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MAX3318CDBG4 Texas Instruments 2.5-V 460-Kbps RS-232 Transceiver With +/-15 KV ESD Protection 20-SSOP 0 to 70 visit Texas Instruments
MAX3318IDB Texas Instruments 2.5-V 460-Kbps RS-232 Transceiver With +/-15 KV ESD Protection 20-SSOP -40 to 85 visit Texas Instruments
MAX3318EIDB Texas Instruments 2.5-V 460-KBPS RS-232 Transceiver with IEC 61000-4-2 ESD-Protection 20-SSOP -40 to 85 visit Texas Instruments
TRS3318CDBR Texas Instruments 2.5-V 460-kbps RS-232 Transceiver With +/-15-kV ESD Protection 20-SSOP 0 to 70 visit Texas Instruments
TRS3318IPW Texas Instruments 2.5-V 460-kbps RS-232 Transceiver With +/-15-kV ESD Protection 20-TSSOP -40 to 85 visit Texas Instruments
TRS3318ECPWR Texas Instruments 2.5-V 460-Kbps RS-232 Transceiver With +/-15-kV ESD Protection 20-TSSOP 0 to 70 visit Texas Instruments Buy

PK MUR 460

Catalog Datasheet MFG & Type PDF Document Tags

U840 diode motorola

Abstract: motorola u860 diode SUFFIX (DUAL DESIGNATOR) PREFIX KEY MUR MBR MR MSR SUFFIX KEY CT = CENTER TAP (DUAL) TO , ULTRASOFT MUR ULTRAFAST EXAMPLE: MBR SCHOTTKY 30 20 WT 30 AMP 200 V CENTER TAP
ON Semiconductor
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PK MUR 460

Abstract: pk mur460 IFSM 80 A ORDERING INFORMATION Device TJ, Tstg ­65 to +150 °C MBR340 MBR340P TJ(pk) 150 °C , RESISTIVE LOAD I PK +p (CAPACITIVE LOAD) I AV I PK + 5.0 I AV 10 TJ = 150°C dc 500 400 300 C, CAPACITANCE , H = MEGAHERTZ M = POWERMITE P = POWERTAP (X10 EXCEPT SCHOTTKY) PREFIX KEY MUR MBR MR MSR , WT = CENTER TAP (DUAL) TO­247 MUR ULTRAFAST EXAMPLE: EXAMPLE: 30 30 AMP 20 200 V WT , 0.259 0.267 MILLIMETERS MIN MAX 15.78 15.97 10.01 10.21 4.60 4.80 0.67 0.86 3.08 3.27 2.54 BSC 3.13 3.27
ON Semiconductor
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PK MUR 460 pk mur460 gi756 diode PK MUR460 1110 carrier 30bq015 0525 Transient Voltage Suppressors UTR30 UTR31 UTR32 UTR3305 UTR3310 UTR3320

MUR480E

Abstract: stpr16 0.05 0.02 0.01 0.01 0.02 D = 0.5 0.1 0.05 0.01 SINGLE PULSE P(pk) t2 Duty Cycle, D = t1/t2TJ(pk) - TC = P(pk) ZJC(t) t1 ZJC(t) = r(t) RJC D curves apply for power pulse train shown read , = POWERMITE P = POWERTAP (X10 EXCEPT SCHOTTKY) PREFIX KEY MUR MBR MR MSR = = = = , TAP (DUAL) TO­247 MUR ULTRAFAST EXAMPLE: EXAMPLE: 30 30 AMP 20 200 V WT CENTER TAP , 0.259 0.267 MILLIMETERS MIN MAX 15.78 15.97 10.01 10.21 4.60 4.80 0.67 0.86 3.08 3.27 2.54 BSC 3.13 3.27
ON Semiconductor
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MBR1545CT MUR480E stpr16 340L-02 SS33 SMB A14F diode STPS2045 MURB1620CT U1620T UTR3340 UTR3350 UTR3360 UTR40

transistor U1620R

Abstract: fast recovery diode ses5001 ) 0.1 0.05 0.01 ZJC(t) = r(t) RJC t1 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT T1 TJ(pk) - TC = P(pk) ZJC(t) 50 100 200 500 1000 P(pk) t2 DUTY CYCLE, D = t1/t2 0.05 0.1 0.2 0.5 1.0 2.0 , EXCEPT SCHOTTKY) PREFIX KEY MUR MBR MR MSR = = = = ULTRA FAST RECTIFIER (SCHOTTKY) BARRIER , , D2PAK PT = CENTER TAP (DUAL) TO­218 PACKAGE WT = CENTER TAP (DUAL) TO­247 MUR ULTRAFAST EXAMPLE , 0.259 0.267 MILLIMETERS MIN MAX 15.78 15.97 10.01 10.21 4.60 4.80 0.67 0.86 3.08 3.27 2.54 BSC 3.13 3.27
ON Semiconductor
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transistor U1620R fast recovery diode ses5001 PK MUR 460 DIODE MUR1620CT equivalent transistor mbr4045pt 1N2069 MUR1620CTR MUR1620CT U1620R UTR41 UTR42 UTR4305

lm 3357

Abstract: analog devices 751n pF CT = 500 pF CT = 100 pF I PK, POWER SWITCH PEAK DRAIN CURRENT (A) Figure 1. Oscillator , Change versus Source Current 0 I pk , PEAK STARTUP CURRENT (mA) VCC = 20 V RT = 10 k CPIN 8 = 1.0 µF TA , Reference 4I RD CT 7 Oscillator Blanking Pulse PWM Comparator I + 12.3 pk R , 100 k 1.0 W D5 MUR 160 3 UVLO 14.5 V/ 9.5 V OVP 2.6 V 16 S Q PWM R LEB ILimit Thermal 9 270 µA 4, 5 , R5 MUR 39 120 D7 T1 MBR 2515L L1 5.0 µH R8 220 R9 2.80 k C7 100 nF 1 C11 220 5.05 V/4.0 A DC Output
ON Semiconductor
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lm 3357 analog devices 751n UC3842 MOTOROLA MC33362

PK MUR 460

Abstract: analog devices 751n 1 Open) Operating ICC mA ­ ­ 0.25 3.2 0.5 5.0 1.0 M f OSC , OSCILLATOR FREQUENCY (Hz) I PK, POWER , Current 0 I pk , PEAK STARTUP CURRENT (mA) VCC = 20 V RT = 10 k CPIN 8 = 1.0 µF TA = 25°C 20 Figure 10 , Oscillator Blanking Pulse PWM Comparator I + 8.8 pk T 1000 R ­ 1.077 3­366 MOTOROLA , Converter F1 1.0 A D4 92 to 276 Vac Input D2 C1 33 R6 180 k 1.0 W D5 MUR 1100E 3 UVLO 14.5 V/ 9.5 V OVP 2.6 , C2 10 R4 5.1 k R3 1.0 k C6 47 pF R7 2.2 k 1.0 W D6 R5 MUR 39 120 D7 T1 MBR 1635 L1 5.0 µH R8 220 R9
ON Semiconductor
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optocoupler 4 pin dip MOC 3861 S5502 EA SOT-23 MC33363

Transistor MTH8N45

Abstract: PK MUR 460 voltage at Pin 5, 12 where: V ­ 1.4 V (Pin 5, 12) I pk 3 R S Abnormal operating conditions occur when the , current is: 0.5 V I pk(max) R S When designing a high power switching regulator it may be desirable to , ) R2 6 RS I pk(max) [ V Clamp R S Where: 0 VClamp 0.5 V 3­460 , 1N5819 6 RS [ pk(max) + ln V Clamp R S 1 V C C R1R2 R1 R2 V Clamp [ ) 1.67 , Pin 8 6 RS 1/4W [ RS pk DS(on) Pin 6 ) RS DM(on) R I R ­ + R 6 C RS If: SENSEFET =
ON Semiconductor
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Transistor MTH8N45 MPS 0715 MTH8N45 EA2 SOT23 2N50 MC34065 MC33065

b2545 transistor

Abstract: TO220 MUR460 28 24 20 16 12 8.0 4.0 0 0 4.0 I (RESISTIVELOAD) PK + p I SQUARE WAVE AV I (CAPACITATIVELOAD) PK + 5.0 I dc AV 10 20 TJ = 125°C 8.0 12 16 20 24 28 32 36 40 , POWERTAP (X10 EXCEPT SCHOTTKY) PREFIX KEY MUR MBR MR MSR = = = = ULTRA FAST RECTIFIER , ­220, POWERTAP, DPAK, D2PAK PT = CENTER TAP (DUAL) TO­218 PACKAGE WT = CENTER TAP (DUAL) TO­247 MUR ULTRAFAST , 0.259 0.267 MILLIMETERS MIN MAX 15.78 15.97 10.01 10.21 4.60 4.80 0.67 0.86 3.08 3.27 2.54 BSC 3.13 3.27
ON Semiconductor
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b2545 transistor TO220 MUR460 BYV43-45 MUR 460 0801 MR756RL MUR420 diode MBR2535CT MBR2545CT B2535 B2545 220AB UTR4310

equivalent components of diode 1N5399

Abstract: 6A10 BL diode MARKING DIAGRAM B6045 IFSM 500 A IRRM Tstg TJ TJ(pk) dv/dt 2.0 ­65 to +175 ­65 to +150 175 10,000 , H = MEGAHERTZ M = POWERMITE P = POWERTAP (X10 EXCEPT SCHOTTKY) PREFIX KEY MUR MBR MR MSR , WT = CENTER TAP (DUAL) TO­247 MUR ULTRAFAST EXAMPLE: EXAMPLE: 30 30 AMP 20 200 V WT , 0.259 0.267 MILLIMETERS MIN MAX 15.78 15.97 10.01 10.21 4.60 4.80 0.67 0.86 3.08 3.27 2.54 BSC 3.13 3.27
ON Semiconductor
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equivalent components of diode 1N5399 6A10 BL diode diode ses5001 FE8D fe8b diode equivalent for fr302 diode MBR6045WT UTR4320 UTR4340 UTR4350 UTR4360 UTR50

MR2835S equivalent

Abstract: 1n5404 diode MARKING DIAGRAM IFSM 500 A B6045 IRRM Tstg TJ TJ(pk) dv/dt 2.0 ­65 to +175 ­65 to +150 , = POWERMITE P = POWERTAP (X10 EXCEPT SCHOTTKY) PREFIX KEY MUR MBR MR MSR = = = = , TAP (DUAL) TO­247 MUR ULTRAFAST EXAMPLE: EXAMPLE: 30 30 AMP 20 200 V WT CENTER TAP , 0.259 0.267 MILLIMETERS MIN MAX 15.78 15.97 10.01 10.21 4.60 4.80 0.67 0.86 3.08 3.27 2.54 BSC 3.13 3.27
ON Semiconductor
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MR2835S equivalent 1n5404 diode fep6dt 1N5401 equivalent MUR860 equivalent STPS2045CT MBR6045PT UTR51 UTR52 UTR60 UTR61 UTR62

NIKKO NR 9600

Abstract: Triac bt 808 600cw MS TRANSISTOR CORP.* MULLARD PHI MURATA ELECTRONICS MUR MURATA ERIE N. AMERICA I NC. ETO M/A-COM , items to MAGâ'"MAGNUM) AVANTEK Ud. EU Frimley Business Pk. Unit 6, Camberley GUI 6 5SG Tel:(01276
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OCR Scan
NIKKO NR 9600 Triac bt 808 600cw BT135 TLC223 SEMICON INDEXES NEC 10F triac

MPS 0715

Abstract: a20 tssop-8 26. Isolated MOSFET Drive VCC 16 Vin Isolation Boundary Q1 D1 ­ + RS I pk The totem­pole , + L4 0.01 MUR 440 100 L2 MPS + A20 68k 3.3k TL 43A 0.01 51k 100 1.3k RTN + 100V 1.0A 1/2 4N35 10 +
ON Semiconductor
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MC33065-H a20 tssop-8 Amp. mosfet 800 watt MC34065-H

tl4311

Abstract: SOP23-5 Philadelphia Cooper Pkwy.; East Bldg. Airport Hwy.; North Pk. Dr. Pennsauken, NJ 08109 PAâ'"(215) 925-9988 NJâ , 2.77 3.38 4.04 4.60 15 1.36 1.81 2.04 2.41 2.91 3.56 4.26 4.86 16 1.40 1.88 2.12 2.51 3.04 3.73 4.48 , '" MC676L Mur 3.63 â'" MC676P MOT 2.75j â'" MC677L MOT 1.80 â'" MC677P MOT 1.35 â'" MC678L MOT 1.80 â
ON Semiconductor
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tl4311 SOP23-5 LM337B uc3842a uc3842b MGB20N40CLT4 2N4920 SG388CH/D
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