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Part : PMBFJ174,215 Supplier : NXP Semiconductors Manufacturer : RS Components Stock : 2 Best Price : £0.1240 Price Each : £0.14
Part : PMBFJ174,215 Supplier : NXP Semiconductors Manufacturer : Richardson RFPD Stock : - Best Price : $0.12 Price Each : $0.12
Part : PMBFJ174,215 Supplier : NXP Semiconductors Manufacturer : Chip1Stop Stock : 5 Best Price : $0.2480 Price Each : $0.2480
Part : PMBFJ174,215 Supplier : NXP Semiconductors Manufacturer : Farnell element14 Stock : - Best Price : £0.1180 Price Each : £0.1440
Part : PMBFJ174,215. Supplier : NXP Semiconductors Manufacturer : Farnell element14 Stock : - Best Price : £0.2440 Price Each : £0.4010
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PMBFJ174 Datasheet

Part Manufacturer Description PDF Type
PMBFJ174 NXP Semiconductors PMBFJ174 - P-channel silicon field-effect transistors - CRS: 4 pF; CRS TYP: 4 pF; IDSS: 20 to 135 mA; IDSS max.: 135 mA; IDSS min.: 20 mA; IG: 50 mA; IG: 50 ; RDS(on): 85 Ohm; toff: 15 ns; toff: 15 ns; ton: 7 ns; ton: 7 ns; -V(P)GS: 5 to 10 V; -V(P)GS MAX: 10 V; -V(P)GS MIN: 5 V; VDSmax: 30 V Original
PMBFJ174 Philips Semiconductors P-Channel Silicon Field-Effect Transistor Original
PMBFJ174 Philips Semiconductors P-Channel Silicon Field-Effect Transistor Original
PMBFJ174,215 NXP Semiconductors P-channel silicon field-effect transistors - CRS: 4 pF; CRS TYP: 4 pF; I<sub>DSS</sub>: 20 to 135 mA; I<sub>DSS</sub> max.: 135 mA; I<sub>DSS</sub> min.: 20 mA; I<sub>G</sub>: 50 mA; IG: 50 ; R<sub>DS(on)</sub>: 85 Ohm; t<sub>off</sub>: 15 ns; t<sub>off</sub>: 15 ns; t<sub>on</sub>: 7 ns; t<sub>on</sub>: 7 ns; -V(P)GS: 5 to 10 V; -V(P)GS MAX: 10 V; -V(P)GS MIN: 5 V; V<sub>DS</sub>max: 30 V; Package: SOT23 (TO-236AB); Container: Tape reel smd Original
PMBFJ174,215 NXP Semiconductors PMBFJ174 - TRANSISTOR 30 V, P-CHANNEL, Si, SMALL SIGNAL, JFET, PLASTIC, SMD, SOT-23, 3 PIN, FET General Purpose Small Signal Original
PMBFJ174 to 177 Philips Semiconductors P-channel silicon field-effect transistors Original
PMBFJ174T/R NXP Semiconductors P-channel silicon field-effect transistors - CRS: 4 pF; CRS TYP: 4 pF; I<sub>DSS</sub>: 20 to 135 mA; I<sub>DSS</sub> max.: 135 mA; I<sub>DSS</sub> min.: 20 mA; I<sub>G</sub>: 50 mA; IG: 50 ; R<sub>DS(on)</sub>: 85 Ohm; t<sub>off</sub>: 15 ns; t<sub>off</sub>: 15 ns; t<sub>on</sub>: 7 ns; t<sub>on</sub>: 7 ns; -V(P)GS: 5 to 10 V; -V(P)GS MAX: 10 V; -V(P)GS MIN: 5 V; V<sub>DS</sub>max: 30 V Original
PMBFJ174T/R N/A Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan

PMBFJ174

Catalog Datasheet MFG & Type PDF Document Tags

PMBFJ174 to 177

Abstract: pmbfj174 ï»¿â  bbS3lì31 DOSHOSb 524 N A PIER PHILIPS/DISCRETE IAPX b?E D _J PMBFJ174 to 177 P-CHANNEL , -VDS= 15 V;VGS = 0 PMBFJ174 175 176 177 -'dss > 20 < 135 7 70 2 35 1,5 20 mA mA Drain-source , Copyrighted By Its Respective Manufacturer PMBFJ174 to 177 â  bbS3T31 [][]24057 4b0 â  APX N AMER PHILIPS , otherwise specified PMBFJ174 175 176 177 Gate cut-off current -Vqs = 20 v; vQS = 0 'gss < 1 1 1 , PHILIPS/DISCRETE PMBFJ174 to 177 b7E D_ DYNAMIC CHARACTERISTICS Tj = 25 °C unless otherwise
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OCR Scan
SMD 4B0 S3T31 0D24DS 7Z94962

pmbfj174

Abstract: P6S SMD DISCRETE SEMICONDUCTORS DATA SHEET PMBFJ174 to 177 P-channel silicon field-effect , Semiconductors Product specification P-channel silicon field-effect transistors PMBFJ174 to 177 , current -VDS = 15 V; VGS = 0 300 mW PMBFJ174 175 176 -IDSS > < 20 135 7 70 , P-channel silicon field-effect transistors PMBFJ174 to 177 RATINGS Limiting values in accordance with , CHARACTERISTICS Tj = 25 °C unless otherwise specified PMBFJ174 175 176 177 Gate cut-off current
Philips Semiconductors
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P6S SMD marking p6s MAM386

PMBFJ174

Abstract: DISCRETE SEMICONDUCTORS DATA SHEET PMBFJ174 to 177 P-channel silicon field-effect , silicon field-effect transistors PMBFJ174 to 177 DESCRIPTION Silicon symmetrical p-channel , PMBFJ174 175 176 IDSS 20 135 7 70 2 35 RDS on 85 125 250 177 , Semiconductors Product specification P-channel silicon field-effect transistors PMBFJ174 to 177 , junction to ambient in free air STATIC CHARACTERISTICS Tj = 25 C unless otherwise specified PMBFJ174
NXP Semiconductors
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R77/02/8
Abstract: bb Sim i 002405b 524 H A P X N APIER P H IL IP S/ D IS CR ET E b?E I> PMBFJ174 to 177 , Total power dissipation up to Tamk - 25 °C ^to t max. 300 mW PMBFJ174 176 , interchangeable. - \ July 1993 675 bb53131 â¡D240S7 4b0 « A P X PMBFJ174 to 177 N AMER PHILIPS , Drain-source ON-resistance - V DS = 0,1 V; VGS = 0 ^DSon < 85 125 250 300 a PMBFJ174 , o f 8 mm x 10 mm x 0,7 mm. 676 July 1993 bbSBTBl 0024058 3T7 H A P X PMBFJ174 to 177 -
OCR Scan
RMBFJ174
Abstract: DISCRETE SEMICONDUCTORS DATA SHEET PMBFJ174 to 177 P-channel silicon field-effect transistors , 176 177 : p6X : p6W : p6S : p6Y 1 Top view 2 PMBFJ174 to 177 handbook, halfpage 3 d s g , Drain-source ON-resistance VDS = 0.1 V; VGS = 0 RDS on 85 125 250 300 Ptot IDSS max. PMBFJ174 20 135 7 70 , . max. max. PMBFJ174 to 177 30 30 30 50 300 65 to 150 150 V V V mA mW C C 430 K/W PMBFJ174 Gate cut-off current VGS = 20 V; VDS = 0 Drain cut-off current VDS = 15 V; VGS = 10 V Drain NXP Semiconductors
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Abstract: J175 J176 J177 2N5116 2N5460 2N5461 2N5462 PMBFJ174 PMBFJ175 PMBFJ176 PMBFJ177 - -U 30 30 30 30 30 -
OCR Scan

M74 marking

Abstract: MARKING m3p PMBFJ113 PMBFJ174 PMBFJ175 PMBFJ176 PMBFJ177 PMBFJ210 PMBFJ211 PMBFJ212 PMBFJ308 PMBFJ309 PMBFJ310 1997
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OCR Scan
BF512 BF908R BSR58 M74 marking MARKING m3p marking code NB SOT23 m33 sot23 marking Code philips m2p SOT23 BF510 BF511 BF513 BF545A BF545B

BSS83 M74

Abstract: bf992 m92 PMBFJ174 p6X BF904 M04 BF1109R NBp PMBFJ175 p6W BF904R M06 BF1109WR NB
Philips Semiconductors
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BF991 BF861A BFT46 BSS83 BSS83 M74 bf992 m92 bf998 Mop marking M29 BF909RM29 marking nb PMBF4391 BF992 PMBF4392 BF992R PMBF4393

BF991

Abstract: BF545 PMBF5486 PMBFJ108 PMBFJ109 PMBFJ110 PMBFJ111 PMBFJ112 PMBFJ113 PMBFJ174 PMBFJ175 PMBFJ17 PMBFJ177 BF1105
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OCR Scan
BF545 BF98 2N5484 2N5485 2N5486 BF245A BF245B BF245C

2N4092

Abstract: Bsv80 2N4857 2N4858 2N4859 2N4860 2N4861 2N5116 - 2N5460 2N5461 2N5462 J174 J175 J176 J177 PMBFJ174
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OCR Scan
2N4092 Bsv80 2N4392 Philips PMBF J176 BSV78 BSV79 BSV80 BSR56 BSR57 PN4391
Abstract: PMBFJ174 Transistors N-Channel JFET Military/High-RelN V(BR)DSS (V)30.0 V(BR)GSS (V)30.0 I(D) Max. (A) I(G) Max. (A)50.0m Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC)150õ I(GSS) Max. (A)1.0n @V(GS) (V) (Test Condition)20.0 V(GS)off Min. (V)5.0 I(DSS) Max. (A)135m V(GS)off Max. (V)10.0 @Vgs (test) (V) @V(DS) (V) (Test Condition)15.0 @I(D) (A) (Test Condition)10.0n I(DSS) Min. (A)20m I(DSS) Max. (A)135m @V(DS) (V) (Test Condition)15.0 r(DS)on Max. (Ohms)85.0 g(fs American Microsemiconductor
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SMD CODE MARKING s7 SOT23

Abstract: '" â'" 8 12 18 â'" â'" - P -C H A N N E L PMBFJ174 PMBFJ175 PMBFJ176 PMBFJ177 , PMBFJ110 PMBFJ111 PMBFJ112 PMBFJ113 PMBFJ174 PMBFJ175 PMBFJ176 PMBFJ177 Code M64 * * * M41
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OCR Scan
SMD CODE MARKING s7 SOT23 BF-512 BF989 BF990 BF994S BF996S BF997

bs250 bs170

Abstract: PMBFJ174 755 BSP204 486 BSV78 651 PMBFJ175 755 BSP204A 486 BSV79 651
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OCR Scan
bs250 bs170 BS170 BS208 BF904WR BS250 BC264D BF908

sot23 marking M6p

Abstract: BSR57 M5p PMBFJ112 M6p M74 PMBFJ113 P12 p13 PMBFJ174 p6X BF904WR MC
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OCR Scan
sot23 marking M6p BST120 BST122 PMBF107 BF998 PMBF170 BF998R

sot-23 Marking M6

Abstract: FET marking codes 5 5 5 3.5 3.5 3.5 A A A A A A PMBFJ174 PMBFJ175 PMBFJ176 PMBFJ177 PMBFJ111 PMBFJ112 PMBFJ113 , PMBFJ108 PMBFJ109 PMBFJ110 PMBFJ111 PMBFJ112 PMBFJ113 PMBFJ174 PMBFJ175 PMBFJ176 PMBFJ177 M64
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OCR Scan
BSP103 sot-23 Marking M6 FET marking codes MOSFET P-channel SOT-23 m6 sot-23 pinout FET SOT-223 N-Channel fet m90 BFR30 BFR31 BFR101A BFR101B BSD20 BSD22

Philips MARKING CODE

Abstract: Datasheets for BB132 varicap BF1101 NDp PMBFJ113 p13 BF556C M86 BF1101R NCp PMBFJ174 p6X BF861A M33
Philips Semiconductors
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BBY39 BB131 Philips MARKING CODE Datasheets for BB132 varicap marking code W1 BAT18 A2p Marking codes sot143 marking code A5 PMBF4416A PMBF5484 PMBF5485 BF998WR BF1100 BF545C

BF914

Abstract: BZV80 163 PMBFJ109 PMBFJ163 PMBFJ164 PMBFJ112 PMBFJ113 PMBFJ174 PMBFJ175 PMBFJ176 PMBFJ177 PMBFJ308 PMBFJ309
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OCR Scan
BB219 BF914 BZV80 BA314L BA423L BA582 BA682 BA683 BAS16

2SK163-L

Abstract: BFG135 amplifier 45 15 30 35 45 - P PMBFJ174 PMBFJ175 PMBFJ176 PMBFJ177 J174 J175 J176 J177
Philips Semiconductors
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2SK163-L BFG135 amplifier BFG480W Varicap 2SK163 3SK290 ICTEF6860HL TEF6862HL

RF8109

Abstract: 2SK43 VDS (V) max PMBFJ174 PMBFJ175 PMBFJ176 PMBFJ177 J174 J175 J176 J177 SOT23 SOT23 SOT23
Philips Semiconductors
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RF8109 2SK43 vHF amplifier module 2450Mhz BB200 varicap diode BFP180 bga2714

diode 107 10K

Abstract: BA423L PMBF4391 PMBF4392 PMBF4393 PMBFJ108 PMBFJ109 PMBFJ110 PMBFJ111 PMBFJ112 PMBFJ113 PMBFJ174 PMBFJ175 PMBFJ176
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OCR Scan
diode 107 10K BYD77 MELF diodes byd17 BYD17D BSR17 BSP 89 ST EIA-RS481A IEC286-3 MBZ5246B PMBZ5247B PMBZ5248B PMBZ5249B

nec d882

Abstract: D882 NEC P- VDS PMBFJ174 PMBFJ175 PMBFJ176 PMBFJ177 J174 J175 J176 J177 SOT23 SOT23 SOT23
Philips Semiconductors
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nec d882 D882 NEC nec d882 p j112 fet ON4831-2 2SK508 F6860HL

BB142

Abstract: 2SK163 35 35 35 6 6 6 35 35 35 - 25 50 100 20 35 50 P- PMBFJ174 PMBFJ175 PMBFJ176 , PMBFJ174 PMBFJ175 PMBFJ176 PMBFJ177 Spice
Philips Semiconductors
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BB142 BF245c SMD bap50 spice BB184LX BF1109 spice on4890 TZA30 TEF6860HL

2SK170BL

Abstract: 2SK508 ) (ns) min max max min typ max PMBFJ174 SOT23 30 50 20 135 5
Philips Semiconductors
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2SK170BL tcxo philips 4322 BFG135 power amplifier for 900Mhz 2SK147BL 2sk162 hitachi 2sk170y BF1107/8 BGA2715-17
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