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Part : PMEG4010BEA/S501X Supplier : Nexperia Manufacturer : Avnet Stock : - Best Price : - Price Each : -
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PMEG4010BEA/S501X

Catalog Datasheet MFG & Type PDF Document Tags

marking code V1

Abstract: PMEG4010BEA/DG,115 ; PMEG4010BEA 1 A very low VF MEGA Schottky barrier rectifiers Product specification 2003 Sep 19 Philips , PMEG4010BEA RELATED PRODUCTS TYPE NUMBER PMEG2010AEB PMEG1020EA DESCRIPTION MARKING CODE V1 V2 V3 PMEG2010BEA; PMEG3010BEA; PMEG4010BEA QUICK REFERENCE DATA SYMBOL IF VR PARAMETER forward current reverse voltage PMEG2010BEA PMEG3010BEA PMEG4010BEA PINNING PIN 1 2 DESCRIPTION cathode anode 20 30 40 V V V MAX , 1 A very low VF MEGA Schottky barrier rectifiers PMEG2010BEA; PMEG3010BEA; PMEG4010BEA
Philips Semiconductors
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SC-76 marking code V1 PMEG4010BEA/DG,115 MHC680 PMEG3010BEA,11 PMEG4010BEA,115 M3D049 MHC682 SC-79 SCA75 R76/01/

PMEG4010BEA

Abstract: PMEG1020EA Semiconductors PMEG2010BEA PMEG3010BEA PMEG4010BEA First 1 A very low VF (MEGA) Schottky barrier rectifiers in SOD323 (SC-76) PMEG2010BEA, PMEG3010BEA, PMEG4010BEA First 1 A very low VF , mV 30 µA 150 µA 70 pF PMEG4010BEA 1.0 A 10.0 A 40 V 350 mV 640 mV 20 µA , PMEG4010BEA 15 20 25 30 VR (V) PMEG4010BEA MHC679 104 ook, halfpage More power, less , (1) 104 (1) 102 (2) (3) 103 10 PMEG4010BEA 102 1 (2) 10 10-1
Philips Semiconductors
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philips footprint sod323 010BEA SC-74

smd diode marking code v3

Abstract: DISCRETE SEMICONDUCTORS DATA SHEET PMEG2010BEA; PMEG3010BEA; PMEG4010BEA Very low VF MEGA , PMEG3010BEA PMEG4010BEA RELATED PRODUCTS TYPE NUMBER PMEG2010AEB PMEG1020EA DESCRIPTION MARKING CODE V1 V2 V3 PMEG2010BEA; PMEG3010BEA; PMEG4010BEA QUICK REFERENCE DATA SYMBOL IF VR PARAMETER forward current reverse voltage PMEG2010BEA PMEG3010BEA PMEG4010BEA PINNING PIN 1 2 DESCRIPTION cathode anode 20 30 40 V V V MAX , PMEG3010BEA PMEG4010BEA - DESCRIPTION plastic surface mounted package; 2 leads VERSION SOD323 2004 Apr 02
Philips Semiconductors
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smd diode marking code v3 SCA76 R76/03/
Abstract: DISCRETE SEMICONDUCTORS DATA SHEET PMEG2010BEA; PMEG3010BEA; PMEG4010BEA Very low VF MEGA , PMEG4010BEA RELATED PRODUCTS TYPE NUMBER PMEG2010AEB PMEG1020EA DESCRIPTION MARKING CODE V1 V2 V3 PMEG2010BEA; PMEG3010BEA; PMEG4010BEA PINNING PIN 1 2 DESCRIPTION cathode anode 1 2 MHC682 The , REFERENCE DATA SYMBOL IF VR PARAMETER forward current reverse voltage PMEG2010BEA PMEG3010BEA PMEG4010BEA 20 , PMEG3010BEA PMEG4010BEA - DESCRIPTION plastic surface mounted package; 2 leads VERSION SOD323 2004 Feb 06 Philips Semiconductors
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R76/02/

PMEG2010BEA

Abstract: PMEG2010BEV indicates the cathode. MARKING CODE PMEG2010BEA V1 PMEG3010BEA V2 PMEG4010BEA G6 , /PMEG3010BEV - 30 V PMEG4010BEA/PMEG4010BEV - 40 V IF continuous forward current , / PMEG3010BEA/ PMEG4010BEA/ PMEG2010BEV PMEG3010BEV PMEG4010BEV UNIT TYP. VF TYP. MAX. TYP. MAX , (V) 1 0.6 (3) 0 10 20 30 VR (V) 40 PMEG4010BEA/PMEG4010BEV (1) Tamb = 150 °C. (2) Tamb = 85 °C. PMEG4010BEA/PMEG4010BEV (1) Tamb = 150 °C. (2) Tamb = 85 °C. (3
NXP Semiconductors
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PMEGXX10BEA PMEGXX10BEV SMD MARKING g5 smd code marking sot23 R76/04/

SMD MARKING g5

Abstract: smd diode g5 bar indicates the cathode. MARKING CODE PMEG2010BEA V1 PMEG3010BEA V2 PMEG4010BEA , 20 V PMEG3010BEA/PMEG3010BEV - 30 V PMEG4010BEA/PMEG4010BEV - 40 V IF , PARAMETER CONDITIONS PMEG2010BEA/ PMEG3010BEA/ PMEG4010BEA/ PMEG2010BEV PMEG3010BEV PMEG4010BEV UNIT , 0.2 0.4 VF (V) 1 0.6 (3) 0 10 20 30 VR (V) 40 PMEG4010BEA/PMEG4010BEV (1) Tamb = 150 °C. PMEG4010BEA/PMEG4010BEV (1) Tamb = 150 °C. (2) Tamb = 85 °C. (3) Tamb
Philips Semiconductors
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smd diode g5 diode smd marking SOD323 5-6 transistor smd code marking 420 SYM038 smd JS 5 marking smd code marking HD SOT23
Abstract: indicates the cathode. MARKING CODE PMEG2010BEA V1 PMEG3010BEA V2 PMEG4010BEA G6 , /PMEG3010BEV â' 30 V PMEG4010BEA/PMEG4010BEV â' 40 V IF continuous forward current , PARAMETER CONDITIONS PMEG2010BEA/ PMEG3010BEA/ PMEG4010BEA/ PMEG2010BEV PMEG3010BEV PMEG4010BEV UNIT , ) 40 PMEG4010BEA/PMEG4010BEV (1) Tamb = 150 °C. (2) Tamb = 85 °C. (3) Tamb = 25 °C. PMEG4010BEA/PMEG4010BEV (1) Tamb = 150 °C. (2) Tamb = 85 °C. (3) Tamb = 25 °C. Fig.9 Fig NXP Semiconductors
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Abstract: PMEG3010EB 1 A, 30 V in SOD523 PMEG4010ET 1 A, 40 V in SOT23 PMEG4010BEA 1 A, 40 V in NXP Semiconductors
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AEC-Q101

List of rectifier diode

Abstract: PMEG4010AEH PMEG4010BEA PMEG4010EJ PMEG4010BEV PMEG4010EH PMEG4010AEH · Power management circuits ­
Philips Semiconductors
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PMEG2005EH PMEG2005AEA PMEG2005AEL PMEG3005EB PMEG4005EB PMEG2030EH List of rectifier diode MSE133 Philips stepper motor PMEG6010AED PMEG3002AEL PMEG4002EL PMEG2005AEV

DFN1411-3

Abstract: MBR140S DFN1411-3 0.5mm (height) PMEG4010BEA PMEG4010EJ SOD-323 (SOD323F) 2.5mm x 1.25mm 50.7
Diodes
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SBR1U40LP SBR05U20LPS DFN1006H4-2 MBR140S PMEG4010CEH SBR07U20LPS MBRA140 PMEG2005EL

SOD123 footprint

Abstract: SOD-110 PowerDI323 CUS03 US-FLAT PMEG4010BEA SOD-323 RB160VA-40 TUMD2 PD3S160 PowerDI323
Diodes
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SOD123 footprint SOD-110 SOD110 footprint SOD110 1.2V zener diodes 5.1V SMA Zener Diode DITM323 PD3S0230 PD3S130L PD3S130H PD3S140 PD3Z284C5V1-PD3Z284C12

TEA15xx-series

Abstract: laptop inverter ccfl PMEG2010BEA / PMEG3010BEA / PMEG4010BEA PMEG2005AEA / PMEG3005AEA / PMEG4005AEA PMEG2010AEB PMEG3002AEB , PMEG2015EA PMEG2010EA PMEG2010BEA / PMEG3010BEA / PMEG4010BEA PMEG2010AEB PMEG3002AEB PMEG1020EV
Philips Semiconductors
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AN10117-01 TEA15xx-series laptop inverter ccfl power transistor transistors equivalents low noise transistors bc638 TV power transistor datasheet MOSFET Royer oscillator 2/W97 BAS116 BAS416 SC-88 BAV99

907 TRANSISTOR smd

Abstract: catalog mosfet Transistor smd General Application Discretes PMEG4010BEA MEGA Schottky rectifier PMEG2005AEV MEGA Schottky rectifier
Philips Semiconductors
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BUK221-50DY 907 TRANSISTOR smd catalog mosfet Transistor smd diode schottky code GW smd transistor bq smd diode GW at mega 48 microcontroller 74LVC1GX04 BTA208X-1000B LPC2114/2124 P89LPC90 PCK3807A

24-36V

Abstract: EPL2014 -682) Inductor, 10µF (GRM21BR60J106KE19) CIN and 4.7µF (GRM32ER71H475KA88) COUT, (PMEG4010BEA) D1; Figure 3
austriamicrosystems AG
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TDFN-10 24-36V EPL2014 J-STD-020D MOS6020 AS1343
Abstract: (GRM21BR60J106KE19) CIN and 4.7µF (GRM32ER71H475KA88) COUT, (PMEG4010BEA) D1; Figure 3. Efficiency vs. Output austriamicrosystems AG
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Abstract: -682) Inductor, 10µF (GRM21BR60J106KE19) CIN and 4.7µF (GRM32ER71H475KA88) COUT, (PMEG4010BEA) D1; Figure 3 austriamicrosystems AG
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AS1344
Abstract: compromise efficiency. Table 7. Recommended Diodes Part Number PMEG4010BEA MBR0540 MBR0560 Reverse Voltage austriamicrosystems AG
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AS1340

MOS6020-682MLC

Abstract: EPL2014 (MOS6020-682) Inductor, 10µF (GRM21BR60J106KE19) CIN and 4.7µF (GRM32ER71H475KA88) COUT, (PMEG4010BEA) D1
austriamicrosystems AG
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MOS6020-682MLC LPS5030
Abstract: (GRM32ER71H475KA88) COUT, (PMEG4010BEA) D1; Figure 3. Efficiency vs. Output Current; VOUT = 6V 90 80 70 Figure 4 austriamicrosystems AG
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GRM21BR60J106KE19

Abstract: GRM32ER71H475KA88 (GRM32ER71H475KA88) COUT, (PMEG4010BEA) D1; Figure 3. Efficiency vs. Output Current; VOUT = 6V Figure 4
austriamicrosystems AG
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BTM marking
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