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1 - 50 of about 176 for PN2907A |
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First line: PN2907A Silicon Transistor Abstract: .. PN2907A PNP Silicon Transistor Descriptions • General purpose application • Switching application Features • Low Leakage current • Low collector saturation voltage enabling low voltage .. Tags: PN2907A PN2907A |
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First line: 2N2907A Small Signal Transistor CP591X Amp/Switch Transistor Chip Abstract: .. PN2907A. GROSS DIE PER 5 INCH WAFER 45,900. PROCESS CP591X CP591X Small Signal Transistor PNP - Amp/Switch Transistor Chip. Process EPITAXIAL PLANAR. Die Size 19 x 19 MILS. Die Thickness 5.9 MILS. Base Bonding .. Tags: 2N2907A CP591X |
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First line: 2N2907A Small Signal Transistor CP591V Amp/Switch Transistor Chip Abstract: .. PN2907A. GROSS DIE PER 4 INCH WAFER 30,475. PROCESS CP591V CP591V Small Signal Transistor PNP - Amp/Switch Transistor Chip. Process EPITAXIAL PLANAR. Die Size 19 x 19 MILS. Die Thickness 7.1 MILS. Base Bonding .. Tags: 2N2907A CP591V |
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First line: UNISONIC TECHNOLOGIES CO., PN2907A GENERAL PURPOSE AMPLIFIER This PN2907A designed general purpose amplifier switch requiring collector currents Abstract: .. UNISONIC TECHNOLOGIES CO., LTD. PN2907A PNP SILICON TRANSISTOR. www.unisonic.com.tw 1 of 6. Copyright 2010 Unisonic Technologies Co., Ltd QW-R201-041 QW-R201-041 .D. PNP GENERAL PURPOSE AMPLIFIER. Ñ DESCRIPTION .. Tags: PN2907* PN2907A |
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First line: CP591V Small Signal Transistor Amp/Switch Transistor Chip Abstract: .. PRINCIPAL DEVICE TYPES 2N2905A 2N2905A 2N2907A 2N2907A CMPT2907A CMPT2907A CMST2907A CMST2907A CXT2907A CXT2907A CZT2907A CZT2907A PN2907A. Process EPITAXIAL PLANAR. Die Size 19 x 19 MILS. Die Thickness 7.1 MILS. Base Bonding Pad Area 3.5 x 4.3 MILS .. Tags: 2N2907A CP591V |
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First line: CP591V Small Signal Transistor Amp/Switch Transistor Chip Abstract: .. PRINCIPAL DEVICE TYPES 2N2905A 2N2905A 2N2907A 2N2907A CMPT2907A CMPT2907A CMST2907A CMST2907A CXT2907A CXT2907A CZT2907A CZT2907A PN2907A. Process EPITAXIAL PLANAR. Die Size 19 x 19 MILS. Die Thickness 7.1 MILS. Base Bonding Pad Area 3.5 x 4.3 MILS .. Tags: 2N2907A CP591V |
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First line: PN2907A EPITAXIAL PLANAR TRANSISTOR General Purpose Amplifier FEATURES This device designed general purpose amplifier switch requiring collector currents Abstract: .. UTC PN2907A PNP EPITAXIAL PLANAR TRANSISTOR. UTC UNISONIC TECHNOLOGIES CO. LTD 1 QW-R201-041 QW-R201-041 ,A. PNP General Purpose Amplifier. FEATURES This device is designed for use as a general purpose amplifier .. Tags: PN2907A |
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First line: Small Signal Transistor Amp/Switch Transistor Chip CP591 Abstract: .. PRINCIPAL DEVICE TYPES 2N2905A 2N2905A 2N2907A 2N2907A CMPT2907A CMPT2907A CMST2907A CMST2907A CXT2907A CXT2907A CZT2907A CZT2907A PN2907A. Process EPITAXIAL PLANAR. Die Size 19 x 19 MILS. Die Thickness 9.0 MILS. Base Bonding Pad Area 3.5 x 4.3 MILS .. Tags: 2N2907A CP591 |
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First line: 224 pn2907a PN2907A SMALL SIGNAL TRANSISTOR Abstract: .. PN2907A. SMALL SIGNAL PNP TRANSISTOR PRELIMINARY DATA. ■ SILICON EPITAXIAL PLANAR PNP. TRANSISTOR ■ TO-92 TO-92 PACKAGE SUITABLE FOR. THROUGH-HOLE PCB ASSEMBLY ■ THE NPN COMPLEMENTARY TYPE IS. PN2222A PN2222A .. Tags: ic 709 DELTA 807 224 pn2907a PN2907A |
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First line: PN2907A SMALL SIGNAL TRANSISTOR Abstract: .. PN2907A. SMALL SIGNAL PNP TRANSISTOR PRELIMINARY DATA. ■ SILICON EPITAXIAL PLANAR PNP. TRANSISTOR ■ TO-92 TO-92 PACKAGE SUITABLE FOR. THROUGH-HOLE PCB ASSEMBLY ■ THE NPN COMPLEMENTARY TYPE IS. PN2222A PN2222A .. Tags: PN2907A |
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First line: transistor PN2907 PN2907 PN2907A PHILIPS INTERNATIONAL 00M2SSM TflS SILICON PLANAR EPITAXIAL TRANSISTORS r-37-17 P-N-P silicon planar epitaxial transistors plastic TO-92 envelope general purpose applications. N-P-N complement PN2222/A. QUICK REFERENCE DATA Abstract: .. PN2907 PN2907 PN2907A _ PHILIPS INTERNATIONAL SbE Â 711D 711D Ã 2b 00M2SSM 00M2SSM TflS Â PHIN SILICON PLANAR EPITAXIAL TRANSISTORS r-37-17 r-37-17 P-N-P silicon planar epitaxial transistors in plastic TO-92 TO-92 envelope .. Tags: transistor PN2907 datasheet abstract.. |
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First line: AMER PHILIPS/DISCRETE bbSa^l m^yu/ PN2907A IAPX SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P silicon planar epitaxial transistors plastic TO-92 envelope general purpose applications. N-P-N complement PN2222/A. QUICK REFERENCE DATA Collector-emitter voltage (open base) Collector-base voltage Abstract: .. N AMER PHILIPS/DISCRETE blE D ■bbSa^l ■ÜEÖÜS4 31G I m^yu/ PN2907A IAPX SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P silicon planar epitaxial transistors in plastic TO-92 TO-92 envelope for .. Tags: datasheet abstract.. |
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First line: UNISONIC TECHNOLOGIES CO.,LTD. PN2907A GENERAL PURPOSE AMPLIFIER This PN2907A designed general purpose amplifier switch requiring collector currents Abstract: .. UNISONIC TECHNOLOGIES CO.,LTD.. PN2907A PNP EPITAXIAL SILICON TRANSISTOR. www.unisonic.com.tw 1. Copyright 2005 Unisonic Technologies Co.,LTD. QW-R201-041 QW-R201-041 .B. PNP GENERAL PURPOSE AMPLIFIER .. Tags: PN2907A |
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First line: UMT2907A SST2907A MMST2907A PN2907A Medium Power Transistor (Switching) UMT2907A/ SST2907A/ MMST2907A/ PN2907A BVceo< -60V (lc=-10mA) Complements UMT2222A SST2222A MMST2222A PN2222A. marking packaging specifications dimensions (Units: Part UMT2907A SST2907A MMST2907A PN2907A Abstract: .. Transistors UMT2907A UMT2907A / SST2907A SST2907A / MMST2907A MMST2907A / PN2907A PNP Medium Power Transistor Switching UMT2907A UMT2907A / SST2907A SST2907A / MMST2907A MMST2907A / PN2907A †Features 1 BVceo< -60V -60V lc=-10mA -10mA 2 Complements .. Tags: datasheet abstract.. |
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First line: PN2907A SMALL SIGNAL TRANSISTOR bottom view TO-92 4.32 4.83 4.32 4.78 12.50 15.62 Abstract: .. PN2907A PNP SMALL SIGNAL TRANSISTOR bottom /c B E\ view *G+ TO-92 TO-92 Dim Min Max A 4.32 4.83 B 4.32 4.78 C 12.50 15.62 D 0.36 0.56 E 3.15 3.94 G 2.29 2.79 H 1.14 1.40 All Dimensions in mm VISHAY LITEMS POWER .. Tags: datasheet abstract.. |
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First line: UMT2907A SST2907A MMST2907A PN2907A Medium Power Transistor (Switching) UMT2907A SST2907A MMST2907A PN2907A Abstract: .. UMT2907A UMT2907A / SST2907A SST2907A / MMST2907A MMST2907A / PN2907A Transistors. PNP Medium Power Transistor Switching UMT2907A UMT2907A / SST2907A SST2907A / MMST2907A MMST2907A / PN2907A. !Features 1 BVCEO< -60V -60V IC=-10mA -10mA 2 Complements the .. Tags: SST3 MMST2222A UMT2907A SST2907A |
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First line: PN2907A SMALL SIGNAL TRANSISTOR Abstract: .. PN2907A. SMALL SIGNAL PNP TRANSISTOR PRELIMINARY DATA. ■ SILICON EPITAXIAL PLANAR PNP. TRANSISTOR ■ TO-92 TO-92 PACKAGE SUITABLE FOR. THROUGH-HOLE PCB ASSEMBLY ■ THE NPN COMPLEMENTARY TYPE IS. PN2222A PN2222A .. Tags: PN2907A |
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First line: SILICON PLANAR EPITAXIAL TRANSISTORS Abstract: .. PNP SILICON PLANAR EPITAXIAL TRANSISTORS PN2907 PN2907 . PN2907A. TO-92 TO-92 Plastic Package. Complementary Silicon Transistors for Switching and Linear Applications. ABSOLUTE MAXIMUM RATINGS Ta=25 .. Tags: PN2907 equivalent PN2907 datasheet abstract.. |
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First line: UNISONIC TECHNOLOGIES CO., PN2907A GENERAL PURPOSE AMPLIFIER This PN2907A designed general purpose amplifier switch requiring collector currents Abstract: .. UNISONIC TECHNOLOGIES CO., LTD. PN2907A PNP SILICON TRANSISTOR. www.unisonic.com.tw 1 of 6. Copyright 2007 Unisonic Technologies Co., Ltd QW-R201-041 QW-R201-041 ,C . PNP GENERAL PURPOSE AMPLIFIER. DESCRIPTION .. Tags: PN2907A |
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First line: P2907A MMBT2907A P2907A MMBT2907A MMPQ2907 MT2907 PZT2907A Abstract: .. PN2907A / MMBT2907A MMBT2907A / MMPQ2907 MMPQ2907 / NMT2907 NMT2907 / PZT2907A PZT2907A . Symbol Parameter Value Units. VCEO Collector-Emitter Voltage 60 V. VCBO Collector-Base Voltage 60 V. VEBO Emitter-Base Voltage 5.0 V. IC Collector .. Tags: NMT2907 PZT2907A |
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First line: SILICON PLANAR EPITAXIAL TRANSISTORS PN2907 PN2907A TO-92 Plastic Package Abstract: .. PNP SILICON PLANAR EPITAXIAL TRANSISTORS PN2907 PN2907 . PN2907A. TO-92 TO-92 Plastic Package. Complementary Silicon Transistors for Switching and Linear Applications. ABSOLUTE MAXIMUM RATINGS Ta=25 .. Tags: PN2907 PN2907A |
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First line: SILICON PLANAR EPITAXIAL TRANSISTORS PN2907 PN2907A TO-92 Plastic Package Abstract: .. PNP SILICON PLANAR EPITAXIAL TRANSISTORS PN2907 PN2907 . PN2907A. TO-92 TO-92 Plastic Package. Complementary Silicon Transistors for Switching and Linear Applications. ABSOLUTE MAXIMUM RATINGS Ta=25 .. Tags: PN2907 equivalent PN2907 PN2907 PN2907A |
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First line: 10VDC omponents 21201 Itasca Street Chatsworth Abstract: .. PN2907A. DC Current Gain vs Collector Current. hFE. IC mA 50. 100. 150. 200. 250. 300. 0.1 1 10 100. Base-Emitter ON Voltage vs Collector Current. VBE ON - V IC - mA 0. 0.2. 0.4. 0.6. 0.8. 1.0. 1.2. 0.1 1.0 10 100. Pulsed .. Tags: 10VDC datasheet abstract.. |
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First line: PN2907A Abstract: .. PN2907A Preferred Device. General Purpose Transistor PNP Silicon. MAXIMUM RATINGS. Rating Symbol Value Unit. Collector‐Emitter Voltage VCEO ‐60 Vdc. Collector‐Base Voltage VCBO ‐60 Vdc. Emitter .. Tags: 907a PN2907A |
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First line: Medum Power Transstor (Swtchng) UMT2907A SST2907A/MMST2907A RXT2907A PN2907A dmensons (Unts (lc= Complements UMT2Z2ZA/SST2222A/MMST2222 RXT2222A/PN2222A. Abstract: .. Transistor Switching UMT2907A UMT2907A / SST2907A SST2907A /MMST2907A MMST2907A / RXT2907A RXT2907A / PN2907A •External dimensions Units : mm •Features 1 BVceo<—40V lc= —10mA 10mA 2 Complements the UMT2Z2ZA/SST2222A SST2222A /MMST2222 MMST2222 .. Tags: datasheet abstract.. |
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First line: PN2907A MMBT2907A PZT2907A PN2907A MMBT2907A Abstract: .. PN2907A *MMBT2907A MMBT2907A *PZT2907A PZT2907A . PD Total Device Dissipation. Derate above 25 C. 625 5.0. 350 2.8. 1,000 8.0. mW mW/ C. RθJC Thermal Resistance, Junction to Case 83.3 C/W. RθJA Thermal Resistance, Junction .. Tags: PZT2907A |
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First line: UMT2907A SST2907A MMST2907A PN2907A Medium Power Transistor (Switching) UMT2907A SST2907A MMST2907A PN2907A Abstract: .. UMT2907A UMT2907A / SST2907A SST2907A / MMST2907A MMST2907A / PN2907A Transistors. Rev.A 1/4. PNP Medium Power Transistor Switching UMT2907A UMT2907A / SST2907A SST2907A / MMST2907A MMST2907A / PN2907A. z Features 1 BVCEO< -60V -60V IC=-10mA -10mA 2 Complements .. Tags: UMT2907A SST2907A |
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First line: PH2907* 2N2901* 2N2901 2N297A 297A 2N297, 2N297A, PN297, PN297A SILICON PLANAR EPITAXIAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS MEDIUM SPEED SWITCHING APPLICATIONS. THEY COMPLEMENTARY TYPE 2N2222, 2N2222A, PN2222, PN2222A RESPECTIVELY. 2N297, 2N297A PACKED TO-18. PN2971 PN297A PACKED T-92A. CASE TO- Abstract: .. CRO 2N 2907 2N2907A 2N2907A 2907 PN 2907A 2907A THE 2N2907 2N2907 , 2N2907A 2N2907A , PN2907 PN2907 , PN2907A ARE PNP SILICON PLANAR EPITAXIAL TRANSISTORS FOR GENERAL PURPOSE AMPLIFIERS AND MEDIUM SPEED SWITCHING APPLICATIONS. .. Tags: 2N2901 2N2901* PH2907* datasheet abstract.. |
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First line: 2N4418 1N4008 diode Diode 1N4008 1N4008 1N4548 Diode Cross-Reference Guide Recommended Fairchild Device Abstract: .. TN3019A TN3019A TN3019A TN3019A PN2907 PN2907 PN2222 PN2222 PN2222 PN2222 PN2222 PN2222 PN2222 PN2222 PN2222 PN2222 PN2907A PN2907A PN2907A PN2907A PN2907A PN2907A PN2907A PN2907A TN2219A TN2219A TN2219A TN2219A TN2219A TN2219A TN2219A TN2219A 2N2049 2N2049 2N2086 2N2086 2N2087 2N2087 2N2102 2N2102 2N2106 2N2106 .. Tags: 1N4548 1N4008 Diode 1N4008 1N4008 diode 2N4418 you by my side U1899* u1898 cross U1898 U1897 tn6725 TN4037* TN3725 TMPTA06 TMPT5401 TMPT4403 datasheet abstract.. |
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First line: PN2907A MMBT2907A SMALL SIGNAL TRANSISTORS POWER SEMICONDUCTOR Abstract: .. POWER SEMICONDUCTOR. PN2907A / MMBT2907A MMBT2907A PNP SMALL SIGNAL TRANSISTORS. Features. • Epitaxial Planar Die Construction • Available in Both Through-Hole and Surface Mount Packages • Suitable for .. Tags: PN2907A |
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First line: book, halfpage M3D186 Abstract: .. PN2907A PNP switching transistor book, halfpage M3D186 M3D186 2004 Oct 11 2 Philips Semiconductors Product specification PNP switching transistor PN2907A FEATURES • High current max. .. Tags: datasheet abstract.. |
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First line: M3D186 Abstract: .. PN2907A PNP switching transistor dbook, halfpage M3D186 M3D186 2004 Oct 11 2 NXP Semiconductors Product data sheet PNP switching transistor PN2907A FEATURES • High current max. 600 mA .. Tags: datasheet abstract.. |
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First line: PN2907A MMBT2907A MMPQ2907 NMT2907 PZT2907A PN2907A MMBT2907A Abstract: .. PN2907A / MMBT2907A MMBT2907A / MMPQ2907 MMPQ2907 / NMT2907 NMT2907 / PZT2907A PZT2907A . Symbol Parameter Value Units. VCEO Collector-Emitter Voltage 60 V. VCBO Collector-Base Voltage 60 V. VEBO Emitter-Base Voltage 5.0 V. IC Collector .. Tags: PN2907A NMT2907 PZT2907A |
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First line: PN2907A Abstract: .. PN2907A Preferred Device. General Purpose Transistor PNP Silicon. Features. • These are Pb-Free Devices* MAXIMUM RATINGS. Rating Symbol Value Unit. Collector - Emitter Voltage VCEO -60 Vdc. Collector .. Tags: PN2907A |
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First line: PN2907A Abstract: .. PN2907A Preferred Device. General Purpose Transistor PNP Silicon. Features. • Pb−Free Packages are Available* MAXIMUM RATINGS. Rating Symbol Value Unit. Collector−Emitter Voltage VCEO −60 Vdc .. Tags: MARKING 2907A 2907A PN2907A |
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First line: SAMSUNG SEMICONDUCTOR ?cil14m2 0007311 MPS2907A EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISITOR Collector-Emitter Voltage: Vcco=60V Collector Dissipation: (max)=625mW ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Base Voltage Collector-Emitter \foltage Vceo Abstract: .. = 15mA 15mA * Pulse Test: Pulse Width <300^s, Duty Cycle <2% Also available as a PN2907A SAMSUNG SEMICONDUCTOR 581 SAMSUNG SEMICONDUCTOR INC. l'4E 0. 17964142 000731]; 8 .. 1. MPS2907A MPS2907A . PNP EPITAXiAL SILICON .. Tags: datasheet abstract.. |
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First line: 2N2222A Data Sheet 2N2222 pnp Transistor BCY58 2N2222A TO-92 2n2222 to-92 Small-signal Transistors LEADED DEVICES (continued) LOW-POWER SWITCHING TRANSISTORS TYPE NUMBER 2N2222 2N2222A 2N2369 2N2369A 2N3904 2N4401 BCY58 BCY58/VII BCY58/VIII BCY58/IX BCY58/X BCY59 BCY59/VII BCY59/VIII BCY59/IX BCY59/ Abstract: .. PN2222A PN2222A TO-92 TO-92 40 600 500 100 300 300 250 PN2907A 1074. PN2369 PN2369 TO-92 TO-92 15 200 500 40 120 500 30 ‐ 1078. PN2369A PN2369A TO-92 TO-92 15 600 500 40 120 500 30 ‐ 1078 .. Tags: 2n2222 to-92 2N2222A TO-92 2N2222 pnp 2N2222A Data Sheet transistor bcy58 IX transistor 2N2222 PN2369 EQUIVALENT PH2907A PH2369A PH2369* PH2222A* MPS3904 BSX20 bcy79 to-92 bcy79 equivalent 2N2222 2N2222A 2N2369 2N2369A 2N3904 2N4401 |
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First line: 2N2219 transistor 2N2907 PNP Transistor to 92 equivalent 2n2906 2n2222 to-92 2N2222A TO-92 Small-signal Transistors LEADED DEVICES (continued) LOW-POWER SWITCHING TRANSISTORS TYPE NUMBER 2N2905 2N2905A 2N2906 2N2906A 2N2907 2N2907A 2N3906 2N4403 BCY78 BCY78/VII BCY78/VIII BCY78/IX BCY78/X BCY79 BCY Abstract: .. PN2907A TO-92 TO-92 60 600 500 100 300 200 365 PN2222A PN2222A 1081 .. Tags: 2N2222A TO-92 2n2222 to-92 equivalent 2n2906 2N2907 PNP Transistor to 92 2N2219 transistor Transistor 2N2222A transistor 2N2222 Transistor 2N2219A PN2222A to-92 PH2222A* NPN transistor 2n2222 MPS3904 transistor bcy79 equivalent BCY59-VIII bcy59 equivalent BCY59* 2N2905 2N2905A 2N2906 2N2906A 2N2907 2N2907A 2N3906 2N4403 |
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First line: TIS93 equivalent TIS93 TIS93 Abstract: .. See PN2907A for characteristics. Absolute Maximum Ratings* TA = 25 C unless otherwise noted. *These ratings are limiting values above which the serviceability of any semiconductor device .. Tags: TIS93 equivalent TIS93 TIS93 |
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First line: PN2222A PN2222A Abstract: .. voltage operation • Complementary pair with PN2907A Ordering Information Type NO. Marking Package Code PN2222A PN2222A PN2222A PN2222A TO-92 TO-92 Outline Dimensions unit : mm 4.5 0.1 4.5 0.1 0.4 0.02 .. Tags: PN2222A PN2222A |
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First line: MPS6534 MPS6534 Abstract: .. See PN2907A for characteristics. Absolute Maximum Ratings* TA = 25 C unless otherwise noted. *These ratings are limiting values above which the serviceability of any semiconductor device .. Tags: MPS6534 |
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First line: book, halfpage M3D186 Abstract: .. PN2907A PNP switching transistor book, halfpage M3D186 M3D186 1997 May 05 2 Philips Semiconductors Product specification PNP switching transistor PN2907A FEATURES • High current max. .. Tags: datasheet abstract.. |
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First line: Medium Power Transistor (Switching) UMT2907A SST2907A/MMST2907A RXT2907A PN2907A dimensions (Units BVceo<-40V (lc=-10mA) Complements UMT2222A/SST2222A/MMST2222A/ RXT2222A/PN2222A. Abstract: .. Transistor Switching UMT2907A UMT2907A / SST2907A SST2907A /MMST2907A MMST2907A / RXT2907A RXT2907A / PN2907A •External dimensions Units : mm •Features 1 BVceo<-40V -40V lc=-10mA -10mA 2 Complements the UMT2222A UMT2222A /SST2222A SST2222A /MMST2222A MMST2222A .. Tags: datasheet abstract.. |
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First line: MMPQ6502 MMPQ6502 Abstract: .. See PN2222A PN2222A NPN & PN2907A PNP for characteristics. Absolute Maximum Ratings* TA = 25 C unless otherwise noted. *These ratings are limiting values above which the serviceability of any semiconductor .. Tags: MMPQ6502 |
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First line: MPS3702 MMBT3702 MPS3702 MMBT3702 Abstract: .. See PN2907A for characteristics. Absolute Maximum Ratings* TA = 25 C unless otherwise noted. *These ratings are limiting values above which the serviceability of any semiconductor device .. Tags: MPS3702 |
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First line: MPS3703 MPS3703 Abstract: .. See PN2907A for characteristics. Absolute Maximum Ratings* TA = 25 C unless otherwise noted. *These ratings are limiting values above which the serviceability of any semiconductor device .. Tags: MPS3703 |
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First line: PN2907A DISCETE SEMICONDUCTOS Abstract: .. PN2907A. DISCRETE SEMICONDUCTORS. R. DC COMPONENTS CO., LTD.. TECHNICAL SPECIFICATIONS OF PNP .. Tags: PN2907A |
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First line: PN2222A LITEMZI POWER SEMICONDUCTOR SMALL SIGNAL TRANSISTOR Epitaxial Planar Construction Available Both Through-Hole Surface Mount Packages Abstract: .. and Amplifier Applications †Complementary PNP Type Available PN2907A Mechanical Data_ Case: TO-92 TO-92 , Molded Plastic Leads: Solderable per MIL-STD-202 MIL-STD-202 , Method 208 Terminal Connections .. Tags: datasheet abstract.. |
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First line: Discrete POWER Signal Technologies SEMICONDUCTOR PN3645 TO-92 General Purpose Amplifier This device designed general purpose amplifiers switches requiring collector currents Sourced from Process PN2907A characteristics. Absolute Maximum Ratings* unless otherwise noted Symbol Parameter Value Units Abstract: .. See PN2907A for characteristics. Absolute Maximum Ratings* TA = 25Â C unless otherwise noted Symbol Parameter Value Units VcEO Collector-Emitter Voltage 60 V VcBO Col lector-Base Voltage .. Tags: datasheet abstract.. |
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First line: Discrete POWER Signal FAIRCH1LD Technologies SEMICONDUCTOR MPS3703 TO-92 General Purpose Amplifier This device designed general purpose amplifiers switches requiring collector currents Sourced from Process PN2907A characteristics. Absolute Maximum Ratings* unless otherwise noted Symbol Parameter Val Abstract: .. See PN2907A for characteristics. Absolute Maximum Ratings* TA = 25Â C unless otherwise noted Symbol Parameter Value Units VcEO Collector-Emitter Voltage 30 V VcBO Collector-Base Voltage .. Tags: datasheet abstract.. |
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