3 6 1, 2 1, 4, 5 I TSM A 6.5 4.6 3.4 2.3 , Specified Element Diode SCR ITM = 100 A, di/dt = 80 A/µs V 10 12 Waveshape Voltage 10/700 Current 5/310 , clipped to ground by diode forward conduction. Negative overvoltages are initially clipped close to the , Note 5) NOTES: 4. The diode forward recovery and the thyristor gate impulse breakover (overshoot
Bourns
Original

PED relay cross reference

Abstract: AC OVER VOLTAGE PROTECTOR 60 Hz Power Fault Times Section Test # A 0.5 4.5.12 9 6.5 1 4.5.12 3, 4, 8 4.6 2 4.5.12 7 3.4 5 4.5.12 4.5.13 5 2, 3 2.3 30 4.5.12 6 1.3 900 4.5.12 4.5.13 4.5.15/16 1, 2 1, 4, 5 0.73 K1 A G A K2 2/10 , V Diode Voltage Current ITSP A 10/700 10 SCR Waveshape 5/310 40 12 , the SLIC is minimized. Positive overvoltages are clipped to ground by diode forward conduction
Bourns
Original
PED relay cross reference AC OVER VOLTAGE PROTECTOR AC VOLTAGE PROTECTOR PED relay THERMISTORS SCK 016 TRANSISTOR S2A
Showing first 20 results.