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POWEREST Texas Instruments Power Estimation Tool (PET) visit Texas Instruments
TIP115 Texas Instruments PnP Darlington - Connected Silicon Power Transistors 3-TO-220 visit Texas Instruments
TIP117 Texas Instruments PnP Darlington - Connected Silicon Power Transistors 3-TO-220 visit Texas Instruments
ISL73096RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
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PNP power transistors by hitachi

Catalog Datasheet MFG & Type PDF Document Tags

BC548 TRANSISTOR REPLACEMENT

Abstract: 1n4007 smd, toshiba , our complete portfolio contains innovative, highly integrated power discretes including transistors , switching bipolar transistors, power diodes, and triacs and thyristors match your power needs in a myriad , Cellular base-station amplifier modules · Cellular base-station RF power transistors · Broadcast RF power transistors · Avionics, L-band and S-band radar power transistors · Power amplifier modules · Wideband , Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes
Philips Semiconductors
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2SB367

Abstract: TRANSISTOR 2sb367 HITACHI TRANSISTORS â'"FOR MEDIUM POWER AMPLIFIER USEâ'" The Hitachi 2SB367 and 2SB368 are germanium PNP alloyed junction type transistors, featuring high current transfer ratio which can not be attained by conventional alloyed junction power transistors. The dependence of current gain on collector , Resistance Rl is specified by primary impedance of output transformer (Collector to Collector). ^Hitachi , power home radio receivers. ABSOLUTE MAXIMUM RATINGS (At 25C° Ambient Temperature) Item Symbol 2SB367
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2SB77A 2SB77 TRANSISTOR 2sb367 PNP power transistors by hitachi 2SB368 B B77A hitachi 2SB77 TK2395

HTK0030

Abstract: PNP power transistors by hitachi March 1998 No.16 Hitachi Power Devices Technical Information PD Room For about three , on the manufacturer's side by means of sorting. However, it is necessary for the users to provide , by users to minimize such line unbalancing. As a general guideline, it is recommended to limit the , ., Hitachi's driver model HTK0030) that contains some signal processing circuit (photo-coupler, over , recommended to design a buffer circuit as shown in Fig. 1 below. Here, note that transistors Q1 and Q2
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IGBT Drivers Transistors 2SB1165 2SB1166 2SD1722 2SD1723 JASO

2sk170bl spice

Abstract: 2SK170BL . These transistors, manufactured according to the double poly process, are characterised by their high , at single 3 V supply voltage and 0 dBm input power. Biasing is done by a circuit around a NPN , transistors 6.3 Varicap diodes 6.4 Bandswith diodes 6.5 Fet's 6.6 Pin diodes à page: 39-40 page , which are covered by this manual. Radio spectrum and wavelengths Electromagnetic radiation can be , equally wide range of pin diodes, MMICs and wide band transistors are available. The MMIC and wide band
Philips Semiconductors
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2sk170bl spice 2SK170BL BF256B PHILIPS SEMICONDUCTOR UHF preamplifier for BF998 small signal transistor philips manual philips BFG235 BGA2003 BGA2022 BFG425W

2SC984

Abstract: 2SC708 HITACHI TRANSISTORS â'"FOR COMPLEMENTARY SYMMETRY OTL AMP.â'" The Hitachi 2SA537 and 2SA537A are silicon PNP epitaxial planar type transistors with high breakdown voltage and good linearity of DC , , especially featuring in complementary symmetry with the Hitachi transistor 2SC708 and 2SC708A. ABSOLUTE , 2SA537 and 2SA537A are grouped by Hfe (Vce = ® 35-70, ® 60-120, © 100-200 -500 -4V, 7c=-50mA) as , Emitter Voltage Vce (V) Typical Output Characteristics (2) 0 HITACHI â'¢500 -400 -300
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2SC458 2SC984 hitachi 2sc984 Hitachi transistor 2SC984 HITACHI 2SC458G 2SC708 A 2SC708C35V 1S312X2

re 10019

Abstract: 2SB77 HITACHI TRANSISTORS -FOR AUDIO FREQUENCY OUTPUT AMPLIFIER USE The Hitachi 2SB370 and 2SB370A are germanium PNP alloyed junction type transistors, intended for use as audio frequency output stage , specified by primary impedance of output transformer (Collector to Collector) ^Hitachi, Ltd. Head Office , linear dependency of current transfer ratio on collector current up to rated value. These transistors are effectively used as medium power output sta^e amplifiers of portable radios, car radio receivers
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re 10019 D1E THERMISTOR 2SB77 Hitachi 2SB77 C 2sb77 d nz16 CS-E160

2SK170BL

Abstract: 2SK508 reliable and may be changed without notice. No liability will be accepted by the publisher for any , (see also appendix) Product portfolio 4.1 Pin diodes 4.2 MMIC's 4.3 Wideband transistors 4.4 , -17 gen. purpose wideband ampl., 50 Ohm Gain Blocks BGA6x89 gen. purpose medium power ampl., 50 Ohm Gain , medium power amplifiers appendix F Application diagrams & reference designs - improved tuning, LNB , New Wideband transistors Product Type BFG310(W)/XR BFG325(W)/XR BFG425F Application/description
Philips Semiconductors
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2SK508 tcxo philips 4322 BFG135 power amplifier for 900Mhz 2SK147BL 2sk162 hitachi 2sk170y BF1107/8 BGA2715-17

20000w audio amplifier circuit diagram

Abstract: Sony Semiconductor Replacement Handbook 1991 output signal of a transmitter power amplifier is transported by a coaxial cable to a suitable location , wideband transistors: BFG403W/410W/425W/480W RF power amplifier modules: BGY240S/241/212/280 2nd , impedance can appear but we try to come to 50 by special network design for optimum low loss power transfer , specified just by their large signal DC-parameters like DC-current gain (B, ß, hfe), max. power dissipation , :// 7. Selection Guides 7.1 MMIC's 7.2 Wideband transistors 7.3
Philips Semiconductors
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20000w audio amplifier circuit diagram Sony Semiconductor Replacement Handbook 1991 20000w audio amplifier pcb IRF power mosfets catalog IRF TRANSISTOR SUBSTITUTION philips rf manual BB202 BGA6589

tcxo philips 4322

Abstract: philips tcxo 4322 190 reliable and may be changed without notice. No liability will be accepted by the publisher for any , Bipolar transistors 4.2.1 Wideband transistors page: 18 - 20 4.3 RF IC's 4.3.1 page: 21 MMIC's 4.4 RF MOS transistors 4.4.1 J-fets 4.4.2 Mos-fets page: 22 - 23 page: 24 - 25 4.5 , B: BGA6x89 general purpose medium power amplifier, 50 Ohm Gain Blocks Appendix C: Introduction , Modules BGO807 Optical Receiver, SOT115 UGD10420 Power Doubler, 1 GHz, 22-dB, GaAs MMIC CGD1042 Power
Philips Semiconductors
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philips tcxo 4322 190 ISO9001-Certified philips bfq32 philips bare die datasheet ON4749 philips BFG196 Sony Semiconductor Replacement Handbook

negative Voltage Switching Regulator

Abstract: HA17723 rejection ratio. Output current above 150mA is also available by adding PNP or NPN transistors externally , HITACHI This Material Copyrighted By Its Respective Manufacturer HA17723G,HA17723 â  ABSOLUTE MAXIMUM , > HITACHI This Material Copyrighted By Its Respective Manufacturer 101 HA17723G,HA17723 LOAD REGULATION , " â'" -2 -4 * Sus-^div Time (w) 0 HITACHI This Material Copyrighted By Its Respective , 104 0 HITACHI This Material Copyrighted By Its Respective Manufacturer HA17723G,HA17723 1.4 How to
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DP-14 negative Voltage Switching Regulator high voltage regulator schematic voltage regulator 120 volt input 24 volt output negative VOLTAGE REGULATOR 3.7v 7723 regulator hitachi ha DG-14

ZO125

Abstract: transistor c373 structure of CMOS logic ICs. Since CMOS has PMOS and NMOS on one chip. NPN and PNP transistors are made , * parasitic thyristor >· mad« up o f p*r»«itic PNP and NPN transistors. Figure 4 Parasitih Thyristor 81 , Powar dissipation capacitance Power dissipation capacitance (CM) can be calculated by the following equations, P t i=C m The power dissipation PT of high-speed CMOS logic can be calculated by (1). From , frequency f2 Table 2 lists the power dissipation capacitance of Hitachi's high-speed CMOS logic. Furthermore
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ZO125 transistor c373 HD74HC273 74hc123 application notes 3T5T 74HC244 14000B HD74BC HD74AC HD74HC HD74BC245AT

780cb

Abstract: A138-00 . 346 Hitachi 333 Introduction T his docum ent describes the hardw are specification o f the SH , Unused cso CS1 CS2 CS3 334 Hitachi Port A PAO PA1 PA2 PA3 PA4 PA5 PA6 PA7 PA8 PA9 PA10 PA11 , interface codec Unused Critical power fail Interrupt input LCD FLM interrupt input (FLM active low) PCMCIA , TXDO RXD1 TXD1 IRQ4 OutpUt IRQ6 Hitachi 335 Port C PB15 PCO Type Input ANO F u n ctio n , by 0.305 before being presented to the SH pin. PC1 PC2 AN1 AN2 Unused Lithium battery
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780cb A138-00 1351F RS232 780CB

hitachi pbx

Abstract: I6811 24 l p b 23 22 , power transistors for battery feed save mounting space on line cards. Noise suppression circuitry insure , ) connected to the subscriber line through protection resistor 40 42 T Tip side PNP darlington transistors , Feed: -2 4 V Supply voltage Internal darlington power transistor Ring trip detection Current shut-off
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A16811 hitachi pbx I6811 HA16811ANT/H HA16811ANT HA16811AMP HA16811ANT/HA16811 S/N42

2sk1058 equivalent

Abstract: MBM300BS6 JfHITACHI POWER TRANSISTORS 1 Contents Page 1. discrete and module devices New Degree of Freedom Hitachi's Power Transistors cover all field applications ranging from low to high , 24 3. Driver IC for IGBT (HTK0030) 26 4. Power Bipolar Transistors 4.1 Introduction , 30 31 32 34 35 36 37 38 39 HITACHI 2 1. Power MOSFETs 1.1 Introduction in new , these improved basic parameters. Hitachi Power MOSFETs technology has consistently advanced in the
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2sk1058 equivalent MBM300BS6 2SK1270 Hitachi MOSFET 2sk1645 2SK975 equivalent 2SC4746A 2SC4897 GN17020E 2SC4877 2SC4789 2SC3652

npn TRANSISTOR c105

Abstract: TRANSISTOR c105 31, 33, 35 U, V, W Lower arm driver push-pull output. Driven by a PWM signal. (Connect power , power PMOS or PNP transistor.) 37 to 42 U+, U­ V+, V­ W+, W­ Hall signal inputs 4 , characteristics of the output power transistors used and the output driver characteristics (see the electrical , guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation , . Function · · · · · · · · · · · · · · · Power MOS and power bipolar transistor driver
Hitachi Semiconductor
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HA13609ANT npn TRANSISTOR c105 TRANSISTOR c105 c105 TRANSISTOR ku vsat "buffer amplifier" SC-551-42 ADE-207-232 D-85622

32 channel Relay controller IC

Abstract: e35r Control For Key Telephone use, the Hitachi SLIC adapts the constant feed current method for the short distance line use. Therefore, Low power dissipation is realized by keeping the loop current Typ. value at 30mA when loop résistance Rl = 50Ã2. In addition, integration ot power transistors for battery feed , resistor 41 43 PE Tip side PNP darlington transistors' emitter potential detection input connected to VBB , Supply voltage â'¢ Internal darlington power transistor â'¢ Ring trip detection â'¢ Current shut-off
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32 channel Relay controller IC e35r Input 24V Output 5V 2W DC DC LF177 HA16816NT/MP HA16816NT HA16816MP 600S2

ha16811

Abstract: hitachi pbx function Function Basic Function Current Feed Control For PBX use, the Hitachi SLIC adapts the constant feed current method for the short distance line use. Therefore, Low power dissipation is realized by , power transistors for battery feed save mounting space on line cards. Noise suppression circuitry insure , resistor 41 43 PE Tip side PNP darlington transistors' emitter potential detection input connected the , ) and 2 W-4 W conversion â'¢ Constant Current Feed: -24 V Supply voltage â'¢ Internal darlington power
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ha16811 431 capacitor NCC 1R002 transistor npn bf 422 A16811ANT/H

igbt inverter welder schematic

Abstract: inverter welder schematic diagram the parasitic pnp transistor is formed by an additional P layer. 5 Hitachi IGBT Module , Ref.No. IGBT-01 (Rev.2) Hitachi, Ltd. Power & Industrial Systems Power Semiconductor Dept. Power & Industrial Systems Div. Hitachi IGBT Module Application Manual 1 Introduction to , the underlying reasons why Hitachi high-power IGBT modules offer reduced power losses and noise that , . No license is granted by this manual under any patents or other rights of any third party or Hitachi
Hitachi Semiconductor
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igbt inverter welder schematic inverter welder schematic diagram inverter welder schematic inverter welder schematic 1 phase using igbt inverter welder schematic 1 phase MBM300GS12A UL94VO

hitachi mosfet power amplifier audio application

Abstract: 2SK215 equivalent HITACHI 11 3 .LINE UP & APPLICATIONS · Power MOS FET Module Nowadays, high power transistors , In 1977, HITACHI was the first in the world to develop and massproduce 100 Watt Complementary Power , with high switching speed and high resistance to electrically induced failure. HITACHI Power MOS FET , Hitachi Power MOS FETs are all enhancement type Enhancement type Vg s Negative Fig. 2-3 Basic , HITACHI 3 .LINE UP & APPLICATIONS · Power MOS FET DU Series Hitachi achieved development of
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hitachi mosfet power amplifier audio application 2SK215 equivalent PM4550C 2sd667 2sb647 2SD667 equivalent k399 2SK375 2SK535 2SK382 2SK311 2SK580 RE79-24

3PHA 20

Abstract: npn TRANSISTOR c105 push-pull output. Driven by a PWM signal. (Connect power NMOS or NPN transistors.) Upper arm driver open drain output. (Connect a power PMOS or PNP transistor.) Hall signal inputs HA13609ANT Serial Port , . Function · · · · · · · · · · · · · · · Power MOS and power bipolar transistor driver circuits 16 , · · · · High breakdown voltage (50V/30mA) power transistor drive circuit PWM drive Variable speed , (MR, Hall ×3) output Ready and braking done (No/8) output (open collector output) Power supply (VSS
Hitachi
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3PHA 20 phenom 2 955 diagram 3PHA Transistor No C110 Hitachi DSA00279 HA13609A
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